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1. 发明专利

JP2010185866A Photoconductive layer manufacturing method 审中-公开
标题翻译：光电层制造方法
公开(公告)号：JP2010185866A
公开(公告)日：2010-08-26
申请号：JP2009238853
申请日：2009-10-16
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI
IPC分类号： G01T1/24 , C01B33/12 , C01G29/00 , G21K4/00
CPC分类号： G03G5/04 , G03G5/0578 , G03G5/0592 , G03G5/087
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoconductive layer which is resistant to physical impacts. SOLUTION: A method for manufacturing the photoconductive layer formed of Bi 12 MO 20 particles (M is at least one among Si, Ge, and Ti) and constitutes a radiation imaging panel for recording radiation image information as an electrostatic latent image, and the method includes the steps of molding a powder compact 2' of Bi 12 MO 20 particles, impregnating the powder compact 2' with a macromolecular substance 5, and making the macromolecular substance solidify. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造耐物理冲击的光电导层的方法。＆lt; P＆gt;解决方案：一种用于制造由Bi（S）SiO 2 / SiO 2颗粒形成的光电导层的方法（M是Si，Ge和Ti中的至少一种），并构成用于记录作为静电潜像的放射线图像信息的放射线图像面板，并且该方法包括以下步骤：将Bi 12 20 颗粒的粉末压块2' 粉末压块2'与大分子物质5，使大分子物质固化。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009291684A Method of forming functional film pattern 审中-公开
标题翻译：形成功能膜图案的方法
公开(公告)号：JP2009291684A
公开(公告)日：2009-12-17
申请号：JP2008145710
申请日：2008-06-03
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI , TANAKA ATSUSHI , UMEDA KENICHI , KODA KATSUHIRO , SUNAKAWA HIROSHI
IPC分类号： B05D1/26 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To mitigate the resistance of a functional film pattern to be formed and achieve the formation of the functional film pattern in a single scanning process, in a method of forming the functional film pattern by an inkjet head.
SOLUTION: The longitudinal direction of the functional film pattern part 4 made up of straight lines is inclined at a specified angle θ to the scan direction of an inkjet head 110, the angle satisfying the formula: d
摘要翻译：要解决的问题：为了减轻要形成的功能膜图案的电阻，并且在通过喷墨头形成功能膜图案的方法中，在单次扫描过程中实现功能膜图案的形成。解决方案：由直线构成的功能膜图形部分4的纵向方向以与喷墨头110的扫描方向成规定的角度θ倾斜，该角度满足公式：d <2rSINθ（其中“ d“是相邻液滴中心之间距离的扫描方向的垂直分量距离，”r“是液滴冲击后的半径，但是θ≠0）。从设置有规定间隔的多个排出孔111排出含有功能微粒B的液滴L的喷墨头110在基板1上扫描。此外，功能膜图案P形成在功能膜图案部4上直线的上升由冲击基板1的液滴L形成。（C）2010，JPO＆INPIT

3. 发明专利

JP2009290112A Conductive inorganic film, method for manufacturing thereof, wiring board, and semiconductor device 审中-公开
标题翻译：导电无机膜，其制造方法，接线板和半导体器件
公开(公告)号：JP2009290112A
公开(公告)日：2009-12-10
申请号：JP2008143254
申请日：2008-05-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI , TANAKA ATSUSHI
IPC分类号： H01L21/288 , H01B5/14 , H01B13/00 , H01L21/3205 , H01L21/336 , H01L29/786 , H05K1/09 , H05K3/00
CPC分类号： H01L29/7869 , C23C18/08 , C23C18/1216 , C23C18/1233 , C23C18/127 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01L21/4867 , H01L23/4985 , H01L2924/0002 , H01L2924/12044 , H05K1/0393 , H05K1/092 , H05K3/105 , H05K3/1241 , H05K3/1283 , H05K2201/0224 , H05K2203/107 , H05K2203/1131 , H05K2203/1163 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To stably manufacture a low-resistance conductive inorganic film on a substrate by a liquid phase method using a dispersion liquid of inorganic particles in a low-temperature process.
SOLUTION: The conductive inorganic film 1 is manufactured by sequentially executing: a process (A) of forming a thin-film precursor 12 containing a plurality of inorganic particles 20 on a substrate 11 by the liquid phase method by using a material liquid containing the plurality of inorganic particles 20 with each surface coated with a dispersant 30 bonded by cuttable chemical bonding by an oxidation treatment, and an organic solvent; and a process (B) of forming the conductive inorganic film 1 by executing an oxidation treatment to the thin-film precursor 12 in a condition at a temperature over 100°C, below the thermal decomposition start temperature of an organic constituent having the highest thermal decomposition start temperature within organic constituents included in the thin-film precursor 12, and below the upper temperature limit of the substrate 11 to cut the chemical bonding on the surfaces of the inorganic particles 20 included in the thin-film precursor 12 to desorb the dispersant 30 from the surfaces, and decomposing the organic constituents included in the thin-film precursor 12.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过在低温工艺中使用无机颗粒的分散液的液相法在基板上稳定地制造低电阻导电性无机膜。解决方案：导电无机膜1通过依次执行：通过液相法在基板11上形成含有多个无机颗粒20的薄膜前体12的方法（A），通过使用材料液含有多个无机粒子20，每个表面涂覆有通过氧化处理可切割化学键合的分散剂30和有机溶剂; 以及通过在温度超过100℃，低于具有最高热的有机成分的热分解开始温度的条件下对薄膜前体12进行氧化处理来形成导电无机膜1的方法（B）包含在薄膜前体12中的有机成分内的分解开始温度，并且低于基板11的上限温度，以切割薄膜前体12中包含的无机颗粒20的表面上的化学键合以解吸分散剂 30，并分解包含在薄膜前体12中的有机成分。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009252962A Semiconductor device, manufacturing method of semiconductor device and display device 有权
标题翻译：半导体器件，半导体器件和显示器件的制造方法
公开(公告)号：JP2009252962A
公开(公告)日：2009-10-29
申请号：JP2008098346
申请日：2008-04-04
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1292 , H01L29/7869 , H01L51/0004 , H01L51/0558
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variations in characteristics of a drain current value which are caused by low dimension precision in manufacturing by a printing technology, and to provide a manufacturing method of the semiconductor device and a display device. SOLUTION: The semiconductor device includes a substrate and a channel region which is formed on the substrate by a printing process wherein a relationship L≥2a is satisfied where L is a channel length of the channel region and (a) is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel length L; and a relationship W≥2b is satisfied where W is a channel width of the channel region and (b) is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制由印刷技术制造的低尺寸精度引起的漏极电流值的特性变化的半导体器件，并且提供半导体器件的制造方法和显示设备。解决方案：半导体器件包括衬底和通过印刷工艺在衬底上形成的沟道区，其中满足L≥2a的关系，其中L是沟道区的沟道长度，（a）是最小的在图案尺寸和图案间尺寸之间的尺寸在与定义通道长度L的图案相同的层中; 并且满足W≥2b的关系，其中W是沟道区的沟道宽度，（b）是与定义沟道宽度W的图案在同一层中的图案尺寸和图案间尺寸中的最小尺寸。
版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2014017490A Inorganic film manufacturing method 审中-公开
标题翻译：无机薄膜制造方法
公开(公告)号：JP2014017490A
公开(公告)日：2014-01-30
申请号：JP2013149144
申请日：2013-07-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NOMOTO MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： H01L21/368 , C01G23/00 , C01G39/00 , C01G41/00 , H01L21/336 , H01L29/26 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a good-quality inorganic film having specific resistance appropriate for transistor drive.SOLUTION: An inorganic film represented by a general formula NMQO(where N represents Zn or Mg, M represents Ti, W or Mo, Q represents In or Fe, and a, b, c, d are positive real numbers) is deposited by coating of a raw material liquid containing at least one of oxide, alkoxide and organic metallic compound of N, at least one of oxide, alkoxide and organic metallic compound of M, oxide, alkoxide and organic metallic compound of Q and an organic solvent, and a semiconductor film 4 is formed by a heat treatment. A heat source of the heat treatment is an excimer laser which is a pulse laser having a pulse width of 100 ns and under.
摘要翻译：要解决的问题：提供具有适合于晶体管驱动的电阻率的优质无机膜。溶液：由通式NMQO表示的无机膜（其中N表示Zn或Mg，M表示Ti，W或Mo，Q表示 In或Fe，以及a，b，c，d为正实数）通过涂覆含有氧化物，醇盐和有机金属化合物N，至少一种氧化物，醇盐和有机物的原料液体而沉积 M，氧化物，醇盐和有机金属化合物的金属化合物和有机溶剂，并且通过热处理形成半导体膜4。热处理的热源是作为脉冲宽度为100ns以下的脉冲激光的准分子激光器。

6. 发明专利

JP2013069663A Transparent conductive film, method for manufacturing the same, flexible organic electronic device, and organic thin film solar cell 有权
标题翻译：透明导电膜，其制造方法，柔性有机电子器件和有机薄膜太阳能电池
公开(公告)号：JP2013069663A
公开(公告)日：2013-04-18
申请号：JP2012069123
申请日：2012-03-26
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI , MAEHARA YOSHINORI , TSUKAHARA JIRO , TOMARU YUICHI
IPC分类号： H01M14/00 , H01B5/14 , H01B13/00 , H01L51/42 , H01L51/50 , H05B33/02 , H05B33/26 , H05B33/28
CPC分类号： H05K1/0274 , G06F2203/04103 , H01L31/022466 , H01L31/022491 , H01L31/1884 , H01L51/445 , Y02E10/549 , Y02P70/521 , Y10T29/49155
摘要： PROBLEM TO BE SOLVED: To obtain a transparent conductive film for organic electronic devices, capable of being roll-formed on an inexpensive film substrate and exhibiting both high transparency and high conductivity.SOLUTION: The transparent conductive film is constituted from: a conductive stripe 14 which is subjected to mask vapor deposition on a plastic support 12 and formed by arranging a plurality of conductive lines 14a at an interval of 3 mm or more and 20 mm or less, the conductive lines having a film thickness of 50 nm or more and 500 nm or less and a line width of 0.3 mm or more and 1 mm or less in plan view, and comprising metal or an alloy; and a transparent conductive material layer 18 which is provided so as to cover the plastic support 12 and the conductive stripe 14, and has a specific resistance of 4×10Ω cm or less and a film thickness of 20 nm or more and 500 nm or less.
摘要翻译：要解决的问题：为了获得能够在便宜的膜基材上卷成型并且具有高透明性和高导电性的有机电子器件用透明导电膜。透明导电膜由以下部分构成：在塑料支撑体12上进行掩模气相沉积而形成的导电条14，其形成为以3mm以上且20mm的间隔配置多根导电线14a 以下，导电线的平面图中的膜厚为50nm以上且500nm以下，线宽为0.3mm以上且1mm以下，并且包含金属或合金; 以及透明导电材料层18，其被设置为覆盖塑料支撑体12和导电条纹14，并且具有4×10 -6Ω/ cm 3的电阻率或较小，膜厚度为20nm以上且500nm以下。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013016671A Transparent conductive film, method for producing the same, and organic thin-film solar cell 审中-公开
标题翻译：透明导电膜，其制造方法和有机薄膜太阳能电池
公开(公告)号：JP2013016671A
公开(公告)日：2013-01-24
申请号：JP2011148793
申请日：2011-07-05
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI , TSUKAHARA JIRO
IPC分类号： H01L51/42
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a transparent conductive film which is excellent in all of electrical conductivity, optical transparency, and smoothness, by an easy process.SOLUTION: A transparent conductive film 1 includes: an auxiliary electrode layer 11 provided with auxiliary metal wiring 21 having a plurality of openings 20, and a transparent resin 31 filling at least the openings 20; and a conductive resin layer 12 formed on the auxiliary electrode layer 11. The transparent resin 31 is obtained by polymerizing a monomer composition 30 having a low affinity to at least a surface of the auxiliary metal wiring 21.
摘要翻译：要解决的问题：通过简单的方法提供导电性，光学透明性和光滑性全部优异的透明导电膜。透明导电膜1包括：设置有具有多个开口20的辅助金属布线21的辅助电极层11和至少填充有开口20的透明树脂31; 和形成在辅助电极层11上的导电树脂层12.透明树脂31通过使至少与辅助金属布线21的表面具有低亲和力的单体组合物30聚合而得到。版权所有（C） 2013年，JPO＆INPIT

8. 发明专利

JP2012069803A Organic thin-film solar cell and method for manufacturing the same 审中-公开
标题翻译：有机薄膜太阳能电池及其制造方法
公开(公告)号：JP2012069803A
公开(公告)日：2012-04-05
申请号：JP2010214273
申请日：2010-09-24
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： AZUMA KOHEI , TSUKAHARA JIRO
IPC分类号： H01L51/42
CPC分类号： H01L51/4253 , H01L2251/303 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a flexible and transparent bulk-heterojunction organic thin-film solar cell whose power generation efficiency is less likely to be deteriorated over time.SOLUTION: The organic thin-film solar cell comprises a first transparent electrode 18, an electron block layer 20, a bulk-heterojunction photoelectric conversion layer 22, a first transparent inorganic oxide layer 24, a second transparent electrode containing a doped second transparent inorganic oxide layer 26, in this order on a plastic film substrate 12.
摘要翻译：要解决的问题：提供一种灵活且透明的本体异质结有机薄膜太阳能电池，其发电效率随时间而不太可能劣化。解决方案：有机薄膜太阳能电池包括第一透明电极18，电子阻挡层20，体异质结光电转换层22，第一透明无机氧化物层24，含有掺杂第二透明电极的第二透明电极透明无机氧化物层26，依次在塑料薄膜基材12上。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010018479A Metal oxide film, its manufacturing method, and semiconductor device 有权
标题翻译：金属氧化物膜，其制造方法和半导体器件
公开(公告)号：JP2010018479A
公开(公告)日：2010-01-28
申请号：JP2008180042
申请日：2008-07-10
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NANGU MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： C01G9/02 , C04B35/00 , C04B35/453 , H01L21/336 , H01L21/368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide film of In-Zn-O system which can be manufactured by a comparatively low temperature liquid phase method, and has excellent characteristics as a semiconductor active layer such as TFT or the like. SOLUTION: The metal oxide film 40 is a metal oxide film which has an amorphous structure, is deposited on a substrate 10, and the main component metal element of which is In and Zn. The metal oxide film 40 has a hydroxy group in the film, and the metal oxide film has a composition distribution that satisfies the following formula (1): C Zn (T)/C In (T)≥4.0×C Zn (B)/C In (B) (1) (wherein, C Zn (B)/C In (B) exhibits a Zn/In mole ratio in the film surface of the substrate side, and C Zn (T)/C In (T) exhibits a Zn/In mole ratio in the film surface of the opposite side of the substrate). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以通过相对低温液相法制造的In-Zn-O体系的金属氧化物膜，并且作为诸如TFT等的半导体有源层具有优异的特性。解决方案：金属氧化物膜40是具有非晶结构的金属氧化物膜，沉积在基板10上，其主要成分金属元素是In和Zn。金属氧化物膜40在膜中具有羟基，金属氧化物膜的组成分布满足下式（1）：C Zn （T）/℃< /SB>(T)≥4.0×CZn(B)/CIn(B）（1）（其中，C Zn B）/ C （B）在基材侧的膜表面中表现出Zn / In摩尔比，并且C（SB）/ C In （T）在衬底的相对侧的膜表面中表现出Zn / In摩尔比）。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009167087A Oriented inorganic crystalline film, process for producing the same and semiconductor device 有权
标题翻译：面向无机结晶膜，其制造方法和半导体器件
公开(公告)号：JP2009167087A
公开(公告)日：2009-07-30
申请号：JP2008320678
申请日：2008-12-17
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , HIRAI HIROYUKI , TANAKA ATSUSHI , KODA KATSUHIRO , AZUMA KOHEI , SUNAKAWA HIROSHI
IPC分类号： C30B1/04 , C04B35/00 , C30B29/22 , H01L21/20 , H01L21/336 , H01L21/368 , H01L29/786
CPC分类号： H01L21/02565 , C30B1/02 , C30B29/22 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an oriented inorganic crystalline film such as a composite oxide on a substrate not having orientation. SOLUTION: A non-monocrystalline film 12 containing inorganic crystalline particles 20 is formed on an amorphous substrate 11 such as a glass substrate by a liquid phase technique using a raw-material solution containing an organic solvent and a raw material including the inorganic crystalline particles 20 having a layered crystal structure. Then, the oriented inorganic crystalline film 1 is produced by heating the non-monocrystalline film 12 to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film 12 to crystallize the non-monocrystalline film 12 by using a portion of the inorganic crystalline particles 20 as crystal nuclei. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供在不具有取向的基板上形成诸如复合氧化物的取向无机结晶膜的方法。解决方案：含有无机结晶颗粒20的非单晶膜12通过液相技术在诸如玻璃基板的非晶基材11上使用包含有机溶剂的原料溶液和包含无机结晶颗粒的原料形成具有层状晶体结构的结晶粒子20。然后，通过将非单晶膜12加热到等于或高于非单晶膜12的结晶温度的温度来制造取向无机结晶膜1，以使非单晶膜12通过使用一部分无机结晶粒子20为晶核。版权所有（C）2009，JPO＆INPIT

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