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1. 发明授权

US6084260A Semiconductor storage device and method for manufacturing the same 失效
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US6084260A
公开(公告)日：2000-07-04
申请号：US999005
申请日：1997-12-29
申请人： Tadahiko Hirai , Yasuo Tarui
发明人： Tadahiko Hirai , Yasuo Tarui
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/76
CPC分类号： H01L21/31691 , H01L29/516 , H01L28/56
摘要： An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.
摘要翻译：在具有用于源极和漏极的区域的Si单晶衬底上层叠Si氧化物膜，取向的顺电氧化物薄膜和取向的铁电薄膜。导体薄膜形成在未被绝缘膜覆盖的部分中。作为晶体管的栅极，使用由Si氧化膜，取向的顺电氧化物薄膜和取向的铁电薄膜构成的层叠结构。 Si氧化膜用作载流子注入抑制层。

2. 发明授权

US5955755A Semiconductor storage device and method for manufacturing the same 失效
公开(公告)号：US5955755A
公开(公告)日：1999-09-21
申请号：US622343
申请日：1996-03-25
申请人： Tadahiko Hirai , Yasuo Tarui
发明人： Tadahiko Hirai , Yasuo Tarui
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/76
CPC分类号： H01L21/31691 , H01L29/516 , H01L28/56
摘要： An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.

3. 发明授权

US07696883B2 Resonance tag, method of reversibly changing resonance characteristics of resonance circuit, and capacitive element 失效
标题翻译：共振标签，可逆地改变谐振电路的谐振特性的方法以及电容元件
公开(公告)号：US07696883B2
公开(公告)日：2010-04-13
申请号：US11665483
申请日：2006-01-16
申请人： Takayuki Sumida , Tadahiko Hirai
发明人： Takayuki Sumida , Tadahiko Hirai
IPC分类号： G08B13/14
CPC分类号： H04B5/0012 , G08B13/242 , G08B13/2431 , G08B13/2457
摘要： In a resonance tag provided with a resonance circuit composed of a capacitive element and an inductive element, the capacitive element is characterized by having a condition under which the capacitance of the capacitive element is reversibly changed by a voltage applied to the resonance circuit and anther condition under which the capacitance of the capacitive element is irreversibly changed by another voltage applied to the resonance circuit.
摘要翻译：在设置有由电容元件和电感元件构成的谐振电路的谐振标签中，电容元件的特征在于具有这样的条件，在该条件下，电容元件的电容由施加到谐振电路的电压而可逆地改变，电容元件的电容在施加到谐振电路的另一电压下不可逆地改变。

4. 发明授权

US08043000B2 Resonance tag with temperature sensor 有权
标题翻译：共振标签带温度传感器
公开(公告)号：US08043000B2
公开(公告)日：2011-10-25
申请号：US12563993
申请日：2009-09-21
申请人： Takayuki Sumida , Tadahiko Hirai
发明人： Takayuki Sumida , Tadahiko Hirai
IPC分类号： G01K7/00 , G01K11/00 , G01K3/00
CPC分类号： G01K11/08 , G01K7/32
摘要： A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.
摘要翻译：温度历史传感器包括由至少电容器和线圈组成的谐振电路。温度历史传感器具有用于指示温度历史传感器的预定设定温度的显示。电容器在电容器的电极之间至少具有热熔融材料，并且热熔融材料的熔点处于设定温度的范围内。

5. 发明申请

US20100073265A1 ACTIVE-MATRIX DISPLAY AND DRIVE METHOD THEREOF 有权
标题翻译：主动矩阵显示及其驱动方法
公开(公告)号：US20100073265A1
公开(公告)日：2010-03-25
申请号：US12515680
申请日：2008-05-21
申请人： Tadahiko Hirai , Jun Sumioka , Kaoru Okamoto
发明人： Tadahiko Hirai , Jun Sumioka , Kaoru Okamoto
IPC分类号： G09G3/20
CPC分类号： G09G3/3283 , G09G3/3241 , G09G3/325 , G09G2300/0861 , G09G2310/0251 , G09G2320/0285 , G09G2320/043
摘要： An active-matrix display includes a data line, at least one select line, a control unit supplying a voltage signal and a current signal to the data line, and a pixel circuit receiving the voltage signal and the current signal from the data line to drive a light emitting element, the control unit including a voltage or first current source supplying a voltage or current pulse to the data line in order to make the voltage holding unit hold the voltage signal for making the light emitting element emit light having predetermined brightness in a first selection period in which the first switch is closed, a second current source supplying the current signal for making the light emitting element emit light having the predetermined brightness to the data line in a second selection period in which the first switch and the second switch are closed, a detection circuit detecting potential held in the voltage holding unit in the second selection period, and a correction unit correcting the voltage signal based on a relationship between the current signal and the detected potential.
摘要翻译：有源矩阵显示器包括数据线，至少一个选择线，向数据线提供电压信号和电流信号的控制单元，以及从数据线接收电压信号和电流信号以驱动的像素电路发光元件，所述控制单元包括向所述数据线提供电压或电流脉冲的电压或第一电流源，以使所述电压保持单元保持所述电压信号，以使得所述发光元件在所述发光元件中发射具有预定亮度的光第一开关闭合的第一选择期间，在第一开关和第二开关为止的第二选择期间，向第一开关供给用于使发光元件发光的电流信号的第二电流源向数据线发射关闭在第二选择期间保持在电压保持单元中的检测电路的检测电路和校正电压的校正单元基于当前信号与检测电位之间的关系的信号。

6. 发明授权

US07607829B2 Resonance tag with temperature sensor 失效
标题翻译：共振标签带温度传感器
公开(公告)号：US07607829B2
公开(公告)日：2009-10-27
申请号：US11945259
申请日：2007-11-26
申请人： Takayuki Sumida , Tadahiko Hirai
发明人： Takayuki Sumida , Tadahiko Hirai
IPC分类号： G01K7/00
CPC分类号： G01K11/08 , G01K7/32
摘要： A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.
摘要翻译：温度历史传感器包括由至少电容器和线圈组成的谐振电路。温度历史传感器具有用于指示温度历史传感器的预定设定温度的显示。电容器在电容器的电极之间至少具有热熔融材料，并且热熔融材料的熔点处于设定温度的范围内。

7. 发明申请

US20080297056A1 LIGHT EMITTING ELEMENT CIRCUIT AND DRIVE METHOD THEREOF 失效
标题翻译：发光元件电路及其驱动方法
公开(公告)号：US20080297056A1
公开(公告)日：2008-12-04
申请号：US12127124
申请日：2008-05-27
申请人： Tadahiko Hirai
发明人： Tadahiko Hirai
IPC分类号： G09G3/00 , G06F3/038
CPC分类号： G09G3/3241 , G09G2300/0408 , G09G2300/0842 , G09G2310/0262 , G09G2320/043
摘要： The present invention provides a light emitting element circuit that includes a current mirror circuit which includes two thin film transistors, two current input terminals and two output terminals, a capacitor for holding voltage corresponding to an electric current to be input from one of the two current input terminals, and a light emitting element connected to the current mirror circuit, and that supplies an electric current in accordance with the voltage held in the capacitor to the light emitting element through the current mirror circuit, wherein the two output terminals of the current mirror circuit are connected to the light emitting element, and the two current input terminals of the current mirror circuit are connected with each other through a switch in a time period other than a time period during which an electric current is input from the one of the two current input terminals.
摘要翻译：本发明提供了一种发光元件电路，其包括电流镜电路，其包括两个薄膜晶体管，两个电流输入端子和两个输出端子，用于保持对应于从两个电流之一输入的电流的电压的电容器输入端子和连接到电流镜电路的发光元件，并且通过电流镜电路将依照电容器中保持的电压的电流提供给发光元件，其中电流镜的两个输出端电路连接到发光元件，并且电流镜电路的两个电流输入端子通过开关在除二极管中的一个输入电流的时间段之外的时间段内彼此连接电流输入端子。

8. 发明授权

US07355879B2 Semiconductor integrated circuit, operating method thereof, and IC card including the circuit 失效
标题翻译：半导体集成电路，其操作方法以及包括该电路的IC卡
公开(公告)号：US07355879B2
公开(公告)日：2008-04-08
申请号：US10555964
申请日：2004-12-07
申请人： Tadahiko Hirai , Kikuzo Sawada
发明人： Tadahiko Hirai , Kikuzo Sawada
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C13/0014 , G11C17/16 , G11C17/165 , G11C2213/34 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/283
摘要： One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memory element is connected with a base line. A fixed resistor is connected between a connecting point between the other main electrode of the TFT and the bit line and an input terminal of the bit line. In information writing for changing the memory element whose initial state is a low impedance state to a high impedance state, voltages having polarities reverse relative to a reference voltage are applied to the input terminal of the bit line and an input terminal of the base line, respectively, so that a high voltage necessary to change the state is applied between both the terminals of the memory element.
摘要翻译： TFT的一个主电极与两端型非易失性存储元件的一个端子连接，TFT的栅电极与字线连接，而另一个主电极与位线连接。存储元件的另一个端子与基线连接。在TFT的另一个主电极和位线之间的连接点和位线的输入端子之间连接一个固定电阻器。在将初始状态为低阻抗状态的存储元件改变为高阻抗状态的信息写入中，具有相对于参考电压相反极性的电压被施加到位线的输入端和基线的输入端，从而在存储元件的两个端子之间施加改变状态所需的高电压。

9. 发明申请

US20060108416A1 Unauthorized access prevention method 审中-公开
标题翻译：未经授权的访问预防方法
公开(公告)号：US20060108416A1
公开(公告)日：2006-05-25
申请号：US10538037
申请日：2004-03-26
申请人： Tadahiko Hirai
发明人： Tadahiko Hirai
IPC分类号： G06K5/00 , G06K19/06
CPC分类号： G06K19/07363 , G06K19/073
摘要： An unauthorized access prevention method is provided for an integrated circuit including one or plural resistor elements capable of selecting between a high impedance state and a low impedance state irreversibly in an interface portion within the integrated circuit or a peripheral circuit portion. When a signal inconsistent with verification information and standard that are preset in the integrated circuit is received at least once, the impedance state of the resistor element is changed from an initial state to stop a part or all of accesses to the integrated circuit irreversibly. The unauthorized access prevention method is thus implemented by a simple structure manufactured with ease and at low cost.
摘要翻译：提供了一种用于集成电路的未经授权的访问防止方法，该集成电路包括能够在集成电路或外围电路部分中的接口部分中不可逆地在高阻抗状态和低阻抗状态之间选择的一个或多个电阻器元件。当至少接收到与集成电路中预设的验证信息和标准不一致的信号时，电阻元件的阻抗状态从初始状态改变，以不可逆地停止对集成电路的部分或全部访问。因此，通过以简单且低成本制造的简单结构来实现未授权的访问防止方法。

10. 发明授权

US06724651B2 Nonvolatile solid-state memory and method of driving the same 失效
标题翻译：非易失性固态存储器及其驱动方法
公开(公告)号：US06724651B2
公开(公告)日：2004-04-20
申请号：US10112722
申请日：2002-04-02
申请人： Tadahiko Hirai
发明人： Tadahiko Hirai
IPC分类号： G11C1100
CPC分类号： G11C11/15
摘要： The present invention is aimed at decreasing the current required for writing in a magnetic random access memory (MRAM), and power consumption thereof. In a magnetic random access memory of the present invention, information is written in memory elements arranged in a same row or column by performing once each of the first information writing step of applying a first magnetic field to put memory elements in the high-resistance state, and the second information writing step of applying a second magnetic field to the memory elements in which the first information has not been written to write information in all memory elements in the same row under recording of information. Alternatively, a magnetic random access memory includes a plurality of first wirings for applying a magnetic field in the direction of the easy magnetization axis of a magnetic layer, and a plurality of second wirings for applying a magnetic field in a direction inclined from the direction of the easy magnetization axis of the magnetic layer, wherein a current is passed through one of the second wirings to apply a magnetic field to all memory elements arranged in a same row or column of the rows or columns of a plurality of the memory cells arranged in parallel to the second wirings, and currents are passed through the plurality of first wirings in directions according to the information to be recorded in the respective memory elements synchronously with the current pulse passed through the second wiring to apply a magnetic field to each of the magnetoresistive elements, thereby recording information on the plurality of memory elements arranged in the same row or column.
摘要翻译：本发明旨在降低在磁随机存取存储器（MRAM）中写入所需的电流及其功耗。在本发明的磁随机存取存储器中，通过执行第一信息写入步骤中的每一个，将信息写入到排列在同一行或列中的存储器元件中，以将第一磁场施加到高电阻状态以及第二信息写入步骤，在记录信息的同一行的所有存储元件中，向尚未写入第一信息的存储元件施加第二磁场以写入信息。或者，磁性随机存取存储器包括用于在磁性层的容易磁化轴方向上施加磁场的多个第一布线，以及多个第二布线，用于沿着从磁性层的方向倾斜的方向施加磁场磁性层的容易的磁化轴，其中电流通过第二布线中的一个，以将布置在多个存储单元的行或列的同一行或列中的所有存储器元件施加磁场平行于第二布线，并且电流根据要记录在各个存储元件中的信息的方向通过多个第一布线，与通过第二布线的电流脉冲同步，以向每个磁阻施加磁场从而在布置在同一行或列中的多个存储元件上记录信息。

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