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    • 9. 发明专利
    • Method for producing a reaction-sintered silicon carbide structure
    • 空值
    • JP5085575B2
    • 2012-11-28
    • JP2009004894
    • 2009-01-13
    • 株式会社東芝
    • 常治 亀田章子 須山義康 伊藤茂樹 丸山式彦 飯田
    • C04B35/573B28B1/26B28B3/02B28B3/26C04B35/565F28F21/02
    • F28F21/04
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing a reaction sintered silicon carbide structure which has excellent structural strength, corrosion resistance, durability, and the like in a wide service temperature range from room temperature up to high temperature and can easily and efficiently manufacture even a small-sized structure having an intricate shape with high dimensional accuracy. SOLUTION: The method for manufacturing the reaction sintered silicon carbide structure is characterized as follows. A molded body containing silicon carbide and carbon powders is formed using a core 7, and the molded body has a pore 5 corresponding to the configuration of the core 7 inside. The obtained molded body is subjected to a binder removing treatment to form a degreased body, thereafter the degreased body is heated to be impregnated with molten silicon and to be subjected to reaction sintering, thereby making an integral sintered compact. COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题:提供一种在室温至高温的广泛使用温度范围内具有优异的结构强度,耐腐蚀性,耐久性等的反应烧结碳化硅结构体的制造方法,并且容易 并且高效地制造具有高尺寸精度的复杂形状的小尺寸结构。 反应烧结碳化硅结构的制造方法的特征如下。 使用芯7形成包含碳化硅和碳粉末的成型体,并且成型体具有与内部的芯体7的构造对应的孔5。 对得到的成形体进行粘合剂除去处理,形成脱脂体,然后将脱脂体加热浸渍熔融硅,进行反应烧结,制成整体烧结体。 版权所有(C)2009,JPO&INPIT