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1. 发明申请

US20080230781A1 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method 失效
标题翻译：形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
公开(公告)号：US20080230781A1
公开(公告)日：2008-09-25
申请号：US12152944
申请日：2008-05-19
申请人： Yoichiro Numasawa , Yukinobu Murao
发明人： Yoichiro Numasawa , Yukinobu Murao
IPC分类号： H01L21/20 , H01L49/02
CPC分类号： C23C16/24 , C23C16/56 , Y10S977/814
摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate.Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.
摘要翻译：在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理硅膜形成在基板上。因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以可以轻松，低成本地生产。

2. 发明授权

US6059985A Method of processing a substrate and apparatus for the method 失效
标题翻译：处理基板的方法和方法的装置
公开(公告)号：US6059985A
公开(公告)日：2000-05-09
申请号：US826735
申请日：1997-04-04
申请人： Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： H01L21/28 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68
CPC分类号： H01L21/0209
摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
摘要翻译：处理基板的方法具有以下处理。在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过衬底的周边边缘区域。这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。

3. 发明申请

US20060276055A1 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method 审中-公开
标题翻译：形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
公开(公告)号：US20060276055A1
公开(公告)日：2006-12-07
申请号：US10645908
申请日：2003-08-22
申请人： Yoichiro Numasawa , Yukinobu Murao
发明人： Yoichiro Numasawa , Yukinobu Murao
IPC分类号： H01L21/00
CPC分类号： C23C16/24 , C23C16/56 , Y10S977/814
摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.
摘要翻译：在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理硅膜形成在基板上。因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以可以轻松，低成本地生产。

4. 发明授权

US06664496B2 Plasma processing system 有权
公开(公告)号：US06664496B2
公开(公告)日：2003-12-16
申请号：US10107304
申请日：2002-03-28
申请人： Yoshimi Watabe , Shinya Hasegawa , Yoichiro Numasawa , Yukito Nakagawa
发明人： Yoshimi Watabe , Shinya Hasegawa , Yoichiro Numasawa , Yukito Nakagawa
IPC分类号： B23K900
CPC分类号： H01J37/32082
摘要： A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

5. 发明授权

US08002947B2 Plasma treatment system and cleaning method of the same 有权
标题翻译：等离子体处理系统和清洗方法相同
公开(公告)号：US08002947B2
公开(公告)日：2011-08-23
申请号：US12289742
申请日：2008-11-03
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： B08B7/04 , B08B9/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.
摘要翻译：等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。在清洁过程中，执行步骤清洁。由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。此外，所使用的处理气体的量被切断，并且工艺成本降低。

6. 发明授权

US07666763B2 Nanosilicon semiconductor substrate manufacturing method and semiconductor circuit device using nanosilicon semiconductor substrate manufactured by the method 有权
标题翻译：纳米硅半导体衬底的制造方法和半导体电路器件采用纳米硅半导体衬底制造的方法
公开(公告)号：US07666763B2
公开(公告)日：2010-02-23
申请号：US12128465
申请日：2008-05-28
申请人： Yukinobu Murao , Akira Kumagai , Yoichiro Numasawa
发明人： Yukinobu Murao , Akira Kumagai , Yoichiro Numasawa
IPC分类号： H01L21/20
CPC分类号： H01L27/1203 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/02595 , H01L21/0262 , H01L21/28035 , H01L21/84 , H01L29/04 , H01L29/4925 , H01L29/66666 , H01L29/7827 , Y10S977/89 , Y10S977/936
摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.
摘要翻译：本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。在第一纳米硅膜上形成氮化硅膜。然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。在这样制造的纳米硅半导体衬底上形成半导体电路器件。

7. 发明申请

US20090260974A1 Apparatus and method for manufacturing halogen gas and halogen gas recovery and circulatory system 审中-公开
标题翻译：制造卤素气体和卤素气体回收和循环系统的设备和方法
公开(公告)号：US20090260974A1
公开(公告)日：2009-10-22
申请号：US12457672
申请日：2009-06-18
申请人： Yoichiro Numasawa , Tsutomu Tsukada
发明人： Yoichiro Numasawa , Tsutomu Tsukada
IPC分类号： C01B7/00
CPC分类号： H01J37/321 , B01J19/088 , B01J2219/0809 , B01J2219/0832 , B01J2219/0841 , B01J2219/0869 , B01J2219/0875 , B01J2219/0894 , C01B7/00 , C01B7/193 , H01J2237/022
摘要： The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.
摘要翻译：本发明提供了一种使用等离子体化学反应制造卤素气体的方法和装置，具有简单，实用和维护处理源材料的安全性以及能够在卤素气体相同设备中制造卤素气体的特征并且还提供能够有效地循环和使用卤素气体的卤素气体循环和回收系统。在化学式AiXj（A表示金属元素或半导体元素，X表示卤素元素，i和j表示整数）的气体在真空中引入反应容器中后，在反应容器中产生等离子体以产生等离子体化学反应。通过等离子体化学反应生成的含有卤素元素以外的元素作为主要成分的微粒从反应容器中除去，从而在反应容器中产生卤素气体。

8. 发明授权

US07091138B2 Forming method and a forming apparatus of nanocrystalline silicon structure 有权
标题翻译：纳米晶硅结构的成型方法和成型装置
公开(公告)号：US07091138B2
公开(公告)日：2006-08-15
申请号：US10927159
申请日：2004-08-27
申请人： Yoichiro Numasawa , Nobuyoshi Koshida
发明人： Yoichiro Numasawa , Nobuyoshi Koshida
IPC分类号： H01L21/31
CPC分类号： H01L21/02664 , B82Y30/00 , C23C16/02 , C23C16/24 , C23C16/56 , H01J37/321 , H01J2237/2001 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/3185
摘要： A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.
摘要翻译：纳米晶硅结构的形成方法和形成装置使得可以在低温下制备纳米晶体硅结构以具有稳定封端的密集堆积的硅晶粒并有效地控制纳米级的晶粒尺寸。具有氧化物或氮化物终止的纳米晶硅结构的形成方法和形成装置，进行用氢自由基处理衬底表面的第一步骤; 通过含硅气体的热反应沉积具有10nm或更小的晶粒尺寸的硅晶体的第二步骤; 以及通过使用氧气，氧自由基和氮自由基之一用氧或氮终止硅晶体的表面的第三步骤。

9. 发明申请

US20120100309A1 PLASMA TREATMENT APPARATUS AND PLASMA CVD APPARATUS 审中-公开
标题翻译：等离子体处理装置和等离子体CVD装置
公开(公告)号：US20120100309A1
公开(公告)日：2012-04-26
申请号：US13273258
申请日：2011-10-14
申请人： Hidekazu MIYAIRI , Yoichiro NUMASAWA , Takayuki INOUE , Kojiro TAKAHASHI , Mitsuhiro ICHIJO
发明人： Hidekazu MIYAIRI , Yoichiro NUMASAWA , Takayuki INOUE , Kojiro TAKAHASHI , Mitsuhiro ICHIJO
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45574
摘要： A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.
摘要翻译：等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。第二气体扩散室与上部电极中的第一气体管连接。上电极和室壁设置在同一轴线上。分散板包括没有气孔的中心部分和具有多个气孔的周边部分。中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

10. 发明申请

US20090095217A1 Plasma treatment system and cleaning method of the same 有权
标题翻译：等离子体处理系统和清洗方法相同
公开(公告)号：US20090095217A1
公开(公告)日：2009-04-16
申请号：US12289742
申请日：2008-11-03
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： C23C16/52
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.
摘要翻译：等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。在清洁过程中，执行步骤清洁。由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。此外，所使用的处理气体的量被切断，并且工艺成本降低。

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