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    • 7. 发明授权
    • Methods of forming patterns for semiconductor devices
    • 形成半导体器件图形的方法
    • US08361905B2
    • 2013-01-29
    • US12581298
    • 2009-10-19
    • Bong-cheol KimDae-youp LeeHyun-woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • Bong-cheol KimDae-youp LeeHyun-woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • H01L21/302H01L21/461H01L21/311
    • H01L21/76229H01L21/0337H01L21/0338H01L21/3086H01L21/3088H01L21/32139H01L27/105H01L27/115H01L27/11519H01L27/11526
    • Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
    • 提供了形成半导体器件的图案的方法,由此可以同时形成具有各种宽度的图案,并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。 在基板上形成双掩模层。 在双掩模层上形成可变掩模层。 在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模 层。 在第一区域中形成第一掩模图案和第一可变掩模图案,并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案, 作为蚀刻掩模,第一光致抗蚀剂图案和第二光致抗蚀剂图案。 形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。 去除第一掩模图案,然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底,并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模 第二区。
    • 10. 发明申请
    • Methods of Forming Patterns for Semiconductor Devices
    • 半导体器件形成模式的方法
    • US20100240221A1
    • 2010-09-23
    • US12581298
    • 2009-10-19
    • Bong-cheol KimDae-youp LeeHyun-Woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • Bong-cheol KimDae-youp LeeHyun-Woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • H01L21/306
    • H01L21/76229H01L21/0337H01L21/0338H01L21/3086H01L21/3088H01L21/32139H01L27/105H01L27/115H01L27/11519H01L27/11526
    • Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
    • 提供了形成半导体器件的图案的方法,由此可以同时形成具有各种宽度的图案,并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。 在基板上形成双掩模层。 在双掩模层上形成可变掩模层。 在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模 层。 在第一区域中形成第一掩模图案和第一可变掩模图案,并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案, 作为蚀刻掩模,第一光致抗蚀剂图案和第二光致抗蚀剂图案。 形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。 去除第一掩模图案,然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底,并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模 第二区。