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1. 发明专利

JP2011190559A Finely adjustable belt 有权
标题翻译：精致可调皮带
公开(公告)号：JP2011190559A
公开(公告)日：2011-09-29
申请号：JP2010058859
申请日：2010-03-16
申请人： Kenichi Hanasaka , Yuki Hashimoto , Hisae Naka , Yuya Tanaka , 久枝中 , 悠希橋本 , 雄也田中 , 謙一花坂
发明人： HASHIMOTO YUKI , HANASAKA KENICHI , TANAKA YUYA , NAKA HISAE
IPC分类号： A41F9/02 , A44B11/24
摘要： PROBLEM TO BE SOLVED: To provide a finely adjustable belt solving the following problem that a conventional finely adjustable belt structured so that a buckle body is moved to adjust the whole length of the belt, and fine serrated parts of the buckle body are slid to make fine adjustment of the length has poor durability resulting generation of nicks on the blade part of the fine serrated parts for example, and/or danger caused when used because of the sharpness of the blades.
SOLUTION: The finely adjustable belt includes: a belt in which holes are made while leaving spaces in width and length directions; and a buckle having a pin inserted into the hole of the belt to fix the length of the belt and movable in the width direction, and a bar member supporting the pin. The pin has an annular part the base part of which is engaged with the bar member, and a key protruding to the inside of the annular part. The bar member has a groove through which the pin moves on the bar member in its width direction and its rotational direction. The pin and the bar member have such a structure that the key of the pin can freely move through the groove of the bar member.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种解决以下问题的解决以下问题，即传统的可调节的带被构造成使得带扣体移动以调节带的整个长度，并且带扣体的细小锯齿状部分是滑动以进行长度的微调，例如耐磨性差，导致细锯齿部分的刀片部分产生切口，和/或由于刀片的锐度而使用时产生的危险。
解决方案：可调节的皮带包括：带，其中在宽度和长度方向留下空间的同时制成孔; 以及带扣，其具有插入所述带的孔中以固定所述带的长度并可沿宽度方向移动的带扣，以及支撑所述销的杆构件。销有一个环形部分，其基部与杆件啮合，以及一个突出到环形部分内侧的钥匙。杆构件具有凹槽，销通过该槽在杆构件上沿其宽度方向及其旋转方向移动。销和杆构件具有这样的结构，使得销的键可以自由地移动通过杆构件的槽。版权所有（C）2011，JPO＆INPIT

2. 发明申请

US20100243429A1 METHOD OF MANUFACTURING IMPLANT AND METHOD OF MANUFACTURING ARTIFICIAL DENTAL ROOT 有权
标题翻译：制造植入物的方法和制造人造牙根的方法
公开(公告)号：US20100243429A1
公开(公告)日：2010-09-30
申请号：US12441219
申请日：2008-12-09
申请人： Hideki Aoki , Masashi Toyama , Hiroto Fujimaki , Yuki Hashimoto
发明人： Hideki Aoki , Masashi Toyama , Hiroto Fujimaki , Yuki Hashimoto
IPC分类号： A61C5/08 , B24C1/00
CPC分类号： B24C1/06 , A61C8/00 , A61C13/0007 , A61C2008/0046 , A61F2/30771 , A61F2/3094 , A61F2002/30906 , B24C11/00
摘要： A method for producing an implant whose surface is roughened by the sandblast method using shot material containing fluoroapatite. Fluoroapatite, compared to hydroxyapatite, has poor biocompatibility, but is superior in hardness. It also has a property of being dissolved in acid. As a result, by the sandblast method using shot material containing fluoroapatite, the surface roughening is performed quite effectively, and shot materials remained on the surface can easily be removed by acid.
摘要翻译：一种通过使用含有磷灰石的喷射材料通过喷砂法使表面粗糙化的植入物的制造方法。氟磷灰石与羟基磷灰石相比具有差的生物相容性，但硬度优越。它也具有溶解在酸中的性质。结果，通过使用含有磷灰石的喷射材料的喷砂法，表面粗糙化得到很好的效果，残留在表面上的喷射材料可以容易地被酸除去。

3. 发明授权

US5446694A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5446694A
公开(公告)日：1995-08-29
申请号：US225968
申请日：1994-04-08
申请人： Takayuki Tanaka , Junichi Suyama , Kazukiyo Fukudome , Yuki Hashimoto
发明人： Takayuki Tanaka , Junichi Suyama , Kazukiyo Fukudome , Yuki Hashimoto
IPC分类号： G11C11/407 , G11C5/14 , G11C11/4074 , G11C11/409 , G11C11/4091 , G11C11/34
CPC分类号： G11C5/147 , G11C11/4074 , G11C11/4091
摘要： A semiconductor memory device of the present invention comprises an internal power supplying circuit electrically connected to an external power supply having an external source potential and for supplying an internal potential lower than the external source potential, a precharging circuit for supplying a half potential of the internal potential to each of memory cells and bit lines, and a switching circuit electrically connected between each bit line and the precharging circuit and controlled based on an equalize signal output from a control circuit and having the same potential as the external source potential. The semiconductor memory device of such a type that even if a potential on each bit line increases excessively, such a potential does not exert an influence on each memory cell, can be realized owing to the above structure.
摘要翻译：本发明的半导体存储器件包括：内部供电电路，其电连接到具有外部源极电位的外部电源，并提供低于外部电位电位的内部电位;预充电电路，用于提供内部电位的半电位每个存储单元和位线的电位，以及电连接在每个位线和预充电电路之间的开关电路，并且基于从控制电路输出并具有与外部源极电位相同的电位的均衡信号来控制。这种类型的半导体存储器件，即使每个位线上的电位都过大，这种电位也不会对每个存储单元产生影响，所以可以通过上述结构实现。

4. 发明授权

US07737182B2 Pharmaceuticals for xerosis 失效
标题翻译：用于干燥的药物
公开(公告)号：US07737182B2
公开(公告)日：2010-06-15
申请号：US11049641
申请日：2005-02-04
申请人： Iwao Arai , Nobuko Futaki , Yuki Hashimoto , Masanori Sugimoto
发明人： Iwao Arai , Nobuko Futaki , Yuki Hashimoto , Masanori Sugimoto
IPC分类号： A01N53/00 , C07C59/00 , C07C69/74
CPC分类号： A61K31/557 , A61K31/5575 , Y10S514/861 , Y10S514/887
摘要： A method for or treating xerosis by applying a prostaglandin D receptor selective agonist to a mammal.
摘要翻译：通过将前列腺素D受体选择性激动剂施用于哺乳动物来治疗或治疗干燥症的方法。

5. 发明授权

US06433523B1 Semiconductor integrated circuit and method for generating internal supply voltage 有权
公开(公告)号：US06433523B1
公开(公告)日：2002-08-13
申请号：US09774753
申请日：2001-02-01
申请人： Yuki Hashimoto
发明人： Yuki Hashimoto
IPC分类号： G05F140
摘要： A system supply voltage, supplied from an external supply circuit, is lowered to generate an internal supply voltage for an internal circuit when the system supply voltage is higher than a breakdown voltage of the internal circuit. The system supply voltage is directly supplied to the internal circuit when the system supply voltage is not higher than the breakdown voltage of the internal circuit.

6. 发明授权

US06091095A Semiconductor storage 有权
标题翻译：半导体存储
公开(公告)号：US06091095A
公开(公告)日：2000-07-18
申请号：US362550
申请日：1999-07-28
申请人： Tadahiro Omata , Hidenori Uehara , Yuki Hashimoto , Shinya Takahashi
发明人： Tadahiro Omata , Hidenori Uehara , Yuki Hashimoto , Shinya Takahashi
IPC分类号： G11C11/409 , H01L21/8242 , H01L27/02 , H01L27/10 , H01L27/108 , H01L27/11 , H01L27/08
CPC分类号： H01L27/1104 , H01L27/0207
摘要： A sense amplifier for amplifying the potential difference between paired bit lines has a first transistor having the drain thereof connected to a bit line BL and the gate thereof connected to a bit line /BL, a second transistor having the drain thereof connected to the bit line /BL and the gate thereof connected to the bit line BL, and a third transistor and a fourth transistor provided in association with the first and second transistors, an identical sense amplifier actuating signal being applied to the gates thereof.
摘要翻译：用于放大成对位线之间的电位差的读出放大器具有第一晶体管，其漏极连接到位线BL，其栅极连接到位线/ BL，第二晶体管的漏极连接到位线 BL和其连接到位线BL的栅极，以及与第一和第二晶体管相关联地设置的第三晶体管和第四晶体管，将相同的读出放大器启动信号施加到其栅极。

7. 发明授权

US5942809A Method and apparatus for generating internal supply voltage 失效
标题翻译：产生内部电源电压的方法和装置
公开(公告)号：US5942809A
公开(公告)日：1999-08-24
申请号：US998424
申请日：1997-12-24
申请人： Yuki Hashimoto
发明人： Yuki Hashimoto
IPC分类号： G05F1/46 , G05F3/24 , G11C5/14 , H02J1/00
CPC分类号： G11C5/143 , G05F1/465 , G05F3/24 , G11C5/147 , Y10T307/50 , Y10T307/74 , Y10T307/766
摘要： An apparatus and method for generating an internal supply voltage for a semiconductor integrated circuit, includes a first voltage generator which generates a voltage in response to a predetermined characteristic of the semiconductor integrated circuit, a second voltage generator which generates a second voltage from a reference voltage generator, and a selecting circuit which selects from among the first and second voltage. The selected voltage is suppled to an internal supply voltage generator which generates therefrom an internal supply voltage for the semiconductor integrated circuit. The first voltage is selected for regulating the internal supply voltage, being controlled in level according to the characteristic of the semiconductor integrated circuit.
摘要翻译：一种用于产生半导体集成电路的内部电源电压的装置和方法，包括响应于半导体集成电路的预定特性产生电压的第一电压发生器，从参考电压产生第二电压的第二电压发生器发电机，以及从第一和第二电压中选择的选择电路。选择的电压被提供给内部电源电压发生器，从而产生用于半导体集成电路的内部电源电压。选择第一电压用于调节内部电源电压，根据半导体集成电路的特性进行电平控制。

8. 发明授权

US5255223A Semiconductor memory device having alternatively operated equalizing and erasing functions 失效
标题翻译：半导体存储器件具有可选地操作的均衡和擦除功能
公开(公告)号：US5255223A
公开(公告)日：1993-10-19
申请号：US731337
申请日：1991-07-17
申请人： Takayuki Tanaka , Shinya Takahashi , Yuki Hashimoto , Toshiharu Watanabe
发明人： Takayuki Tanaka , Shinya Takahashi , Yuki Hashimoto , Toshiharu Watanabe
IPC分类号： G11C11/409 , G11C7/20 , G11C11/401 , G11C11/407 , G11C11/4072 , G11C11/41 , H01L21/8242 , H01L27/108
CPC分类号： G11C7/20 , G11C11/4072
摘要： In a semiconductor memory device comprising memory cells connected at the intersections of pairs of bit lines and word lines, sense amplifiers activated by the potentials on common nodes to amplify the potential differences between the respective pairs of the bit lines, an equalizing circuit activated by an equalizing signal to apply the potential on a power supply node to the pairs of bit lines, and a reference potential supplying circuit for generating a reference potential and supplying the reference potential to the power supply node through a switching circuit, a circuit is provided to block the application of the reference potential to the bit lines and the sense amplifier common nodes and to apply a negative potential to the bit lines. The word lines are held at the ground level, so the physical "0" is written into all the memory cells simultaneously.

9. 发明授权

US08018673B2 Disk drive, method for measuring clearance and method for writing servo patterns 有权
标题翻译：磁盘驱动器，测量间隙的方法和写入伺服模式的方法
公开(公告)号：US08018673B2
公开(公告)日：2011-09-13
申请号：US12618685
申请日：2009-11-13
申请人： Manabu Saikawa , Atsushi Takeichi , Yuki Hashimoto , Kenji Kuroki , Mitsuhiro Shoda
发明人： Manabu Saikawa , Atsushi Takeichi , Yuki Hashimoto , Kenji Kuroki , Mitsuhiro Shoda
IPC分类号： G11B21/02 , G11B27/36
CPC分类号： G11B5/6005 , G11B5/59633 , G11B5/59638 , G11B5/6064
摘要： A disk drive. The disk drive includes a plurality of head-sliders, an actuator, a plurality of clearance adjustment sections, and a controller. Each head-slider includes a slider and a magnetic-recording head on the slider for accessing a disk for storing data. The plurality of head-sliders is secured to the actuator that is configured to move the plurality of head-sliders concurrently. Each clearance adjustment section corresponds to each head-slider of the plurality of head-sliders and adjusts a clearance of the corresponding head-slider. In addition, the controller is configured to position the actuator by servo control with a first head-slider selected from the plurality of head-sliders, to change a clearance of a second head-slider different from the first head-slider by controlling a clearance adjustment section of the second head-slider to bring the second head-slider into contact with a disk, and to detect the contact to measure the clearance of the second head-slider.
摘要翻译：磁盘驱动器磁盘驱动器包括多个磁头滑块，致动器，多个间隙调整部分和控制器。每个头部滑动器包括滑动器和滑块上的磁记录头，用于访问用于存储数据的磁盘。多个头部滑块被固定到致动器，其被构造成同时移动多个头部滑块。每个间隙调节部分对应于多个头部滑块中的每个头部滑块，并且调整相应的头部 - 滑块的间隙。此外，控制器被配置为通过伺服控制来定位致动器，其中第一头滑块选自多个头部滑块，以通过控制间隙来改变与第一头部滑块不同的第二头部滑块的间隙调节部分，使第二磁头滑块与磁盘接触，并检测接触件以测量第二磁头滑块的间隙。

10. 发明申请

US20100204320A1 PHARMACEUTICALS FOR XEROSIS 审中-公开
标题翻译：用于XEROSIS的药物
公开(公告)号：US20100204320A1
公开(公告)日：2010-08-12
申请号：US12762876
申请日：2010-04-19
申请人： Iwao ARAI , Nobuko Futaki , Yuki Hashimoto , Masanori Sugimoto
发明人： Iwao ARAI , Nobuko Futaki , Yuki Hashimoto , Masanori Sugimoto
IPC分类号： A61K31/5575 , A61P17/00 , A61P17/04
CPC分类号： A61K31/557 , A61K31/5575 , Y10S514/861 , Y10S514/887
摘要： A method for preventing or treating xerosis by applying a prostaglandin D receptor selective agonist to a mammal.
摘要翻译：一种通过向哺乳动物施用前列腺素D受体选择性激动剂来预防或治疗干燥症的方法。

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