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1. 发明专利

JPS59182519A Manufacture of semiconductor thin film 失效
标题翻译：半导体薄膜的制造
公开(公告)号：JPS59182519A
公开(公告)日：1984-10-17
申请号：JP5501483
申请日：1983-04-01
申请人： Hitachi Ltd , Yasuo Tarui
发明人： SAITOU TADASHI , TARUI YASUO
IPC分类号： C23C16/24 , H01L21/205
CPC分类号： C23C16/24 , H01L21/02532 , H01L21/0262
摘要： PURPOSE:To manufacture a semiconductor film with excellent characteristics without being damaged by plasma or the like by a method wherein the mixing ratio of hydrogen and reactive gas and the total gas pressure are selected within a prescribed region. CONSTITUTION:An Si film is formed from monosilane gas under the existance of mercury atoms by ultraviolet rays. The monosilane gas is let flow while a substrate is heated to form the Si film on the substrate. The H2/SiH4mol ratio and the total gas pressure have large effect on the film quality of the obtained film and they must be selected within a proper region to form the Si film with the excellent film quaity. A dash-line A connecting the points 4-8 in the Figure shows the boundary of the region. If the total gas pressure and the H2/SiH4mol ratio are selected in the region above the dash-line A, an amorphous film containing crystal Si is obtained. However, when the H2/SiH4mol ratio exceeds approximately 10 , the forming speed of the film becomes extremely slow. Therefore, the H2/SiH4mol ratio is practically selected to be less than approximately 10 .
摘要翻译：目的：通过在规定区域内选择氢气和反应气体与总气体压力的混合比例的方法制造具有优异特性而不被等离子体等损坏的半导体膜。构成：通过紫外线在汞原子存在下由单硅烷气体形成Si膜。在加热衬底以在衬底上形成Si膜的同时使单硅烷气体流动。 H2 / SiH4mol比率和总气体压力对所得膜的膜质量具有很大的影响，并且必须在适当的区域内选择以形成具有优异膜厚度的Si膜。连接图中4-点的虚线A显示了该区域的边界。如果在虚线A上方的区域中选择总气体压力和H 2 / SiH 4摩尔比，则得到含有结晶Si的无定形膜。然而，当H 2 / SiH 4摩尔比超过约10 2时，膜的成形速度变得非常慢。因此，H2 / SiH4mol比实际上选择为小于约10 2。

2. 发明专利

JPS6156281A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156281A
公开(公告)日：1986-03-20
申请号：JP17587084
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , C23C16/50 , C23C16/511 , H01L21/205
CPC分类号： C23C16/482 , C23C16/24
摘要： PURPOSE:To form a uniform thin film having high quality at a substantially high speed on a substrate surface by radiating UV rays from plasma by high-frequency or microwave electric power and irradiating directly the photoreactive gas released near the substrate. CONSTITUTION:This film forming device has a plasma region where the plasma P is formed by gas discharge and a region where the substrate 4 imposed on a substrate holder 3 is disposed and the film is formed on the surface thereof in one vessel 5. The gas G1 for radiation of UV rays consisting of rare gas, hydrogen, heavy hydrogen or a gaseous mixture contg. these gases is supplied through an introducing hole 9 into the vessel 5 of the above-mentioned film forming device. Electrodes 1, 1 are provided in proximity to the supply region thereof and the high-frequency electric power is impressed thereto to form the above-mentioned plasma P and to radiate about
摘要翻译：目的：通过用高频或微波电力辐射来自等离子体的紫外线，在基板表面上以基本上高速度形成高品质的均匀薄膜，并直接照射在基板附近释放的光反应气体。构成：该成膜装置具有通过气体放电形成等离子体P的等离子体区域和设置在基板保持件3上的基板4的区域，并且在其一个容器5的表面上形成膜。气体用于辐射由稀有气体，氢气，重氢气体或气体混合物组成的紫外线的G1。这些气体通过导入孔9供给到上述成膜装置的容器5中。在其供电区域附近提供电极1,1，并且向其施加高频电力以形成上述等离子体P并辐射约<= 160nm的紫外线。另一方面，光反应气体G2 作为用于形成膜的原料的硅烷等通过环形管2从其孔径释放到靠近基板4的部分，并且将上述的紫外线直接照射在其上以对所述气体进行光电化。所得到的组合物的产物沉积在基板4上，由此形成Si等薄膜。

3. 发明专利

JPS6156280A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156280A
公开(公告)日：1986-03-20
申请号：JP17586984
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , H01L21/205
CPC分类号： C23C16/24 , C23C16/482
摘要： PURPOSE:To form a film of the resultant product of decomposition on a substrate surface at a practically high speed by forming a discharge gas such as rare gas to injection plasma, radiating UV rays thereon to irradiate the same on the photochemically reactive gas near the substrate to photodecompose said gas. CONSTITUTION:The discharge gas G1 for radiation of UV rays consisting of the rare gas, hydrogen, heavy hydrogen or the gaseous mixture composed thereof is formed to the injection plasma P by an electrode 2 for plasma jet to radiate about
摘要翻译：目的：通过形成诸如稀有气体之类的放电气体以注入等离子体，在基板表面上以实质高速度形成分解所得产物的膜，在其上辐射紫外线以将其照射在基板附近的光化学活性气体上以对所述气体进行光电化。构成：通过用于等离子体射流的电极2将由稀有气体，氢气，重氢或其组成的气体混合物组成的紫外线辐射用放电气体G1形成为注入等离子体P，以辐射约<= 160nm紫外线在容器1中设置有由LiF组成的窗口3的放电区域4。另一方面，施加在基座6上的基板7设置在具有由面向上述窗口3的LiF构成的窗口8的反应容器的中央，并且通过窗口3照射上述紫外线，以使其通过光化学活性气体G2，氢化合物例如Si和Ge，卤素等，其中所述气体在反应区域9中在基板7附近被光分解。所得到的分解产物沉积在基板7上，由此将a-Si膜等在其表面上快速形成。

4. 发明专利

JPS6156278A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156278A
公开(公告)日：1986-03-20
申请号：JP17586784
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Koichi Kamisako , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , KAMISAKO KOICHI , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , C23C16/511 , H01L21/205
CPC分类号： C23C16/24
摘要： PURPOSE:To form a thin Si film on a substrate at a practicable film forming speed by converting a discharge gas to plasma to rediate UV rays of a relatively short wavelength in a vessel having no blocks and irradiating directly the UV rays to silane, etc. to induce photochemical reaction. CONSTITUTION:The discharge gas such as rare gas, hydrogen or heavy hydrogen for radiation of UV rays is converted to the plasma by an electrode 2 to radiate the UV rays of =1mW/cm intensity in one vessel contg. a discharge region 1 where the above-mentioned discharge gas is supplied from a pipe 3 and a reaction region 7 where the substrate 6 is disposed on a substrate holding base 5 and silane or higher hydrogenated silicon is supplied alone or together with a carrier gas at >=1 SCCM flow rate without blocking said region. The photochemical reaction is thus induced by the direct irradiation of the above-mentioned UV rays to the silane, etc. by which the thin film of Si is formed on the substrate 6.
摘要翻译：目的：通过将放电气体转换为等离子体，在基板上以不会发生阻挡的容器中的紫外线变化，直接将紫外线直接照射到硅烷等上，以可切实的成膜速度在基板上形成薄的Si膜。诱导光化学反应。构成：用于辐射紫外线的诸如稀有气体，氢气或重氢的放电气体通过电极2转换成等离子体，以辐射<= 160nm波长的紫外线，并且等离子体的转换持续数秒，或以这样一种方式使得UV射线在一个容器中以> = 1mW / cm 2的强度到达衬底6。从管3和基板6配置在基板保持基体5上的反应区域7和硅烷或更高氢化硅的上述放电气体单独供给或与载气一起供给的放电区域1 > = 1 SCCM流速而不阻塞所述区域。因此，通过将上述紫外线直接照射到在基板6上形成Si薄膜的硅烷等而引起光化学反应。

5. 发明专利

JPS6156279A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156279A
公开(公告)日：1986-03-20
申请号：JP17586884
申请日：1984-08-25
申请人： Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , H01L21/205
CPC分类号： C23C16/482 , C23C16/24
摘要： PURPOSE:To form uniformly a thin film on a large substrate by controlling the electric power consumption of plural sets of counter electrodes for each of the sets to discharge electricity, converting a discharge gas to plasma, irradiating UV rays so as to arrive on the substrate and photodecomposing the photochemically reactive gas. CONSTITUTION:A discharge region 1 where the discharge gas such as rare gas supplied from a pipe 3 is converted to plasma by an electrode 2 and a reaction region 7 where the substrate 6 is disposed on a substrate holding base 5 and the photochemically reactive gas such as silane is supplied from a pipe 4 are enclosed by separate vessels or by one vessel without blocking said regions. The above-mentioned discharge gas is converted to the plasma in said vessel and the UV rays are radiated thereto to photodecompose the above-mentioned photochemically reactive gas. The resulted product of the decomposition is deposited on the above-mentioned substrate 6 by which the film formation is executed. The above-mentioned electrode 2 is constituted with plural sets of the electrode 2a, b... which are disposed to face each other and the above-mentioned plasma is formed by the bar-shaped discharge formed between the electrodes 2 in the stage of forming the film in the above-mentioned manner. The power consumption for the discharge of at least one set of electrode 2a is controlled by the power source separate from the other sets of the electrodes 2b..., by which the formation of the uniform film is made possible.
摘要翻译：目的：通过控制各组的多组对置电极的电力消耗，在大的基板上均匀地形成薄膜，将放电气体转换为等离子体，照射紫外线以便到达基板并光化学反应气体。构成：通过电极2和基板6配置在基板保持基座5上的反应区域7将从管3供给的稀有气体等放电气体转换成等离子体的放电区域1和光化学反应性气体因为从管4供应的硅烷由分开的容器或一个容器封闭，而不阻塞所述区域。将上述放电气体转换成所述容器中的等离子体，并且将紫外线照射到其上以对上述光化学反应性气体进行光电化。所得到的分解产物沉积在执行成膜的上述基板6上。上述电极2由多组彼此相对配置的电极2a，b ...构成，并且上述等离子体由形成在电极2之间的棒状放电形成在阶段以上述方式形成膜。用于排出至少一组电极2a的功率消耗由与电极2b ...的其它组分离的电源来控制，由此可以形成均匀的膜。

6. 发明专利

JPS59182579A Manufacture of semiconductor thin-film 失效
标题翻译：半导体薄膜的制造
公开(公告)号：JPS59182579A
公开(公告)日：1984-10-17
申请号：JP5501383
申请日：1983-04-01
申请人： Citizen Watch Co Ltd , Hitachi Ltd , Nippon Sanso Kk , Yasuo Tarui , Ushio Inc
发明人： SAITOU TADASHI , TARUI YASUO , TANMACHI KAZUAKI , FUJII KINJI , HIRAMOTO TATSUMI
IPC分类号： H01L31/0248 , H01L31/20
CPC分类号： H01L31/202 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To prevent the lowering of the quality of a thin-film consisting of Si, etc. by manufacturing the thin-film by irradiating a mixed gas containing a reaction gas such as SiH4 and mercury vapor with ultraviolet rays. CONSTITUTION:A glass substrate is heated, SiH4 gas is flowed, and an Si film is formed within the range of reaction-gas pressure of 0.1-100Torr by adjusting the flow rate of the gas and the displacement of a pump. Mercury atoms evaporating from a mercury vessel are made contain in a reaction atmosphere at that time. A glass pipe made of synthetic quartz increasing the transmittance of ultraviolet rays of 185nm is made contain in a lamp used. Consequently, the growth rate of the film takes a large value of approximately septuple as high as a value on the use of a lamp emitting ultraviolet rays only of 254nm at the same mercury-vessel temperature. The maximum value of the growth rate of the film is obtained at pressure close to approximately 1Torr of the gas, and a result better than the case only of 254nm can be acquired when a preferable gas pressure range extends over approximately 0.1-50Torr.
摘要翻译：目的：通过用紫外线照射含有SiH 4和汞蒸气的反应气体的混合气体来制造薄膜来防止由Si等构成的薄膜的质量的降低。构成：将玻璃基板加热，使SiH4气体流动，通过调节气体的流量和泵的位移，在反应气体压力为0.1〜100Torr的范围内形成Si膜。当时在反应气氛中含有从汞容器蒸发的汞原子。在使用的灯中包含由合成石英制成的玻璃管，其增加了185nm的紫外线的透射率。因此，膜的生长速率在相同的水银槽温度下使用仅发射254nm的紫外线的灯的值大约为近似的值。在接近大约1Torr的气体的压力下获得膜的生长速度的最大值，并且当优选的气体压力范围延伸大约0.1-50Torr时，可以获得比仅254nm的情况更好的结果。

7. 发明授权

US4046594A Solar battery 失效
公开(公告)号：US4046594A
公开(公告)日：1977-09-06
申请号：US670756
申请日：1976-03-26
申请人： Yasuo Tarui , Tsunenori Sakamoto , Yoshio Komiya
发明人： Yasuo Tarui , Tsunenori Sakamoto , Yoshio Komiya
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0236 , H01L31/068 , H01L31/0687 , H01L31/06
CPC分类号： H01L31/0687 , H01L31/0236 , H01L31/0475 , Y02E10/544 , Y10S148/02 , Y10S148/051 , Y10S148/072 , Y10S148/12 , Y10S438/965
摘要： Disclosed is a solar battery comprising a multi-layered "p-n" junction structure, which has a plurality of inwardly converging recesses to partially expose the inner "p-n" junctions to the sun light.

8. 发明授权

US6084260A Semiconductor storage device and method for manufacturing the same 失效
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US6084260A
公开(公告)日：2000-07-04
申请号：US999005
申请日：1997-12-29
申请人： Tadahiko Hirai , Yasuo Tarui
发明人： Tadahiko Hirai , Yasuo Tarui
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/76
CPC分类号： H01L21/31691 , H01L29/516 , H01L28/56
摘要： An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.
摘要翻译：在具有用于源极和漏极的区域的Si单晶衬底上层叠Si氧化物膜，取向的顺电氧化物薄膜和取向的铁电薄膜。导体薄膜形成在未被绝缘膜覆盖的部分中。作为晶体管的栅极，使用由Si氧化膜，取向的顺电氧化物薄膜和取向的铁电薄膜构成的层叠结构。 Si氧化膜用作载流子注入抑制层。

9. 发明授权

US4003632A Optoelectronic semiconductor device 失效
标题翻译：光电半导体器件
公开(公告)号：US4003632A
公开(公告)日：1977-01-18
申请号：US562134
申请日：1975-03-26
申请人： Yoshio Komiya , Eiichi Suzuki , Yasuo Tarui
发明人： Yoshio Komiya , Eiichi Suzuki , Yasuo Tarui
IPC分类号： G11C17/00 , G02B6/12 , G02F1/025 , G02F2/00 , G02F2/02 , G11C11/42 , G11C13/04 , G11C16/04 , H01L31/00 , H01L31/10 , G02F1/20 , G02B5/14 , H01L33/00
CPC分类号： G11C13/047 , G02F1/025
摘要： Disclosed is an optoelectronic semiconductor comprising a semiconductor substrate, a first insulating film covering the major surface of the semiconductor substrate and a second insulating film having electronic charge-storing means and lying on the first insulating film. When an optically guided wave is propagated to the first or second insulating film in the direction parallel to the major surface of the semiconductor substrate, an interaction is caused between the electronic charges stored in the charge-storing means and the optically guided wave, thereby allowing the optically guided wave to be modulated and the electronic charges to be released.
摘要翻译：公开了一种包括半导体衬底，覆盖半导体衬底的主表面的第一绝缘膜和位于第一绝缘膜上的具有电子电荷存储装置的第二绝缘膜的光电子半导体。当光导波沿着与半导体衬底的主表面平行的方向传播到第一或第二绝缘膜时，在存储在电荷存储装置中的电子电荷与光波导之间产生相互作用，由此允许要被调制的光波导和待释放的电子电荷。

10. 发明授权

US06885048B2 Transistor-type ferroelectric nonvolatile memory element 有权
标题翻译：晶体管型铁电非易失性存储元件
公开(公告)号：US06885048B2
公开(公告)日：2005-04-26
申请号：US09801990
申请日：2001-03-08
申请人： Yasuo Tarui , Kazuo Sakamaki
发明人： Yasuo Tarui , Kazuo Sakamaki
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11502 , H01L21/28291 , H01L28/55 , H01L29/78391
摘要： A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) structure and the MIS (metal-insulator-semiconductor) structure are stacked up and down on nearly the same area, and the lower MIS structure has means for increasing the effective area of the MIS capacitance. Means for increasing the effective area of the capacitor is a trench in the semiconductor substrate, ruggedness in the MIS structure or a MIN (metal-insulator-metal) structure.
摘要翻译：具有可以高度密集地集成的MFMIS（金属 - 铁电 - 金属 - 绝缘体 - 半导体）结构的晶体管型铁电非易失性存储元件。 MFMIS晶体管具有MFM（金属 - 铁电体 - 金属）结构和MIS（金属 - 绝缘体 - 半导体）结构在几乎相同的区域上下堆叠的结构，并且下部MIS结构具有用于增加有效面积的MIS电容。用于增加电容器的有效面积的手段是半导体衬底中的沟槽，MIS结构中的凹凸或MIN（金属 - 绝缘体 - 金属）结构。

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