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1. 发明专利

JP2015056412A 電力用半導体装置および電力用半導体装置の製造方法有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：JP2015056412A
公开(公告)日：2015-03-23
申请号：JP2013186900
申请日：2013-09-10
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： YONEDA YUTAKA , FUJINO JUNJI , KAWASHIMA YUJI , YANAGIMOTO TATSUNORI , KIKUCHI MASAO
IPC分类号： H01L25/07 , H01L21/336 , H01L21/60 , H01L21/607 , H01L25/18 , H01L29/12 , H01L29/739 , H01L29/78
摘要：【課題】電極端子が導体パターンや電力用半導体素子の表面電極に超音波接合された電力用半導体装置の信頼性を向上することを目的としている。【解決手段】本発明の電力用半導体装置100は、導体パターン52aが形成された絶縁基板(セラミック基板5)と、導体パターン52aの上に配設された電力用半導体素子1と、電極端子3とを備え、電極端子3は、本体部と、予め本体部よりも薄く形成された薄肉部(先端部3b)とを有し、薄肉部(先端部3b)は、導体パターン52aに超音波接合された超音波接合部20を有することを特徴とする。【選択図】図1
摘要翻译：要解决的问题：提高电极端子与具有超声波的功率半导体元件的导体图案或表面电极接合的功率半导体器件的可靠性。解决方案：功率半导体器件100包括绝缘板（陶瓷其上形成有导体图案52a的基板5，布置在导体图案52a上的功率半导体元件1和电极端子3.电极端子3包括主体部分和薄壁部分（尖端部分3b）预先形成为比身体部分薄。薄壁部（前端部3b）包括用超声波与导体图案52a连接的超声波接合部20。

2. 发明专利

JP2014179376A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014179376A
公开(公告)日：2014-09-25
申请号：JP2013050753
申请日：2013-03-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO , USUI OSAMU , YOSHIMATSU NAOKI
IPC分类号： H01L25/07 , H01L23/473 , H01L25/18
CPC分类号： H01L24/01 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which balances compactification of the semiconductor device with improvement in reliability of the semiconductor device and has a high output.SOLUTION: A semiconductor device 100 comprises: a circuit board 2 on which a semiconductor element 1 is mounted; a base plate 4 on which the circuit board is mounted; and a resin housing 6 which encapsulates the components such as the semiconductor element 1, the circuit board 2 and the base plate 4, and which has a first surface and an opposed second surface. The resin housing has a through hole 6a and a cylindrical member 10 inside which is composed of a material having rigidity higher than that of a material composing the resin housing. A rear face of the base plate is exposed on the first surface of the resin housing. One end of the cylindrical member is exposed on the second surface of the resin housing.
摘要翻译：要解决的问题：提供一种使半导体器件的紧凑化平衡的半导体器件，提高半导体器件的可靠性并具有高输出。解决方案：半导体器件100包括：半导体元件1 安装; 安装有电路板的基板4; 以及树脂壳体6，其封装诸如半导体元件1，电路板2和基板4的部件，并且具有第一表面和相对的第二表面。树脂壳体具有通孔6a和圆筒构件10，在该圆筒构件10内部由比构成树脂壳体的材料的刚性高的材料构成。基板的后表面暴露在树脂外壳的第一表面上。圆筒部件的一端露出在树脂外壳的第二表面上。

3. 发明专利

JP2014143293A Manufacturing method of power semiconductor device and power semiconductor device 有权
标题翻译：功率半导体器件和功率半导体器件的制造方法
公开(公告)号：JP2014143293A
公开(公告)日：2014-08-07
申请号：JP2013010770
申请日：2013-01-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OGAWA SHOHEI , FUJINO JUNJI , KIKUCHI MASAO
IPC分类号： H01L23/29
CPC分类号： H01L2224/48091 , H01L2224/48472 , H01L2224/4903 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a power semiconductor device which is easily manufactured, attains good heat radiation performance and insulation quality, and is highly reliable.SOLUTION: A manufacturing method of a power semiconductor device includes the steps of: conductively joining a power semiconductor element 1 to one surface of a heat spreader 2; thermocompression bonding a metal base plate 3 to the other surface 2f of the heat spreader 2 through an insulation sheet 4; and removing or inclining a peripheral part 2m including a part of a thermocompression bonded region 2f of the heat spreader 2 so that the peripheral part 2m is separated from the metal base plate 3.
摘要翻译：要解决的问题：为了获得容易制造的功率半导体器件，获得良好的散热性能和绝缘品质，并且是高度可靠的。解决方案：功率半导体器件的制造方法包括以下步骤：将功率半导体元件1到散热器2的一个表面; 通过绝缘片4将金属基板3热压到散热器2的另一个表面2f上; 并且移除或倾斜包括散热器2的热压接合部分2f的一部分的周边部分2m，使得周边部分2m与金属基板3分离。

4. 发明专利

JP2013149730A Power semiconductor module and manufacturing method of the same 有权
标题翻译：功率半导体模块及其制造方法
公开(公告)号：JP2013149730A
公开(公告)日：2013-08-01
申请号：JP2012008083
申请日：2012-01-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： USUI OSAMU , YOSHIMATSU NAOKI , KIKUCHI MASAO
IPC分类号： H01L25/07 , H01L23/29 , H01L25/18
CPC分类号： H01L24/97 , H01L21/561 , H01L23/3107 , H01L23/4334 , H01L23/49541 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/06181 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/3755 , H01L2224/40137 , H01L2224/40139 , H01L2224/40247 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/73213 , H01L2224/73215 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/92246 , H01L2224/92247 , H01L2224/97 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2224/84
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module having high cooling performance at low cost.SOLUTION: First chip major surfaces of semiconductor chips 120a, 140a are joined to a heat spreader 160a, and second chip major surfaces of the semiconductor chips 120a, 140a are joined to a first electrode 250a. First chip major surfaces of semiconductor chips 120b, 140b are joined to a heat spreader 160b, and second chip major surfaces of the semiconductor chips 120b, 140b are joined to a first electrode 250b. Multiple electrodes 250a, 250b, 270b, 290a, 290b are supplied by a lead frame. An insulation member 210 is provided at the opposite side of the chips 120a, 140a, 120b, 140b when viewed from the heat spreaders 160a, 160b. An insulation substrate is provided at the opposite side of the chips 120a, 140a, 120b, 140b when viewed from the first electrodes 250a, 250b.
摘要翻译：要解决的问题：以低成本提供具有高冷却性能的功率半导体模块。解决方案：半导体芯片120a，140a的第一芯片主表面连接到散热器160a，并且半导体芯片120a的第二芯片主表面， 140a连接到第一电极250a。半导体芯片120b，140b的第一芯片主表面连接到散热器160b，并且半导体芯片120b，140b的第二芯片主表面接合到第一电极250b。多个电极250a，250b，270b，290a，290b由引线框架提供。当从散热器160a，160b观察时，绝缘构件210设置在芯片120a，140a，120b，140b的相对侧。当从第一电极250a，250b观察时，绝缘基板设置在芯片120a，140a，120b，140b的相对侧。

5. 发明专利

JP2013134156A Apparatus and method for inspecting insulation defect of semiconductor module 有权
标题翻译：用于检查半导体模块绝缘缺陷的装置和方法
公开(公告)号：JP2013134156A
公开(公告)日：2013-07-08
申请号：JP2011284694
申请日：2011-12-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGA KENICHI , SHIODA HIRONORI , KIKUCHI MASAO , FUNAHASHI KAZUO
IPC分类号： G01R31/12 , G01R31/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for inspecting an insulation defect of a semiconductor module, which can determine existence/nonexistence of a partial discharge defect of the semiconductor module due to a void which has not yet caused dielectric breakdown.SOLUTION: The insulation defect inspection apparatus includes: a high voltage generation part composed of a high voltage power source for applying a high voltage to a semiconductor module to be a measuring object and a high voltage control part for controlling the voltage and frequency of the high voltage power source; measurement means for measuring the temperature of the semiconductor module; and an analyzer for determining existence/nonexistence of a partial discharge defect in the semiconductor module from a temperature change when the high voltage is applied based on output data from the measurement means.
摘要翻译：要解决的问题：提供一种用于检查半导体模块的绝缘缺陷的装置和方法，其可以由于还没有引起电介质破坏的空隙而确定半导体模块的局部放电缺陷的存在/不存在。：绝缘缺陷检查装置包括：高电压发生部，其由用于向要测量对象的半导体模块施加高电压的高电压电源和用于控制高电压的电压和频率的高电压控制部能量源; 用于测量半导体模块的温度的测量装置; 以及分析器，用于基于来自测量装置的输出数据，根据施加高电压的温度变化来确定半导体模块中的局部放电缺陷的存在/不存在。

6. 发明专利

JP2013102242A Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：JP2013102242A
公开(公告)日：2013-05-23
申请号：JP2013042877
申请日：2013-03-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO
IPC分类号： H01L25/07 , H01L23/28 , H01L25/18
CPC分类号： H01L24/33 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which inhibits the size increase of the device and the increase of inductance.SOLUTION: A power semiconductor device of this invention includes: a power semiconductor element 4; a metal block 7 which connects with the power semiconductor element 4 through an upper surface electrode pattern 100, selectively formed on an upper surface of the power semiconductor element 4 and serving as a first upper surface electrode pattern, the metal block 7 serving as a first metal block; and a mold resin 9 filling so as to cover the power semiconductor element 4 and the metal block 7. An upper surface of the metal block 7 is exposed from a surface of the mold resin 9.
摘要翻译：要解决的问题：提供抑制器件尺寸增加和电感增加的功率半导体器件。解决方案：本发明的功率半导体器件包括：功率半导体元件4; 金属块7，其通过上表面电极图案100与功率半导体元件4连接，选择性地形成在功率半导体元件4的上表面上并用作第一上表面电极图案，金属块7用作第一金属块以及填充以覆盖功率半导体元件4和金属块7的模制树脂9。金属块7的上表面从模制树脂9的表面露出。版权所有（C）2013， JPO和INPIT

7. 发明专利

JP2013046016A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013046016A
公开(公告)日：2013-03-04
申请号：JP2011184800
申请日：2011-08-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIYAMOTO NOBORU , KIKUCHI MASAO
IPC分类号： H01L23/40
CPC分类号： H01L23/34 , H01L23/36 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/0657 , H01L2224/26175 , H01L2224/27013 , H01L2224/29013 , H01L2224/29014 , H01L2224/2919 , H01L2224/29191 , H01L2224/30051 , H01L2224/30519 , H01L2224/8314 , H01L2224/83192 , H01L2224/83194 , H01L2924/10155 , H01L2924/10158 , H01L2924/13055 , H01L2924/181 , Y10T156/10 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which enables a semiconductor module to be fixed to a cooling body with sufficient joining strength and sufficiently cools the semiconductor module while reducing the number of components, and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device 10 according to the invention includes: a semiconductor module 14 having a heat conduction part 16 formed by a metal and a mold resin 18 for exposing the heat conduction part on a surface; a cooling body 12 fixed to the semiconductor module 14 by a joining material 20; and a heat conduction material 22 formed between the heat conduction part 16 and the cooling body 12 and thermally connecting the heat conduction part 16 with the cooling body 12.
摘要翻译：解决的问题：提供一种半导体器件，其能够使半导体模块以足够的接合强度固定到冷却体，并且在减少元件数量的同时充分冷却半导体模块，并且提供一种制造方法半导体器件。解决方案：根据本发明的半导体器件10包括：半导体模块14，其具有由金属形成的导热部分16和用于暴露表面上的导热部分的模制树脂18; 通过接合材料20固定到半导体模块14的冷却体12; 以及形成在导热部16和冷却体12之间并将导热部16与冷却体12热连接的导热材料22.版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013021254A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013021254A
公开(公告)日：2013-01-31
申请号：JP2011155525
申请日：2011-07-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO
IPC分类号： H01L23/34
CPC分类号： H01L23/36 , H01L23/3107 , H01L23/3735 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L24/92 , H01L2224/06181 , H01L2224/291 , H01L2224/30181 , H01L2224/32245 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2224/48247 , H01L2224/48472 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/92147 , H01L2224/92247 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/014 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which improves heat radiation performance while suppressing stress to a semiconductor element, and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device according to this invention includes: a semiconductor element 1; a first metal body 2 provided on a rear surface of the semiconductor element 1; a first insulation layer 4 provided on a rear surface of the first metal body 2; a second metal body 3 provided on a rear surface of the first insulation layer 4; a third metal body 9 provided on a surface of the semiconductor element 1; a second insulation layer 10 provided on a surface of the third metal body 9; and a fourth metal body 11 provided on a surface of the second insulation layer 10. The second metal body 3 is thinner than the first metal body 2, and the fourth metal body 11 is thicker than the third metal body 9.
摘要翻译：要解决的问题：提供一种在抑制对半导体元件的应力的同时提高散热性能的半导体器件，并提供半导体器件的制造方法。解决方案：根据本发明的半导体器件包括：半导体元件1; 设置在半导体元件1的后表面上的第一金属体2; 设置在第一金属体2的后表面上的第一绝缘层4; 设置在第一绝缘层4的后表面上的第二金属体3; 设置在半导体元件1的表面上的第三金属体9; 设置在第三金属体9的表面上的第二绝缘层10; 以及设置在第二绝缘层10的表面上的第四金属体11.第二金属体3比第一金属体2薄，第四金属体11比第三金属体9厚。（C）2013，JPO＆INPIT

9. 发明专利

JP2010268558A Rotating electric machine 有权
标题翻译：旋转电机
公开(公告)号：JP2010268558A
公开(公告)日：2010-11-25
申请号：JP2009116398
申请日：2009-05-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKECHI ATSUSHI , KIKUCHI MASAO , ISODA HITOSHI , KATO MASAKI , FUJITA NOBUHIKO
IPC分类号： H02K9/22 , H02K9/06 , H02K11/00
CPC分类号： H02K11/048 , H02K9/06 , H02K9/22 , H02K19/365
摘要： PROBLEM TO BE SOLVED: To provide a rotating electric machine that prevents heat generated from a stator winding from being transmitted to an inverter circuit.
SOLUTION: The rotating electric machine includes a rotor 15 having a field winding 14, and a stator 16 surrounding the rotor 15 and having the stator winding 16a. One end of a rear bracket 11 is connected to the stator 16. A heat sink assembly 150 in which a switching element for controlling the field winding 14 and the stator winding 16a is mounted on a heat sink 151 is set in the rear bracket 11. The heat sink assembly 151 is fixed on a protrusion 111 protruded from an end face of the rear bracket 11.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止定子绕组产生的热量传递给逆变器电路的旋转电机。解决方案：旋转电机包括具有励磁绕组14的转子15和围绕转子15并具有定子绕组16a的定子16。后支架11的一端连接到定子16.在后支架11中设置散热器组件150，其中用于控制励磁绕组14的开关元件和定子绕组16a安装在散热器151上。散热器组件151固定在从后支架11的端面突出的突起111上。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010251487A Circuit device, and method of manufacturing the circuit device 有权
标题翻译：电路装置以及制造电路装置的方法
公开(公告)号：JP2010251487A
公开(公告)日：2010-11-04
申请号：JP2009098584
申请日：2009-04-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MITSUI TAKAO , KIKUCHI MASAO , HAYASHI RYOHEI , ISHII RYUICHI
IPC分类号： H05K1/18 , H05K3/28 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To obtain a circuit device which packages a plurality of electronic components in proximity on a circuit board, and also has superior junction reliability between a lead terminal of the electronic component and a through-hole of the circuit board.
SOLUTION: The circuit device includes: a guide member provided with a recessed guide mechanism having an opening and a positioning hole forming part having a positioning hole; an electronic component in which a main frame is inserted into the guide mechanism, and the lead terminal is inserted into the positioning hole; the circuit board which is provided on the outer face side of the positioning hole forming part of the guide member, and in which the lead terminal extended from the positioning hole is inserted into the through-hole for joint; and a base plate covering the opening of the guide member opposing to the positioning hole forming part.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了获得在电路板附近封装多个电子部件的电路装置，并且在电子部件的引线端子和电路板的通孔之间具有优异的结可靠性。解决方案：电路装置包括：引导构件，其具有具有开口的凹入引导机构和具有定位孔的定位孔形成部; 其中主框架插入到引导机构中的电子部件，并且引线端子插入到定位孔中; 设置在形成引导部件的定位孔的外表面侧的电路板，其中从定位孔延伸的引线端子插入到用于接合的通孔中; 以及覆盖与定位孔形成部相对的引导构件的开口的基板。版权所有（C）2011，JPO＆INPIT

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