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1. 发明授权

US08519333B2 Charged particle system for reticle/wafer defects inspection and review 有权
标题翻译：带电粒子系统用于掩模/晶圆缺陷检查和检查
公开(公告)号：US08519333B2
公开(公告)日：2013-08-27
申请号：US13463208
申请日：2012-05-03
申请人： Chiyan Kuan , Yi-Xiang Wang , Chung-Shih Pan , Zhonghua Dong , Zhongwei Chen
发明人： Chiyan Kuan , Yi-Xiang Wang , Chung-Shih Pan , Zhonghua Dong , Zhongwei Chen
IPC分类号： H01J37/20 , H01J37/26 , G01N23/225 , G01N23/22
CPC分类号： G01N23/2251 , G01N2223/307 , G01N2223/611
摘要： The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.
摘要翻译：本发明涉及一种用于掩模版或半导体晶片缺陷检查和审查的带电粒子系统，更具体地涉及一种用于掩模版或半导体晶片缺陷检查和检查的电子束检查工具，而不引力AMC沉降。带电粒子系统是一个向上的电子束检查系统。面朝下设计可以防止AMC在检查期间在试样的被检查面上引力沉降，之后与常规的面朝上检查系统相比具有更清洁的结果。

2. 发明授权

US11366153B2 Micro LED display panel 有权
公开(公告)号：US11366153B2
公开(公告)日：2022-06-21
申请号：US16743496
申请日：2020-01-15
申请人： KKT Holdings Syndicate , Chiyan Kuan
发明人： Tzu-Yi Kuo , Cheng Ta Kao , Chiyan Kuan , Yu-Kuang Tseng
IPC分类号： H01L27/12 , G01R31/26 , H01L21/683 , H01L21/66 , H01L25/075 , H01L33/62 , G01R1/073 , H01L33/00
摘要： An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.

3. 发明申请

US20200225277A1 Micro LED Display Panel 审中-公开
公开(公告)号：US20200225277A1
公开(公告)日：2020-07-16
申请号：US16743496
申请日：2020-01-15
申请人： Tzu-Yi Kuo , Cheng Ta Kao , Chiyan Kuan , Yu-Kuang Tseng
发明人： Tzu-Yi Kuo , Cheng Ta Kao , Chiyan Kuan , Yu-Kuang Tseng
IPC分类号： G01R31/26 , H01L21/683 , H01L21/66 , H01L25/075 , H01L27/12 , H01L33/00 , H01L33/62 , G01R1/073
摘要： An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.

4. 发明授权

US08295580B2 Substrate and die defect inspection method 有权
标题翻译：基板和模具缺陷检查方法
公开(公告)号：US08295580B2
公开(公告)日：2012-10-23
申请号：US12553072
申请日：2009-09-02
申请人： Chiyan Kuan
发明人： Chiyan Kuan
IPC分类号： G06K9/00
CPC分类号： H01L22/12 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： A substrate inspection method is disclosed. The disclosed method includes 1) providing one or more images of one or more sample substrates; 2) identifying, from the images, two or more occurrences of a target pattern in the images; and 3) comparing the identified target-pattern occurrences against each other to determine, from the images, a presence of abnormalities in the compared target-pattern occurrences, hence determining one or more defects physically present in the target-pattern occurrences. The disclosed method may be implemented via execution of a computer program encoded in a computer readable medium, where the computer program instructs an imaging apparatus to form images of the of-interest sample substrates and instructs an image analyzing apparatus to identify and compare, from the images, the target-pattern occurrences on the sample substrates.
摘要翻译：公开了基板检查方法。所公开的方法包括：1）提供一个或多个样品基底的一个或多个图像; 2）从图像中识别图像中的两个或多个目标图案的出现; 以及3）将所识别的目标模式出现相互比较以从图像中确定比较的目标模式出现中的异常的存在，从而确定在目标模式出现中物理存在的一个或多个缺陷。所公开的方法可以通过执行在计算机可读介质中编码的计算机程序来实现，其中计算机程序指示成像装置形成感兴趣的样本基板的图像，并指示图像分析装置从图像，样本基板上的目标图案出现。

5. 发明申请

US20110052040A1 SUBSTRATE INSPECTION METHOD 有权
标题翻译：基板检查方法
公开(公告)号：US20110052040A1
公开(公告)日：2011-03-03
申请号：US12553072
申请日：2009-09-02
申请人： CHIYAN KUAN
发明人： CHIYAN KUAN
IPC分类号： G06K9/00
CPC分类号： H01L22/12 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： A substrate inspection method is disclosed. The disclosed method includes 1) providing one or more images of one or more sample substrates; 2) identifying, from the images, two or more occurrences of a target pattern in the images; and 3) comparing the identified target-pattern occurrences against each other to determine, from the images, a presence of abnormalities in the compared target-pattern occurrences, hence determining one or more defects physically present in the target-pattern occurrences. The disclosed method may be implemented via execution of a computer program encoded in a computer readable medium, where the computer program instructs an imaging apparatus to form images of the of-interest sample substrates and instructs an image analyzing apparatus to identify and compare, from the images, the target-pattern occurrences on the sample substrates.
摘要翻译：公开了基板检查方法。所公开的方法包括：1）提供一个或多个样品基底的一个或多个图像; 2）从图像中识别图像中的两个或多个目标图案的出现; 以及3）将所识别的目标模式出现相互比较以从图像中确定比较的目标模式出现中的异常的存在，从而确定在目标模式出现中物理存在的一个或多个缺陷。所公开的方法可以通过执行在计算机可读介质中编码的计算机程序来实现，其中计算机程序指示成像装置形成感兴趣的样本基板的图像，并指示图像分析装置从图像，样本基板上的目标图案出现。

6. 发明申请

US20120292509A1 STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
标题翻译：用于排放超极本超薄膜的结构
公开(公告)号：US20120292509A1
公开(公告)日：2012-11-22
申请号：US13112536
申请日：2011-05-20
申请人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
发明人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
IPC分类号： H01J37/26 , H05F3/02
CPC分类号： H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

7. 发明申请

US20120280125A1 CHARGED PARTICLE SYSTEM FOR RETICLE / WAFER DEFECTS INSPECTION AND REVIEW 有权
标题翻译：充电颗粒系统用于反渗透/缺陷检测和检查
公开(公告)号：US20120280125A1
公开(公告)日：2012-11-08
申请号：US13463208
申请日：2012-05-03
申请人： CHIYAN KUAN , YI-XIANG WANG , CHUNG-SHIH PAN , ZHONGHUA DONG , ZHONGWEI CHEN
发明人： CHIYAN KUAN , YI-XIANG WANG , CHUNG-SHIH PAN , ZHONGHUA DONG , ZHONGWEI CHEN
IPC分类号： G01N23/225 , G21K5/10
CPC分类号： G01N23/2251 , G01N2223/307 , G01N2223/611
摘要： The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.
摘要翻译：本发明涉及一种用于掩模版或半导体晶片缺陷检查和审查的带电粒子系统，更具体地涉及一种用于掩模版或半导体晶片缺陷检查和检查的电子束检查工具，而不引力AMC沉降。带电粒子系统是一个向上的电子束检查系统。面朝下设计可以防止AMC在检查期间在试样的被检查面上引力沉降，之后与常规的面朝上检查系统相比具有更清洁的结果。

8. 发明授权

US07115866B1 Site stepping for electron beam micro analysis 有权
标题翻译：电子束微观分析的现场步调
公开(公告)号：US07115866B1
公开(公告)日：2006-10-03
申请号：US11116617
申请日：2005-04-28
申请人： Roger Kroeze , David A. Soltz , David A. Crewe , Gregory W. Grant , Chiyan Kuan , Thierry H. C. Nguyen , Salvatore T. Fahey , Edward M. James
发明人： Roger Kroeze , David A. Soltz , David A. Crewe , Gregory W. Grant , Chiyan Kuan , Thierry H. C. Nguyen , Salvatore T. Fahey , Edward M. James
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： G01N23/2252 , H01J37/252 , H01J37/265 , H01J2237/24592 , H01J2237/2487 , H01J2237/2561 , H01J2237/30477
摘要： A method of measuring properties of a sample using an electron beam. Coordinates of a measurement site on the sample, and a diameter of the electron beam are defined. Multiple measurement locations are determined within the measurement site, using the coordinates of the measurement site and the diameter of the electron beam. The measurement locations are selected such that the electron beam when directed at the multiple measurement locations (either through beam deflection or sample movement) substantially covers the measurement site. The electron beam is directed to the measurement locations and properties of the sample are measured at each of the measurement locations.
摘要翻译：使用电子束测量样品的性质的方法。定义样品上的测量部位的坐标和电子束的直径。使用测量部位的坐标和电子束的直径，在测量部位内确定多个测量位置。选择测量位置使得当指向多个测量位置（通过光束偏转或样品移动）时的电子束基本上覆盖测量位置。电子束被引导到测量位置，并且在每个测量位置处测量样品的性质。

9. 发明授权

US08692193B2 Method for inspecting EUV reticle and apparatus thereof 有权
标题翻译： EUV掩模版检查方法及其装置
公开(公告)号：US08692193B2
公开(公告)日：2014-04-08
申请号：US13479702
申请日：2012-05-24
申请人： Chiyan Kuan , Wei Fang , You-Jin Wang
发明人： Chiyan Kuan , Wei Fang , You-Jin Wang
IPC分类号： G01N23/225 , H01J37/28
CPC分类号： G01N23/2251 , G03F1/22 , G03F1/86 , H01J37/28 , H01J2237/2817
摘要： A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.
摘要翻译：提出了一种检查EUV掩模版的方法，其使用原始设计布局信息来对准通过扫描EUV掩模版的表面而获得的图像上的多个图案，使得可以根据对齐的图案。在扫描过程中，调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤，其中调理表面的步骤可以中和表面电荷，并且检查步骤可以获得EUV掩模版的图像。检查EUV掩模版的方法还调谐延迟电极以吸引更多的二次电子，使得可以示出不同图案的灰度并且可以识别和分类缺陷。

10. 发明授权

US08575573B2 Structure for discharging extreme ultraviolet mask 有权
标题翻译：用于放电极紫外线屏蔽的结构
公开(公告)号：US08575573B2
公开(公告)日：2013-11-05
申请号：US13112536
申请日：2011-05-20
申请人： You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
发明人： You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
IPC分类号： A61N5/00
CPC分类号： H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

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