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    • 10. 发明授权
    • 구리 단일막 또는 구리 몰리브덴막의 식각용액 및 그식각방법
    • 美国职业棒球协会
    • KR100459271B1
    • 2004-12-03
    • KR1020020023091
    • 2002-04-26
    • 동우 화인켐 주식회사엘지디스플레이 주식회사
    • 채기성조규철권오남이경묵황용섭김기섭김성수오금철
    • C23F1/18
    • PURPOSE: Etching solutions for Cu monolayer or Cu-molybdenum multilayers comprising deionized water and two types of additives comprising hydrogen peroxide water, organic acid, phosphate and nitrogen, and an etching method are provided. CONSTITUTION: The etching solutions comprises first additive comprising 8 to 20 wt.% of hydrogen peroxide water for the total weight of composition, 1 to 5 wt.% of organic acid for the total weight of composition, 0.2 to 5 wt.% of phosphate for the total weight of composition and 0.2 to 5 wt.% of nitrogen for the total weight of composition; second additive comprising 0.2 to 5 wt.% of nitrogen for the total weight of composition; and a balance of deionized water for the total weight of composition. The etching method comprises first step of depositing copper/molybdenum layer on a substrate; second step of selectively leaving photoresist on the copper/molybdenum layer; and third step of etching the copper/molybdenum layer using the etching solution, wherein the copper/molybdenum layer is a double film in which copper film(14) is formed on molybdenum layer(12), wherein thickness of the copper layer is thicker than that of the molybdenum layer, wherein the substrate is a glass substrate(10) for TFT LCD (thin film transistor liquid crystal display), and wherein the copper layer is a source/drain wiring.
    • 目的:提供包含去离子水和包含过氧化氢水,有机酸,磷酸盐和氮的两种添加剂的铜单层或铜钼多层膜的蚀刻溶液以及蚀刻方法。 组成:蚀刻溶液包含第一添加剂,其包含组合物总重量的8至20重量%的过氧化氢水,组合物总重量的1至5重量%的有机酸,0.2至5重量%的磷酸盐 对于组合物的总重量和组合物总重量为0.2-5重量%的氮; 第二添加剂,其包含组合物总重量的0.2至5重量%的氮; 余量的去离子水用于组合物的总重量。 该蚀刻方法包括在基底上沉积铜/钼层的第一步骤; 第二步,在铜/钼层上选择性地留下光刻胶; 以及使用所述蚀刻溶液蚀刻所述铜/钼层的第三步骤,其中所述铜/钼层是在钼层(12)上形成铜膜(14)的双层膜,其中所述铜层的厚度比 其中基板是用于TFT LCD(薄膜晶体管液晶显示器)的玻璃基板(10),并且其中铜层是源极/漏极布线。