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    • 2. 发明公开
    • Container trailer
    • Anhängerzum Transport von Containern
    • EP2610106A1
    • 2013-07-03
    • EP13161192.3
    • 2009-12-02
    • Welch, James W.
    • Welch, James W.
    • B60P1/64B65D88/12
    • B60P1/6445
    • A trailer includes a coupling (125) to attach the trailer to a tractor (105), and a frame (120) attached to the coupling. The frame is positionable as a single unit about a container (115) such that the frame can be attached to the container in four regions of the container to lift the container. The trailer has road wheels for long-haul transportation over road systems. The trailer frame can be positioned about the container either by laterally expanding and retracting, by pivoting about a horizontal axis, or by pivoting about a vertical axis.
    • 拖车包括将拖车附接到拖拉机(105)的联接器(125)和附接到联接器的框架(120)。 框架可围绕容器115定位为单个单元,使得框架可以在容器的四个区域中附接到容器以提升容器。 拖车具有用于在道路系统上长途运输的车轮。 拖车框架可以通过横向膨胀和缩回,围绕水平轴线枢转,或通过围绕垂直轴线枢转来定位在容器周围。
    • 7. 发明公开
    • MOS system and methods of use
    • MOS系统和Verwendungsverfahren
    • EP0902476A1
    • 1999-03-17
    • EP97306688.9
    • 1997-08-29
    • Welch, James Douglas
    • Welch, James Douglas
    • H01L27/092
    • H01L27/095H01L21/823814H01L27/0629H01L27/0727H01L27/092H01L29/7839Y10S257/902
    • The use of single doping type and/or intrinsic silicon in realization of Schottky barrier junction based single device inverting and single device non-inverting systems which demonstrate operational characteristics similar to multiple device (CMOS) systems, is disclosed. Variations of said single device inverting and single device non-inverting systems can be operated as modulators, nonlatching (SCR's) and/or gate voltage controlled direction of rectification devices. Source Coupled Regeneratively Switching Schottky barrier CMOS device systems comprising seriesed N-Channel and P-Channel MOSFETS, are also disclosed. Self-delineating device fabrication procedures for realizing Schottky barrier MOSFETS with leakage current limiting Schottky barrier junctions only at the ends of semiconductor channel regions, are further disclosed. Presented are experimentally obtained results which demonstrate operational characteristics of P and N-Channel Schottky barrier MOSFET devices fabricated by a disclosed fabrication procedure in which chromium was used as a Schottky barrier silicide forming metal. The present invention promises to increase packing density in CMOS circuitry by at least one-third and offers increased speed of operation inherrant with Schottky barrier junctions.
    • 公开了使用单掺杂型和/或本征硅实现基于肖特基势垒结的单器件反相和单器件非反相系统,其展示了类似于多器件(CMOS)系统的操作特性。 所述单器件反相和单器件非反相系统的变化可以作为调整器,非锁定(SCR)和/或整流装置的栅极电压控制方向来操作。 还公开了包括串联N沟道和P沟道MOSFET的源极耦合再生肖特基势垒CMOS器件系统。 进一步公开了仅在半导体沟道区的端部实现具有漏电流限制肖特基势垒结的肖特基势垒MOSFET的自描绘器件制造程序。 提出的实验获得的结果表明通过公开的制造方法制造的P和N沟道肖特基势垒MOSFET器件的操作特性,其中使用铬作为肖特基势垒硅化物形成金属。 本发明有希望将CMOS电路中的封装密度提高至少三分之一,并且提供了用肖特基势垒结继承的增加的操作速度。