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    • 1. 发明专利
    • Light source unit, optical axis adjusting method for light source unit, proximity exposure device, exposure light irradiating method for proximity exposure device, and manufacturing method of display panel substrate
    • 光源单元,用于光源单元的光轴调整方法,接近曝光装置,接近曝光装置的曝光光照射方法以及显示面板基板的制造方法
    • JP2011247924A
    • 2011-12-08
    • JP2010117993
    • 2010-05-24
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • TEZUKA HIDEKAZUHAYASHI TOMOAKIYOSHIDA MINORU
    • G03F7/20G02F1/1335G02F1/1368H01L21/027
    • PROBLEM TO BE SOLVED: To easily and accurately adjust optical axes of each semiconductor light-emitting element and each magnifying lens.SOLUTION: An optical axis adjusting device 60 including a laser light source 67 and a light-shielding plate 63 having a pin hole 63a is used to carry out the adjustment as follows. Laser light generated from the laser light source 67 of the optical axis adjusting device 60 is irradiated onto the light-shielding plate 63 of the optical axis adjusting device 60 through each magnifying lens 43, and each of the magnifying lenses 43 is positioned with respect to the light-shielding plate 63 so that the laser light passes through the pin hole 63a of the light-shielding plates 63. Thereafter, light generated from each semiconductor light-emitting element 42 is irradiated onto the light-shielding plates 63 of the optical axis adjusting device 60 through each of the magnifying lenses 43, and each of the semiconductor light-emitting elements 42 is positioned with respect to each of the magnifying lenses 43 so that the light passes through the pin hole 63a of the light-shielding plates 63 has the maximum intensity. In addition, each of the semiconductor light-emitting elements 42 and each of the magnifying lenses 43 are arranged together in a state of being positioned with respect to each other.
    • 要解决的问题:为了容易且精确地调整每个半导体发光元件和每个放大透镜的光轴。 解决方案:使用包括激光光源67和具有针孔63a的遮光板63的光轴调节装置60进行如下调整。 从光轴调整装置60的激光光源67产生的激光通过各放大透镜43照射到光轴调节装置60的遮光板63上,并且每个放大透镜43相对于 遮光板63,使得激光穿过遮光板63的针孔63a。之后,从每个半导体发光元件42产生的光照射到光轴的遮光板63上 通过每个放大透镜43调节装置60,并且每个半导体发光元件42相对于每个放大透镜43定位,使得光穿过遮光板63的销孔63a具有 最大强度。 此外,每个半导体发光元件42和每个放大透镜43在相对于彼此定位的状态下一起布置。 版权所有(C)2012,JPO&INPIT
    • 3. 发明专利
    • 膜厚測定装置および膜厚測定方法
    • 薄膜厚度测量装置和薄膜厚度测量方法
    • JP2014196942A
    • 2014-10-16
    • JP2013072335
    • 2013-03-29
    • 株式会社日立ハイテクノロジーズHitachi High-Technologies Corp
    • ISHII HARUYUKISASAZAWA HIDEAKITEZUKA HIDEKAZUYOSHITAKE YASUHIRONAKAO TOSHIYUKI
    • G01B11/06
    • 【課題】広い範囲の膜厚を高速に測定することが可能な膜厚測定装置および膜厚測定方法を提供する。【解決手段】膜厚測定装置においては、測定される膜内の複数の領域のそれぞれに、ポンプ光71とプローブ光72が照射される。複数の領域のそれぞれは、ポンプ光71の照射により振動する。それぞれ振動している複数の領域に、プローブ光72を照射することにより、複数の領域のそれぞれにおいて、膜厚に応じた反射光が発生する。複数の領域のそれぞれにおける反射光が、フォトカウンタ35により検出され、検出結果に基づいて、複数の領域のそれぞれにおける膜厚が求められる。【選択図】図1
    • 要解决的问题:提供能够高速测量宽范围的膜厚度的膜厚测量装置和膜厚测量方法。本发明的膜厚测量装置将泵浦光71和探针光72施加到 要测量的胶片中的多个区域。 通过施加泵浦光71使多个区域中的每一个振动。探针光72被施加到分别振动的多个区域,使得在多个区域中的每个区域处产生根据膜厚度的反射光。 通过光计数器35检测多个区域中的每一个处的反射光,并且基于检测结果来检测多个区域中的每一个处的膜厚度。
    • 5. 发明专利
    • Exposure method and device thereof
    • 曝光方法及其装置
    • JP2012145869A
    • 2012-08-02
    • JP2011005744
    • 2011-01-14
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • ISHIDA SUSUMUTEZUKA HIDEKAZUDOI HIDEAKISAITO YOSHIHIRONEMOTO RYOJI
    • G03F7/20H01L21/027
    • PROBLEM TO BE SOLVED: To provide a light source for exposure which is compact and inexpensive and is capable of reducing the number of LED elements in an LED light source to obtain a sufficient light quantity in a short time.SOLUTION: An exposure device is configured to have exposure light source means for emitting exposure light, table means which is movable in a plane while placing an exposure substrate and control means for controlling the table means and the exposure light source means. The exposure light source means has a light source part in which a plurality of light emitting elements are two-dimensionally arranged. When an exposure substrate placed on the table means by the exposure light source means is exposed with a predetermined total exposure light quantity within a predetermined period of time, the control means is configured such that the light source part is controlled and a plurality of pulsed lights are emitted from the light source part to irradiate the exposure substrate while sequentially changing the irradiation conditions.
    • 要解决的问题:提供一种紧凑且便宜的曝光用光源,能够减少LED光源中的LED元件的数量,以在短时间内获得足够的光量。 解决方案:曝光装置被配置为具有用于发射曝光的曝光光源装置,在放置曝光基板的同时在平面中可移动的台装置和用于控制台装置和曝光光源装置的控制装置。 曝光光源装置具有二维排列多个发光元件的光源部。 当通过曝光光源装置放置在桌子上的曝光衬底被暴露在预定时间段内的预定总曝光量时,控制装置被配置为使光源部分被控制,并且多个脉冲光 从光源部发射,同时照射曝光基板,同时依次改变照射条件。 版权所有(C)2012,JPO&INPIT
    • 6. 发明专利
    • Deposition device and deposition method
    • 沉积装置和沉积方法
    • JP2014066619A
    • 2014-04-17
    • JP2012212362
    • 2012-09-26
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • TEZUKA HIDEKAZUSASAZAWA HIDEAKIISHII HARUYUKIYOSHITAKE YASUHIRO
    • G01B11/06C23C14/54
    • PROBLEM TO BE SOLVED: To measure a film thickness directly and accurately in a deposition process in a deposition device for forming a film on a surface of a film substrate using a roll-to-roll method.SOLUTION: The deposition device includes an unwinding section 2, a deposition section 3, a film thickness measurement section 4, and a winding section 5. The unwinding section 2 includes an unwinding roll 11, and a film substrate 8 is unwound from the unwinding roll 11. The deposition section 3 forms a film on a surface of the film substrate 8 unwound from the unwinding roll 11. The film thickness measurement section 4 radiates pump light and probe light to the film formed on the surface of the film substrate 8, measures the intensity of the reflected light produced by reflection of the radiated probe light, and measures the film thickness of the film on the basis of the measured intensity. The winding section 5 includes a winding roll 14, and winds, on the winding roll 14, the film substrate 8 whose film thickness is measured by the film thickness measurement section 4.
    • 要解决的问题:使用卷对卷方法在用于在膜基材的表面上形成膜的沉积装置中的沉积工艺中直接且准确地测量膜厚。解决方案:沉积装置包括退绕部分 2,沉积部分3,膜厚测量部分4和卷绕部分5.展开部分2包括退卷辊11,并且薄膜基片8从展开辊11展开。沉积部分3形成薄膜 在从退卷辊11展开的薄膜基板8的表面上。膜厚测量部分4将泵浦光和探测光照射到在薄膜基板8的表面上形成的薄膜上,测量由反射产生的反射光的强度 的辐射探针光,并且基于测量的强度来测量膜的膜厚度。 卷绕部5包括卷绕辊14,在卷绕辊14上卷绕膜厚度由膜厚测定部4测定的膜基板8。
    • 7. 发明专利
    • Proximity exposure apparatus, method for forming exposure light of proximity exposure apparatus, and method for manufacturing display panel substrate
    • 临近曝光装置,形成接近曝光装置的方法以及制造显示板基板的方法
    • JP2013171088A
    • 2013-09-02
    • JP2012033309
    • 2012-02-17
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • TEZUKA HIDEKAZUKOTAKE HIDEOSONOBE KAZUYUKIKITAMURA JUNICHI
    • G03F7/20G02F1/13G02F1/1335G02F1/1368H01L21/027
    • PROBLEM TO BE SOLVED: To form high luminance exposure light by achieving easy installation of semiconductor light-emitting elements and efficiently utilizing light of the semiconductor light-emitting element.SOLUTION: A proximity exposure apparatus has a base substrate 41 and a fly-eye lens 45. The base substrate 41 and the fly-eye lens 45 are arranged so that a distance from a center of a semiconductor light-emitting element group mounted on the base substrate 41 to a center of a concave mirror 50 and a distance from the center of the concave mirror 50 to a center of an incidence plane of the fly-eye lens 45 are equal to a focal distance of the concave mirror 50, and so that a center location of the semiconductor light-emitting element group mounted on the base substrate 41 and a center location of the incidence plane of the fly-eye lens 45 are symmetrical about a normal line passing through a focal point of the concave mirror 50. A plurality of semiconductor light-emitting elements 42 and a plurality of magnifying lenses 43 are arranged so that an optical axis of light that is generated by each semiconductor light-emitting element 42, magnified by the corresponding magnifying lens 43 and reflected on the concave mirror 50 is made incident to the fly-eye lens 45 at an angle equal to or less than a predetermined value that does not deviate from the irradiation surface of the fly-eye lens 45.
    • 要解决的问题:通过实现半导体发光元件的易于安装并有效利用半导体发光元件的光来形成高亮度曝光光。解决方案:接近曝光装置具有基底41和蝇眼透镜 基底基板41和蝇眼透镜45配置成从安装在基底基板41上的半导体发光元件组的中心到凹面镜50的中心与中心距离的距离 凹透镜50的相对于防反射镜50的入射面的中心的距离与凹面镜50的焦距相等,并且使得安装在基底基板上的半导体发光元件组的中心位置 41和飞眼透镜45的入射平面的中心位置关于通过凹面镜50的焦点的法线对称。多个半导体发光元件4 2和多个放大透镜43被布置成使得由相应的放大透镜43放大并在凹面镜50上反射的由每个半导体发光元件42产生的光的光轴入射到飞行 - 眼睛透镜45的角度等于或小于不偏离飞眼镜片45的照射表面的预定值。
    • 8. 发明专利
    • Exposure apparatus, exposure method, and manufacturing method of display panel substrate
    • 曝光装置,曝光方法和显示板基板的制造方法
    • JP2011237596A
    • 2011-11-24
    • JP2010108843
    • 2010-05-10
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • SAITO YOSHIHIROTEZUKA HIDEKAZUDOI HIDEAKIMOCHIZUKI MASAAKIKOTAKE HIDEOYAMAMOTO KENJI
    • G03F7/20H01L21/027
    • PROBLEM TO BE SOLVED: To provide an exposure apparatus and an exposure method that suppress the change of exposure light intensity and uniformly perform pattern exposure while extending the lives of semiconductor light-emitting elements and also reducing power consumption when a substrate is exposed by exposure light generated from multiple semiconductor light-emitting elements.SOLUTION: When the exposure of a substrate is not performed, a light source controller 50 turns off each of semiconductor light-emitting elements 82 without supplying driving current to the multiple semiconductor light-emitting elements 82 of a light source 80. When the exposure of the substrate is performed, the light source controller 50 turns on each of the semiconductor light-emitting elements 82 with supplying driving current to the multiple semiconductor light-emitting elements 82 of the light source 80. The light source controller 50 detects change in the amount of light due to the temperature change of the multiple semiconductor light-emitting elements 82 of the light source 80, and increases or decreases the driving current supplied to the multiple semiconductor light-emitting elements 82 of the light source 80 so as to compensate the change in the detected amount of light.
    • 要解决的问题:提供一种曝光装置和曝光方法,其抑制曝光光强度的变化并均匀地进行图案曝光,同时延长半导体发光元件的寿命并且还降低基板暴露时的功耗 通过从多个半导体发光元件产生的曝光光。 解决方案:当不执行基板的曝光时,光源控制器50关闭每个半导体发光元件82,而不向光源80的多个半导体发光元件82提供驱动电流。当 执行基板的曝光,光源控制器50通过向光源80的多个半导体发光元件82提供驱动电流来接通每个半导体发光元件82.光源控制器50检测变化 由于光源80的多个半导体发光元件82的温度变化导致的光量增加或减少供给到光源80的多个半导体发光元件82的驱动电流,从而 补偿检测到的光量的变化。 版权所有(C)2012,JPO&INPIT
    • 10. 发明专利
    • Light source device, and backlight, exposure device and exposure method using the same
    • 光源装置和背光,曝光装置和使用该曝光装置的曝光方法
    • JP2011128290A
    • 2011-06-30
    • JP2009285237
    • 2009-12-16
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • ISHIDA SUSUMUTEROUCHI TOSHIROTEZUKA HIDEKAZU
    • G03F7/20H01L21/027H01L33/58
    • H01L2224/48091H01L2924/00014
    • PROBLEM TO BE SOLVED: To achieve at lower cost a light source device in which the optical axis of a light emitting element above a substrate and the optical axis of an optical component are accurately aligned.
      SOLUTION: The light source device is configured as follows: a substrate 4 has a first electrode pad 411 and a second electrode pad 412; a light emitting element 2 has a package having a light exit surface 21 and a third electrode pad 26 and a light emitting element chip housed within the package; an optical component has a lens part 31, a pedestal part 32 and a joint surface 33 formed under the pedestal part 32; the lens part 31 covers the light exit surface 21 of the light emitting element 2; the first electrode pad 411 formed on the substrate 4 and the third electrode pad 26 formed under the light emitting element 2 are joined with solder 10; and the second electrode pad 412 formed on the substrate 4 and the joint surface 33 formed under the pedestal part 32 of the optical component are joined with solder 10.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题为了以更低的成本实现光源装置,其中基板上的发光元件的光轴和光学部件的光轴准确对准。 光源装置的结构如下:基板4具有第一电极焊盘411和第二电极焊盘412; 发光元件2具有封装,该封装具有容纳在封装内的光出射面21和第三电极焊盘26以及发光元件芯片; 光学部件具有形成在基座部32下方的透镜部31,基座部32和接合面33, 透镜部31覆盖发光元件2的光出射面21; 形成在基板4上的第一电极焊盘411和形成在发光元件2下方的第三电极焊盘26与焊料10接合; 并且形成在基板4上的第二电极焊盘412和形成在光学部件的基座部32下方的接合面33与焊料10接合。版权所有(C)2011,JPO&INPIT