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1. 发明专利

JP2019024471A ロッドホルダーベース审中-公开
公开(公告)号：JP2019024471A
公开(公告)日：2019-02-21
申请号：JP2017151161
申请日：2017-08-03
申请人： CHIBA TETSURYU , WANG GENG ZHI
发明人： CHIBA TETSURYU , WANG GENG ZHI
IPC分类号： A01K97/10
摘要：【課題】様々な釣り関連用品を保持することが可能なロッドホルダーベースの提供。【解決手段】ロッドホルダーベース1は、ベース部2と、アーム部3とを備えている。ベース部2は、船縁20に取り付けられロッドホルダー10を支持している。アーム部3は、ベース部2に接続されている。アーム部3には、餌箱台座41及び磁石台座47が着脱可能である。【選択図】図3

2. 发明申请

WO2011079014A3 NETWORK COPOLYMER CROSSLINKED EMULSIONS AND DEMULSIFYING COMPOSTIONS COMPRISE THE SAME 审中-公开
标题翻译：网络共聚物交联乳液和破乳组合物包括同样的
公开(公告)号：WO2011079014A3
公开(公告)日：2011-09-15
申请号：PCT/US2010060716
申请日：2010-12-16
申请人： MOMENTIVE PERFORMANCE MAT INC , LU NING , GONZALEZ SIGFREDO , SILVESTRE EMIE M , WANG GENG
发明人： LU NING , GONZALEZ SIGFREDO , SILVESTRE EMIE M , WANG GENG
IPC分类号： C08F220/26 , A61K8/06 , C08F220/38 , C08F230/02
CPC分类号： C08F220/26 , A61K8/8152 , A61K2800/54 , A61Q1/02 , A61Q5/12 , C08F220/38 , C08F230/02
摘要： The present invention is directed to a network composition the reaction product of: (I) at least one anionic polymerizable ethylenically unsaturated monomer (I) selected from the group consisting of [CH2=C(R3)C(O)OX3(C2H4O)b(C3H6O)c.(C4H8,O)d]pP(O)(OY)q(OZ)r where R3= H or alkyl of 1 to about 6 carbon atoms; X= alkyl, aryl or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a is 0 to about 100;b is 0 to about 100;c is 0 to about 100; d is 0 to about 100;q is 0 to about 2; r is 0 to about 2; p is 1 to about 3 subject to the limitation that p +q +r= 3; and Y and Z is H, or metal ion; and CH2=C(R3)C(O)OXa'(C2H4O)b'(C3H6O)c'(C4H8,O)d'-SO3-Y) where R3 = H or alkyl of from 1 to about 6 carbon atoms; X= alky!, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a' is 0 to about 100;b' is 0 to about 100;c' is 0 to about 100; d' is 0 to about 100;Y is H, or metal ion; and (ii) one or more additional monomers (H) selected from the group consisting of acrylic acid/acrylate, methacrylic acid/methacrylate, acrylamides, vinyl acetate and styrene, which are copolymerizable with (I); and (iii) a cross-linking agent (III), capable of copolymerizing with (I) and (II).
摘要翻译：（I）至少一种选自以下的阴离子可聚合烯键式不饱和单体（I）：[CH 2 = C（R 3）C（O）OX 3（C 2 H 4 O）b （C 3 H 6 O）c。（C 4 H 8，O）d] pP（O）（OY）q（OZ）r其中R 3 = H或1至约6个碳原子的烷基; X = 0至约9个碳原子的烷基，芳基或烷芳基二基连接基团; a为0至约100; b为0至约100; c为0至约100; d为0至约100; q为0至约2; r是0至约2; p为1至约3，但受限于p + q + r = 3; Y和Z是H或金属离子; 和CH 2 = C（R3）C（O）OXa'（C2H4O）b'（C3H6O）c'（C4H8，O）d'-SO3-Y）其中R3 = H或1至约6个碳原子的烷基; X = 0至约9个碳原子的烷基，芳基或烷芳基二基连接基团; a'为0至约100; b'为0至约100; c'为0至约100; d'为0至约100; Y为H或金属离子; 和（ii）选自丙烯酸/丙烯酸酯，甲基丙烯酸/甲基丙烯酸酯，丙烯酰胺，乙酸乙烯酯和苯乙烯的一种或多种另外的单体（H），其可与（I）共聚; 和（iii）能够与（I）和（II）共聚的交联剂（III）。

3. 发明申请

WO2011079187A1 NETWORK COPOLYMER CROSSLINKED COMPOSITIONS AND PRODUCTS COMPRISING THE SAME 审中-公开
标题翻译：网络共聚物交联组合物和包含该组合物的产品
公开(公告)号：WO2011079187A1
公开(公告)日：2011-06-30
申请号：PCT/US2010/061767
申请日：2010-12-22
申请人： MOMENTIVE PERFORMANCE MATERIALS INC. , LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
发明人： LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
IPC分类号： C09D4/00
CPC分类号： C09D4/00
摘要： The present invention provides for a household, agricultural, coating or personal care product composition containing the crosslinked reaction product of a network composition the reaction product of: (i) at least one anionic polymerizable ethylenically unsaturated monomer (I) selected from the group consisting of [CH 2 =C(R 3 )C(O)OX a (C 2 H 4 O) b (C 3 H 6 O) c (C 4 H 8 O) d ]pP(O)(OY) q (OZ) r where R 3 = H or alkyl of 1 to about 6 carbon atoms; X= alkyl, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a is 0 to about 100;b is 0 to about 100;c is 0 to about 100; d is 0 to about 100;q is 0 to about 2; r is 0 to about 2; p is 1 to about 3 subject to the limitation that p +q +r = 3; and Y and Z is H, or metal ion; and CH 2 =C(R 3 )C(O)OX a' (C 2 H 4 O) b' (C 3 H 6 O) c' (C 4 H 8 O) d' -SO 3 -Y) where R 3 = H or alkyl of from 1 to about 6 carbon atoms; X= alkyl, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a' is 0 to about 100; b' is 0 to about 100; c' is 0 to about 100; d' is 0 to about 100; Y is H, or metal ion; and (ii) one or more additional monomers (II) selected from the group consisting of acrylic acid/acrylate, methacrylic acid/methacrylate, acrylamides, vinyl acetate and styrene, which are copolymerizable with (I); and (iii) a cross-linking agent (III), capable of copolymerizing with (I) and (II).
摘要翻译：本发明提供一种家用，农业，涂料或个人护理产品组合物，其含有网状组合物的交联反应产物，反应产物为：（i）至少一种阴离子可聚合烯属不饱和单体（I），其选自其中R 3 = H或1至约6个碳原子的烷基（CH 2 = C（R 3）C（O）O X a（C 2 H 4 O）b（C 3 H 6 O）c（C 4 H 8 O）d] ; X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a为0至约100; b为0至约100; c为0至约100; d为0至约100; q为0至约2; r为0〜2; p为1至约3，但受限于p + q + r = 3; Y和Z是H或金属离子; 和C 1 -C 6烷基;和C 1 -C 6烷基;和C 1 -C 6烷基，C 1 -C 6烷基， X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a'为0〜100; b'为0至约100; c'为0至约100; d'为0至约100; Y是H或金属离子; 和（ii）可与（I）共聚的一种或多种选自丙烯酸/丙烯酸酯，甲基丙烯酸/甲基丙烯酸酯，丙烯酰胺，乙酸乙烯酯和苯乙烯的另外的单体（II）; 和（iii）能够与（I）和（II）共聚的交联剂（III）。

4. 发明申请

WO2011079012A1 NETWORK COPOLYMER CROSSLINKED COMPOSITIONS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：网络共聚物交联组合物及其制备方法
公开(公告)号：WO2011079012A1
公开(公告)日：2011-06-30
申请号：PCT/US2010/060713
申请日：2010-12-16
申请人： MOMENTIVE PERFORMANCE MATERIALS INC. , LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
发明人： LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
IPC分类号： C08F230/02 , C08F220/38
CPC分类号： C08F220/38 , C08F228/02 , C08F230/02
摘要： The present invention is directed to a network composition having the reaction product of: (i) at least one anionic polymerizable ethylenically unsaturated monomer (I) selected from the group consisting of [CH 2 =C(R 3 )C(O)OX a (C 2 H 4 O) b (C 3 H 6 O) c ,(C 4 H 8 O) d ] p P(OY) a (OZ) r where R 3 = H or alkyl of 1 to about 6 carbon atoms; X= alkyl, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a is 0 to about 100; b is 0 to about 100;c is 0 to about 100; d is 0 to about 100;q is 0 to about 2; r is 0 to about 2; p is 1 to about 3 subject to the limitation that p +q +r=3; and Y and Z is H, or metal ion; and CH 2 =C(R 3 )C(O)OX 3 (C 2 H 4 O) b (C 3 H 6 O) c (C 4 H 8 O) d -SO 3 -Y) where R 3 = H or alkyl of from 1 to about 6 carbon atoms; X=alkyl, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a' is 0 to about 100; b' is 0 to about 100; c' is 0 to about 100; d' is 0 to about 100; Y is H, or metal ion; and (ii) one or more additional monomers (II) selected from the group consisting of acrylic acid/acrylate, methacrylic acid/methacrylate, acrylamides, vinyl acetate and styrene, which are copolymerizable with (I); and (iii) a cross-linking agent (III) capable of copolymerizing with (I) and (II).
摘要翻译：本发明涉及一种具有以下反应产物的网络组合物：（i）至少一种选自[CH2 = C（R3）C（O）OXa（C2H4O））的阴离子可聚合烯属不饱和单体（I） b（C 3 H 6 O）c，（C 4 H 8 O）d] pP（OY）a（OZ）r其中R 3 = H或1至约6个碳原子的烷基; X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a为0〜100; b为0至约100; c为0至约100; d为0至约100; q为0至约2; r为0〜2; p为1至约3，但受限于p + q + r = 3; Y和Z是H或金属离子; 和CH 2 = C（R 3）C（O）OX 3（C 2 H 4 O）b（C 3 H 6 O）c（C 4 H 8 O）d -SO 3 -Y）其中R 3 = H或1至约6个碳原子的烷基; X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a'为0至约100; b'为0至约100; c'为0至约100; d'为0至约100; Y是H或金属离子; 和（ii）可与（I）共聚的一种或多种选自丙烯酸/丙烯酸酯，甲基丙烯酸/甲基丙烯酸酯，丙烯酰胺，乙酸乙烯酯和苯乙烯的另外的单体（II）; 和（iii）能够与（I）和（II）共聚的交联剂（III）。

5. 发明申请

WO2011075316A1 METHOD AND APPARATUS FOR DISPLAYING INFORMATION IN AN ELECTRONIC DEVICE 审中-公开
标题翻译：用于在电子设备中显示信息的方法和装置
公开(公告)号：WO2011075316A1
公开(公告)日：2011-06-23
申请号：PCT/US2010/058671
申请日：2010-12-02
申请人： MOTOROLA MOBILITY, INC. , WANG, Geng , FOLEY, Sheila, A. , POWELL, Ryan, A.
发明人： WANG, Geng , FOLEY, Sheila, A. , POWELL, Ryan, A.
IPC分类号： G06F3/048
CPC分类号： G06F3/0485 , G06F3/0483 , G06F3/04883 , G06F2203/04803 , G06F2203/04806
摘要： A method and apparatus includes an electronic device that displays (110) a plurality of members on a first portion of a display and receives (115) a first input on the first portion of the display, wherein the input selects a first member from the plurality of members. Then, the electronic device enlarges (120) the first member and displays (130) additional information associated with the first member on the first portion of the display. After the selection, the device determines (135) if the received input is an entry input. If the input is determined to be an entry input, then detailed information associated with the first member is displayed (140) on a second portion of the display.
摘要翻译：一种方法和装置包括：电子设备，其在显示器的第一部分上显示（110）多个构件，并且在所述显示器的第一部分上接收（115）第一输入，其中所述输入从所述多个的成员。然后，电子设备放大（120）第一构件，并在显示器的第一部分上显示（130）与第一构件相关联的附加信息。在选择之后，设备确定（135）接收到的输入是否是入口输入。如果输入被确定为输入输入，则在显示器的第二部分上显示与第一成员相关联的详细信息（140）。

6. 发明申请

WO2007082227A3 MULTIPLE PORT MEMORY HAVING A PLURALITY OF PARALLEL CONNECTED TRENCH CAPACITORS IN A CELL 审中-公开
标题翻译：具有多个并联连接的电容器的多端口存储器
公开(公告)号：WO2007082227A3
公开(公告)日：2008-09-25
申请号：PCT/US2007060317
申请日：2007-01-10
申请人： IBM , CHENG KANGGUO , DIVAKARUNI RAMACHANDRA , MANDELMAN JACK A , RADENS CARL J , WANG GENG
发明人： CHENG KANGGUO , DIVAKARUNI RAMACHANDRA , MANDELMAN JACK A , RADENS CARL J , WANG GENG
IPC分类号： G11C11/24 , H01L21/8242
CPC分类号： G11C8/16 , G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10861
摘要： An integrated circuit is provided which includes a memory (100) having multiple ports per memory cell for accessing a data bit with each of a plurality of the memory cells. Such memory includes an array of memory cells in which each memory cell includes a plural of capacitors (102) connected together as a unitary source of capacitance (S). A first access transistor (104) is coupled between a firs one of the plurality of capacitors and a first bitline (RBL) and a second access transistor (106) is coupled between a second one of th plurality of capacitors and a second bitline (WBL) In each memory cell, a gate of the first access transistor (104) is connected to a fi wordline (RWL) and a gate of the second access transistor (106) is connected to a second wordline (WWL)
摘要翻译：提供一种集成电路，其包括每个存储器单元具有多个端口的存储器（100），用于利用多个存储器单元中的每一个访问数据位。这样的存储器包括存储单元阵列，其中每个存储单元包括连接在一起的多个电容器（102）作为电容（S）的整体源。第一存取晶体管（104）耦合在所述多个电容器中的第一个电容器中，并且第一位线（RBL）和第二存取晶体管（106）耦合在所述多个电容器中的第二电容器和第二位线（WBL ）在每个存储单元中，第一存取晶体管（104）的栅极连接到fi字线（RWL），第二存取晶体管（106）的栅极连接到第二字线（WWL）

7. 发明申请

WO2004064148A1 HIGH PERFORMANCE EMBEDDED DRAM TECHNOLOGY WITH STRAINED SILICON 审中-公开
标题翻译：具有应变硅的高性能嵌入式DRAM技术
公开(公告)号：WO2004064148A1
公开(公告)日：2004-07-29
申请号：PCT/US2003/000562
申请日：2003-01-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MANDELMAN, Jack, A. , GAMBINO, Jeffrey, P. , WANG, Geng
发明人： MANDELMAN, Jack, A. , GAMBINO, Jeffrey, P. , WANG, Geng
IPC分类号： H01L21/8242
CPC分类号： H01L27/10894 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/3081 , H01L27/10864
摘要： Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.
摘要翻译：半导体器件制造在同一衬底的应变层区域和无应变层的层中。第一半导体器件，例如存储器单元，例如在衬底的无应变层的区域中形成深沟槽存储单元。在相同的衬底中选择性地形成应变层区域。第二半导体器件（66,68,70），例如FET，例如，一个MOSFET逻辑器件，形成在应变层区域中。

8. 发明申请

WO2011139872A1 ENHANCED CAPACITANCE DEEP TRENCH CAPACITOR FOR EDRAM 审中-公开
标题翻译： EDRAM的增强电容深度电容器
公开(公告)号：WO2011139872A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/034430
申请日：2011-04-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KWON, Oh-Jung , LEE, Junedong , PEI, Chengwen , WANG, Geng
发明人： KWON, Oh-Jung , LEE, Junedong , PEI, Chengwen , WANG, Geng
IPC分类号： H01L29/94
CPC分类号： H01L28/82 , H01L27/10867 , H01L29/66181
摘要： A substrate including a stack of a handle substrate, an optional lower insulator layer, a doped polycrystalline semiconductor layer, an upper insulator layer, and a top semiconductor layer is provided. A deep trench is formed through the top semiconductor layer, the upper insulator layer, and the doped polycrystalline semiconductor layer. Exposed vertical surfaces of the polycrystalline semiconductor layer are crystallographically etched to form random facets in the deep trench, thereby increasing the total exposed surface area of the polycrystalline semiconductor layer in the deep trench. A node dielectric and at least one conductive material are deposited to fill the trench and to form a buried strap portion, which constitute a capacitor of an eDRAM. Access transistors and other logic devices can be formed.
摘要翻译：提供了包括手柄衬底，可选的下绝缘体层，掺杂多晶半导体层，上绝缘体层和顶部半导体层的衬底的衬底。通过顶部半导体层，上部绝缘体层和掺杂多晶半导体层形成深沟槽。多晶半导体层的暴露的垂直表面被晶体学蚀刻以在深沟槽中形成随机刻面，从而增加深沟槽中的多晶半导体层的总暴露表面积。沉积节点电介质和至少一种导电材料以填充沟槽并形成构成eDRAM的电容器的掩埋带部分。可以形成存取晶体管和其它逻辑器件。

9. 发明申请

WO2011079014A2 NETWORK COPOLYMER CROSSLINKED EMULSIONS AND DEMULSIFYING COMPOSTIONS COMPRISE THE SAME 审中-公开
标题翻译：网络共聚物交联乳液和分解组合物
公开(公告)号：WO2011079014A2
公开(公告)日：2011-06-30
申请号：PCT/US2010/060716
申请日：2010-12-16
申请人： MOMENTIVE PERFORMANCE MATERIALS INC. , LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
发明人： LU, Ning , GONZALEZ, Sigfredo , SILVESTRE, Emie, M. , WANG, Geng
IPC分类号： C08K5/541 , C08L43/02
CPC分类号： C08F220/26 , A61K8/8152 , A61K2800/54 , A61Q1/02 , A61Q5/12 , C08F220/38 , C08F230/02
摘要： The present invention is directed to a network composition the reaction product of: (I) at least one anionic polymerizable ethylenically unsaturated monomer (I) selected from the group consisting of [CH 2 =C(R 3 )C(O)OX 3 (C 2 H 4 O)b(C 3 H 6 O) c .(C 4 H 8 ,O) d ] p P(O)(OY) q (OZ) r where R3= H or alkyl of 1 to about 6 carbon atoms; X= alkyl, aryl or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a is 0 to about 100;b is 0 to about 100;c is 0 to about 100; d is 0 to about 100;q is 0 to about 2; r is 0 to about 2; p is 1 to about 3 subject to the limitation that p +q +r= 3; and Y and Z is H, or metal ion; and CH 2 =C(R 3 )C(O)OX a' (C 2 H 4 O) b' (C 3 H 6 O) c' (C 4 H 8 ,O) d' -SO 3 -Y) where R3 = H or alkyl of from 1 to about 6 carbon atoms; X= alky!, aryl, or alkaryl diradical connecting group of 0 to about 9 carbon atoms; a' is 0 to about 100;b' is 0 to about 100;c' is 0 to about 100; d' is 0 to about 100;Y is H, or metal ion; and (ii) one or more additional monomers (H) selected from the group consisting of acrylic acid/acrylate, methacrylic acid/methacrylate, acrylamides, vinyl acetate and styrene, which are copolymerizable with (I); and (iii) a cross-linking agent (III), capable of copolymerizing with (I) and (II).
摘要翻译：本发明涉及一种网络组合物，其反应产物为：（I）选自[CH 2 = C（R 3）C（O）OX 3（C 2 H 4 O）b的至少一种阴离子可聚合烯属不饱和单体（I）（C 3 H 6 O）c。（C 4 H 8，O）d] pP（O）（OY）q（OZ）r其中R 3 = H或1至约6个碳原子的烷基; X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a为0至约100; b为0至约100; c为0至约100; d为0至约100; q为0至约2; r为0〜2; p为1至约3，但受限于p + q + r = 3; Y和Z是H或金属离子; 其中R 3 = H或具有1至约6个碳原子的烷基;和（C 1 -C 4） X = 0至约9个碳原子的烷基，芳基或烷芳基双基连接基团; a'为0至约100; b'为0至约100; c'为0至约100; d'为0至约100; Y为H或金属离子; 和（ii）可与（I）共聚的一种或多种选自丙烯酸/丙烯酸酯，甲基丙烯酸/甲基丙烯酸酯，丙烯酰胺，乙酸乙烯酯和苯乙烯的另外的单体（H）。和（iii）能够与（I）和（II）共聚的交联剂（III）。

10. 发明申请

WO2010091932A1 FIN AND FINFET FORMATION BY ANGLED ION IMPLANTATION 审中-公开
标题翻译：通过离子植入形成的FIN和FINFET
公开(公告)号：WO2010091932A1
公开(公告)日：2010-08-19
申请号：PCT/EP2010/050727
申请日：2010-01-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , DORIS, Bruce , CHENG, Kangguo , WANG, Geng
发明人： DORIS, Bruce , CHENG, Kangguo , WANG, Geng
IPC分类号： H01L21/336 , H01L21/033
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/26586 , H01L21/3086 , H01L21/3088 , H01L21/32134 , H01L21/32135 , H01L29/66795 , Y10S438/942 , Y10S438/947
摘要： A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sub lithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension.
摘要翻译：通过提供衬底并在衬底上形成含半导体的层来形成半导体器件。然后在半导体含有层顶上形成具有多个开口的掩模，其中掩模的多个开口中的相邻开口被最小特征尺寸分开。此后，进行成角度的离子注入以将掺杂剂引入到半导体含有层的第一部分，其中基本上不含掺杂剂的剩余部分存在于掩模下方。包含掺杂剂的含半导体层的第一部分被选择性地除去基本上不含掺杂剂的半导体含有层的剩余部分，以提供亚光刻尺寸的图案，并且将图案转移到衬底中以提供亚光刻尺寸的翅片结构。

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