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    • 1. 发明专利
    • Vacuum recycling apparatus and method for refining solar grade polysilicon
    • 真空回收装置和精制太阳能等离子体聚硅氧烷的方法
    • JP2013091595A
    • 2013-05-16
    • JP2012227733
    • 2012-10-15
    • Wen-Bin Sun孫文彬Huang Hsiu Min黄秀敏
    • SUN WEN-BIN
    • C01B33/037
    • C01B33/037H01L31/182Y02E10/546Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a vacuum recycling apparatus and a method for refining solar grade polysilicon, capable of producing directly a polysilicon solution having a prescribed concentration, and shortening greatly the time and cost required for production of polysilicon.SOLUTION: This apparatus includes a vacuum degassing furnace and a circulation method vacuum processing furnace. A vacuum degassing furnace includes a vacuum chamber, a silicon storage part and a rare gas intake device. Among them, the vacuum chamber includes a first vacuum nozzle and a coupling hole. The silicon storage part is provided in the vacuum chamber, and arranged under the coupling hole. The rare gas intake device is provided in the silicon storage part. The circulation method vacuum processing furnace includes a second vacuum nozzle and a single nozzle communicating tube, and the single nozzle communicating tube is inserted into the silicon storage part via the coupling hole.
    • 要解决的问题:提供一种能够直接生产具有规定浓度的多晶硅溶液并且大大缩短生产多晶硅所需的时间和成本的太阳能级多晶硅的真空回收设备和方法。 解决方案:该设备包括真空脱气炉和循环法真空处理炉。 真空脱气炉包括真空室,硅储存部和稀有的进气装置。 其中,真空室包括第一真空喷嘴和联接孔。 硅存储部设置在真空室中,并且布置在耦合孔的下方。 在硅储存部中设置稀有的进气装置。 循环方式真空处理炉包括第二真空喷嘴和单个喷嘴连通管,并且单个喷嘴连通管经由联接孔插入硅储存部。 版权所有(C)2013,JPO&INPIT
    • 6. 发明申请
    • METHOD OF PLASMA ETCHING WITH PATTERN MASK
    • 等离子体蚀刻与图案掩模的方法
    • US20070262051A1
    • 2007-11-15
    • US11382958
    • 2006-05-12
    • Wen-Kun YangJui-Hsien ChangWen-Bin Sun
    • Wen-Kun YangJui-Hsien ChangWen-Bin Sun
    • C03C25/68C23F1/00H01L21/306
    • H01L21/321H01L21/31144
    • The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metal oxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide.
    • 本发明提供了一种使用图案掩模进行等离子体蚀刻的方法。 在晶片的两个部分中有两种不同的器件,包括硅和砷化镓(GaAs)。 硅部分用于一般半导体。 而GaAs部分用于RF器件。 硅中的焊盘材料通常是金属,金属氧化物通常形成在焊盘上。 金属氧化物对于进一步的处理是不需要的; 因此应该通过等离子体蚀刻工艺去除。 将膜附着到衬底的表面,暴露出需要蚀刻的区域。 然后将掩模附着并对准到膜上,从而暴露该区域对蚀刻的需要。 然后在衬底上施加等离子体干蚀刻以去除金属氧化物。