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    • 2. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US6043608A
    • 2000-03-28
    • US962390
    • 1997-10-31
    • Seiji SamukawaYukito NakagawaHisaaki SatoTsutomu TsukadaKibatsu ShinoharaYasuo Niimura
    • Seiji SamukawaYukito NakagawaHisaaki SatoTsutomu TsukadaKibatsu ShinoharaYasuo Niimura
    • H05H1/46C23F4/00H01J37/32H01L21/205H01L21/302H01L21/3065H05B37/00
    • H01J37/32082
    • This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.
    • 本发明公开了一种等离子体处理装置,其使用通过向等离子体发生气体提供RF能量而产生的等离子体,在基板上进行处理。 该设备包括具有泵送系统的真空室,用于将要处理的基板放置在真空室中的基板保持器,用于将等离子体产生气体引入等离子体产生空间的气体引入装置,用于提供RF 能量与等离子体产生气体。 天线具有对称地设置在基板的轴线上的中心的多个天线元件和端部短路构件,使天线元件的每一端短路,从而施加与中心对称的RF电流路径。 在RF能量的频率处共振的多个电路对称地形成在天线元件和端部短路部件上。 通过相邻两个天线元件的总长度相加而获得的长度和相邻两个天线元件的端部之间的RF电流路径的长度对应于RF能量的波长的一秒。
    • 5. 发明授权
    • Dry etching apparatus comprising etching chambers of different etching
rate distributions
    • 干蚀刻装置包括具有不同蚀刻速率分布的蚀刻室
    • US4482419A
    • 1984-11-13
    • US576143
    • 1984-02-02
    • Tsutomu TsukadaEtsuo WaniKatsumi UkaiTeruo Saitoh
    • Tsutomu TsukadaEtsuo WaniKatsumi UkaiTeruo Saitoh
    • H01J37/16H01J37/32H01L21/302H01L21/3065H01L21/306B44C1/22C03C15/00C23F1/00
    • H01J37/3244H01J37/16H01L21/302
    • In a dry etching apparatus comprising a plurality of etching chambers each of which comprises a first and a second electrode member opposite to each other, an object is successively etched in each etching chamber, with the object supported on either the first or the second electrode member, under different distributions of etching rate. When the object is placed on the first electrode member in each etching chamber and a gas is introduced through an aperture formed on the second electrode member, each distribution of etching rate can be varied by changing a position of the aperture. A side wall member may be extended from a periphery of the second electrode member towards the first electrode member in each etching chamber to confine plasma within a space defined by the first and the second electrode members and the side wall member. The side wall member is varied in length and/or diameter from an etching chamber to another to realize the different distributions of etching rate. Alternatively, a ring member may be arranged in a space between the first and the second electrode members in each etching chamber. The different distributions are established by changing a distance between the first and the second electrode members from an etching chamber to another. Electric power for the first and the second electrode members may be varied in each etching chamber.
    • 在包括多个蚀刻室的干蚀刻装置中,每个蚀刻室包括彼此相对的第一和第二电极构件,在每个蚀刻室中依次蚀刻物体,物体被支撑在第一或第二电极构件 ,在不同的蚀刻速率分布下。 当将物体放置在每个蚀刻室中的第一电极构件上并且通过形成在第二电极构件上的孔引入气体时,可以通过改变孔的位置来改变蚀刻速率的每个分布。 侧壁构件可以在每个蚀刻室中从第二电极构件的周边延伸到第一电极构件,以将等离子体限制在由第一和第二电极构件和侧壁构件限定的空间内。 侧壁构件的长度和/或直径从蚀刻室变化到另一个,以实现不同的蚀刻速率分布。 或者,环状构件可以布置在每个蚀刻室中的第一和第二电极构件之间的空间中。 通过将第一和第二电极构件之间的距离从蚀刻室改变到另一个来建立不同的分布。 在每个蚀刻室中可以改变第一和第二电极构件的电力。
    • 7. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US4816638A
    • 1989-03-28
    • US110253
    • 1987-10-20
    • Katsumi UkaiTsutomu TsukadaKouji IkedaToshio Adachi
    • Katsumi UkaiTsutomu TsukadaKouji IkedaToshio Adachi
    • H01L21/302H01J37/18H01L21/3065H01L21/677B23K9/00
    • H01L21/67751H01J37/185
    • A vacuum processing apparatus comprising a load-lock chamber, a vacuum transferring chamber and a processing chamber respectively having evacuating systems for evacuating the respective chambers. The load-lock chamber has a first isolation valve for isolating and opening communication of the load-lock chamber with the atmosphere and a second isolating valve for isolating and opening communication of the load-lock chamber with the vacuum transferring chamber. The processing chamber comprises a vessel detachably located at an arranging aperture formed in a wall of the vacuum transferring chamber and closing the arranging aperture in an air-tight manner from the outside of the apparatus. A substrate arranging portion is arranged in the vacuum transferring chamber so as to be move toward and away from the vessel to form an air-tight chamber space in the vessel isolated from the vacuum transferring chamber when the substrate arranging portion has moved to the vessel. The vacuum transferring chamber comprises therein a substrate transferring mechanism for transferring the substrates along transferring passages in the vacuum transferring chamber. The substrate arranging portion comprises a substrate lifter for moving the substrate between the transferring passages and the substrate arranging portion.
    • 一种真空处理装置,包括负载锁定室,真空传送室和处理室,分别具有用于抽空各个室的抽空系统。 负载锁定室具有用于隔离和打开负载锁定室与大气的连通的第一隔离阀和用于隔离和打开负载锁定室与真空传送室的连通的第二隔离阀。 处理室包括可拆卸地定位在形成在真空传送室的壁中的布置孔处的容器,并且从设备的外部以气密的方式封闭布置孔。 衬底布置部分布置在真空传送室中,以便朝向和远离容器移动,以在衬底布置部分移动到容器时与真空传送室隔离的容器中形成气密室空间。 真空传送室包括用于沿着真空传送室中的传送通道传送基板的基板传送机构。 基板布置部分包括用于在输送通道和基板布置部分之间移动基板的基板升降器。
    • 8. 发明授权
    • Plasma device comprising an intermediate electrode out of contact with a
high frequency electrode to induce electrostatic attraction
    • 等离子体装置包括与高频电极不接触以引起静电吸引的中间电极
    • US4399016A
    • 1983-08-16
    • US357216
    • 1982-03-11
    • Tsutomu TsukadaHideo Takei
    • Tsutomu TsukadaHideo Takei
    • H01L21/205C23C14/48C23C14/50H01J37/32H01L21/302H01L21/3065H01L21/31C23C15/00
    • H01J37/32431C23C14/50
    • In a support member for supporting a sample processed in a hollow space between first and second electrodes between which a high frequency a.c. voltage is supplied to produce plasma in the hollow space, a conductor is laid on the first electrode with a first dielectric layer interposed therebetween and is covered with a second dielectric layer to be attached to the sample. A d.c. voltage source is connected through the first dielectric layer out of contact with the first electrode to induce electrostatic attraction during production of the plasma and, thereby, to fixedly attach the sample to the second dielectric layer. A temperature control member is embedded in the first electrode to control a temperature of the sample. The control member may be a cooling member or a heater. A plurality of the support members may be located on the first electrode. Preferably, the first and the second dielectric layers are of epoxy resin and polyimide resin, respectively.
    • 在用于支撑处理在第一和第二电极之间的中空空间中的样品的支撑构件中,高频率交流 电压被提供以在中空空间中产生等离子体,导体放置在第一电极上,其间插入有第一介电层,并且被第二电介质层覆盖以附着到样品。 一个d.c. 电压源通过与第一电极不接触的第一介电层连接,以在制造等离子体期间引起静电吸引,从而将样品固定地附接到第二介电层。 温度控制部件嵌入第一电极中以控制样品的温度。 控制构件可以是冷却构件或加热器。 多个支撑构件可以位于第一电极上。 优选地,第一和第二电介质层分别是环氧树脂和聚酰亚胺树脂。