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    • 5. 发明授权
    • Projection exposure apparatus and method of correcting projection error
    • 投影曝光装置和校正投影误差的方法
    • US4958160A
    • 1990-09-18
    • US238196
    • 1988-08-30
    • Yasuaki ItoTakehiko SuzukiHirokazu Shimeki
    • Yasuaki ItoTakehiko SuzukiHirokazu Shimeki
    • G03F7/20
    • G03F7/70691G03F7/70358
    • A projection exposure apparatus in which a wafer is illuminated with a light of slit-like shape from a mask and a carriage for supporting the mask and the wafer as a unit is moved in a predetermined direction relative to a projection optical system, including a mirror system, wherein a pattern formed on the mask is printed on the wafer, is disclosed. By adjusting the attitude of the carriage during movement, a projection error of the pattern of the mask, being projected on the wafer, is corrected. Data necessary for adjusting the carriage attitude is obtained by photoelectrically detecting alignment marks of the mask and the wafer. As a feature, a setting device is provided to allow the setting of the number of wafers, of those of a predetermined number, which are to be treated as the subject of data detection. This makes the apparatus to easily meet either of the requirements of higher precision and higher throughput, as desired. Also, the amount of actual change in the attitude of the carriage, with respect to the instruction value based on the data, is preparatorily detected before the pattern printing and is memorized. This assures higher precision correction of the projection error.
    • 投影曝光装置,其中以掩模和狭缝状的光照射晶片作为一个单元的投影光学系统相对于包括镜子的投影光学系统在预定的方向上移动 系统,其中形成在掩模上的图案被印刷在晶片上。 通过在移动期间调整滑架的姿态,校正投影在晶片上的掩模图案的投影误差。 通过光电检测掩模和晶片的对准标记来获得调整滑架姿态所需的数据。 作为特征,提供了一种设置装置,以允许设置要被视为数据检测对象的预定数量的晶片数量。 这使得装置能够根据需要容易地满足更高精度和更高产量的要求。 此外,在图案打印之前,预先检测出基于数据的托架姿态的实际变化量,并且被记忆。 这样可以更精确地校正投影误差。