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    • 3. 发明公开
    • 태양전지 및 이의 제조방법
    • 太阳能电池及其制造方法
    • KR1020120075100A
    • 2012-07-06
    • KR1020100137135
    • 2010-12-28
    • 엘지디스플레이 주식회사
    • 김영준김정열이정우임광영김동주이정원
    • H01L31/075H01L31/04H01L31/18
    • Y02E10/50Y02P70/521H01L31/075H01L31/04H01L31/18
    • PURPOSE: A solar battery and a manufacturing method thereof are provided to maximize efficiency of the solar battery by reducing the influence of a grain boundary obstructing the movement of an electric charge. CONSTITUTION: A first transparent electrode(120) is patterned on a transparent substrate(110). A p-type semiconductor layer(130) is formed on the first transparent electrode which includes the first transparent electrode. An intrinsic semiconductor layer(140) is formed on the p-type semiconductor layer. An n-type semiconductor layer(150) is formed on the intrinsic semiconductor layer. A catalyst metal layer(160) is formed on the n-type semiconductor layer. A second transparent electrode(170) is formed on the catalyst metal layer.
    • 目的:提供太阳能电池及其制造方法,以通过减少阻碍电荷移动的晶界的影响来最大化太阳能电池的效率。 构成:将第一透明电极(120)图案化在透明衬底(110)上。 在包括第一透明电极的第一透明电极上形成p型半导体层(130)。 本征半导体层(140)形成在p型半导体层上。 在本征半导体层上形成n型半导体层(150)。 催化剂金属层(160)形成在n型半导体层上。 在催化剂金属层上形成第二透明电极(170)。
    • 10. 发明公开
    • 태양전지 및 그 제조방법
    • 太阳能电池及其制造方法
    • KR1020120035680A
    • 2012-04-16
    • KR1020100097355
    • 2010-10-06
    • 엘지디스플레이 주식회사
    • 김영준김정열이정우임광영김동주이정원
    • H01L31/075H01L31/04
    • Y02E10/50H01L31/075H01L31/04
    • PURPOSE: A solar battery and a manufacturing method thereof are provided to improve offsetting efficiency of accumulated electrons and holes by forming a defect supply layer for providing a defect level between first and second photoelectric transformation layers. CONSTITUTION: A defect supply layer(140) is arranged on the upper part of a first photoelectric transformation layer. The defect supply layer has a defect level. A second photoelectric transformation layer(150) is comprised of a second P-type semiconductor layer, a second pure semiconductor layer, and a second N-type semiconductor layer. The second P-type semiconductor layer, the second pure semiconductor layer, and the second N-type semiconductor layer are successively formed on the upper part of the defect supply layer. A second electrode(160) is formed on the upper part the second photoelectric transformation layer.
    • 目的:提供太阳能电池及其制造方法,通过形成用于在第一和第二光电转换层之间提供缺陷水平的缺陷供应层来提高积聚的电子和空穴的抵消效率。 构成:在第一光电转换层的上部配置缺陷供给层(140)。 缺陷供应层具有缺陷水平。 第二光电转换层(150)由第二P型半导体层,第二纯半导体层和第二N型半导体层构成。 第二P型半导体层,第二纯半导体层和第二N型半导体层依次形成在缺陷供给层的上部。 第二电极(160)形成在第二光电转换层的上部。