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1. 发明申请

WO2006133249A2 INTEGRATED CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS FOR SINGLE PLATEN PROCESSING 审中-公开
标题翻译：综合化学机械抛光组合物及单板加工工艺
公开(公告)号：WO2006133249A2
公开(公告)日：2006-12-14
申请号：PCT/US2006/022037
申请日：2006-06-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , DARSILLO, Michael , WRSCHKA, Peter , WELCH, James , GILES, Jeffrey , STAWASZ, Michele , BOGGS, Karl
发明人： DARSILLO, Michael , WRSCHKA, Peter , WELCH, James , GILES, Jeffrey , STAWASZ, Michele , BOGGS, Karl
IPC分类号： B24B37/04
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L21/3212
摘要： Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.
摘要翻译：化学机械抛光（CMP）组合物和用于从其上具有其的微电子器件衬底去除铜和阻挡层材料的单CMP压板工艺。该方法包括将用于选择性地将铜选择性地除去和平面化的步骤I浆料制剂原位转化成用于在单个CMP压板垫上选择性除去阻挡层材料的步骤II浆料制剂。

2. 发明申请

WO2007019342A3 HIGH THROUGHPUT CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL FILM PLANARIZATION 审中-公开
公开(公告)号：WO2007019342A3
公开(公告)日：2007-02-15
申请号：PCT/US2006/030508
申请日：2006-08-07
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , BOGGS, Karl , DARSILLO, Michael , WRSCHKA, Peter , WELCH, James
发明人： BOGGS, Karl , DARSILLO, Michael , WRSCHKA, Peter , WELCH, James
IPC分类号： H01L21/302 , H01L21/463 , H01L21/461
摘要： A chemical mechanical polishing process including a single Step I CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

3. 发明申请

WO2005072161A2 APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：在半导体处理系统中用于检测目标气体种类的装置和方法
公开(公告)号：WO2005072161A2
公开(公告)日：2005-08-11
申请号：PCT/US2005/001409
申请日：2005-01-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CHEN, Philip, S., H. , CHEN, Ing-Shin , DIMEO, Frank, Jr. , NEUNER, Jeffrey, W. , WELCH, James , ROEDER, Jeffrey, F.
发明人： CHEN, Philip, S., H. , CHEN, Ing-Shin , DIMEO, Frank, Jr. , NEUNER, Jeffrey, W. , WELCH, James , ROEDER, Jeffrey, F.
IPC分类号： G01N9/00 , G01N27/12 , G01N33/00
CPC分类号： G01N27/16
摘要： A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF 3 , etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.
摘要翻译：用于检测目标气体物质的气体检测器和方法，所述目标气体物质例如在含有气体的气体中的含氟物质，例如用HF进行蚀刻清洁的半导体加工工具的流出物，气体检测器在一个方面采用对含氟物质敏感的含镍丝，当升高温度感测时，所述含镍丝可以用作感测组件和热源需要。气体检测器在一个方面采用可以垂直安装在支撑结构上的细长的气体传感器元件。这种细长的气体传感器元件在支撑结构上的垂直安装显着提高了信号强度，减少了响应时间，使气体检测器的占用面积最小，并且提供了适应这种气体传感器元件的热膨胀/收缩的结构灵活性。 >

4. 发明申请

WO2005081931A2 NICKEL-COATED FREE-STANDING SILICON CARBIDE STRUCTURE FOR SENSING FLUORO OR HALOGEN SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS, AND PROCESSES OF MAKING AND USING SAME 审中-公开
标题翻译：用于在半导体加工系统中感测氟或者卤素物质的镍涂层的自由置换的硅碳结构，以及制造和使用它们的方法
公开(公告)号：WO2005081931A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/005607
申请日：2005-02-23
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , DIMEO, Frank, Jr. , CHEN, Philip, S.H. , CHEN, Ing-Shin , NEUNER, Jeffrey, W. , WELCH, James
发明人： DIMEO, Frank, Jr. , CHEN, Philip, S.H. , CHEN, Ing-Shin , NEUNER, Jeffrey, W. , WELCH, James
IPC分类号： G01N33/00
CPC分类号： G01N27/16 , G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981
摘要： A (MEMS)-based gas sensor assembly for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds that are subsequently removable for forming structure layers.
摘要翻译：一种基于（MEMS）的气体传感器组件，其用于检测含有其的气体中的含氟物质，例如经历HF，NF 3等蚀刻清洁的半导体加工工具的流出物。优选实施例中的这种气体传感器组件包括独立式碳化硅支撑结构，其具有涂覆在其上的气体感测材料层，优选镍或镍合金层。这种气体传感器组件优选地通过使用牺牲模具的微型模制技术来制造，所述牺牲模具随后可拆卸以形成结构层。

5. 发明申请

WO2006101897A3 METHOD AND APPARATUS FOR MONITORING PLASMA CONDITIONS IN AN ETCHING PLASMA PROCESSING FACILITY 审中-公开
公开(公告)号：WO2006101897A3
公开(公告)日：2006-09-28
申请号：PCT/US2006/009330
申请日：2006-03-15
申请人： ADVANCED TECHNOLOGY MATERIALS, INC , CHEN, Ing-Shin , NEUNER, Jeffrey, W. , DIMEO, Frank, Jr. , CHEN, Philip, S.H. , WELCH, James , ROEDER, Jeffrey, F.
发明人： CHEN, Ing-Shin , NEUNER, Jeffrey, W. , DIMEO, Frank, Jr. , CHEN, Philip, S.H. , WELCH, James , ROEDER, Jeffrey, F.
IPC分类号： H01L21/302
摘要： The present invention relates to a method and system of using downstream sensor elements (214) for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility (202) that utilizes halogen-containing plasma and/or oxygen- containing plasma. Such sensor elements (214) are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma (204), and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility (202).

6. 发明申请

WO2004036175A2 APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：在半导体处理系统中感测荧光物种的装置和方法
公开(公告)号：WO2004036175A2
公开(公告)日：2004-04-29
申请号：PCT/US2003/032521
申请日：2003-10-15
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： DIMEO, Frank , CHEN, Philip, S.H. , NEUNER, Jeffrey, W. , WELCH, James , STAWASZ, Michele , BAUM, Thomas, H. , KING, Mackenzie, E. , CHEN, Ing-Shin , ROEDER, Jeffrey, F.
IPC分类号： G01N
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： ABSTRACT OF THE DISCLOSUREA gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
摘要翻译：本发明的摘要气体检测器和用于检测含有气体的气体中的含氟物质的方法，例如，用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电基于系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

7. 发明公开

EP1714135A2 APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：在半导体处理系统中用于检测目标气体种类的装置和方法
公开(公告)号：EP1714135A2
公开(公告)日：2006-10-25
申请号：EP05711523.0
申请日：2005-01-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： CHEN, Philip, S., H. , CHEN, Ing-Shin , DIMEO, Frank, Jr. , NEUNER, Jeffrey, W. , WELCH, James , ROEDER, Jeffrey, F.
IPC分类号： G01N9/00
CPC分类号： G01N27/16
摘要： A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.
摘要翻译：一种气体检测器和用于检测目标气体种类的气体检测器和方法，所述目标气体种类例如含有气体的气体含有气体，例如用HF，NF3等进行蚀刻清洗的半导体加工工具的流出物。气体检测器在一个方面采用对含氟物质敏感的含镍灯丝，当需要高温感应时，该含氟灯丝既可用作传感元件又可用作热源。气体检测器在一个方面采用可以垂直安装在支撑结构上的细长的气体传感器元件。这种细长的气体传感器元件在支撑结构上的垂直安装显着提高了信号强度，减少了响应时间，使气体检测器的占用面积最小，并且提供了适应这种气体传感器元件的热膨胀/收缩的结构灵活性。

8. 发明公开

EP1899111A2 INTEGRATED CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS FOR SINGLE PLATEN PROCESSING 审中-公开
标题翻译：成分为单板上集成处理化学机械抛光和方法
公开(公告)号：EP1899111A2
公开(公告)日：2008-03-19
申请号：EP06772376.7
申请日：2006-06-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： DARSILLO, Michael , WRSCHKA, Peter , WELCH, James , GILES, Jeffrey , STAWASZ, Michele , BOGGS, Karl
IPC分类号： B24B37/04
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L21/3212
摘要： Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.

9. 发明公开

EP1721143A2 NICKEL-COATED FREE-STANDING SILICON CARBIDE STRUCTURE FOR SENSING FLUORO OR HALOGEN SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS, AND PROCESSES OF MAKING AND USING SAME 审中-公开
标题翻译：镀镍被拆卸SILIZIUMCARBIDSTRUKTUR于所有生产和使用出来携带或卤素物质在氟HALBLEITERPROZESSIERUNGSSYSTEMEN及其方法
公开(公告)号：EP1721143A2
公开(公告)日：2006-11-15
申请号：EP05723491.6
申请日：2005-02-23
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： DIMEO, Frank, Jr. , CHEN, Philip, S.H. , CHEN, Ing-Shin , NEUNER, Jeffrey, W. , WELCH, James
IPC分类号： G01N9/00
CPC分类号： G01N27/16 , G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981
摘要： A (MEMS)-based gas sensor assembly (35) for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide (4) support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds (16) that are subsequently removable for forming structure layers.
摘要翻译： A（MEMS）的气体传感器组件用于在气体含相同，例如，在经受蚀刻用HF清洗，NF _{3 半导体处理工具的排出物等搜索检测的含氟物种气体传感器组件的优选实施例包括具有气体感测材料，优选镍或镍合金，在其上涂覆的层的自立式碳化硅支撑结构。搜索气体传感器组件优选地通过微模制技术用人牺牲模具随后被做可拆卸用于形成结构层制造。}

10. 发明公开

EP1554561A2 APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：设备和工艺半导体加工系统中检测FLUOROSPEZIES
公开(公告)号：EP1554561A2
公开(公告)日：2005-07-20
申请号：EP03809006.4
申请日：2003-10-15
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： DIMEO, Frank , CHEN, Philip, S.H. , NEUNER, Jeffrey, W. , WELCH, James , STAWASZ, Michele , BAUM, Thomas, H. , KING, Mackenzie, E. , CHEN, Ing-Shin , ROEDER, Jeffrey, F.
IPC分类号： G01N9/00
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

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