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1. 发明专利

JP2014116546A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014116546A
公开(公告)日：2014-06-26
申请号：JP2012271420
申请日：2012-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MURATA DAISUKE , YOSHIMATSU NAOKI , USUI OSAMU
IPC分类号： H01L23/473 , H01L23/40
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device which can prevent increase in size of a manufacturing apparatus and a transport device by reducing the size of a semiconductor module; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: mounting a semiconductor element 6 on a mounting part 3a of a base plate 3 of a cooling fin 5; encapsulating the semiconductor element 6 and the mounting part 3a with a resin 7 to form a semiconductor module 2; inserting an extension part 3b of the base plate 3 which extends from the mounting part 3a in a lateral direction into an insertion port 8 of a secure part 9 of a cooling jacket 1; and securing to the cooling jacket 1, an extension part 3c of the base plate 3, which extends from the mounting part 3a in a direction opposite to the extension part 3b in a state where the extension part 3b is inserted into the insertion port 8 to attach the semiconductor module 2 to the cooling jacket 1.
摘要翻译：要解决的问题：通过减小半导体模块的尺寸，获得能够防止制造装置和输送装置的尺寸增大的半导体装置; 并提供半导体器件的制造方法。解决方案：半导体器件制造方法包括：将半导体元件6安装在冷却片5的基板3的安装部分3a上; 用树脂7封装半导体元件6和安装部分3a以形成半导体模块2; 将从安装部分3a沿横向延伸的基板3的延伸部分3b插入到冷却套1的固定部分9的插入口8中; 并且将冷却套1固定在基板3的延伸部3c上，该延伸部3c在延伸部3b插入到插入口8的状态下从安装部3a沿与延伸部3b相反的方向延伸到将半导体模块2附接到冷却套1。

2. 发明专利

JP2014053442A Plate laminated type cooling device 审中-公开
标题翻译：板式层压式冷却装置
公开(公告)号：JP2014053442A
公开(公告)日：2014-03-20
申请号：JP2012196774
申请日：2012-09-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKUTA HIROTAKA , IMOTO YUJI , USUI OSAMU
IPC分类号： H01L23/473 , H05K7/20
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce pressure loss and to suppress corrosion in a plate laminated type cooling device.SOLUTION: A plate laminated type cooling device includes: a metallic bottom plate; a plurality of fin laminates which are fixed to the bottom plate while being separated from each other and each of which is formed by laminating a plurality of fins; and a housing in which the bottom plate and the plurality of fin laminates are housed and a flow inlet and a flow outlet for a coolant are formed. Each of the plurality of fins has a cut-off mark on one side surface on a short side. The plurality of fins are formed by processing both side surfaces on the longitudinal side into a corrugated shape.
摘要翻译：要解决的问题：为了减少压片损失并抑制板层压式冷却装置的腐蚀。解决方案：一种板层压式冷却装置，包括：金属底板; 多个翼片叠层体，它们彼此分离地固定在底板上，并且各层叠层叠多个翅片; 以及容纳底板和多个翅片叠片的壳体，并且形成有用于冷却剂的流入口和流出口。多个翅片中的每一个在短边的一个侧表面上具有切断标记。多个翅片通过将纵向侧的两个侧表面加工成波纹状而形成。

3. 发明专利

JP2010027814A Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：JP2010027814A
公开(公告)日：2010-02-04
申请号：JP2008186603
申请日：2008-07-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OI TAKESHI , OKA SEIJI , TAIKAI YOSHIKO , USUI OSAMU , NAKAYAMA YASUSHI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H05K3/32 , H01L23/3121 , H01L24/28 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/162 , H01L2224/0603 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2224/48699 , H01L2224/4911 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/1815 , H01L2924/19043 , H01L2924/30107 , H05K3/284 , H05K2201/1031 , H05K2201/10333 , H05K2201/10962 , Y02P70/611 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512
摘要： PROBLEM TO BE SOLVED: To obtain a power semiconductor device reducing failures occurring in a main terminal section by the connection of external wiring, having high yield and excellent productivity, and sealed with a transfer molding resin with high reliability. SOLUTION: In the power semiconductor device, a power semiconductor element that is bonded to the wiring pattern of a circuit board, a cylindrical external terminal communication section, and a wiring formation means for electrically connecting the power semiconductor element and the cylindrical external terminal communication section, etc., are sealed with a transfer molding resin. The cylindrical external terminal communication section is installed roughly perpendicularly to the wiring pattern, and the external terminal is inserted and connected to the cylindrical external terminal communication section. A plurality of cylindrical external terminal communication sections are two-dimensionally arranged in each of the wiring patterns acting as the main circuit. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得功率半导体装置，通过外部布线的连接减少在主端子部分发生的故障，具有高产率和优异的生产率，并且用高可靠性的传递模塑树脂密封。解决方案：在功率半导体器件中，接合到电路板的布线图案的功率半导体元件，圆柱形外部端子连通部分和用于将功率半导体元件和圆柱形外部电连接的布线形成装置终端通信部等用传递模塑树脂密封。圆筒形外部端子连通部分大致垂直于布线图案安装，外部端子插入并连接到圆筒形外部端子通信部分。在用作主电路的每个布线图案中，二维地布置有多个圆柱形外部端子连通部。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2003033002A Power converter 有权
标题翻译：电源转换器
公开(公告)号：JP2003033002A
公开(公告)日：2003-01-31
申请号：JP2001219163
申请日：2001-07-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： USUI OSAMU , ITO HIROSHI , SUZUKI AKIHIRO , NAKATAKE HIROSHI , ASAEDA TAKEAKI
IPC分类号： H05K7/20 , H02M1/00
摘要： PROBLEM TO BE SOLVED: To provide a power converter which enables prevention of thermal interference of other heat sinks, and increase of the number of semiconductor devices without the increase of the area of its portions facing a cooling gas. SOLUTION: This is a power converter provided with cooling units 1a, 1d which are fitted with a plurality of heat sinks 3a-3f having a plurality of radiating fins, and heat receiving boards for mounting semiconductor devices on and transmitting heat generated by the semiconductor devices to the radiating fins, and have unit frames 2a, 2d to be air ducts for supplying and discharging a cooling gas to and from the radiating fins. The air ducts are s-shaped, and near the centers of the letters S the heat sinks are arranged in parallel to the flow of the cooling gas along directions crossing the directions of the cooling gas flowing in the air ducts. They are so formed that the cooling gas led in from the entrance of each cooling unit changes its direction, is branched into the radiating fins of each heat sink and flows, changes its direction again after that, and is led out from the exit of the cooling unit.
摘要翻译：要解决的问题：提供一种功率转换器，其能够防止其他散热器的热干扰，并且增加半导体器件的数量而不增加面向冷却气体的部分的面积。解决方案：这是一个电源转换器，设有冷却单元1a，1d，它们装有多个具有多个散热片的散热片3a-3f，以及用于将半导体器件安装在其上并传递由半导体器件产生的热的热接收板并且具有将框架2a，2d设置成用于向散热片供给和排出冷却气体的空气管道。空气管道是s形的，并且在字母S的中心附近，散热器沿着与在空气管道中流动的冷却气体的方向交叉的方向平行于冷却气体的流动布置。它们形成为使得从每个冷却单元的入口引入的冷却气体改变其方向，分支成每个散热器的散热片并流动，并在其之后再次改变其方向，并从其出口冷却单元。

5. 发明专利

JP2014036077A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014036077A
公开(公告)日：2014-02-24
申请号：JP2012175661
申请日：2012-08-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , KIKUCHI MASAO , USUI OSAMU , MURATA DAISUKE
IPC分类号： H01L23/48
CPC分类号： H01L2224/40 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can bond an inner lead and a semiconductor element at an intended distance in a height direction from each other in a manufacturing process by a simple structure, and provide a semiconductor device manufacturing method which can bond an inner lead and a semiconductor element at an intended distance in a height direction from each other.SOLUTION: A semiconductor device according to the present embodiment comprises: a metal block 2; a semiconductor element bonded on the metal block 2; and an inner lead 1c bonded on a top face of the semiconductor element. The inner lead 1c includes: a first part 1f extending from a lead frame 1a which supports the inner lead 1c to above the semiconductor element; and a second part 1g extending from above the semiconductor element in a cantilever fashion and projecting outward from the metal block 2 in a planar view by at least more than a thickness of the inner lead 1c. The semiconductor element, a bonded part of the inner lead 1c with the semiconductor element and the second part 1g are encapsulated by a resin 3.
摘要翻译：要解决的问题：提供一种半导体器件，其可以通过简单的结构在制造过程中将内引线和半导体元件在高度方向上的预定距离彼此接合，并且提供可以键合的半导体器件制造方法内引线和半导体元件，其高度方向彼此相对于预定距离。本实施方式的半导体器件包括：金属块2; 结合在金属块2上的半导体元件; 以及接合在半导体元件的顶面上的内引线1c。内引线1c包括：从引线框架1a延伸的第一部分1f，引线框架1a将内引线1c支撑到半导体元件上方; 以及第二部分1g，其以悬臂方式从半导体元件上方延伸，并且在平面视图中从金属块2向外突出至少大于内引线1c的厚度。半导体元件，具有半导体元件的内引线1c和第二部分1g的接合部分被树脂3封装。

6. 发明专利

JP2013157398A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013157398A
公开(公告)日：2013-08-15
申请号：JP2012015539
申请日：2012-01-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , USUI OSAMU
IPC分类号： H01L25/07 , H01L21/56 , H01L23/50 , H01L25/18
CPC分类号： H01L2224/49171 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same, capable of preventing thermal interference to a control IC element caused by heat generation when a power semiconductor element is in operation.SOLUTION: A semiconductor device comprises: a first mold part 8 encapsulating power semiconductor elements 1 and 2 by a transfer mold; a second mold part 13 encapsulating a control IC element 9 by the transfer mold; a relay terminal 6 connecting the first mold part and the second mold part; main terminals 4 and 5 for connecting the first mold part and the outside; and a signal terminal 12 for connecting the second mold part and the outside.
摘要翻译：要解决的问题：提供一种半导体器件及其制造方法，能够防止在功率半导体元件工作时由发热引起的对于控制IC元件的热干扰。解决方案：半导体器件包括：第一模具部分8通过转移模具封装功率半导体元件1和2; 通过转移模具封装控制IC元件9的第二模具部分13; 连接第一模具部件和第二模具部件的继电器端子6; 用于连接第一模具部分和外部的主端子4和5; 以及用于连接第二模具部件和外部的信号端子12。

7. 发明专利

JP2013093631A Power module manufacturing method 有权
标题翻译：电源模块制造方法
公开(公告)号：JP2013093631A
公开(公告)日：2013-05-16
申请号：JP2013030256
申请日：2013-02-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： USUI OSAMU , KIMOTO NOBUYOSHI , KIKUCHI MASAO
IPC分类号： H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L24/33 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power module having improved cooling performance without sacrificing insulation performance.SOLUTION: A power module manufacturing method comprises: a step of forming a structure obtained by laminating a first heat spreader 4, semiconductor chips 1, 2 and a second heat spreader 8 in this order, adhering on one principal surface of the first heat spreader 4, a first insulation sheet 9 composed of an uncured thermosetting resin that is integrated with a first fixed plate 11, and adhering on one principal surface of the second heat spreader 8, a second insulation sheet 10 composed of an uncured thermosetting resin that is integrated with a second fixed plate 12; a step of placing the structure in a cavity of a mold for press molding; a step of clamping an upper mold 14 and a lower mold 15; and a step of curing the first insulation sheet 9, the second insulation sheet 10 and an uncured mold resin composed of a thermosetting resin by raising a temperature of the mold and implanting the uncured mold resin.
摘要翻译：要解决的问题：提供具有改善的冷却性能而不牺牲绝缘性能的功率模块。解决方案：一种功率模块的制造方法，其特征在于，包括以下步骤：依次层叠第一散热器4，半导体芯片1,2和第二散热器8而得到的结构，散热器4，由与第一固定板11一体化并粘附在第二散热器8的一个主表面上的未固化的热固性树脂构成的第一绝缘片9，由未固化的热固性树脂构成的第二绝缘片10，与第二固定板12成一体; 将结构放置在用于压模的模具的空腔中的步骤; 夹紧上模具14和下模具15的步骤; 以及通过提高模具的温度并植入未固化的模制树脂来固化第一绝缘片9，第二绝缘片10和由热固性树脂构成的未固化的模制树脂的步骤。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012104583A Power conversion device 审中-公开
标题翻译：电源转换器件
公开(公告)号：JP2012104583A
公开(公告)日：2012-05-31
申请号：JP2010250655
申请日：2010-11-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： USUI OSAMU , HASHIMO SEIJI
IPC分类号： H01L23/473 , H01L23/40 , H05K7/20
CPC分类号： H01L2224/36 , H01L2224/37147 , H01L2224/376 , H01L2224/40 , H01L2224/40137 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To reduce thermal resistance of power semiconductor modules and radiators and to provide a power conversion device with further reduced size.SOLUTION: A power conversion device of the present invention comprises first power semiconductor modules 1 bonded to a first surface of a first radiator 5 via first bonding materials 3, and a second power semiconductor modules 2 bonded to a first surface of a second radiator 6 via second bonding materials 4. The first radiator 5 and the second radiator 6 are disposed so that their second surfaces, which are the surfaces opposite to the surfaces to which the first and second power semiconductor modules 1 and 2 are bonded, are faced to each other, and coolant serially flows through the first radiator 5 and the second radiator 6.
摘要翻译：要解决的问题：降低功率半导体模块和散热器的热阻，并提供进一步减小尺寸的电力转换装置。解决方案：本发明的电力转换装置包括通过第一接合材料3接合到第一散热器5的第一表面的第一功率半导体模块1和接合到第二接地材料3的第一表面的第二功率半导体模块2 散热器6经由第二接合材料4.第一散热器5和第二散热器6被设置为使得它们的第二表面是与第一和第二功率半导体模块1和2接合的表面相对的表面面对并且冷却剂顺次流过第一散热器5和第二散热器6.版权所有：（C）2012，JPO＆INPIT

9. 发明专利

JP2011228528A Power block and power semiconductor module using the same 审中-公开
标题翻译：使用该功能块和功率半导体模块
公开(公告)号：JP2011228528A
公开(公告)日：2011-11-10
申请号：JP2010097902
申请日：2010-04-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAGUCHI YOSHIHIRO , OKA SEIJI , USUI OSAMU , OI TAKESHI
IPC分类号： H01L25/07 , H01L21/56 , H01L25/18
CPC分类号： H01L24/49 , H01L23/3121 , H01L24/32 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/40225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/4943 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a power block securing compatibility between the power block using a lead free solder and a transfer mold resin and a power block where they are not used and to provide a power semiconductor module using the power block.SOLUTION: The power block includes an insulating substrate 22, conductor patterns 24, 26 and 28 formed on the insulating substrate, a power semiconductor chip 36 fixed onto the conductor pattern by a lead free solder 32, a plurality of electrodes 16 and 18 which are electrically connected to the power semiconductor chip and extend to an upper direction of the insulating substrate, and a transfer mold resin 12 formed to cover the conductor pattern, the lead free solder, the power semiconductor chip and the plurality of electrodes. The plurality of electrodes are exposed to the same plane as an external face in a directly above direction of the conductor pattern among external faces of the transfer mold resin.
摘要翻译：要解决的问题：提供使用无铅焊料的电源块和转移模制树脂之间的兼容性的功率块以及不使用它们的功率块，并且使用该功率块来提供功率半导体模块。解决方案：功率块包括绝缘基板22，形成在绝缘基板上的导体图案24,26和28，通过无铅焊料32固定到导体图案上的功率半导体芯片36，多个电极16和 18，电连接到功率半导体芯片并延伸到绝缘基板的上方，以及形成为覆盖导体图案，无铅焊料，功率半导体芯片和多个电极的转印模塑树脂12。多个电极在转印模塑树脂的外表面之间的导体图案的正上方的方向上暴露于与外表面相同的平面。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011114176A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2011114176A
公开(公告)日：2011-06-09
申请号：JP2009269562
申请日：2009-11-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO , USUI OSAMU
IPC分类号： H01L25/07 , H01L23/29 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/48091 , H01L2224/73265 , H01L2224/92247 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device that suppresses deterioration in heat dissipation performance and insulation performance.
SOLUTION: The power semiconductor device 101 includes a power semiconductor element 1 as a first power semiconductor element, metal members 6, 8 as a pair of metal members arranged with the power semiconductor element 1 interposed therebetween, a pair of insulating layers 12a, 12b laminated on metal plates 11a, 11b as a pair of heat sinks with the pair of metal members 6, 8 interposed therebetween, and a filling resin 18 charged while covering at least the power semiconductor element 1, the pair of metal members 6, 8, and the pair of insulating layers 12a, 12b. The coefficient of thermal expansion of the pair of insulating layers 12a, 12b is substantially equal to that of the filling resin 18.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制散热性能和绝缘性能劣化的功率半导体器件。解决方案：功率半导体器件101包括作为第一功率半导体元件的功率半导体元件1，设置有功率半导体元件1的一对金属构件的金属构件6,8，一对绝缘层12a ，12b，作为一对散热器与金属构件6,8之间插入的金属板11a，11b，以及填充树脂18，至少覆盖功率半导体元件1，一对金属构件6， 8和一对绝缘层12a，12b。一对绝缘层12a，12b的热膨胀系数基本上等于填充树脂18的热膨胀系数。版权所有（C）2011，JPO＆INPIT

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