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1. 发明申请

WO2013169559A1 SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用微波等离子体化学气相沉积的SIOX工艺化学发展
公开(公告)号：WO2013169559A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/039341
申请日：2013-05-02
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
发明人： WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400°C, flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，将包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，向微波功率施加微波功率从反应气体产生微波等离子体，并在衬底的暴露表面的至少一部分上沉积氧化硅层。

2. 发明申请

WO2013123431A1 METHOD FOR DEPOSITING AN ENCAPSULATING FILM 审中-公开
标题翻译：沉积膜的方法
公开(公告)号：WO2013123431A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/026492
申请日：2013-02-15
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10 , H05B33/04
CPC分类号： H01L51/5256 , C23C16/26 , C23C16/345
摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
摘要翻译：描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。在其他实施例中，有机介电层夹在无机封装层之间。

3. 发明申请

WO2007040798A3 METHOD TO IMPROVE TRANSMITTANCE OF AN ENCAPSULATING FILM 审中-公开
标题翻译：改进封装膜传输的方法
公开(公告)号：WO2007040798A3
公开(公告)日：2009-05-07
申请号：PCT/US2006030304
申请日：2006-08-02
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , YADAV SANJAY
发明人： WON TAE KYUNG , YADAV SANJAY
IPC分类号： H01L21/20
CPC分类号： C23C16/26 , C23C8/36 , C23C16/345 , C23C28/00 , C23C28/046 , C23C28/42 , H01L51/5256
摘要： A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.
摘要翻译：将含碳材料层沉积在基材上的方法包括将含碳材料层的前体的混合物输送到处理室中，用硅掺杂含碳材料层，并将含碳材料层沉积在低温。在一个方面，获得了在可见光谱的所有波长处的含碳材料层的改进的透光率。此外，由于所使用的下层材料的热不稳定性，提供了用于沉积封装层的方法用于需要低温沉积工艺的各种显示应用。封装层可以包括一个或多个阻挡层材料层和一个或多个无定形碳材料层。无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

4. 发明申请

WO2008147696A1 METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
标题翻译：用于在太阳能电池应用中使用的激光可控TCO层上沉积硅层的方法
公开(公告)号：WO2008147696A1
公开(公告)日：2008-12-04
申请号：PCT/US2008/063613
申请日：2008-05-14
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHOI, Soo Young , CHAE, YongKee , LI, Liwei , SHENG, Shuran
发明人： WON, Tae Kyung , CHOI, Soo Young , CHAE, YongKee , LI, Liwei , SHENG, Shuran
IPC分类号： H01L21/00
CPC分类号： H01L21/68735
摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.
摘要翻译：提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。该方法包括激光划片用于太阳能电池应用的TCO层的方法。在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域，TCO层具有激光划线自由周边所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度，将所述划线基板转印到沉积室中，并且在所述TCO层上沉积含硅层在沉积室中。

5. 发明申请

WO2007040798A2 METHOD TO IMPROVE TRANSMITTANCE OF AN ENCAPSULATING FILM 审中-公开
标题翻译：改进封装膜传输的方法
公开(公告)号：WO2007040798A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/030304
申请日：2006-08-02
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , YADAV, Sanjay
发明人： WON, Tae Kyung , YADAV, Sanjay
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/26 , C23C8/36 , C23C16/345 , C23C28/00 , C23C28/046 , C23C28/42 , H01L51/5256
摘要： A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.
摘要翻译：将含碳材料层沉积在基材上的方法包括将含碳材料层的前体的混合物输送到处理室中，用硅掺杂含碳材料层，并将含碳材料层沉积在低温。在一个方面，获得了在可见光谱的所有波长处的含碳材料层的改进的透光率。此外，由于所使用的下层材料的热不稳定性，提供了用于沉积封装层的方法用于需要低温沉积工艺的各种显示应用。封装层可以包括一个或多个阻挡层材料层和一个或多个无定形碳材料层。无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

6. 发明申请

WO2006065571A2 FUEL CELL CONDITIONING LAYER 审中-公开
标题翻译：燃料电池调节层
公开(公告)号：WO2006065571A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/043912
申请日：2005-12-05
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , BACHRACH, Robert , WHITE, John M. , BLONIGAN, Wendell, T.
发明人： WON, Tae Kyung , BACHRACH, Robert , WHITE, John M. , BLONIGAN, Wendell, T.
IPC分类号： H01M8/02 , B05D5/12 , C23C16/00
CPC分类号： C23C16/24 , C23C16/345 , H01M8/0213 , H01M8/0215 , H01M8/0226 , H01M8/0228
摘要： A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mixture of precursors of the hydrophilic material layer. In addition, the method includes reducing a fluid contact angle of the substrate surface. The hydrophilic material layer comprises a wet etch rate of less than about 0.03 Å/min in the presence of about 10 ppm of hydrofluoric acid in water. The material layer can be used to condition various parts of a fuel cell useful in applications to generate electricity.
摘要翻译：描述了用于沉积材料层以处理和调节诸如燃料电池部件的基板的方法和装置。该方法包括在亲水材料层的前体的混合物的处理室中的基底表面的一部分上沉积亲水材料层。此外，该方法包括降低衬底表面的流体接触角。在大约10ppm氢氟酸存在下，亲水性材料层包括小于约0.03 /分钟的湿蚀刻速率。材料层可用于调节用于发电的燃料电池的各种部件。

7. 发明申请

WO2012092020A3 THIN FILM DEPOSITION USING MICROWAVE PLASMA 审中-公开
公开(公告)号：WO2012092020A3
公开(公告)日：2012-07-05
申请号：PCT/US2011/066124
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , NOMINANDA, Helinda , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef
发明人： WON, Tae Kyung , NOMINANDA, Helinda , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef
IPC分类号： H01L21/205
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm 2 to about 5,000 milliWatts/cm 2 at a frequency of about 1 GHz to about 10 GHz.

8. 发明申请

WO2009114242A1 WATER-BARRIER ENCAPSULATION METHOD 审中-公开
标题翻译：水障碍包埋方法
公开(公告)号：WO2009114242A1
公开(公告)日：2009-09-17
申请号：PCT/US2009/034266
申请日：2009-02-17
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CAMPO, Jose Manuel Dieguez , WHITE, John M. , YADAV, Sanjay D.
发明人： WON, Tae Kyung , CAMPO, Jose Manuel Dieguez , WHITE, John M. , YADAV, Sanjay D.
IPC分类号： H05B33/04 , H05B33/10 , H01L51/52
CPC分类号： H01L21/6715 , H01L51/5256
摘要： The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or 'encapsulate' the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure.
摘要翻译：本发明一般涉及有机发光二极管（OLED）结构及其制造方法。为了增加OLED结构的寿命，可以在OLED结构上沉积封装层。封装层可以完全包围或“封装”OLED结构。封装层可以具有与OLED结构和封装层之间的界面相对的基本平坦的表面。平面表面允许连续的层均匀地沉积在OLED结构上。封装层减少了OLED结构中的氧渗透，并且可能增加OLED结构的寿命。

9. 发明申请

WO2009102520A1 MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR 审中-公开
标题翻译：微晶硅薄膜晶体管
公开(公告)号：WO2009102520A1
公开(公告)日：2009-08-20
申请号：PCT/US2009/030865
申请日：2009-01-13
申请人： APPLIED MATERIALS, INC. , WON, Tae, Kyung , CHOI, Soo, Young , PARK, Beom, Soo , YIM, Dong-Kil , CHEN, Jriyan, Jerry
发明人： WON, Tae, Kyung , CHOI, Soo, Young , PARK, Beom, Soo , YIM, Dong-Kil , CHEN, Jriyan, Jerry
IPC分类号： H01L21/205 , H01L29/78
CPC分类号： H01L29/04 , C23C16/26 , H01J37/32009 , H01J37/32357 , H01J37/32862 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/66742 , H01L29/7866
摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.
摘要翻译：提供了在薄膜晶体管结构中形成微晶硅层的方法。在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

10. 发明申请

WO2008154446A3 AN APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于沉积均匀硅膜的装置及其制造方法
公开(公告)号：WO2008154446A3
公开(公告)日：2009-02-26
申请号：PCT/US2008066210
申请日：2008-06-06
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
发明人： CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

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