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1. 发明授权

KR101907446B1 3차원 반도체 기억 소자 및 그 제조 방법 有权
公开(公告)号：KR101907446B1
公开(公告)日：2018-10-12
申请号：KR1020110039683
申请日：2011-04-27
申请人： 삼성전자주식회사
发明人： 임진수 , 우라자에브블라디미르 , 정진하 , 김한수 , 이혜연
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/0688 , H01L27/11582 , H01L29/7926
摘要： 3차원반도체기억소자및 그제조방법을제공한다. 이소자에따르면, 수직형활성패턴이전극구조체의일 측벽에정의된수직형그루브내에배치될수 있다. 정보저장막이수직형활성패턴의측벽과, 전극구조체내 각전극패턴사이에개재된다.

2. 发明公开

KR1020120025133A 수직형 반도체 소자의 제조 방법 有权
标题翻译：制造垂直型半导体器件的方法
公开(公告)号：KR1020120025133A
公开(公告)日：2012-03-15
申请号：KR1020100087327
申请日：2010-09-07
申请人： 삼성전자주식회사
发明人： 유병관 , 설광수 , 박영우 , 임진수
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L21/28282 , H01L21/02104 , H01L27/11582 , H01L29/7926 , H01L21/823487
摘要： PURPOSE: A method for manufacturing a vertical semiconductor device is provided to improve the property of a semiconductor pattern by reducing the number of films laminated on a hole inner wall having a high aspect ratio. CONSTITUTION: A first poly silicon film pattern(116a), a blocking dielectric layer pattern, a charge trapping layer pattern(112b), and a tunnel insulating film pattern(114b) are formed on a side wall of an aperture part. A second polysilicon layer is deposited on a first polysilicon layer pattern while touching with a bottom surface of the aperture part. A semiconductor pattern(117) including the first polysilicon film pattern and the second polysilicon layer is formed. Sacrificial layer patterns are removed to generate grooves between inter-layer dielectric film patterns. Control gate electrodes(124a-124f) are respectively formed inside the grooves.
摘要翻译：目的：提供一种用于制造垂直半导体器件的方法，通过减少层叠在具有高纵横比的孔内壁上的膜的数量来改善半导体图案的性能。构成：在开口部的侧壁上形成有第一多晶硅膜图案（116a），阻挡介电层图案，电荷俘获层图案（112b）和隧道绝缘膜图案（114b）。第二多晶硅层沉积在第一多晶硅层图案上，同时与孔部分的底表面接触。形成包括第一多晶硅膜图案和第二多晶硅层的半导体图案（117）。消除牺牲层图案以在层间电介质膜图案之间产生凹槽。控制栅电极（124a-124f）分别形成在凹槽内。

3. 发明授权

KR100851404B1 이동통신 단말기의 스팸 차단 방법 有权
标题翻译：用于在移动通信终端中阻塞垃圾的方法
公开(公告)号：KR100851404B1
公开(公告)日：2008-08-08
申请号：KR1020070015449
申请日：2007-02-14
申请人： 삼성전자주식회사
发明人： 정혜순 , 임진수
IPC分类号： H04B1/40
CPC分类号： H04W4/16 , H04L51/12 , H04M3/436
摘要： A method for intercepting spam messages in a mobile terminal is provided to register and manage spam keywords synthetically by using an integrated spam list. If the user of a mobile terminal makes a spam setup request through a key input part(S11,S12), the spam keyword registration part of a control part displays a spam setup screen(S13). If the user selects a desired item, such as an address item, a title item, etc., on the displayed spam setup screen(S14), the spam keyword registration part displays a spam keyword registration screen for the selected item(S15). If the user inputs a desired spam keyword in an input column(S16), the spam keyword registration part analyzes the inputted spam keyword and confirms a call type corresponding to the spam keyword(S17). Then the spam keyword registration part modifies and displays a call type selection portion in the spam keyword registration screen so that the user can select the associated call type according to the inputted spam keyword(S18). Afterwards, if the user makes a storage request(S19), the spam keyword registration part stores the settings in an integrated spam list(S20).
摘要翻译：提供了一种用于拦截移动终端中的垃圾邮件的方法，通过使用综合垃圾邮件列表来综合地注册和管理垃圾邮件关键字。如果移动终端的用户通过密钥输入部分进行垃圾邮件建立请求（S11，S12），则控制部分的垃圾邮件关键字登记部分显示垃圾邮件设置屏幕（S13）。如果用户在显示的垃圾邮件设置屏幕上选择所需的项目（例如地址项目，标题项目等）（S14），则垃圾邮件关键字登记部分显示所选项目的垃圾邮件关键字登记画面（S15）。如果用户在输入列中输入了期望的垃圾邮件关键字（S16），则垃圾邮件关键字注册部分分析输入的垃圾邮件关键字并确认与垃圾邮件关键字对应的呼叫类型（S17）。然后，垃圾邮件关键字注册部分在垃圾邮件关键字注册屏幕中修改并显示呼叫类型选择部分，使得用户可以根据输入的垃圾邮件关键字选择相关联的呼叫类型（S18）。之后，如果用户进行存储请求（S19），则垃圾邮件关键字登记部将该设定存储在综合垃圾邮件列表中（S20）。

4. 发明授权

KR100729738B1 금속 화합물 및 이를 포함하는 유기 전계 발광 소자 有权
标题翻译： 금속화합물및이를포함하는유기전계발광소자
公开(公告)号：KR100729738B1
公开(公告)日：2007-06-20
申请号：KR1020060001777
申请日：2006-01-06
申请人： 한양대학교 산학협력단 , 삼성전자주식회사
发明人： 서동학 , 임진수 , 김지호 , 최순현
IPC分类号： C09K11/06
摘要： Provided are a metal compound which is improved in lifetime, luminous efficiency and color purity and is reduced in concentration quenching, and an organic electroluminescent device containing the metal compound. The metal compound is represented by the formula(1) or (6), wherein M is any one selected from Ir, Pt, Rh, Re and Os; m is 2 or 3; n is 0 or 1; m+n is 3; m+n is 2 if M is Pt; X, Y and Z are identical or different one another and are N or P; R2, R3, R4, R30, R31 and R32 are identical or different one another and are H, a C1-C20 alkyl group, an aryl group, a cycloalkyl group, a halogen atom, a linear or branched substituent containing at least one halogen atom, a linear or branched substituent containing at least one hetero atom, a carbonyl group, a vinyl group or an acetylenyl group; and R1 and R29 are H, a C1-C7 alkyl group, a cycloalkyl group, a halogen group, a linear or branched substituent containing at least one halogen atom, or a linear or branched substituent containing at least one hetero atom.
摘要翻译：本发明提供寿命提高，发光效率和色纯度提高，且浓度急剧降低的金属化合物以及含有该金属化合物的有机电致发光元件。金属化合物由式（1）或（6）表示，其中M是选自Ir，Pt，Rh，Re和Os中的任何一种; m是2或3; n是0或1; m + n是3; 如果M是Pt，则m + n是2; X，Y和Z彼此相同或不同，并且是N或P; R 2，R 3，R 4，R 30，R 31和R 32彼此相同或不同且为H，C 1 -C 20烷基，芳基，环烷基，卤素原子，含有至少一个卤素原子，含有至少一个杂原子的直链或支链取代基，羰基，乙烯基或乙炔基; 并且R 1和R 29为H，C 1 -C 7烷基，环烷基，卤素基团，含有至少一个卤素原子的直链或支链取代基或含有至少一个杂原子的直链或支链取代基。

5. 发明授权

KR101652829B1 수직 구조의 비휘발성 메모리 소자 有权
标题翻译：垂直结构非易失性存储器件
公开(公告)号：KR101652829B1
公开(公告)日：2016-09-01
申请号：KR1020100052366
申请日：2010-06-03
申请人： 삼성전자주식회사
发明人： 최병인 , 장성일 , 강창석 , 임진수
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L29/66666 , G11C16/0466 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7827 , H01L29/7889 , H01L29/7926
摘要： 수직채널구조의비휘발성메모리소자가제공된다. 본발명의일 실시예에따른비휘발성메모리소자는, 기판상에수직인방향으로연장되는채널층; 및채널층의측벽을따라서기판상으로수직하게배열되는복수의트랜지스터들을포함하는메모리셀 스트링;을포함하고, 메모리셀 스트링은복수의트랜지스터들을구성하며제1 층간절연막에의해분리되는게이트들을포함하며, 메모리셀 스트링의복수의트랜지스터들중 적어도하나는게이트와채널층의사이에형성된돌출부를포함하는것을특징으로한다.

6. 发明公开

KR1020110029403A 3차원 반도체 메모리 장치 및 그 제조 방법 有权
标题翻译：三维半导体存储器件及其制造方法
公开(公告)号：KR1020110029403A
公开(公告)日：2011-03-23
申请号：KR1020090087063
申请日：2009-09-15
申请人： 삼성전자주식회사
发明人： 심선일 , 장재훈 , 김한수 , 황성민 , 조원석 , 임진수
IPC分类号： H01L27/10 , H01L21/82
CPC分类号： H01L29/7926 , H01L27/11556 , H01L27/11582
摘要： PURPOSE: A three dimensional semiconductor memory device and a manufacturing method thereof are provided to restrain the non-uniformity in the electrical characteristic between the memory cells by forming the lower and upper semiconductor patterns using the same material without discontinuous boundary. CONSTITUTION: A lower part thin film structure(100) is formed on a substrate(10). The lower part thin film structure comprises a plurality of bottom insulating layers(121~127) and a plurality of lower part sacrificing layers(131~136). A lower penetration hole(140) passes through the lower part thin film structure. A bottom semiconductor pattern(150) fills the lower penetration holes.
摘要翻译：目的：提供三维半导体存储器件及其制造方法，以通过使用相同材料形成下部和上部半导体图案来不间断地限制存储单元之间的电气特性的不均匀性。构成：在基板（10）上形成下部薄膜结构（100）。下部薄膜结构包括多个底部绝缘层（121〜127）和多个下部牺牲层（131〜136）。下穿孔（140）穿过下部薄膜结构。底部半导体图案（150）填充下部穿透孔。

7. 发明授权

KR100729739B1 금속 화합물 및 이를 포함하는 유기 전계 발광 소자 有权
标题翻译： 금속화합물및이를포함하는유기전계발광소자
公开(公告)号：KR100729739B1
公开(公告)日：2007-06-20
申请号：KR1020060001801
申请日：2006-01-06
申请人： 한양대학교 산학협력단 , 삼성전자주식회사
发明人： 서동학 , 최진식 , 임진수 , 김송호 , 김대범
IPC分类号： C09K11/06
摘要： Provided are a metal compound which is improved in lifetime, is reduced in concentration quenching and enhances the luminous efficiency and color purity of an organic electroluminescent device, and an organic electroluminescent device containing the metal compound. The metal compound is represented by the formula(1), wherein M is any one selected from Ir, Pt, Rh, Re and Os; m is 2 but m is 1 if M is Pt; A is a group represented by the formula(2); R1 to R12 are identical or different one another and are H, a C1-C20 alkyl group, an aryl group, a cycloalkyl group, a halogen group, a linear or branched substituent containing at least one halogen atom, a linear or branched substituent containing at least one hetero atom; and L1 is a group represented by the formula(3).
摘要翻译：本发明提供一种寿命得到改善，降低了浓度猝灭并提高有机电致发光元件的发光效率和色纯度的金属化合物以及含有该金属化合物的有机电致发光元件。金属化合物由式（1）表示，其中M是选自Ir，Pt，Rh，Re和Os中的任何一种; m是2，但如果M是Pt，则m是1; A是由式（2）表示的基团; R1至R12彼此相同或不同，并且为H，C1-C20烷基，芳基，环烷基，卤素基团，含有至少一个卤素原子的直链或支链取代基，含有至少一个杂原子; L1是由式（3）表示的基团。

8. 发明授权

KR100729737B1 금속 화합물 및 이를 포함하는 유기 전계 발광 소자 有权
标题翻译： 금속화합물및이를포함하는유기전계발광소자
公开(公告)号：KR100729737B1
公开(公告)日：2007-06-20
申请号：KR1020060001727
申请日：2006-01-06
申请人： 한양대학교 산학협력단 , 삼성전자주식회사
发明人： 서동학 , 최진식 , 임진수 , 김송호 , 김치훈
IPC分类号： C09K11/06
摘要： Provided are a metal compound, and an organic electroluminescent device containing the metal compound which is improved in luminous efficiency and color purity. The metal compound is represented by the formula(1), wherein M is any one selected from Ir, Pt, Rh, Re and Os; m is 2 or 3; n is 0 or 1; m+n is 3; m+n is 2 if M is Pt; X is N or P; Y is O, S or Se; A is a group represented by the formula(2); R1 to R3 and R5 to R14 are identical or different one another and are H, a C1-C20 alkyl group, an aryl group, a cycloalkyl group, a halogen atom, a linear or branched substituent containing at least one halogen atom, a linear or branched substituent containing at least one hetero atom, a carbonyl group, a vinyl group or an acetylenyl group; R4 is H, a C1-C20 alkyl group, a cycloalkyl group, a halogen atom, a linear or branched substituent containing at least one halogen atom, or a linear or branched substituent containing at least one hetero atom; and L2 is represented by the formula(3), (4) or (5).
摘要翻译：本发明提供一种金属化合物及含有该金属化合物的发光效率及色纯度提高的有机电致发光元件。金属化合物由式（1）表示，其中M是选自Ir，Pt，Rh，Re和Os中的任何一种; m是2或3; n是0或1; m + n是3; 如果M是Pt，则m + n是2; X是N或P; Y是O，S或Se; A是由式（2）表示的基团; R1至R3和R5至R14彼此相同或不同且为H，C1-C20烷基，芳基，环烷基，卤素原子，含有至少一个卤素原子的直链或支链取代基，直链或含有至少一个杂原子，羰基，乙烯基或乙炔基的分支取代基; R4为H，C1-C20烷基，环烷基，卤素原子，含有至少一个卤素原子的直链或支链取代基或含有至少一个杂原子的直链或支链取代基; L2由式（3），（4）或（5）表示。

9. 发明授权

KR102078597B1 반도체 장치 有权
公开(公告)号：KR102078597B1
公开(公告)日：2020-04-08
申请号：KR1020130074592
申请日：2013-06-27
申请人： 삼성전자주식회사
发明人： 김태경 , 설광수 , 백현철 , 임진수 , 조성순
IPC分类号： H01L27/115 , H01L21/8247

10. 发明授权

KR101990904B1 수직형 반도체 소자 有权
公开(公告)号：KR101990904B1
公开(公告)日：2019-06-19
申请号：KR1020120077939
申请日：2012-07-17
申请人： 삼성전자주식회사
发明人： 이재구 , 임진수
IPC分类号： H01L27/115 , H01L21/8247

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