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1. 发明专利

JP2010018479A Metal oxide film, its manufacturing method, and semiconductor device 有权
标题翻译：金属氧化物膜，其制造方法和半导体器件
公开(公告)号：JP2010018479A
公开(公告)日：2010-01-28
申请号：JP2008180042
申请日：2008-07-10
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NANGU MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： C01G9/02 , C04B35/00 , C04B35/453 , H01L21/336 , H01L21/368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide film of In-Zn-O system which can be manufactured by a comparatively low temperature liquid phase method, and has excellent characteristics as a semiconductor active layer such as TFT or the like. SOLUTION: The metal oxide film 40 is a metal oxide film which has an amorphous structure, is deposited on a substrate 10, and the main component metal element of which is In and Zn. The metal oxide film 40 has a hydroxy group in the film, and the metal oxide film has a composition distribution that satisfies the following formula (1): C Zn (T)/C In (T)≥4.0×C Zn (B)/C In (B) (1) (wherein, C Zn (B)/C In (B) exhibits a Zn/In mole ratio in the film surface of the substrate side, and C Zn (T)/C In (T) exhibits a Zn/In mole ratio in the film surface of the opposite side of the substrate). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以通过相对低温液相法制造的In-Zn-O体系的金属氧化物膜，并且作为诸如TFT等的半导体有源层具有优异的特性。解决方案：金属氧化物膜40是具有非晶结构的金属氧化物膜，沉积在基板10上，其主要成分金属元素是In和Zn。金属氧化物膜40在膜中具有羟基，金属氧化物膜的组成分布满足下式（1）：C Zn （T）/℃< /SB>(T)≥4.0×CZn(B)/CIn(B）（1）（其中，C Zn B）/ C （B）在基材侧的膜表面中表现出Zn / In摩尔比，并且C（SB）/ C In （T）在衬底的相对侧的膜表面中表现出Zn / In摩尔比）。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009252962A Semiconductor device, manufacturing method of semiconductor device and display device 有权
标题翻译：半导体器件，半导体器件和显示器件的制造方法
公开(公告)号：JP2009252962A
公开(公告)日：2009-10-29
申请号：JP2008098346
申请日：2008-04-04
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1292 , H01L29/7869 , H01L51/0004 , H01L51/0558
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variations in characteristics of a drain current value which are caused by low dimension precision in manufacturing by a printing technology, and to provide a manufacturing method of the semiconductor device and a display device. SOLUTION: The semiconductor device includes a substrate and a channel region which is formed on the substrate by a printing process wherein a relationship L≥2a is satisfied where L is a channel length of the channel region and (a) is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel length L; and a relationship W≥2b is satisfied where W is a channel width of the channel region and (b) is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制由印刷技术制造的低尺寸精度引起的漏极电流值的特性变化的半导体器件，并且提供半导体器件的制造方法和显示设备。解决方案：半导体器件包括衬底和通过印刷工艺在衬底上形成的沟道区，其中满足L≥2a的关系，其中L是沟道区的沟道长度，（a）是最小的在图案尺寸和图案间尺寸之间的尺寸在与定义通道长度L的图案相同的层中; 并且满足W≥2b的关系，其中W是沟道区的沟道宽度，（b）是与定义沟道宽度W的图案在同一层中的图案尺寸和图案间尺寸中的最小尺寸。
版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009252821A Inorganic film, manufacturing method therefor, and semiconductor device 有权
标题翻译：无机膜，其制造方法和半导体器件
公开(公告)号：JP2009252821A
公开(公告)日：2009-10-29
申请号：JP2008096030
申请日：2008-04-02
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NANGU MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： H01L29/24 , C01G23/00 , C01G39/00 , C01G41/00 , H01L21/20 , H01L21/336 , H01L29/26 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an inorganic film with good quality, having a specific resistance that is suitable for driving a transistor.
SOLUTION: The inorganic film expressed by general formula N
a M
b Q
c O
d (where N refers to Zn or Mg, M refers to Ti, W or Mo, Q refers to In or Fe, and a, b, c and d are positive real numbers) is prepared, by applying a material liquid containing at least one of a N oxide, alkoxide and an organic metal compound, at least one of a M oxide, alkoxide and an organic metal compound, at least one of a Q oxide, alkoxide and an organic metal compound, and an organic solvent on a substrate for forming the film and thermally treating it.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有适合于驱动晶体管的电阻率的高质量的无机膜。
解决方案：由通式N表示的无机膜 N是指Zn或Mg，M是指Ti，W或Mo，Q是指In或Fe，a，b，c和d是正实数），通过涂布含有至少一种 N氧化物，醇盐和有机金属化合物，M氧化物，醇盐和有机金属化合物中的至少一种，Q氧化物，醇盐和有机金属化合物中的至少一种，以及用于形成薄膜和热处理。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010021333A Metal oxide film and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属氧化物膜及其制造方法和半导体器件
公开(公告)号：JP2010021333A
公开(公告)日：2010-01-28
申请号：JP2008180043
申请日：2008-07-10
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide film which is manufactured by a relatively-low-temperature liquid phase method and has excellent characteristics as a semiconductor active layer of a TFT etc.
SOLUTION: The metal oxide film 40 is an amorphous structure film in which a hydroxyl group is present in the film and which has a composition distribution satisfying the following conditions. In the composition of a film surface on a substrate side, principal component metal elements are In and Zn. C
Zn (B)/C
In (B)=0.5 to 2.0 and C
Ga+Al (B)/C
In+Zn (B)=0.0 to 0.125. In the composition of a film surface on the opposite side from the substrate side, principal component metal elements are at least one of In and Zn, and Ga and Al. C
Zn (T)/C
In (T)=0.5 to 2.0 and C
Ga+Al (T)/C
In+Zn (T)≥0.375. Here, C
Zn /C
In represents a Zn/In mol ratio and C
Ga+Al /C
In+Zn represents a Ga+Al/In+Zn mol ratio. Further, (B) represents the film surface on the substrate side and (T) represents the film surface on the opposite side from the substrate side.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供通过相对低温液相法制造并具有作为TFT等的半导体有源层的优异特性的金属氧化物膜。解决方案：金属氧化物膜 40是其中羟基存在于膜中并具有满足以下条件的组成分布的非晶结构膜。在基板侧的膜表面的组成中，主成分金属元素为In和Zn。（B）/ C （B）= 0.5〜2.0，C Ga + Al （B）/ C + Zn（B）= 0.0〜0.125。在与基板侧相反一侧的膜表面的组成中，主成分金属元素为In和Zn中的至少一种，Ga和Al中的至少一种。（T）/ C （T）= 0.5-2.0和C Ga + Al （T）/ C +锌（T）≥0.375。这里，C / C In 表示Zn / In摩尔比，C Ga + Al SB>表示Ga + Al / In + Zn摩尔比。此外，（B）表示基板侧的膜表面，（T）表示与基板侧相反一侧的膜表面。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009267399A Semiconductor device, manufacturing method therefor, display device, and manufacturing method therefor 审中-公开
标题翻译：半导体器件，其制造方法，显示器件及其制造方法
公开(公告)号：JP2009267399A
公开(公告)日：2009-11-12
申请号：JP2009091567
申请日：2009-04-03
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L21/336 , G02F1/1368 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses generation of a dark current and is suitable for a current driving element of an organic EL device or the like, to provide a manufacturing method of the semiconductor device, and to provide a display device provided with the semiconductor device. SOLUTION: The semiconductor device includes a substrate 11 and a semiconductor layer 18 having a channel region, which consists of an oxide semiconductor which satisfies Vc/Va>4, wherein Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供抑制暗电流的产生并且适合于有机EL器件等的电流驱动元件的半导体器件，以提供半导体器件的制造方法，并且提供设置有半导体器件的显示装置。解决方案：半导体器件包括衬底11和具有沟道区的半导体层18，半导体层18由满足Vc / Va> 4的氧化物半导体组成，其中Vc是结晶组分的体积比，Va是非结晶成分的体积比。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009290113A Semiconductor device and manufacturing method thereof, sensor, and electro-optic device 有权
标题翻译：半导体器件及其制造方法，传感器和电光器件
公开(公告)号：JP2009290113A
公开(公告)日：2009-12-10
申请号：JP2008143255
申请日：2008-05-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L51/50
CPC分类号： H01L21/28194 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To increase the resistance of only a channel region of an inorganic semiconductor film formed in a low resistance state after forming the inorganic semiconductor film, in a method of manufacturing a semiconductor device. SOLUTION: On a substrate 10, a gate electrode 20, a gate insulation film 30, and an inorganic oxide film 40 are formed in order. Then, a source electrode 62 and a drain electrode 63 are so formed as to cover part of the inorganic oxide film 40. Carrier density in a portion of a region of the inorganic oxide film 40 not covered by the electrodes which is used as a channel region 44 of the semiconductor device is reduced by oxidation treatment. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在半导体器件的制造方法中，为了增加在形成无机半导体膜之后在低电阻状态下形成的无机半导体膜的沟道区域的电阻。解决方案：在基板10上依次形成栅极电极20，栅极绝缘膜30和无机氧化物膜40。然后，源电极62和漏极63形成为覆盖无机氧化物膜40的一部分。无机氧化物膜40的未被被用作沟道的电极覆盖的区域的一部分中的载流子密度通过氧化处理来减少半导体器件的区域44。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009290111A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2009290111A
公开(公告)日：2009-12-10
申请号：JP2008143253
申请日：2008-05-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L21/268 , H01L21/02554 , H01L21/02664 , H01L21/02686 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To improve a characteristic of a semiconductor device by using a low-temperature process, in a semiconductor device using a ZnO film for an active layer. SOLUTION: In an active layer formation process of the semiconductor device using a ZnO film 40 for an active layer, laser annealing L1 is executed to the ZnO film 40 by a pulse laser of ultraviolet light to reduce resistance thereof, and a specific resistance value of a channel part of the ZnO film 40 excessively reduced in resistance then is increased to a value ≥10 3 Ω cm by an oxidation treatment. COPYRIGHT: (C)2010,JPO&INPIT

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