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1. 发明授权

US09120072B2 Ammonia detoxification device 有权
标题翻译：氨解毒装置
公开(公告)号：US09120072B2
公开(公告)日：2015-09-01
申请号：US14001278
申请日：2012-02-02
申请人： Tsutomu Tsukada , Hiroshi Imamura , Hiroki Kuzuoka , Hiroaki Kaneshiro , Isamu Nagai , Takashi Kataoka
发明人： Tsutomu Tsukada , Hiroshi Imamura , Hiroki Kuzuoka , Hiroaki Kaneshiro , Isamu Nagai , Takashi Kataoka
IPC分类号： B01D53/58 , B01J19/00 , F23G7/06 , F23L15/02
CPC分类号： B01J19/0046 , B01D53/58 , F23G7/063 , F23G7/068 , F23J2215/10 , F23J2219/40 , F23J2219/80 , F23L15/02 , Y02A50/2346 , Y02E20/348
摘要： Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen.
摘要翻译：提供了一种氨解毒装置，当通过热分解对氨进行解毒时，能够防止产生氮氧化物。也就是说，通过使用以下方式配置氨解毒装置来解决问题：电加热器; 氨分解室，其接受待处理的含氨气体，并且使用来自所述电加热器的热量在不存在氧的情况下热分解氨; 一种热分解气体燃烧室，其接受通过氨的热分解产生的并且从氨分解室排出的待处理的含氮和氢的气体;以及供给装置，用于从外部进入热分解气体燃烧室，以燃烧氢气。

2. 发明授权

US6043608A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US6043608A
公开(公告)日：2000-03-28
申请号：US962390
申请日：1997-10-31
申请人： Seiji Samukawa , Yukito Nakagawa , Hisaaki Sato , Tsutomu Tsukada , Kibatsu Shinohara , Yasuo Niimura
发明人： Seiji Samukawa , Yukito Nakagawa , Hisaaki Sato , Tsutomu Tsukada , Kibatsu Shinohara , Yasuo Niimura
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05B37/00
CPC分类号： H01J37/32082
摘要： This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.
摘要翻译：本发明公开了一种等离子体处理装置，其使用通过向等离子体发生气体提供RF能量而产生的等离子体，在基板上进行处理。该设备包括具有泵送系统的真空室，用于将要处理的基板放置在真空室中的基板保持器，用于将等离子体产生气体引入等离子体产生空间的气体引入装置，用于提供RF 能量与等离子体产生气体。天线具有对称地设置在基板的轴线上的中心的多个天线元件和端部短路构件，使天线元件的每一端短路，从而施加与中心对称的RF电流路径。在RF能量的频率处共振的多个电路对称地形成在天线元件和端部短路部件上。通过相邻两个天线元件的总长度相加而获得的长度和相邻两个天线元件的端部之间的RF电流路径的长度对应于RF能量的波长的一秒。

3. 发明授权

US5961776A Surface processing apparatus 失效
标题翻译：表面处理装置
公开(公告)号：US5961776A
公开(公告)日：1999-10-05
申请号：US972945
申请日：1997-11-19
申请人： Hisaaki Sato , Yukito Nakagawa , Ken-ichi Takagi , Tomoaki Koide , Tsutomu Tsukada
发明人： Hisaaki Sato , Yukito Nakagawa , Ken-ichi Takagi , Tomoaki Koide , Tsutomu Tsukada
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32192
摘要： A surface processing apparatus includes a microwave generator which generates low UHF band microwaves of from 300 MHz to 1 GHz, a cavity resonator in which the microwaves generated in the microwave generator resonate in the TM 010 mode, an airtight process chamber which is connected to the cavity resonator, a radiation plate which is arranged in a part of the cavity resonator which is connected with the process chamber, the radiation plate has a plurality of radiation holes which are established symmetrically with respect to a central axis of the cavity resonator, and cover plates made of a dielectric material which close off the radiation holes in an airtight manner.
摘要翻译：表面处理装置包括：微波发生器，其生成从300MHz到1GHz的低UHF波段微波;微波发生器中产生的微波以TM 010模式谐振的空腔谐振器;连接到空腔谐振器，布置在与处理室连接的空腔谐振器的一部分中的辐射板，辐射板具有相对于空腔谐振器的中心轴对称地建立的多个辐射孔，盖由绝缘材料制成的板，其以气密方式封闭辐射孔。

4. 发明授权

US5087341A Dry etching apparatus and method 失效
标题翻译：干蚀刻装置及方法
公开(公告)号：US5087341A
公开(公告)日：1992-02-11
申请号：US538696
申请日：1990-06-18
申请人： Tsutomu Tsukada , Etsuo Wani , Koki Yasuda
发明人： Tsutomu Tsukada , Etsuo Wani , Koki Yasuda
IPC分类号： C23F4/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/02019 , C23F4/00 , H01J37/32082 , H01J37/32559 , H01L21/67069 , H01J2237/3341
摘要： A dry etching apparatus with the use of reactive gas plasma is disclosed. The apparatus comprises a vacuum chamber, and first and second electrodes opposite to each other in the chamber for generating therebetween gas plasma by discharging while introducing reactive gas in the chamber thereby etching a sample placed on the first electrode. A cover member is provided for covering at least the periphery portion positioned at the outer side of the sample on the surface of the first electrode. The reactive gas introducer is provided on the second electrode at the position opposite to the sample thereby directing the gas to the sample.
摘要翻译：公开了一种使用反应气体等离子体的干蚀刻装置。该装置包括真空室，以及在室中彼此相对的第一和第二电极，用于通过在室内引入反应性气体的同时通过排放产生气体等离子体，从而蚀刻放置在第一电极上的样品。提供盖构件，用于至少覆盖位于第一电极表面上的样品外侧的周边部分。反应气体引入器在与样品相对的位置处设置在第二电极上，从而将气体引导到样品。

5. 发明授权

US4482419A Dry etching apparatus comprising etching chambers of different etching rate distributions 失效
标题翻译：干蚀刻装置包括具有不同蚀刻速率分布的蚀刻室
公开(公告)号：US4482419A
公开(公告)日：1984-11-13
申请号：US576143
申请日：1984-02-02
申请人： Tsutomu Tsukada , Etsuo Wani , Katsumi Ukai , Teruo Saitoh
发明人： Tsutomu Tsukada , Etsuo Wani , Katsumi Ukai , Teruo Saitoh
IPC分类号： H01J37/16 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01J37/3244 , H01J37/16 , H01L21/302
摘要： In a dry etching apparatus comprising a plurality of etching chambers each of which comprises a first and a second electrode member opposite to each other, an object is successively etched in each etching chamber, with the object supported on either the first or the second electrode member, under different distributions of etching rate. When the object is placed on the first electrode member in each etching chamber and a gas is introduced through an aperture formed on the second electrode member, each distribution of etching rate can be varied by changing a position of the aperture. A side wall member may be extended from a periphery of the second electrode member towards the first electrode member in each etching chamber to confine plasma within a space defined by the first and the second electrode members and the side wall member. The side wall member is varied in length and/or diameter from an etching chamber to another to realize the different distributions of etching rate. Alternatively, a ring member may be arranged in a space between the first and the second electrode members in each etching chamber. The different distributions are established by changing a distance between the first and the second electrode members from an etching chamber to another. Electric power for the first and the second electrode members may be varied in each etching chamber.
摘要翻译：在包括多个蚀刻室的干蚀刻装置中，每个蚀刻室包括彼此相对的第一和第二电极构件，在每个蚀刻室中依次蚀刻物体，物体被支撑在第一或第二电极构件，在不同的蚀刻速率分布下。当将物体放置在每个蚀刻室中的第一电极构件上并且通过形成在第二电极构件上的孔引入气体时，可以通过改变孔的位置来改变蚀刻速率的每个分布。侧壁构件可以在每个蚀刻室中从第二电极构件的周边延伸到第一电极构件，以将等离子体限制在由第一和第二电极构件和侧壁构件限定的空间内。侧壁构件的长度和/或直径从蚀刻室变化到另一个，以实现不同的蚀刻速率分布。或者，环状构件可以布置在每个蚀刻室中的第一和第二电极构件之间的空间中。通过将第一和第二电极构件之间的距离从蚀刻室改变到另一个来建立不同的分布。在每个蚀刻室中可以改变第一和第二电极构件的电力。

6. 发明授权

US4968374A Plasma etching apparatus with dielectrically isolated electrodes 失效
标题翻译：具有介电隔离电极的等离子体蚀刻装置
公开(公告)号：US4968374A
公开(公告)日：1990-11-06
申请号：US359817
申请日：1989-06-01
申请人： Tsutomu Tsukada , Toshio Tamaki , Tatsuhiko Yoshida
发明人： Tsutomu Tsukada , Toshio Tamaki , Tatsuhiko Yoshida
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32541
摘要： A dry etching apparatus has a vacuum chamber provided therein with an RF electrode. On the RF electrode an object substrate(s) is placed. The RF electrode is covered with a substrate bed(s) and detachable dielectric members. The substrate bed(s) includes a dielectric portion and a conductive portion provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. At least one gap extension is consituted of a gap(s) between the dielectric members, a gap(s) between the dielectric members and the substrate bed(s), etc. and extends from the surface of the RF electrode to the plasma space. The gap extension(s) extends zigzaggedly from the RF electrode to the plasma space so that the plasma space can not structurally be viewed from the surface of the RF electrode irrespective the dimesions of the substrate. To the RF electrode is applied a negative DC voltage having larger absolute value than that of a negative self-bias voltage at the object substrate(s) induced by plasma discharge.

7. 发明授权

US4816638A Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US4816638A
公开(公告)日：1989-03-28
申请号：US110253
申请日：1987-10-20
申请人： Katsumi Ukai , Tsutomu Tsukada , Kouji Ikeda , Toshio Adachi
发明人： Katsumi Ukai , Tsutomu Tsukada , Kouji Ikeda , Toshio Adachi
IPC分类号： H01L21/302 , H01J37/18 , H01L21/3065 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67751 , H01J37/185
摘要： A vacuum processing apparatus comprising a load-lock chamber, a vacuum transferring chamber and a processing chamber respectively having evacuating systems for evacuating the respective chambers. The load-lock chamber has a first isolation valve for isolating and opening communication of the load-lock chamber with the atmosphere and a second isolating valve for isolating and opening communication of the load-lock chamber with the vacuum transferring chamber. The processing chamber comprises a vessel detachably located at an arranging aperture formed in a wall of the vacuum transferring chamber and closing the arranging aperture in an air-tight manner from the outside of the apparatus. A substrate arranging portion is arranged in the vacuum transferring chamber so as to be move toward and away from the vessel to form an air-tight chamber space in the vessel isolated from the vacuum transferring chamber when the substrate arranging portion has moved to the vessel. The vacuum transferring chamber comprises therein a substrate transferring mechanism for transferring the substrates along transferring passages in the vacuum transferring chamber. The substrate arranging portion comprises a substrate lifter for moving the substrate between the transferring passages and the substrate arranging portion.
摘要翻译：一种真空处理装置，包括负载锁定室，真空传送室和处理室，分别具有用于抽空各个室的抽空系统。负载锁定室具有用于隔离和打开负载锁定室与大气的连通的第一隔离阀和用于隔离和打开负载锁定室与真空传送室的连通的第二隔离阀。处理室包括可拆卸地定位在形成在真空传送室的壁中的布置孔处的容器，并且从设备的外部以气密的方式封闭布置孔。衬底布置部分布置在真空传送室中，以便朝向和远离容器移动，以在衬底布置部分移动到容器时与真空传送室隔离的容器中形成气密室空间。真空传送室包括用于沿着真空传送室中的传送通道传送基板的基板传送机构。基板布置部分包括用于在输送通道和基板布置部分之间移动基板的基板升降器。

8. 发明授权

US4399016A Plasma device comprising an intermediate electrode out of contact with a high frequency electrode to induce electrostatic attraction 失效
标题翻译：等离子体装置包括与高频电极不接触以引起静电吸引的中间电极
公开(公告)号：US4399016A
公开(公告)日：1983-08-16
申请号：US357216
申请日：1982-03-11
申请人： Tsutomu Tsukada , Hideo Takei
发明人： Tsutomu Tsukada , Hideo Takei
IPC分类号： H01L21/205 , C23C14/48 , C23C14/50 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C15/00
CPC分类号： H01J37/32431 , C23C14/50
摘要： In a support member for supporting a sample processed in a hollow space between first and second electrodes between which a high frequency a.c. voltage is supplied to produce plasma in the hollow space, a conductor is laid on the first electrode with a first dielectric layer interposed therebetween and is covered with a second dielectric layer to be attached to the sample. A d.c. voltage source is connected through the first dielectric layer out of contact with the first electrode to induce electrostatic attraction during production of the plasma and, thereby, to fixedly attach the sample to the second dielectric layer. A temperature control member is embedded in the first electrode to control a temperature of the sample. The control member may be a cooling member or a heater. A plurality of the support members may be located on the first electrode. Preferably, the first and the second dielectric layers are of epoxy resin and polyimide resin, respectively.
摘要翻译：在用于支撑处理在第一和第二电极之间的中空空间中的样品的支撑构件中，高频率交流电压被提供以在中空空间中产生等离子体，导体放置在第一电极上，其间插入有第一介电层，并且被第二电介质层覆盖以附着到样品。一个d.c. 电压源通过与第一电极不接触的第一介电层连接，以在制造等离子体期间引起静电吸引，从而将样品固定地附接到第二介电层。温度控制部件嵌入第一电极中以控制样品的温度。控制构件可以是冷却构件或加热器。多个支撑构件可以位于第一电极上。优选地，第一和第二电介质层分别是环氧树脂和聚酰亚胺树脂。

9. 发明申请

US20140056785A1 AMMONIA DETOXIFICATION DEVICE 有权
标题翻译： AMMONIA脱氧剂装置
公开(公告)号：US20140056785A1
公开(公告)日：2014-02-27
申请号：US14001278
申请日：2012-02-02
申请人： Tsutomu Tsukada , Hiroshi Imamura , Hiroki Kuzuoka , Hiroaki Kaneshiro , Isamu Nagai , Takashi Kataoka
发明人： Tsutomu Tsukada , Hiroshi Imamura , Hiroki Kuzuoka , Hiroaki Kaneshiro , Isamu Nagai , Takashi Kataoka
IPC分类号： B01J19/00
CPC分类号： B01J19/0046 , B01D53/58 , F23G7/063 , F23G7/068 , F23J2215/10 , F23J2219/40 , F23J2219/80 , F23L15/02 , Y02A50/2346 , Y02E20/348
摘要： Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen.
摘要翻译：提供了一种氨解毒装置，当通过热分解对氨进行解毒时，能够防止产生氮氧化物。也就是说，通过使用以下方式配置氨解毒装置来解决问题：电加热器; 氨分解室，其接受待处理的含氨气体，并且使用来自所述电加热器的热量在不存在氧的情况下热分解氨; 一种热分解气体燃烧室，其接受通过氨的热分解产生的并且从氨分解室排出的待处理的含氮和氢的气体;以及供给装置，用于从外部进入热分解气体燃烧室，以燃烧氢气。

10. 发明授权

US5936352A Plasma processing apparatus for producing plasma at low electron temperatures 失效
标题翻译：用于在低电子温度下产生等离子体的等离子体处理装置
公开(公告)号：US5936352A
公开(公告)日：1999-08-10
申请号：US753090
申请日：1996-11-20
申请人： Seiji Samukawa , Tsutomu Tsukada , Yukito Nakagawa , Kibatsu Shinohara , Hirofumi Matsumoto , Hiroyuki Ueyama
发明人： Seiji Samukawa , Tsutomu Tsukada , Yukito Nakagawa , Kibatsu Shinohara , Hirofumi Matsumoto , Hiroyuki Ueyama
IPC分类号： H01J37/32 , H05H1/46 , H05B37/00
CPC分类号： H01J37/3211 , H01J37/32082 , H01J37/32165 , H05H1/46 , H01J2237/3346
摘要： A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.
摘要翻译：等离子体处理装置包括等离子体室和由第一组平行天线元件和第二组平行天线元件形成的天线，第一组的天线元件与第二组的天线元件交错布置。能量源将第一相位的振荡能量提供给第一组天线元件，并将第二组相对于第二组天线振子的振荡能量提供给第二组天线元件，以在腔室中产生相反移动的能量场，使得电子被限制在在室内产生的等离子体。

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