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    • 9. 发明公开
    • 열전성능이 우수한 코어/쉘 구조를 갖는 열전 나노와이어, 및 이를 포함하는 열전 나노소자 제조방법
    • 具有核壳结构的高性能热电纳米管及其制造包含其的热电纳米器件的方法
    • KR1020140098353A
    • 2014-08-08
    • KR1020130010827
    • 2013-01-31
    • 연세대학교 산학협력단
    • 이우영김정민이승현
    • H01L35/02H01L35/34
    • H01L35/32H01L35/16H01L35/18H01L35/34
    • Provided are a thermoelectric nanowire having a core-shell structure with high thermoelectric performance, and a method of fabricating a thermoelectric nanodevice having the same. One aspect of the present invention provides a method of fabricating a thermoelectric nanodevice having a thermoelectric nanowire with a core-shell structure comprising the following steps. A thermoelectric nanowire, having a core-shell structure with a controlled diameter within a range of about 380-550nm and a thermoelectric performance index (ZT) greater than or equal to about 0.5, is stacked on a substrate. A copolymer layer is formed on the substrate to include the nanowire therein, and an electron beam resistor is formed on the copolymer layer. An electron beam lithography process is performed to etch a portion of the copolymer layer and an electron beam resist layer, such that at least a portion of a nanowire core is etched. After a surface oxide layer of an exposed nanowire is etched to be removed by using a plasma etching in a chamber, an ohmic contact is vaporized in-situ on the nanowire with the oxide layer removed. Then, the copolymer layer and an electron beam resistor layer are removed from the nanowire to form an electrode.
    • 提供具有高热电性能的核 - 壳结构的热电纳米线以及具有该热电纳米线的热电纳米线的制造方法。 本发明的一个方面提供一种制造具有核 - 壳结构的热电纳米线的热电纳米器件的方法,包括以下步骤。 将具有约380-550nm范围内受控直径的核 - 壳结构和大于或等于约0.5的热电性能指数(ZT)的热电纳米线堆叠在基板上。 在基板上形成共聚物层以包含其中的纳米线,并且在共聚物层上形成电子束电阻。 执行电子束光刻工艺以蚀刻共聚物层和电子束抗蚀剂层的一部分,使得至少一部分纳米线芯被蚀刻。 在暴露的纳米线的表面氧化物层通过在室中使用等离子体蚀刻被蚀刻去除之后,在去除了氧化物层的纳米线上原位蒸发欧姆接触。 然后,从纳米线除去共聚物层和电子束电阻层,形成电极。
    • 10. 发明公开
    • 열전성능이 우수한 Bi 열전 나노와이어 및 이를 포함하는 열전 나노소자 제조방법
    • 用于制造包含其的热电纳米器件的高性能热电双相纳米材料和方法
    • KR1020140097808A
    • 2014-08-07
    • KR1020130010346
    • 2013-01-30
    • 연세대학교 산학협력단
    • 이우영이승현김정민
    • H01L35/02H01L35/14H01L35/34
    • H01L35/14H01L35/16H01L35/18H01L35/34
    • Provided are a single crystal thermoelectric nanowire with superb thermoelectric performance and a method for manufacturing a thermoelectric nanodevice having the same. The present invention provides a method for manufacturing a thermoelectric nanodevice comprising the following steps. A single crystal thermoelectric nanowire with an adjusted diameter smaller than or equal to 40 nm and a thermoelectric figure of merit greater than or equal to 0.5 is stacked on a substrate. A copolymer layer is formed on the substrate to include the nanowire, and an electron beam resist is formed thereon. An electron beam lithography process is performed such that portions of the copolymer layer and an electron beam resist layer are etched to expose at least a portion of the nanowire. After a surface oxide layer of the exposed nanowire is removed by using a plasma etching method in the chamber, an ohmic contact is deposited in-situ on the nanowire with the oxide layer removed, and the copolymer layer and the electron beam resist layer are removed from the nanowire. Then, an electrode is formed.
    • 提供具有极好的热电性能的单晶热电纳米线和具有该热电纳米线的热电纳米线的制造方法。 本发明提供一种制造热电纳米装置的方法,包括以下步骤。 将具有小于或等于40nm的调节直径和热变电阻值大于或等于0.5的单晶热电纳米线堆叠在基板上。 在基板上形成包含纳米线的共聚物层,在其上形成电子束抗蚀剂。 进行电子束光刻工艺,使得共聚物层和电子束抗蚀剂层的部分被蚀刻以暴露至少一部分纳米线。 在室中通过使用等离子体蚀刻方法去除暴露的纳米线的表面氧化物层之后,在除去氧化物层的纳米线上原位沉积欧姆接触,并且去除共聚物层和电子束抗蚀剂层 从纳米线。 然后,形成电极。