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1. 发明专利

IL179695A METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 未知
公开(公告)号：IL179695A
公开(公告)日：2011-08-31
申请号：IL17969506
申请日：2006-11-29
申请人： LAM RES CORP , WILCOXSON MARK HENRY , SADJADI REZA , HUDSON ERIC A , TIETZ JAMES V , YUN SEOKMIN , ZHU JI , CIRIGLIANO PETER , LEE SANGHEON , CHOI THOMAS S , LOEWENHARDT PETER
发明人： WILCOXSON MARK HENRY , SADJADI REZA , HUDSON ERIC A , TIETZ JAMES V , YUN SEOKMIN , ZHU JI , CIRIGLIANO PETER , LEE SANGHEON , CHOI THOMAS S , LOEWENHARDT PETER
IPC分类号： G03F7/42 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

2. 发明专利

IL179695D0 METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 未知
公开(公告)号：IL179695D0
公开(公告)日：2007-05-15
申请号：IL17969506
申请日：2006-11-29
申请人： LAM RES CORP , MARK HENRY WILCOXSON , SADJADI S M REZA , ERIC A HUDSON , JAMES V TIETZ , YUN SEOKMIN , ZHU JI , CIRIGLIANO PETER , LEE SANGHEON , CHOI THOMAS S , LOEWENHARDT PETER
IPC分类号： G03F7/42 , H01L20100101 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

3. 发明申请

WO2009151656A2 METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
标题翻译：电介质膜处理方法
公开(公告)号：WO2009151656A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/035030
申请日：2009-02-24
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
发明人： YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

4. 发明申请

WO2006088713A2 ENHANCED WAFER CLEANING METHOD 审中-公开
标题翻译：增强清洗方法
公开(公告)号：WO2006088713A2
公开(公告)日：2006-08-24
申请号：PCT/US2006004504
申请日：2006-02-08
申请人： LAM RES CORP , YUN SEOKMIN , BOYD JOHN M , WILCOXSON MARK , DE LARIOS JOHN
发明人： YUN SEOKMIN , BOYD JOHN M , WILCOXSON MARK , DE LARIOS JOHN
IPC分类号： C23G1/00 , B08B3/00 , B08B3/10 , B08B3/12 , H01L21/00
CPC分类号： H01L21/67028 , C23G1/00 , H01L21/67034 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
摘要翻译：提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。该方法通过向设置在基板上的接近头部提供第一加热流体而开始。然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。基板在邻近头部下线性移动。还提供单个晶片清洁系统。

5. 发明申请

WO2012056343A2 METHOD AND APPARATUS FOR DRYING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于干燥半导体波长的方法和装置
公开(公告)号：WO2012056343A2
公开(公告)日：2012-05-03
申请号：PCT/IB2011/054386
申请日：2011-10-05
申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION , YUN, Seokmin , KWON, Hancheol , WULZ, Gerhard , KOVACS, Frederic
发明人： YUN, Seokmin , KWON, Hancheol , WULZ, Gerhard , KOVACS, Frederic
IPC分类号： B08B3/00
CPC分类号： H01L21/67034
摘要： 4303-1043 22 ABSTRACT OF THE DISCLOSURE A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60°C and below 82°C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer sideand by evaporating the hot IPA from the wafer surface using heated nitrogen gas.
摘要翻译： 4303-1043 22本发明摘要用于干燥半导体晶片的方法和装置在高于60℃和低于82℃的温度下使用液态的热异丙醇。使用热IPA更好地避免了模式崩溃，并允许减少IPA的消耗。可以通过将热去离子水施加到相对的晶片侧并通过使用加热的氮气从晶片表面蒸发热的IPA来保持晶片温度。

6. 发明申请

WO2011094132A3 METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
标题翻译：在高纵横比纳米结构中减少图案塌陷的方法
公开(公告)号：WO2011094132A3
公开(公告)日：2011-08-04
申请号：PCT/US2011/022075
申请日：2011-01-21
申请人： LAM RESEARCH CORPORATION , YASSERI, Amir A. , ZHU, Ji , YUN, Seokmin , MUI, David S.L. , MIKHAYLICHENKO, Katrina
发明人： YASSERI, Amir A. , ZHU, Ji , YUN, Seokmin , MUI, David S.L. , MIKHAYLICHENKO, Katrina
IPC分类号： H01L21/302
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构的表面的方法，以在制造半导体器件所涉及的一些严格处理期间帮助保护精细的纳米结构。处理包含高纵横比纳米结构的晶片以使纳米结构的表面更加疏水。该处理可以包括应用底漆，该底漆化学改变纳米结构的表面，防止其在随后的湿法清洁过程期间被损坏。然后可以进一步处理晶片，例如湿法清洁过程，然后进行干燥过程。纳米结构的疏水性增加有助于减少或防止纳米结构的塌陷。

7. 发明申请

WO2008103223A1 METHOD OF LOW-K DIELECTRIC FILM REPAIR 审中-公开
标题翻译：低K电介质膜修复方法
公开(公告)号：WO2008103223A1
公开(公告)日：2008-08-28
申请号：PCT/US2008/001058
申请日：2008-01-24
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
发明人： YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
IPC分类号： H01L21/3105
CPC分类号： H01L21/02359 , C23C16/401 , C23C16/45563 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/67046 , H01L21/6715 , H01L21/76831
摘要： An apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.
摘要翻译：用于修复低k电介质膜层中的碳缺乏的低k材料的装置，系统和方法包括鉴定具有烃基的修复化学物质，修复化学物质被配置为修复耗尽碳的低k材料并应用所识别的将化学半月板修复到低k电介质膜层，使得低k电介质膜层中的碳缺乏的低k材料充分暴露于修复化学半月板基本上修复低k材料。修复的低k材料表现出低k电介质膜层的基本上相当的低k电介质特性。

8. 发明申请

WO2012056343A3 METHOD AND APPARATUS FOR DRYING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于干燥半导体波长的方法和装置
公开(公告)号：WO2012056343A3
公开(公告)日：2012-07-05
申请号：PCT/IB2011054386
申请日：2011-10-05
申请人： LAM RES AG , LAM RES CORP , YUN SEOKMIN , KWON HANCHEOL , WULZ GERHARD , KOVACS FREDERIC
发明人： YUN SEOKMIN , KWON HANCHEOL , WULZ GERHARD , KOVACS FREDERIC
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67034
摘要： A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60°C and below 82°C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer sideand by evaporating the hot IPA from the wafer surface using heated nitrogen gas.
摘要翻译：用于干燥半导体晶片的方法和设备在高于60℃和低于82℃的温度下使用液体形式的热异丙醇。使用热IPA更好地避免了模式崩溃，并允许减少IPA的消耗。可以通过将热去离子水施加到相对的晶片侧并通过使用加热的氮气从晶片表面蒸发热的IPA来保持晶片温度。

9. 发明申请

WO2009008958A2 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
标题翻译：去除聚合物残余物后的方法
公开(公告)号：WO2009008958A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/007759
申请日：2008-06-20
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
发明人： YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底表面除去蚀刻后聚合物残余物的系统和方法包括识别用于从衬底表面去除蚀刻后聚合物残余物的干式快速化学物质。干闪光化学品被配置为选择性地去除在通过低k电介质膜层形成特征的区域中由蚀刻操作留下的蚀刻后聚合物残留物。使用短闪速工艺来施加所识别的干闪光化学品，以去除至少一部分蚀刻后聚合物残余物，同时最小化对介电膜层的损害。然后将湿清洁化学物质施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短闪过程留下的剩余蚀刻后聚合物残留物。

10. 发明申请

WO2011094132A2 METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
标题翻译：降低高比例纳米结构中图案褶皱的方法
公开(公告)号：WO2011094132A2
公开(公告)日：2011-08-04
申请号：PCT/US2011022075
申请日：2011-01-21
申请人： LAM RES CORP , YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
发明人： YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
IPC分类号： H01L21/302
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在制造半导体器件的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，以防止它们在随后的湿清洁过程中被损坏。然后可以进一步处理晶片，例如湿法清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

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