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1. 发明申请

US20120282426A1 RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER 有权
标题翻译：电阻加热的SAPPHIRE单晶INGROT GROWER，制造电阻加热的SAPPHIRE SNGLE CRYSTAL INGOT，SAPPHIRE SNGLE CRYSTAL INGOT和SAPPHIRE WAFER的方法
公开(公告)号：US20120282426A1
公开(公告)日：2012-11-08
申请号：US13354323
申请日：2012-01-19
申请人： Do Won SONG , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
发明人： Do Won SONG , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
IPC分类号： C30B15/30 , C01F7/02 , C30B15/14
CPC分类号： C30B29/20 , C30B15/14 , C30B15/22 , C30B15/30
摘要： Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
摘要翻译：提供了电阻加热的蓝宝石单晶锭种植者，制造电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶片的方法。电阻加热的蓝宝石单晶锭种植机包括根据一个实施方案，包括室，包含在室中的坩埚并且包含氧化铝熔体，以及包括在室内并加热坩埚的电阻加热加热器。

2. 发明申请

US20050054124A1 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20050054124A1
公开(公告)日：2005-03-10
申请号：US10699438
申请日：2003-10-31
申请人： Young Hee Mun , Kun Kim , Chung Koh , Seung Pyi
发明人： Young Hee Mun , Kun Kim , Chung Koh , Seung Pyi
IPC分类号： C30B29/06 , H01L21/00 , H01L21/02 , H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

3. 发明授权

US06818569B2 Method of fabricating annealed wafer 有权
标题翻译：制造退火晶圆的方法
公开(公告)号：US06818569B2
公开(公告)日：2004-11-16
申请号：US10323733
申请日：2002-12-20
申请人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
发明人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
IPC分类号： H01L2126
CPC分类号： H01L21/324 , H01L21/3221
摘要： A method of fabricating an annealed wafer of high quality by forming a defect-free active region of a device and controlling an irregular resistivity characteristic. The method includes a first annealing step of pre-heating a silicon wafer at a temperature of about 500° C. in a furnace in an ambience of a gas selected from the group consisting of Ar, N2 and an inert gas including Ar and N2; a second annealing step of changing the ambience of the gas into a 100% H2 gas ambience, increasing the temperature to 850° C.-1,150° C., and carrying out annealing for about an hour by maintaining the increased temperature; a third annealing step of changing the ambience of the gas into a 100% Ar gas ambience, increasing the temperature to about 1,200° C., and carrying out annealing for about an hour while the temperature of about 1,200° C. is maintained; and a temperature dropping step of decreasing the temperature in the furnace below about 500° C.
摘要翻译：通过形成器件的无缺陷有源区域并控制不规则电阻率特性来制造高质量的退火晶片的方法。该方法包括第一退火步骤，在选自Ar，N 2和包括Ar和N 2的惰性气体的气体的氛围下，在炉中在约500℃的温度下预热硅晶片; 将气体的气氛改变为100％H2气氛的第二退火步骤，将温度升高至850℃-1.150℃，并通过维持升高的温度进行约1小时的退火; 将气体的气氛改变为100％Ar气体环境的第三退火步骤，将温度升高至约1200℃，并且在保持约1200℃的温度下进行约1小时的退火; 以及降低炉内温度低于约500℃的降温步骤。

4. 发明授权

US08597756B2 Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer 有权
标题翻译：电阻加热蓝宝石单晶锭生长机，电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶圆制造方法
公开(公告)号：US08597756B2
公开(公告)日：2013-12-03
申请号：US13354323
申请日：2012-01-19
申请人： Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
发明人： Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
IPC分类号： B32B3/02
CPC分类号： C30B29/20 , C30B15/14 , C30B15/22 , C30B15/30
摘要： Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
摘要翻译：提供了电阻加热的蓝宝石单晶锭种植者，制造电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶片的方法。电阻加热的蓝宝石单晶锭种植机包括根据一个实施方案，包括室，包含在室中的坩埚并且包含氧化铝熔体，以及包括在室内并加热坩埚的电阻加热加热器。

5. 发明授权

US07242075B2 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07242075B2
公开(公告)日：2007-07-10
申请号：US10699438
申请日：2003-10-31
申请人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
发明人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
IPC分类号： H01L29/32
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

6. 发明申请

US20130115859A1 SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME 审中-公开
标题翻译：抛光垫的表面处理方法及使用其的抛光方法
公开(公告)号：US20130115859A1
公开(公告)日：2013-05-09
申请号：US13669028
申请日：2012-11-05
申请人： Se Hun Choi , Kyeong Soon Kim , Young Hee Mun
发明人： Se Hun Choi , Kyeong Soon Kim , Young Hee Mun
IPC分类号： B24B37/04 , B28D5/00
CPC分类号： B24B37/042 , B24B37/044 , B24B37/245 , B28D5/00
摘要： Provided is a surface treatment method of a polishing pad. The surface treatment method of the polishing pad includes locating a wafer on the polishing pad including a polishing material, supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material included in the polishing pad, and polishing the wafer using the exposed polishing material.
摘要翻译：提供了一种抛光垫的表面处理方法。抛光垫的表面处理方法包括将晶片定位在抛光垫上，包括抛光材料，在抛光垫和晶片之间提供抛光垫抛光材料，以暴露抛光垫中所包括的抛光材料，并使用暴露的抛光材料。

7. 发明授权

US07732352B2 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07732352B2
公开(公告)日：2010-06-08
申请号：US11765973
申请日：2007-06-20
申请人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
发明人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，在预定的混合气体气氛中对晶片进行上述两步快速热处理。

8. 发明授权

US06642123B2 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates 有权
标题翻译：制造硅晶片的方法包括不同温度升温速率和冷却速率的步骤
公开(公告)号：US06642123B2
公开(公告)日：2003-11-04
申请号：US10156180
申请日：2002-05-29
申请人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
发明人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
IPC分类号： H01L2176
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： A method of fabricating a silicon wafer, which includes the steps of preparing a silicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in a diffusion furnace having an ambience of one of Ar, N2 and inert gas including Ar and N2, pre-heating and maintaining the diffusion furnace at about 500° C., changing the ambience into one of H2, Ar and inert gas including H2 and Ar successively, increasing a temperature of the diffusion furnace by a temperature-increasing speed of 50˜70° C./min between 500˜800° C., 10˜50° C./min between 800˜900° C., 0.5˜10° C./min between 900˜1000° C., and 0.1˜0.5° C./min between 1000˜1250° C., maintaining the diffusion furnace at 1200˜1250° C. for 1˜120 min, changing the ambience inside the diffusion furnace into one of Ar, N2 and inert gas ambience including Ar and N2 successively, and decreasing the temperature of the diffusion furnace down to 500 ° C. by a temperature-decreasing speed of 0.1˜0.5° C./min between 1000˜1250° C., 0.5˜10° C./min between 900˜1000° C., 10˜50° C./min between 800˜900° C., and 50˜70° C./min between 500˜800° C.
摘要翻译：一种制造硅晶片的方法，包括以下步骤：通过切片，研磨和清洁锭来制备硅晶片，将硅晶片插入具有Ar，N2和包括Ar的惰性气体之一的扩散炉中， N2，将扩散炉预热并维持在约500℃，连续地将气氛改变为包括H 2和Ar的H 2，Ar和惰性气体中的一种，将扩散炉的温度升高50℃ 在500〜800℃之间为〜70℃/分钟，800〜900℃之间为10〜50℃/分钟，900〜1000℃为0.5〜10℃/分钟，在1000〜1250℃之间为0.5℃/分钟，将扩散炉保持在1200〜1250℃1〜120分钟，将扩散炉内的氛围改变为Ar，N2和惰性气体环境中的一种，包括Ar N2连续下降，扩散炉温度降至500℃，降温速度为0.1〜0.5℃/ min，1000〜在900〜1000℃之间为0.5〜10℃/分钟，800〜900℃为10〜50℃/分钟，500〜800℃为50〜70℃/分钟 C。

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