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    • 2. 发明申请
    • PHOTO SENSING UNIT AND PHOTO SENSOR THEREOF
    • 照片感光单元及其照片传感器
    • US20120138919A1
    • 2012-06-07
    • US12974206
    • 2010-12-21
    • WEI-CHOU LANSUNG-HUI HUANGCHIA-CHUN YEHTED-HONG SHINN
    • WEI-CHOU LANSUNG-HUI HUANGCHIA-CHUN YEHTED-HONG SHINN
    • H01L29/12
    • H01L27/14609H01L31/02019H04N5/374H04N5/3741
    • A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.
    • 在光传感器中使用的感光单元包括感光晶体管,存储电容器和开关晶体管。 感光晶体管相应地接收用于感应光电流的光信号,并且其源极和栅极分别耦合到第一信号源和第二信号源。 存储电容器存储由光信号引起的电荷,其一个端子耦合到感光晶体管的漏极,并且其另一个端子耦合到低电压。 开关晶体管由第二信号源控制,用于将存储电容器的读出信号输出到信号读出线。 光电晶体管的阈值电压高于开关晶体管的阈值电压。
    • 3. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    • 薄膜晶体管阵列基板及其制造方法
    • US20110278563A1
    • 2011-11-17
    • US12838107
    • 2010-07-16
    • SUNG-HUI HUANGWei-Chou LanTed-Hong Shinn
    • SUNG-HUI HUANGWei-Chou LanTed-Hong Shinn
    • H01L27/12H01L21/84H01L21/34H01L29/786
    • H01L27/1225
    • A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.
    • 薄膜晶体管阵列基板包括基板,栅极层,栅极绝缘层,源极/漏极层,图案化保护层,氧化物半导体层,树脂层和像素电极。 栅极层设置在基板上。 栅极绝缘层设置在栅极层和基板上。 源极/漏极层设置在栅极绝缘层上。 图案化的保护层设置在源极/漏极层上并暴露源极/漏极层的一部分。 氧化物半导体层设置在图案化的保护层上并电连接到源极/漏极层。 树脂层设置在氧化物半导体层上并覆盖氧化物半导体层。 像素电极设置在树脂层上并连接到源极/漏极层。 本发明还提供了制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以防止漏电流。
    • 6. 发明申请
    • PIXEL STRUCTURE AND FABRICATION METHOD THEREOF
    • 像素结构和制造方法
    • US20110220906A1
    • 2011-09-15
    • US12789834
    • 2010-05-28
    • SUNG-HUI HUANGHENRY WANGFANG AN SHUTED-HONG SHINN
    • SUNG-HUI HUANGHENRY WANGFANG AN SHUTED-HONG SHINN
    • H01L27/15H01L21/84
    • H01L29/45H01L27/1225H01L27/124H01L27/1255
    • The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.
    • 本发明公开了像素结构及其制造方法。 像素包括在薄膜晶体管区域形成的薄膜晶体管和在像素电极区域形成的存储电容器。 该方法包括:在衬底上形成栅极导电层; 在栅极导电层上形成栅极绝缘层; 在所述栅极绝缘层上形成源极导电层和漏极导电层,其中所述漏极导电层具有延伸到所述像素电极区域的延伸部分; 在源极导电层和漏极导电层上形成沟道层; 以及在沟道层上形成保护层。 延伸部分和电极层分别用作存储电容器的上部和下部电极。 其中栅极导电层,源极导电层,漏极导电层和沟道层由金属氧化物制成。