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1. 发明申请

US20050054124A1 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20050054124A1
公开(公告)日：2005-03-10
申请号：US10699438
申请日：2003-10-31
申请人： Young Hee Mun , Kun Kim , Chung Koh , Seung Pyi
发明人： Young Hee Mun , Kun Kim , Chung Koh , Seung Pyi
IPC分类号： C30B29/06 , H01L21/00 , H01L21/02 , H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

2. 发明授权

US07242075B2 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07242075B2
公开(公告)日：2007-07-10
申请号：US10699438
申请日：2003-10-31
申请人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
发明人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
IPC分类号： H01L29/32
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

3. 发明授权

US07732352B2 Silicon wafers and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07732352B2
公开(公告)日：2010-06-08
申请号：US11765973
申请日：2007-06-20
申请人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
发明人： Young Hee Mun , Kun Kim , Chung Geun Koh , Seung Ho Pyi
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/324 , H01L21/3225
摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.
摘要翻译：通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，在预定的混合气体气氛中对晶片进行上述两步快速热处理。

4. 发明申请

US20120282426A1 RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER 有权
标题翻译：电阻加热的SAPPHIRE单晶INGROT GROWER，制造电阻加热的SAPPHIRE SNGLE CRYSTAL INGOT，SAPPHIRE SNGLE CRYSTAL INGOT和SAPPHIRE WAFER的方法
公开(公告)号：US20120282426A1
公开(公告)日：2012-11-08
申请号：US13354323
申请日：2012-01-19
申请人： Do Won SONG , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
发明人： Do Won SONG , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
IPC分类号： C30B15/30 , C01F7/02 , C30B15/14
CPC分类号： C30B29/20 , C30B15/14 , C30B15/22 , C30B15/30
摘要： Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
摘要翻译：提供了电阻加热的蓝宝石单晶锭种植者，制造电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶片的方法。电阻加热的蓝宝石单晶锭种植机包括根据一个实施方案，包括室，包含在室中的坩埚并且包含氧化铝熔体，以及包括在室内并加热坩埚的电阻加热加热器。

5. 发明授权

US08597756B2 Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer 有权
标题翻译：电阻加热蓝宝石单晶锭生长机，电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶圆制造方法
公开(公告)号：US08597756B2
公开(公告)日：2013-12-03
申请号：US13354323
申请日：2012-01-19
申请人： Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
发明人： Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
IPC分类号： B32B3/02
CPC分类号： C30B29/20 , C30B15/14 , C30B15/22 , C30B15/30
摘要： Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
摘要翻译：提供了电阻加热的蓝宝石单晶锭种植者，制造电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶片的方法。电阻加热的蓝宝石单晶锭种植机包括根据一个实施方案，包括室，包含在室中的坩埚并且包含氧化铝熔体，以及包括在室内并加热坩埚的电阻加热加热器。

6. 发明申请

US20130115859A1 SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME 审中-公开
标题翻译：抛光垫的表面处理方法及使用其的抛光方法
公开(公告)号：US20130115859A1
公开(公告)日：2013-05-09
申请号：US13669028
申请日：2012-11-05
申请人： Se Hun Choi , Kyeong Soon Kim , Young Hee Mun
发明人： Se Hun Choi , Kyeong Soon Kim , Young Hee Mun
IPC分类号： B24B37/04 , B28D5/00
CPC分类号： B24B37/042 , B24B37/044 , B24B37/245 , B28D5/00
摘要： Provided is a surface treatment method of a polishing pad. The surface treatment method of the polishing pad includes locating a wafer on the polishing pad including a polishing material, supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material included in the polishing pad, and polishing the wafer using the exposed polishing material.
摘要翻译：提供了一种抛光垫的表面处理方法。抛光垫的表面处理方法包括将晶片定位在抛光垫上，包括抛光材料，在抛光垫和晶片之间提供抛光垫抛光材料，以暴露抛光垫中所包括的抛光材料，并使用暴露的抛光材料。

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