专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060053751A1 Wrapping device and wrapping method using the wrapping device 审中-公开
标题翻译：使用包装装置的包装装置和包装方法
公开(公告)号：US20060053751A1
公开(公告)日：2006-03-16
申请号：US10521502
申请日：2004-10-07
申请人： Tomoaki Ito , Kazushige Komori , Yoshikazu Sakano , Toshikazu Takehara
发明人： Tomoaki Ito , Kazushige Komori , Yoshikazu Sakano , Toshikazu Takehara
IPC分类号： B65B11/02 , B65B51/10
CPC分类号： B65B51/14 , B65B25/002 , B65B49/08
摘要： A device for wrapping an object of substantially cuboid shape with predetermined width, length and thickness having top and bottom faces opposed in a thickness direction, front and rear end faces opposed in a longitudinal direction, and right and left side faces opposed in a width direction, in a wrapping material fusible by heating. The device has a mounting table, a movable folder, and a front face heater to heat the wrapping material to a fusing temperature. The mounting table has a front bottom step. The movable folder has a front top step movable toward the mounting table. The front top step is adapted to face the front bottom step in the thickness direction when the movable folder is moved to the mounting table. The front face heater is movable between the front bottom step and the front top step to fuse the wrapping material of the front end face.
摘要翻译：用于包裹具有预定宽度，长度和厚度的具有预定宽度，长度和厚度的物体的装置，其具有在厚度方向上相对的顶面和底面，在纵向方向上相对的前端面和后端面以及沿宽度方向相对的左右侧面在通过加热熔化的包装材料中。该装置具有安装台，活动夹和正面加热器，以将包装材料加热至定影温度。安装台具有前底部步骤。可移动夹具具有朝向安装台移动的前顶台阶。当可移动文件夹移动到安装台时，前顶台阶适于面向厚度方向上的前底部台阶。前面加热器可以在前部底部台阶和前部顶部台阶之间移动，以熔化前端面的包装材料。

2. 发明授权

US06521538B2 Method of forming a trench with a rounded bottom in a semiconductor device 有权
标题翻译：在半导体器件中形成具有圆形底部的沟槽的方法
公开(公告)号：US06521538B2
公开(公告)日：2003-02-18
申请号：US09790888
申请日：2001-02-23
申请人： Hajime Soga , Kenji Kondo , Eiji Ishikawa , Yoshikazu Sakano , Mikimasa Suzuki
发明人： Hajime Soga , Kenji Kondo , Eiji Ishikawa , Yoshikazu Sakano , Mikimasa Suzuki
IPC分类号： H01L21311
CPC分类号： H01L29/7813 , H01L21/76232 , H01L21/763 , H01L29/4236 , H01L29/66348
摘要： In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.
摘要翻译：在制造半导体器件的方法中，首先，通过各向异性蚀刻在半导体衬底上形成沟槽，并且在各向异性蚀刻期间，在沟槽的内壁上产生并沉积反应产物。然后，进行各向同性蚀刻，以在沟槽的底部的一个角部周围，而不去除反应产物。各向同性蚀刻可以围绕沟槽的角落，而不蚀刻由反应产物覆盖的沟槽的侧壁。

3. 发明授权

US6090718A Dry etching method for semiconductor substrate 失效
标题翻译：半导体衬底的干蚀刻方法
公开(公告)号：US6090718A
公开(公告)日：2000-07-18
申请号：US992108
申请日：1997-12-17
申请人： Hajime Soga , Kenji Kondo , Eiji Ishikawa , Yoshikazu Sakano , Yuji Ichikawa
发明人： Hajime Soga , Kenji Kondo , Eiji Ishikawa , Yoshikazu Sakano , Yuji Ichikawa
IPC分类号： C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01H21/302
CPC分类号： H01L21/67069 , Y10S438/905 , Y10S438/906
摘要： After performing an etching process with respect to one substrate, the substrate is taken out from an etching chamber. Then, a dummy substrate is disposed in the etching chamber and a cleaning process is performed. The cleaning process includes a cleaning step for etching reaction products produced during the etching process to be removed, a seasoning step for adjusting the atmosphere within the etching chamber and the temperature of the substrate, and a purge step for removing suspended foreign materials without generating plasma. By performing the cleaning process, the successive etching process can be performed without generating any black silicon on the substrate, thereby attaining a high production yield.
摘要翻译：在对一个基板进行蚀刻处理之后，从蚀刻室取出基板。然后，在蚀刻室内设置虚设基板，进行清洗处理。清洗过程包括用于蚀刻在要除去的蚀刻工艺期间产生的反应产物的清洁步骤，用于调节蚀刻室内的气氛的调节步骤和基板的温度，以及用于清除悬浮的异物而不产生等离子体的吹扫步骤。通过进行清洗处理，可以在基板上不产生任何黑色硅的情况下进行连续蚀刻处理，从而获得高产率。

4. 发明授权

US5522966A Dry etching process for semiconductor 失效
标题翻译：半导体干蚀刻工艺
公开(公告)号：US5522966A
公开(公告)日：1996-06-04
申请号：US152895
申请日：1993-11-17
申请人： Atsushi Komura , Yoshikazu Sakano , Kenji Kondo , Keiichi Kon , Tetsuhiko Sanbei , Shoji Miura
发明人： Atsushi Komura , Yoshikazu Sakano , Kenji Kondo , Keiichi Kon , Tetsuhiko Sanbei , Shoji Miura
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01L21/3065 , Y10S438/906
摘要： A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N.sub.2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.
摘要翻译：一种通过使用气体混合物的干蚀刻在半导体衬底的表面上形成沟槽的工艺。气体混合物包括：（1）至少包含溴的蚀刻剂气体，蚀刻半导体表面以形成沟槽，（2）包含卤素的清洁气体，其蒸发由蚀刻形成的残余物，和（3）反应性气体，例如， N2，能够与蚀刻期间形成的材料反应并且能够控制沟槽的倾斜度。

5. 发明申请

US20070227100A1 Wrapping device and wrapping method using the wrapping device 审中-公开
标题翻译：使用包装装置的包装装置和包装方法
公开(公告)号：US20070227100A1
公开(公告)日：2007-10-04
申请号：US11807523
申请日：2007-05-29
申请人： Tomoaki Ito , Kazushige Komori , Yoshikazu Sakano , Toshikazu Takehara
发明人： Tomoaki Ito , Kazushige Komori , Yoshikazu Sakano , Toshikazu Takehara
IPC分类号： B65B11/00
CPC分类号： B65B51/14 , B65B25/002 , B65B49/08
摘要： A wrapping device for manually operating to package products, particularly of cubic or cuboidal shape, includes a table, an upper side folder, a first heater, second heaters, first adjusters, second adjusters, and side interfolders. A wrapper such as a film is extended on the table and a product is placed on a recess of the table. Then, the film is folded toward the top face of the product, to which the folder is moved to fuse it by the first heater. Then, the first adjusters and the second adjusters are moved, and the table is moved downward to interfold, and fuse the film by the second heaters.
摘要翻译：用于手动操作以包装产品，特别是立方体或立方体形状的包装装置包括桌子，上侧折叠器，第一加热器，第二加热器，第一调节器，第二调节器和侧翻边。诸如电影的包装物在桌子上延伸并将产品放置在桌子的凹槽上。然后，将薄膜朝向产品的顶面折叠，文件夹移动到该表面以由第一加热器将其熔合。然后，移动第一调节器和第二调节器，并且将桌子向下移动到折叠，并且通过第二加热器将膜熔合。

6. 发明授权

US5871659A Dry etching process for semiconductor 失效
标题翻译：半导体干蚀刻工艺
公开(公告)号：US5871659A
公开(公告)日：1999-02-16
申请号：US665545
申请日：1996-06-18
申请人： Yoshikazu Sakano , Kenji Kondo , Hajime Soga , Yasuo Ishihara , Yoshifumi Okabe
发明人： Yoshikazu Sakano , Kenji Kondo , Hajime Soga , Yasuo Ishihara , Yoshifumi Okabe
IPC分类号： H01L21/302 , H01L21/3065 , B44C1/22
CPC分类号： H01L21/3065
摘要： A process for dry etching a silicon substrate, in which a mask exposing a region of the surface of the silicon substrate is formed, and the exposed region is dry etched. The dry etching is performed with a gas mixture including chlorine or a chlorine-containing gas, an oxygen-containing gas, and a fluorine-containing gas in which a ratio of a flow rate of oxygen gas to a flow rate of chlorine gas, O.sub.2 /Cl.sub.2, is selected to be from 0.6 to 3. The gas mixture may also contain a fluorine-containing gas and helium. Preferably, the gas mixture excludes carbon-containing gases. The dry etching process allows for an increased etch rate, as well as a high etch selectivity compared to that of SiO.sub.2 gas. The trench formed in the substrate by this process can be made of a larger depth with high reproducibility and good configuration. The sidewall profile angle of the trench is maintained slightly tapered, with a sidewall profile angle of approximately 90 degrees. Also, by mixing HBr gas into the gas mixture, it is possible to better control the formation of the trench. Thus, this process makes it possible to form, in a silicon substrate, a regularly configured and very deep trench with high accuracy and high etch rate.
摘要翻译：一种用于干蚀刻硅衬底的方法，其中形成露出硅衬底表面的区域的掩模，并且暴露区域被干蚀刻。干蚀刻用包括氯或含氯气体，含氧气体和含氟气体的气体混合物进行，其中氧气流量与氯气流量的比例为O 2 / Cl2被选择为0.6至3.气体混合物还可含有含氟气体和氦气。优选地，气体混合物不包括含碳气体。与SiO 2气体相比，干蚀刻工艺允许提高蚀刻速率，以及高蚀刻选择性。通过该工艺在衬底中形成的沟槽可以由更大的深度制成，具有高的再现性和良好的配置。沟槽的侧壁轮廓角保持略微渐缩，侧壁轮廓角度约为90度。此外，通过将HBr气体混入气体混合物中，可以更好地控制沟槽的形成。因此，该方法使得可以在硅衬底中形成具有高精度和高蚀刻速率的规则构造和非常深的沟槽。

7. 发明授权

US5423941A Dry etching process for semiconductor 失效
标题翻译：半导体干蚀刻工艺
公开(公告)号：US5423941A
公开(公告)日：1995-06-13
申请号：US152896
申请日：1993-11-17
申请人： Atsushi Komura , Yoshikazu Sakano , Kenji Kondo , Keiichi Kon , Tetsuhiko Sanbei , Shoji Miura
发明人： Atsushi Komura , Yoshikazu Sakano , Kenji Kondo , Keiichi Kon , Tetsuhiko Sanbei , Shoji Miura
IPC分类号： H01L21/302 , H01L21/3065 , C23F1/00
CPC分类号： H01L21/3065
摘要： A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.
摘要翻译：一种通过在半导体的表面上形成掩模来形成半导体衬底的表面上的深沟槽的方法，其规定了沟槽的位置; 然后使用气体混合物干燥蚀刻半导体表面，所述气体混合物包括（1）蚀刻剂，含溴的气体，蚀刻半导体表面以形成沟槽，（2）清洁，含卤素的气体，其蒸发由蚀刻形成的残余物; 和（3）能够与在蚀刻期间形成的材料反应的反应气体，并且能够通过蚀刻剂气体减少掩模的浪费。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式