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1. 发明申请

WO2011072279A1 SYSTEM AND METHOD OF PREVENTING PATTERN COLLAPSE USING LOW SURFACE TENSION FLUID 审中-公开
标题翻译：使用低表面张力流体防止图案褶皱的系统和方法
公开(公告)号：WO2011072279A1
公开(公告)日：2011-06-16
申请号：PCT/US2010/060023
申请日：2010-12-13
申请人： LAM RESEARCH CORPORATION , MIKHAYLICHENKO, Katrina , SYOMIN, Denis , WILCOXSON, Mark
发明人： MIKHAYLICHENKO, Katrina , SYOMIN, Denis , WILCOXSON, Mark
IPC分类号： B08B3/04
CPC分类号： H01L21/02057
摘要： A system for processing a wafer with a low surface tension liquid includes a low surface tension liquid source including a first heat source capable of heating the low surface tension liquid to not more than 25 degrees C less than boiling point of the low surface tension liquid, a delivery mechanism for delivering the heated low surface tension liquid to an air/liquid interface region and a second heat source directed toward the air/liquid interface region, the second heat source capable of heating the air/liquid interface region to at least 2 degrees C greater than the boiling point of the low surface tension liquid. A method for processing a wafer with a low surface tension liquid is also described.
摘要翻译：用于处理具有低表面张力液体的晶片的系统包括低表面张力液体源，其包括能够将低表面张力液体加热至低于低表面张力液体的沸点不超过25摄氏度的第一热源，用于将加热的低表面张力液体输送到空气/液体界面区域和朝向空气/液体界面区域的第二热源的递送机构，所述第二热源能够将空气/液体界面区域加热至至少2度 C大于低表面张力液体的沸点。还描述了一种用于处理具有低表面张力液体的晶片的方法。

2. 发明申请

WO2007078975A3 METHOD AND SYSTEM FOR USING A TWO-PHASES SUBSTRATE CLEANING COMPOUND 审中-公开
标题翻译：使用两相基板清洗化合物的方法和系统
公开(公告)号：WO2007078975A3
公开(公告)日：2008-08-28
申请号：PCT/US2006048706
申请日：2006-12-19
申请人： LAM RES CORP , KOROLIK MIKHAIL , FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MIKE , REDEKER FRED
发明人： KOROLIK MIKHAIL , FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MIKE , REDEKER FRED
IPC分类号： C09G1/00 , C09G1/02
CPC分类号： C11D11/0047 , B08B7/02 , C11D1/146 , C11D3/2079 , C11D9/02 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/6708 , H01L21/67086
摘要： Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of. solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.
摘要翻译：提供了清除化合物，设备和从基材表面除去污染物的方法。提供了从半导体衬底表面去除颗粒污染物的示例性清洁化合物。清洁化合物包括粘度在约1cP至约10,000cP之间的粘性液体。清洁化合物还包括分散在粘稠液体中的多个固体成分，多个。固体组分与基底表面上的颗粒污染物相互作用以从基底表面去除颗粒污染物。

3. 发明申请

WO2007078642A3 METHOD AND APPARATUS FOR REMOVING CONTAMINATION FROM SUBSTRATE 审中-公开
标题翻译：用于从基板去除污染的方法和设备
公开(公告)号：WO2007078642A3
公开(公告)日：2007-12-27
申请号：PCT/US2006047119
申请日：2006-12-08
申请人： LAM RES CORP , FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MICHAEL , KOROLIK MIKHAIL , REDEKER FRED C , THOMAS CLINT , PARKS JOHN
发明人： FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MICHAEL , KOROLIK MIKHAIL , REDEKER FRED C , THOMAS CLINT , PARKS JOHN
IPC分类号： B08B7/00
CPC分类号： H01L21/02057 , B05D3/10 , B08B7/02 , C11D1/04 , C11D3/042 , C11D3/044 , C11D3/18 , C11D3/2079 , C11D3/222 , C11D3/225 , C11D3/3765 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0004 , C11D17/0013 , C11D17/0017 , C11D17/003 , C11D17/041 , C23G1/00 , C23G1/18 , G03F7/42 , G03F7/423 , H01L21/02052 , H01L21/02096 , H01L21/31133 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
摘要翻译：清洁材料设置在基板上。清洁材料包括分散在液体介质内的固体组分。对液体介质内的固体组分施加力以使固体组分接近衬底上存在的污染物。施加到固体组分上的力可以由液体介质内的不混溶组分施加。当固体组分充分接近污染物时，在固体组分和污染物之间建立相互作用。然后，将固体组分移离基底，使得从基底去除与固体组分相互作用的污染物。

4. 发明申请

WO2007079036A2 METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：WO2007079036A2
公开(公告)日：2007-07-12
申请号：PCT/US2006049109
申请日：2006-12-21
申请人： LAM RES CORP , FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MICHAEL , KOROLIK MIKHAIL , REDEKER FRED C
发明人： FREER ERIK M , DE LARIOS JOHN M , MIKHAYLICHENKO KATRINA , RAVKIN MICHAEL , KOROLIK MIKHAIL , REDEKER FRED C
IPC分类号： B08B3/00
CPC分类号： B08B7/00 , B08B3/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086
摘要： A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将其中具有固体组分的流体层设置在基底的表面来启动。然后产生基本上平行于衬底的表面并朝向衬底的外边缘的剪切力。在一个实施例中，剪切力可以由施加到与流体层接触的固体的力的正常或切向分量产生。漂洗基材的表面以除去流体层。还提供清洁系统和装置。

5. 发明申请

WO2011094038A3 METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件图案自由湿法处理方法与装置
公开(公告)号：WO2011094038A3
公开(公告)日：2011-12-08
申请号：PCT/US2011020283
申请日：2011-01-05
申请人： LAM RES CORP , MIKHAYLICHENKO KATRINA , SYOMIN DENIS , FU QIAN , GALE GLENN W , LIU SHENJIAN , WILCOXSON MARK H
发明人： MIKHAYLICHENKO KATRINA , SYOMIN DENIS , FU QIAN , GALE GLENN W , LIU SHENJIAN , WILCOXSON MARK H
IPC分类号： H01L21/302 , H01L21/027
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，然后进行湿法加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

6. 发明申请

WO2011094132A2 METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
标题翻译：降低高比例纳米结构中图案褶皱的方法
公开(公告)号：WO2011094132A2
公开(公告)日：2011-08-04
申请号：PCT/US2011022075
申请日：2011-01-21
申请人： LAM RES CORP , YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
发明人： YASSERI AMIR A , ZHU JI , YUN SEOKMIN , MUI DAVID S L , MIKHAYLICHENKO KATRINA
IPC分类号： H01L21/302
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在制造半导体器件的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，以防止它们在随后的湿清洁过程中被损坏。然后可以进一步处理晶片，例如湿法清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

7. 发明申请

WO2010132371A3 MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS 审中-公开
标题翻译：多级基板清洗方法和装置
公开(公告)号：WO2010132371A3
公开(公告)日：2011-02-03
申请号：PCT/US2010034264
申请日：2010-05-10
申请人： LAM RES CORP , KHOLODENKO ARNOLD , MIKHAYLICHENKO KATRINA , LIN CHENG-YU SEAN , WILCOXSON MARK , GINZBURG LEON , KAWAGUCHI MARK
发明人： KHOLODENKO ARNOLD , MIKHAYLICHENKO KATRINA , LIN CHENG-YU SEAN , WILCOXSON MARK , GINZBURG LEON , KAWAGUCHI MARK
IPC分类号： H01L21/302
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基材表面上的污染物的一种或多种粘弹性材料。冲洗液的第一次应用是在基材的表面上进行，从基材的表面冲洗清洗材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

8. 发明申请

WO2008021257A2 CHEMICAL RESISTANT SEMICONDUCTOR PROCESSING CHAMBER BODIES 审中-公开
标题翻译：耐化学腐蚀的半导体处理腔室
公开(公告)号：WO2008021257A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/017824
申请日：2007-08-09
申请人： LAM RESEARCH CORPORATION , KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
发明人： KHOLODENKO, Arnold , MANDELBOYM, Mark , PENG, Grant , MIKHAYLICHENKO, Katrina
IPC分类号： B05C11/00 , B05D3/00
CPC分类号： H01L21/67051 , H01L21/6719
摘要： In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non- metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.
摘要翻译：在一个实施例中，公开了使半导体处理设备能够至少部分地容纳在腔室主体中的腔室主体，半导体处理设备被配置为使用流体处理基板。腔体由基体材料构成，该基体材料用于形成腔体，腔体由至少一个底面和与底面整体连接的壁面限定，以在基板加工过程中捕获流体溢流在腔体上。另外，基材是金属的。腔体还具有设置在基体材料上和基体材料上的底涂层材料。底涂层材料具有金属成分以与非金属成分一起限定与基材的整体结合。腔室主体还包括设置在底涂层材料之上和之上的主涂层材料。主涂层材料由非金属成分限定，主涂层材料的非金属成分与底涂层材料形成整体结合。定义的主要涂层材料完全覆盖底漆涂层的所有金属成分。

9. 发明申请

WO2008097438A1 METHOD AND APPARATUS FOR CONTAINED CHEMICAL SURFACE TREATMENT 审中-公开
标题翻译：含有化学表面处理的方法和装置
公开(公告)号：WO2008097438A1
公开(公告)日：2008-08-14
申请号：PCT/US2008/001010
申请日：2008-01-22
申请人： LAM RESEARCH CORPORATION , MIKHAYLICHENKO, Katrina , REDEKER, Fritz , FREER, Erik, M. , KOROLIK, Mikhail , DE LARIOS, John, M , RAVKIN, Mike
发明人： MIKHAYLICHENKO, Katrina , REDEKER, Fritz , FREER, Erik, M. , KOROLIK, Mikhail , DE LARIOS, John, M , RAVKIN, Mike
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/76841
摘要： An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions. In an alternate example, a second non-Newtonian fluid is applied to the treatment region instead of the Newtonian fluid. The second non- Newtonian fluid acts on one or more contaminants on the surface of the substrate substantially removing them from the surface of the substrate.
摘要翻译：使用接近头来制备基底的表面的装置，系统和方法包括在基底的表面和邻近头的头表面之间施加非牛顿流体。非牛顿流体在头表面和基底表面之间沿着一个或多个侧面限定了容纳壁。设置有非牛顿流体的一个或多个侧面限定了头表面和基底表面之间的基底上的处理区域。通过邻近头将牛顿流体施加到基底的表面，使得所施加的牛顿流体基本上包含在由容纳壁限定的处理区域中。所含的牛顿流体有助于从基底的表面去除一种或多种污染物。在一个示例中，非牛顿流体也可以用于创建环境控制的隔离区域，这可以有助于区域内的表面的受控处理。在替代示例中，将第二非牛顿流体施加到处理区域而不是牛顿流体。第二非牛顿流体作用于衬底表面上的一个或多个污染物，基本上将其从衬底的表面上除去。

10. 发明申请

WO2007079373A3 METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：WO2007079373A3
公开(公告)日：2007-07-12
申请号：PCT/US2006/062604
申请日：2006-12-26
申请人： LAM RESEARCH CORPORATION , FREER, Erik, M. , REDEKER, Fred, C. , MIKHAYLICHENKO, Katrina , RAVKIN, Michael , KOROLIK, Mikhail
发明人： FREER, Erik, M. , REDEKER, Fred, C. , MIKHAYLICHENKO, Katrina , RAVKIN, Michael , KOROLIK, Mikhail
IPC分类号： B08B3/00 , B08B7/00
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then die substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

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