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1. 发明申请

WO2010059367A2 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
标题翻译：使用直接去除法在绝缘体结构上制造半导体的方法和设备
公开(公告)号：WO2010059367A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/062531
申请日：2009-10-29
申请人： CORNING INCORPORATED , CHEREKDJIAN, Sarko , CITES, Jeffrey S , COUILLARD, James G , MASCHMEYER, Richard O , MOORE, Michael J. , USENKO, Alex
发明人： CHEREKDJIAN, Sarko , CITES, Jeffrey S , COUILLARD, James G , MASCHMEYER, Richard O , MOORE, Michael J. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：提供用于形成绝缘体上半导体（SOI）结构的方法和设备，所述SOI结构包括使施主半导体晶片的注入表面经受离子注入步骤以在横截面限定中产生弱化层供体半导体晶片的剥离层; 以及在所述离子注入步骤之前，期间或之后使所述施主半导体晶片经历空间变化步骤，使得所述弱化层的至少一个参数在X轴和Y轴中的至少一个中在所述弱化层上在空间上变化方向。

2. 发明申请

WO2012012138A2 METHOD FOR FINISHING SILICON ON INSULATOR SUBSTRATES 审中-公开
标题翻译：绝缘子基体上的硅填充方法
公开(公告)号：WO2012012138A2
公开(公告)日：2012-01-26
申请号：PCT/US2011/042168
申请日：2011-06-28
申请人： CORNING INCORPORATED , USENKO, Alex
发明人： USENKO, Alex
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/02238 , H01L21/30604 , H01L21/76254
摘要： A process for finishing an as transferred layer on a semiconductor-on-insulator structure or a semiconductor-on-glass (or other insulator substrate) structure is provided by removing the damaged surface portion of a semiconductor layer while a leaving a smooth, finished semiconductor film on the glass. The damaged surface layer is treated with an oxygen plasma to oxidize the damaged layer and convert the damaged layer into an oxide layer. The oxide layer is then stripped in a wet bath, such as hydrofluoric acid bath, thereby removing the damaged portion of the semiconductor layer. The damaged layer may be an ion implantation damaged layer resulting from a thin film transfer processes used to make the semiconductor-on-insulator structure or the semiconductor-on-glass structure.
摘要翻译：通过去除半导体层损坏的表面部分，同时留下光滑的成品半导体，提供了在绝缘体上半导体结构或玻璃上半导体（或其它绝缘体）结构上完成转印层的工艺玻璃上的电影。用氧等离子体处理受损表面层，以氧化受损层并将损伤层转化为氧化物层。然后将氧化物层在诸如氢氟酸浴的湿浴中汽提，从而去除半导体层的损坏部分。受损层可以是由用于制造绝缘体上半导体结构或玻璃半导体结构的薄膜转移工艺产生的离子注入损伤层。

3. 发明申请

WO2010099045A1 DEFECT HEALING IN SEMICONDUCTOR ON INSULATOR BY AMORPHIZATION AND REGROWTH 审中-公开
标题翻译：绝缘子半导体器件通过微分和反射的缺陷处理
公开(公告)号：WO2010099045A1
公开(公告)日：2010-09-02
申请号：PCT/US2010/024746
申请日：2010-02-19
申请人： CORNING INCORPORATED , USENKO, Alex
发明人： USENKO, Alex
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/02521 , H01L21/02667
摘要： Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; subjecting the at least one cleaved surface to an amorphization ion implantation process at a dose sufficient to amorphize at least some depth of the semiconductor material below the at least one cleaved surface; and re-growing the amorphized portion of the semiconductor material into a substantially single crystalline semiconductor layer using solid phase epitaxial re-growth
摘要翻译：用于制造玻璃（SOG）半导体结构的方法和装置包括：使施主半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 使所述至少一个切割的表面经受非晶化离子注入工艺，剂量足以将所述半导体材料的至少一些深度非晶化至所述至少一个切割表面下方; 并且使用固相外延再生长将半导体材料的非晶化部分再生长成基本单晶半导体层

4. 发明申请

WO2010059361A2 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
公开(公告)号：WO2010059361A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/062504
申请日：2009-10-29
申请人： CORNING INCORPORATED , CHEREKDJIAN, Sarko , CITES, Jeffrey, S. , COUILLARD, James, G. , MASCHMEYER, Richard, O. , MOORE, Michael, J. , USENKO, Alex
发明人： CHEREKDJIAN, Sarko , CITES, Jeffrey, S. , COUILLARD, James, G. , MASCHMEYER, Richard, O. , MOORE, Michael, J. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

5. 发明申请

WO2012012138A3 METHOD FOR FINISHING SILICON ON INSULATOR SUBSTRATES 审中-公开
标题翻译：在绝缘基板上涂覆硅的方法
公开(公告)号：WO2012012138A3
公开(公告)日：2012-07-12
申请号：PCT/US2011042168
申请日：2011-06-28
申请人： CORNING INC , USENKO ALEX
发明人： USENKO ALEX
IPC分类号： H01L21/762 , H01L21/306 , H01L21/316
CPC分类号： H01L21/3065 , H01L21/02238 , H01L21/30604 , H01L21/76254
摘要： A process for finishing an as transferred layer on a semiconductor-on-insulator structure or a semiconductor-on-glass (or other insulator substrate) structure is provided by removing the damaged surface portion of a semiconductor layer while a leaving a smooth, finished semiconductor film on the glass. The damaged surface layer is treated with an oxygen plasma to oxidize the damaged layer and convert the damaged layer into an oxide layer. The oxide layer is then stripped in a wet bath, such as hydrofluoric acid bath, thereby removing the damaged portion of the semiconductor layer. The damaged layer may be an ion implantation damaged layer resulting from a thin film transfer processes used to make the semiconductor-on-insulator structure or the semiconductor-on-glass structure.
摘要翻译：通过去除半导体层的受损表面部分来提供在绝缘体上半导体结构或玻璃上半导体（或其他绝缘体衬底）结构上作为转移层的工艺，同时留下光滑的成品半导体玻璃上的电影。受损表面层用氧等离子体处理以氧化损伤层并将损伤层转化为氧化物层。然后将氧化物层在诸如氢氟酸浴的湿浴中汽提，由此除去半导体层的受损部分。损伤层可以是由用于制造绝缘体上半导体结构或玻璃上半导体结构的薄膜转移工艺产生的离子注入损伤层。

6. 发明申请

WO2012071365A2 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF A SEMICONDUCTING MATERIAL USING THERMALLY ACTIVE MOLDS 审中-公开
标题翻译：使用热活性物质制造半导体材料的不相关物品的方法
公开(公告)号：WO2012071365A2
公开(公告)日：2012-05-31
申请号：PCT/US2011/061758
申请日：2011-11-22
申请人： CORNING INCORPORATED , POTAPENKO, Sergey , SUMAN, Balram , TIAN, Lili , USENKO, Alex
发明人： POTAPENKO, Sergey , SUMAN, Balram , TIAN, Lili , USENKO, Alex
IPC分类号： H01L31/18 , H01L21/22
CPC分类号： C30B11/002 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, T surface , and a core temperature, T core , whererin T surface > T core .
摘要翻译：本发明涉及使用具有外表面温度Tsurface和核心温度Tcore，其中T表面> Tcore的热活性模具制造无支撑物品的半导体材料的方法。

7. 发明申请

WO2010059361A3 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
标题翻译：使用直接去除法在绝缘体结构上制造半导体的方法和设备
公开(公告)号：WO2010059361A3
公开(公告)日：2010-08-12
申请号：PCT/US2009062504
申请日：2009-10-29
申请人： CORNING INC , CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
发明人： CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：提供了用于形成绝缘体上半导体（SOI）结构的方法和设备，其包括使施主半导体晶片的注入表面经受离子注入步骤以在限定供体半导体晶片的剥离层的横截面中产生弱化层 ; 以及在所述离子注入步骤之前，期间或之后使所述施主半导体晶片经历空间变化步骤，使得所述弱化层的至少一个参数在X轴和Y轴中的至少一个中在所述弱化层上在空间上变化方向。

8. 发明申请

WO2016149113A1 THERMALLY STABLE CHARGE TRAPPING LAYER FOR USE IN MANUFACTURE OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES 审中-公开
标题翻译：用于制造半导体绝缘体结构的热稳定电荷捕获层
公开(公告)号：WO2016149113A1
公开(公告)日：2016-09-22
申请号：PCT/US2016/022089
申请日：2016-03-11
申请人： SUNEDISON SEMICONDUCTOR LIMITED , USENKO, Alex
发明人： USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L21/7627 , H01L21/0203 , H01L21/02238 , H01L21/02258 , H01L21/76254 , H01L21/76286 , H01L27/1203
摘要： A single crystal semiconductor handle substrate for use in the manufacture of semiconductor-on-insulator (e.g., silicon-on-insulator (SOI)) structure is etched to form a porous layer in the front surface region of the wafer. The etched region is oxidized and then filled with a semiconductor material, which may be polycrystalline or amorphous. The surface is polished to render it bondable to a semiconductor donor substrate. Layer transfer is performed over the polished surface thus creating semiconductor-on-insulator (e.g., silicon-on-insulator (SOI)) structure having 4 layers: the handle substrate, the composite layer comprising filled pores, a dielectric layer (e.g., buried oxide), and a device layer. The structure can be used as initial substrate in fabricating radiofrequency chips. The resulting chips have suppressed parasitic effects, particularly, no induced conductive channel below the buried oxide.
摘要翻译：蚀刻用于制造绝缘体上半导体（例如，绝缘体上硅（SOI））结构的单晶半导体处理衬底，以在晶片的前表面区域中形成多孔层。蚀刻区域被氧化，然后用半导体材料填充，半导体材料可以是多晶的或非晶的。该表面被抛光以使其能够与半导体供体基板结合。在抛光表面上进行层转移，从而产生绝缘体上半导体（例如，绝缘体上硅（SOI））结构，其具有4层：手柄衬底，复合层包括填充孔，电介质层氧化物）和器件层。该结构可用作制造射频芯片的初始衬底。所得到的芯片抑制了寄生效应，特别是在掩埋氧化物之下没有诱导的导电通道。

9. 发明申请

WO2012071365A3 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF A SEMICONDUCTING MATERIAL USING THERMALLY ACTIVE MOLDS 审中-公开
标题翻译：使用热活性物质制造半导体材料的不相关物品的方法
公开(公告)号：WO2012071365A3
公开(公告)日：2013-04-11
申请号：PCT/US2011061758
申请日：2011-11-22
申请人： CORNING INC , POTAPENKO SERGEY , SUMAN BALRAM , TIAN LILI , USENKO ALEX
发明人： POTAPENKO SERGEY , SUMAN BALRAM , TIAN LILI , USENKO ALEX
IPC分类号： C30B35/00 , B28B1/38
CPC分类号： C30B11/002 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, Tsurface, and a core temperature, Tcore, whererin Tsurface > Tcore.
摘要翻译：本发明涉及使用具有外表面温度Tsurface和核心温度Tcore，其中T表面> Tcore的热活性模具制造无支撑物品的半导体材料的方法。

10. 发明申请

WO2012003161A1 OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING 审中-公开
标题翻译：用于制备粘合表面的氧气等离子体转化方法
公开(公告)号：WO2012003161A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/042078
申请日：2011-06-28
申请人： CORNING INCORPORATED , CHUANG, Ta Ko , USENKO, Alex
发明人： CHUANG, Ta Ko , USENKO, Alex
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/0206 , H01L21/022 , H01L21/02326 , H01L21/76254
摘要： A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate
摘要翻译：一种用于制备不能使其粘合到另一材料的表面上的材料的表面的方法。用氧等离子体处理半导体晶片的非接合表面以氧化晶片的表面，并使表面更平滑，亲水并且可粘合到另一衬底（例如玻璃衬底）的表面上。半导体晶片可以具有由诸如玻璃基板之类的不能与另一基板结合的诸如SixNy或SiNxOy的材料形成的阻挡层。在这种情况下，氧等离子体处理将阻挡层的表面转化为诸如SiO 2的氧化物，使表面平滑化，并使表面亲水且可粘合到另一基板如玻璃基板的表面。转换的氧化物层可以用酸从阻挡层或半导体晶片剥离，以便去除阻挡层或半导体晶片的表面上的污染，剥离的表面可以进行第二氧等离子体处理以进一步平滑表面，并使表面亲水并粘合到另一基底的表面

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