专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08692193B2 Method for inspecting EUV reticle and apparatus thereof 有权
标题翻译： EUV掩模版检查方法及其装置
公开(公告)号：US08692193B2
公开(公告)日：2014-04-08
申请号：US13479702
申请日：2012-05-24
申请人： Chiyan Kuan , Wei Fang , You-Jin Wang
发明人： Chiyan Kuan , Wei Fang , You-Jin Wang
IPC分类号： G01N23/225 , H01J37/28
CPC分类号： G01N23/2251 , G03F1/22 , G03F1/86 , H01J37/28 , H01J2237/2817
摘要： A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.
摘要翻译：提出了一种检查EUV掩模版的方法，其使用原始设计布局信息来对准通过扫描EUV掩模版的表面而获得的图像上的多个图案，使得可以根据对齐的图案。在扫描过程中，调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤，其中调理表面的步骤可以中和表面电荷，并且检查步骤可以获得EUV掩模版的图像。检查EUV掩模版的方法还调谐延迟电极以吸引更多的二次电子，使得可以示出不同图案的灰度并且可以识别和分类缺陷。

2. 发明授权

US08575573B2 Structure for discharging extreme ultraviolet mask 有权
标题翻译：用于放电极紫外线屏蔽的结构
公开(公告)号：US08575573B2
公开(公告)日：2013-11-05
申请号：US13112536
申请日：2011-05-20
申请人： You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
发明人： You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
IPC分类号： A61N5/00
CPC分类号： H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

3. 发明申请

US20120032076A1 METHOD FOR INSPECTING EUV RETICLE AND APPARATUS THEREOF 有权
标题翻译：检查EUV的方法及其设备
公开(公告)号：US20120032076A1
公开(公告)日：2012-02-09
申请号：US12850899
申请日：2010-08-05
申请人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
发明人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01N23/2251
摘要： A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.
摘要翻译：提出了一种检测EUV掩模版的方法，其使用低密度和高能量的电子束（EB）来扫描EUV掩模版的表面以检查EUV掩模版。调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤。调理表面的步骤可以中和表面电荷，检查步骤可以获得EUV掩模版的图像。本发明使用扫描电子显微镜（SEM）提供用于调节表面电荷的一次电子束和用于扫描表面的聚焦的一次电子束。

4. 发明申请

US20100165346A1 APPARATUS FOR DETECTING A SAMPLE 有权
标题翻译：检测样品的装置
公开(公告)号：US20100165346A1
公开(公告)日：2010-07-01
申请号：US12344328
申请日：2008-12-26
申请人： YOU-JIN WANG , JIANXIN WU
发明人： YOU-JIN WANG , JIANXIN WU
IPC分类号： G01N21/55
CPC分类号： G01B11/002
摘要： An apparatus for effectively detecting and calibrating a sample of examination system. The apparatus has an optics-electricity assembly for detecting the sample by a light and an elastically supporting assembly for providing motion freedoms to adjust the relative geometric conditions between the optics-electricity assembly and the sample. The elastically supporting assembly has a planer structure and a cubic structure, and provides both motion freedoms on a plane and motion freedoms vertical to the plane. The optics electricity assembly could analyze the received reflected light to get geometric information of the sample, and could adjust the light used to detect the sample.
摘要翻译：一种用于有效检测和校准检查系统样本的装置。该装置具有用于通过光和弹性支撑组件检测样品的光学 - 电组件，用于提供用于调节光学组件和样品之间的相对几何条件的运动自由度。弹性支撑组件具有平面结构和立方结构，并且在平面上提供两个运动自由度并且垂直于平面的运动自由度。光电组件可以分析接收到的反射光以获得样品的几何信息，并可以调整用于检测样品的光。

5. 发明申请

US20100084554A1 METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM 有权
标题翻译：通过充电颗粒光束成像系统检测的波形样品控制颗粒吸收的方法
公开(公告)号：US20100084554A1
公开(公告)日：2010-04-08
申请号：US12247536
申请日：2008-10-08
申请人： You-Jin Wang , Chung-Shih Pan
发明人： You-Jin Wang , Chung-Shih Pan
IPC分类号： G01N23/00
CPC分类号： H01L22/12 , H01J2237/204 , H01J2237/2817 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling particle absorption on a wafer sample being inspected by a charged particle beam imaging system prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.
摘要翻译：控制通过带电粒子束成像系统检查的晶片样品上的颗粒吸收的方法通过将晶片样品接地并在转移和转移过程中保持电中性而防止颗粒吸收。

6. 发明授权

US08604428B2 Method of controlling particle absorption on a wafer sample being inspected by a charged particle beam imaging system 有权
标题翻译：控制由带电粒子束成像系统检查的晶片样品上的颗粒吸收的方法
公开(公告)号：US08604428B2
公开(公告)日：2013-12-10
申请号：US13236108
申请日：2011-09-19
申请人： You-Jin Wang , Chung-Shih Pan
发明人： You-Jin Wang , Chung-Shih Pan
IPC分类号： H01J37/26
CPC分类号： H01L22/12 , H01J2237/204 , H01J2237/2817 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.
摘要翻译：控制晶片样品和带电粒子束成像系统上的颗粒吸收的方法通过在晶片样品中接地而防止颗粒吸收，并在转移和转移过程中保持电中性。

7. 发明申请

US20120006984A1 METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM 有权
标题翻译：通过充电颗粒光束成像系统检测的波形样品控制颗粒吸收的方法
公开(公告)号：US20120006984A1
公开(公告)日：2012-01-12
申请号：US13236108
申请日：2011-09-19
申请人： You-Jin WANG , Chung-Shih PAN
发明人： You-Jin WANG , Chung-Shih PAN
IPC分类号： H01J37/26 , H01J37/20
CPC分类号： H01L22/12 , H01J2237/204 , H01J2237/2817 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.
摘要翻译：控制晶片样品和带电粒子束成像系统上的颗粒吸收的方法通过在晶片样品中接地而防止颗粒吸收，并在转移和转移过程中保持电中性。

8. 发明授权

US07838848B2 Patterning device holding apparatus and application thereof 有权
标题翻译：图案化装置保持装置及其应用
公开(公告)号：US07838848B2
公开(公告)日：2010-11-23
申请号：US12256828
申请日：2008-10-23
申请人： Hsuan-Bin Huang , You-Jin Wang , Chung-Shih Pan
发明人： Hsuan-Bin Huang , You-Jin Wang , Chung-Shih Pan
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/20 , H01J2237/2007 , H01J2237/20207
摘要： A patterning device holding apparatus includes a support platform unit with a plurality of first positioning projections and a gripper unit. The gripper unit includes a head portion and a plurality of second positioning projections disposed on the head portion, and a rolling member set at a base portion. The grapping and releasing of the patterning device is achieved by the rotation of the gripper unit about a pivot substantially parallel with the center axis of the rolling member. The first and second positioning projections corporately abut against the edges of a patterning device to fix the patterning device in place.
摘要翻译：图案形成装置保持装置包括具有多个第一定位突起和夹持单元的支撑平台单元。夹持单元包括头部和设置在头部上的多个第二定位突起，以及设置在基部的滚动体。图案形成装置的拍摄和释放通过夹持器单元围绕基本上平行于滚动构件的中心轴线的枢轴的旋转来实现。第一和第二定位突起共同地抵靠图案形成装置的边缘，以将图案形成装置固定就位。

9. 发明授权

US09460887B2 Discharging method for charged particle beam imaging 有权
标题翻译：带电粒子束成像放电方法
公开(公告)号：US09460887B2
公开(公告)日：2016-10-04
申请号：US12468026
申请日：2009-05-18
申请人： You-Jin Wang , Chung-Shih Pan
发明人： You-Jin Wang , Chung-Shih Pan
IPC分类号： H01J37/28 , H01J37/02
CPC分类号： H01J37/02 , H01J37/28 , H01J2237/0041 , H01J2237/0044
摘要： A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface.
摘要翻译：在样品的表面上形成导电或半导体材料层，然后当带电粒子束成像时，样品与具有大的电荷接收或电荷存储容量（例如，电容）。因此，样品表面的充电被层除去并快速释放。然后通过与预定义的试剂反应来除去该层。该反应形成气态产物，其不与样品表面形成物理或化学键。

10. 发明申请

US20120292509A1 STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
标题翻译：用于排放超极本超薄膜的结构
公开(公告)号：US20120292509A1
公开(公告)日：2012-11-22
申请号：US13112536
申请日：2011-05-20
申请人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
发明人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
IPC分类号： H01J37/26 , H05F3/02
CPC分类号： H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式