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1. 发明专利

JPS59182579A Manufacture of semiconductor thin-film 失效
标题翻译：半导体薄膜的制造
公开(公告)号：JPS59182579A
公开(公告)日：1984-10-17
申请号：JP5501383
申请日：1983-04-01
申请人： Citizen Watch Co Ltd , Hitachi Ltd , Nippon Sanso Kk , Yasuo Tarui , Ushio Inc
发明人： SAITOU TADASHI , TARUI YASUO , TANMACHI KAZUAKI , FUJII KINJI , HIRAMOTO TATSUMI
IPC分类号： H01L31/0248 , H01L31/20
CPC分类号： H01L31/202 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To prevent the lowering of the quality of a thin-film consisting of Si, etc. by manufacturing the thin-film by irradiating a mixed gas containing a reaction gas such as SiH4 and mercury vapor with ultraviolet rays. CONSTITUTION:A glass substrate is heated, SiH4 gas is flowed, and an Si film is formed within the range of reaction-gas pressure of 0.1-100Torr by adjusting the flow rate of the gas and the displacement of a pump. Mercury atoms evaporating from a mercury vessel are made contain in a reaction atmosphere at that time. A glass pipe made of synthetic quartz increasing the transmittance of ultraviolet rays of 185nm is made contain in a lamp used. Consequently, the growth rate of the film takes a large value of approximately septuple as high as a value on the use of a lamp emitting ultraviolet rays only of 254nm at the same mercury-vessel temperature. The maximum value of the growth rate of the film is obtained at pressure close to approximately 1Torr of the gas, and a result better than the case only of 254nm can be acquired when a preferable gas pressure range extends over approximately 0.1-50Torr.
摘要翻译：目的：通过用紫外线照射含有SiH 4和汞蒸气的反应气体的混合气体来制造薄膜来防止由Si等构成的薄膜的质量的降低。构成：将玻璃基板加热，使SiH4气体流动，通过调节气体的流量和泵的位移，在反应气体压力为0.1〜100Torr的范围内形成Si膜。当时在反应气氛中含有从汞容器蒸发的汞原子。在使用的灯中包含由合成石英制成的玻璃管，其增加了185nm的紫外线的透射率。因此，膜的生长速率在相同的水银槽温度下使用仅发射254nm的紫外线的灯的值大约为近似的值。在接近大约1Torr的气体的压力下获得膜的生长速度的最大值，并且当优选的气体压力范围延伸大约0.1-50Torr时，可以获得比仅254nm的情况更好的结果。

2. 发明专利

JPS6156281A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156281A
公开(公告)日：1986-03-20
申请号：JP17587084
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , C23C16/50 , C23C16/511 , H01L21/205
CPC分类号： C23C16/482 , C23C16/24
摘要： PURPOSE:To form a uniform thin film having high quality at a substantially high speed on a substrate surface by radiating UV rays from plasma by high-frequency or microwave electric power and irradiating directly the photoreactive gas released near the substrate. CONSTITUTION:This film forming device has a plasma region where the plasma P is formed by gas discharge and a region where the substrate 4 imposed on a substrate holder 3 is disposed and the film is formed on the surface thereof in one vessel 5. The gas G1 for radiation of UV rays consisting of rare gas, hydrogen, heavy hydrogen or a gaseous mixture contg. these gases is supplied through an introducing hole 9 into the vessel 5 of the above-mentioned film forming device. Electrodes 1, 1 are provided in proximity to the supply region thereof and the high-frequency electric power is impressed thereto to form the above-mentioned plasma P and to radiate about
摘要翻译：目的：通过用高频或微波电力辐射来自等离子体的紫外线，在基板表面上以基本上高速度形成高品质的均匀薄膜，并直接照射在基板附近释放的光反应气体。构成：该成膜装置具有通过气体放电形成等离子体P的等离子体区域和设置在基板保持件3上的基板4的区域，并且在其一个容器5的表面上形成膜。气体用于辐射由稀有气体，氢气，重氢气体或气体混合物组成的紫外线的G1。这些气体通过导入孔9供给到上述成膜装置的容器5中。在其供电区域附近提供电极1,1，并且向其施加高频电力以形成上述等离子体P并辐射约<= 160nm的紫外线。另一方面，光反应气体G2 作为用于形成膜的原料的硅烷等通过环形管2从其孔径释放到靠近基板4的部分，并且将上述的紫外线直接照射在其上以对所述气体进行光电化。所得到的组合物的产物沉积在基板4上，由此形成Si等薄膜。

3. 发明专利

JPS6156280A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156280A
公开(公告)日：1986-03-20
申请号：JP17586984
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , H01L21/205
CPC分类号： C23C16/24 , C23C16/482
摘要： PURPOSE:To form a film of the resultant product of decomposition on a substrate surface at a practically high speed by forming a discharge gas such as rare gas to injection plasma, radiating UV rays thereon to irradiate the same on the photochemically reactive gas near the substrate to photodecompose said gas. CONSTITUTION:The discharge gas G1 for radiation of UV rays consisting of the rare gas, hydrogen, heavy hydrogen or the gaseous mixture composed thereof is formed to the injection plasma P by an electrode 2 for plasma jet to radiate about
摘要翻译：目的：通过形成诸如稀有气体之类的放电气体以注入等离子体，在基板表面上以实质高速度形成分解所得产物的膜，在其上辐射紫外线以将其照射在基板附近的光化学活性气体上以对所述气体进行光电化。构成：通过用于等离子体射流的电极2将由稀有气体，氢气，重氢或其组成的气体混合物组成的紫外线辐射用放电气体G1形成为注入等离子体P，以辐射约<= 160nm紫外线在容器1中设置有由LiF组成的窗口3的放电区域4。另一方面，施加在基座6上的基板7设置在具有由面向上述窗口3的LiF构成的窗口8的反应容器的中央，并且通过窗口3照射上述紫外线，以使其通过光化学活性气体G2，氢化合物例如Si和Ge，卤素等，其中所述气体在反应区域9中在基板7附近被光分解。所得到的分解产物沉积在基板7上，由此将a-Si膜等在其表面上快速形成。

4. 发明专利

JPS6156278A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156278A
公开(公告)日：1986-03-20
申请号：JP17586784
申请日：1984-08-25
申请人： Citizen Watch Co Ltd , Koichi Kamisako , Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , KAMISAKO KOICHI , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , C23C16/511 , H01L21/205
CPC分类号： C23C16/24
摘要： PURPOSE:To form a thin Si film on a substrate at a practicable film forming speed by converting a discharge gas to plasma to rediate UV rays of a relatively short wavelength in a vessel having no blocks and irradiating directly the UV rays to silane, etc. to induce photochemical reaction. CONSTITUTION:The discharge gas such as rare gas, hydrogen or heavy hydrogen for radiation of UV rays is converted to the plasma by an electrode 2 to radiate the UV rays of =1mW/cm intensity in one vessel contg. a discharge region 1 where the above-mentioned discharge gas is supplied from a pipe 3 and a reaction region 7 where the substrate 6 is disposed on a substrate holding base 5 and silane or higher hydrogenated silicon is supplied alone or together with a carrier gas at >=1 SCCM flow rate without blocking said region. The photochemical reaction is thus induced by the direct irradiation of the above-mentioned UV rays to the silane, etc. by which the thin film of Si is formed on the substrate 6.
摘要翻译：目的：通过将放电气体转换为等离子体，在基板上以不会发生阻挡的容器中的紫外线变化，直接将紫外线直接照射到硅烷等上，以可切实的成膜速度在基板上形成薄的Si膜。诱导光化学反应。构成：用于辐射紫外线的诸如稀有气体，氢气或重氢的放电气体通过电极2转换成等离子体，以辐射<= 160nm波长的紫外线，并且等离子体的转换持续数秒，或以这样一种方式使得UV射线在一个容器中以> = 1mW / cm 2的强度到达衬底6。从管3和基板6配置在基板保持基体5上的反应区域7和硅烷或更高氢化硅的上述放电气体单独供给或与载气一起供给的放电区域1 > = 1 SCCM流速而不阻塞所述区域。因此，通过将上述紫外线直接照射到在基板6上形成Si薄膜的硅烷等而引起光化学反应。

5. 发明专利

JPS6156279A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS6156279A
公开(公告)日：1986-03-20
申请号：JP17586884
申请日：1984-08-25
申请人： Yasuo Tarui , Ushio Inc
发明人： TARUI YASUO , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , H01L21/205
CPC分类号： C23C16/482 , C23C16/24
摘要： PURPOSE:To form uniformly a thin film on a large substrate by controlling the electric power consumption of plural sets of counter electrodes for each of the sets to discharge electricity, converting a discharge gas to plasma, irradiating UV rays so as to arrive on the substrate and photodecomposing the photochemically reactive gas. CONSTITUTION:A discharge region 1 where the discharge gas such as rare gas supplied from a pipe 3 is converted to plasma by an electrode 2 and a reaction region 7 where the substrate 6 is disposed on a substrate holding base 5 and the photochemically reactive gas such as silane is supplied from a pipe 4 are enclosed by separate vessels or by one vessel without blocking said regions. The above-mentioned discharge gas is converted to the plasma in said vessel and the UV rays are radiated thereto to photodecompose the above-mentioned photochemically reactive gas. The resulted product of the decomposition is deposited on the above-mentioned substrate 6 by which the film formation is executed. The above-mentioned electrode 2 is constituted with plural sets of the electrode 2a, b... which are disposed to face each other and the above-mentioned plasma is formed by the bar-shaped discharge formed between the electrodes 2 in the stage of forming the film in the above-mentioned manner. The power consumption for the discharge of at least one set of electrode 2a is controlled by the power source separate from the other sets of the electrodes 2b..., by which the formation of the uniform film is made possible.
摘要翻译：目的：通过控制各组的多组对置电极的电力消耗，在大的基板上均匀地形成薄膜，将放电气体转换为等离子体，照射紫外线以便到达基板并光化学反应气体。构成：通过电极2和基板6配置在基板保持基座5上的反应区域7将从管3供给的稀有气体等放电气体转换成等离子体的放电区域1和光化学反应性气体因为从管4供应的硅烷由分开的容器或一个容器封闭，而不阻塞所述区域。将上述放电气体转换成所述容器中的等离子体，并且将紫外线照射到其上以对上述光化学反应性气体进行光电化。所得到的分解产物沉积在执行成膜的上述基板6上。上述电极2由多组彼此相对配置的电极2a，b ...构成，并且上述等离子体由形成在电极2之间的棒状放电形成在阶段以上述方式形成膜。用于排出至少一组电极2a的功率消耗由与电极2b ...的其它组分离的电源来控制，由此可以形成均匀的膜。

6. 发明专利

JPH0563552B2 失效
公开(公告)号：JPH0563552B2
公开(公告)日：1993-09-10
申请号：JP17586984
申请日：1984-08-25
申请人： TARUI YASUO , CITIZEN WATCH CO LTD , USHIO ELECTRIC INC
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： C23C16/24 , C23C16/48 , H01L21/205

7. 发明专利

JPS61186476A PHOTOCHEMICAL REACTION DEVICE 失效
公开(公告)号：JPS61186476A
公开(公告)日：1986-08-20
申请号：JP2513985
申请日：1985-02-14
申请人： TARUI YASUO , CITIZEN WATCH CO LTD , USHIO ELECTRIC INC
发明人： TARUI YASUO , AOTA KATSUMI , HIRAMOTO TATSUMI
IPC分类号： B01J19/12 , C23C16/48 , G03G5/08
摘要： PURPOSE:To prevent the deposition of the reactant on a plate-shaped body by segmenting the inside of a vessel to a light source chamber and substrate chamber and ejecting a photoreactive inert gas introduced into the light source chamber through the holes of the gas permeable and UV transmittable plate- shaped body into the substrate chamber. CONSTITUTION:The inside of the chamber 1 is segmented to the substrate chamber 1a and the light source 1b by the gas permeable and UV transmittable perforated plate 5. The photoreactive inert gas such as Ar is introduced into the chamber 1b where the gas is used as a discharge gas. The photoreactive gas such as silane gas is introduced into the substrate chamber 1a. The stable photochemical vapor growth is made possible without deposition of amorphous silicon on the plate 5 and without hindering the transmission of UV rays even after the long-term operation according to the above-mentioned method.

8. 发明专利

JP2008098022A Double tube type rare gas discharge lamp 审中-公开
标题翻译：双管型稀有气体放电灯
公开(公告)号：JP2008098022A
公开(公告)日：2008-04-24
申请号：JP2006279608
申请日：2006-10-13
申请人： Ushio Inc , ウシオ電機株式会社
发明人： FUNAKOSHI MITSUO , HIRAMOTO TATSUMI , TAGAWA KOJI
IPC分类号： H01J65/00 , H01J61/34
摘要： PROBLEM TO BE SOLVED: To provide a rare gas discharge lamp enabled to sterilize or inhibit proliferation of bacteria in a low-temperature place, by irradiating not only visible light for illumination but also ultraviolet rays outside the tube body contributing to sterilization, in case of use at a low-temperature place such as in a refrigeration showcase, a refrigerator and a freezer. SOLUTION: The double tube type rare gas discharge lamp has a rare gas discharge tube provided with a phosphor layer at a part of an inner face of the tube body made of a dielectric material transmitting vacuum ultraviolet rays, and a plurality of electrodes nearly over a whole length of the tube body along a tube axis direction of an outside face of the tube body, made up by sealing xenon gas or rare gas mainly composed of xenon gas inside the tube body covered with an outer cylinder tube made of a dielectric material transmitting vacuum ultraviolet rays, with either end of the outer cylinder tube airtightly sealed, the inside of the outer cylinder tube in an atmosphere transmitting vacuum ultraviolet rays, and the vacuum ultraviolet rays and the visible light irradiated at the same time from the outer cylinder tube. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够消除或抑制细菌在低温场所的增殖的稀有气体放电灯，通过照射不仅可见光照射而且照射有助于灭菌的管体外的紫外线，在诸如制冷陈列柜，冰箱和冷冻室的低温场合使用的情况。解决方案：双管式稀有气体放电灯具有在透射真空紫外线的介电材料制成的管体的内表面的一部分处设置有荧光体层的稀有气体放电管，以及多个电极几乎在管体的整个长度上沿着管体的外表面的管轴方向，通过将由氙气体或主要由氙气主要组成的稀有气体密封在管体内部，该管体由覆盖有由传输真空紫外线的介质材料，外筒管的任一端气密密封，外筒管内部在透射真空紫外线的气氛中，真空紫外线和可见光从外部同时照射气缸管。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006237288A Extreme ultra-violet ray light emitting device 审中-公开
标题翻译：极光超紫外线发光装置
公开(公告)号：JP2006237288A
公开(公告)日：2006-09-07
申请号：JP2005050074
申请日：2005-02-25
申请人： Ushio Inc , ウシオ電機株式会社
发明人： HOTTA KAZUAKI , HIRAMOTO TATSUMI
IPC分类号： H01L21/027 , G03F7/20 , G21K5/02 , G21K5/08 , H05G2/00
摘要： PROBLEM TO BE SOLVED: To provide an extreme ultra-violet ray light emitting device which gains an extreme ultra-violet ray from Sn ions and uses SnH
4 without problems on safety and dissolution.
SOLUTION: The extreme ultra-violet light emitting device 1 is provided with a mono-stannane synthesizer 2. In the mono-stannane synthesizer 2, an SnH
4 is synthesized from a material of a material container 3 by a mono-stannane synthesizing apparatus 4, and the SnH
4 gas is supplied to a liquefaction stannane container 5. The SnH
4 gas is liquefied by the liquefaction stannane container 5, and it is stored therein. The SnH
4 stored in the liquefaction stannane container 5 is supplied to a plasma generation part 6, and it is changed to plasma by laser or electric discharging, resulting in generating an extreme ultra-violet ray of 13.5 nm from Sn ions. In addition, a plurality of liquefaction stannane containers are provided, and supply and liquefaction storage operations are alternately repeated therein, thereby continuously obtaining light emission of extreme ultra-violet ray from Sn ions for a long time.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种从Sn离子获得极紫外线并使用SnH 4 的极紫外线发光装置，在安全性和溶解性上没有任何问题。解决方案：极紫外发光器件1具有单锡烷合成器2.在单锡烷合成器2中，由材料的材料合成SnH 4 容器3通过单锡烷合成装置4，并且SnH 4 气体被供给到液化锡烷容器5.SHH 4 SB 4气体被液化锡烷容器 5，并存储在其中。储存在液化锡烷容器5中的SnH 4 供给等离子体生成部6，通过激光或电放电而变为等离子体，产生13.5nm的极紫外线来自Sn离子。此外，设置多个液化锡烷容器，并且供应和液化储存操作在其中交替重复，从而长时间连续地从Sn离子获得极紫外线的发光。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2003346710A Flash lamp device and flash light emitting device 有权
标题翻译：闪光灯装置和闪光灯发光装置
公开(公告)号：JP2003346710A
公开(公告)日：2003-12-05
申请号：JP2002148014
申请日：2002-05-22
申请人： Ushio Inc , ウシオ電機株式会社
发明人： HIRAMOTO TATSUMI
IPC分类号： H05B41/32 , H01J17/20 , H01J61/16 , H01J61/20 , H01J61/52 , H01J61/80 , H05B39/00
CPC分类号： H01J61/20 , H01J61/52 , H01J61/54 , H01J61/80
摘要： PROBLEM TO BE SOLVED: To provide a flash lamp device with long life, capable of obtaining high emission efficiency, and to provide a flash light emitting device with small size having excellent flash light emitting property. SOLUTION: The flash lamp device has a flash lamp having an envelope for discharge, in which mercury is enclosed, and a preliminary heating means for preliminarily heating the flash lamp. The quantity of mercury enclosed in the flash lamp is 0.2-55 mg/cm 3 , and the flash lamp is characterized by lighting under specified condition. The flash light emitting device uses the above flash lamp as a light source. COPYRIGHT: (C)2004,JPO

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