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    • 7. 发明申请
    • Charge trap flash memory device and memory card and system including the same
    • 充电陷阱闪存设备和存储卡及系统包括相同
    • US20080246078A1
    • 2008-10-09
    • US12080315
    • 2008-04-02
    • Zong-liang HuoIn-seok YeoSeung-Hyun LimKyong-hee JooJun-kyu Yang
    • Zong-liang HuoIn-seok YeoSeung-Hyun LimKyong-hee JooJun-kyu Yang
    • H01L29/792
    • H01L21/28273B82Y10/00H01L29/42332H01L29/7881
    • A charge trap flash memory device and method of making same are provided. The device includes: a tunnel insulating layer, a charge trap layer; a blocking insulating layer; and a gate electrode sequentially formed on a substrate. The charge trap layer includes: plural trap layers comprising a first material having a first band gap energy level; spaced apart nanodots, each nanodot being at least partially surrounded by at least one of the trap layers, wherein the nanodots comprise a second material having a second band gap energy level that is lower than the first band gap energy level; and an intermediate blocking layer comprising a third material having a third band gap energy level that is higher than the first band gap energy level, formed between at least two of the trap layers. This structure prevents loss of charges from the charge trap layer and improves charge storage capacity.
    • 提供了一种电荷阱闪存器件及其制造方法。 该器件包括:隧道绝缘层,电荷陷阱层; 阻挡绝缘层; 以及依次形成在基板上的栅电极。 电荷陷阱层包括:多个陷阱层,包括具有第一带隙能级的第一材料; 间隔开的纳米点,每个纳米点至少部分地被至少一个捕获层包围,其中该纳米点包括具有低于第一带隙能级的第二带隙能级的第二材料; 以及中间阻挡层,其包括形成在至少两个捕获层之间的具有高于第一带隙能级的第三带隙能级的第三材料。 这种结构防止电荷陷阱层的电荷损失并且改善电荷存储容量。