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1. 发明申请

WO2010059367A3 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
标题翻译：使用方向分解生产绝缘体结构的半导体的方法和装置
公开(公告)号：WO2010059367A3
公开(公告)日：2010-08-05
申请号：PCT/US2009062531
申请日：2009-10-29
申请人： CORNING INC , CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
发明人： CHEREKDJIAN SARKO , CITES JEFFREY S , COUILLARD JAMES G , MASCHMEYER RICHARD O , MOORE MICHAEL J , USENKO ALEX
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤以在限定施主半导体晶片的剥离层的横截面上产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化方向。

2. 发明申请

WO2010059367A2 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
标题翻译：使用直接去除法在绝缘体结构上制造半导体的方法和设备
公开(公告)号：WO2010059367A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/062531
申请日：2009-10-29
申请人： CORNING INCORPORATED , CHEREKDJIAN, Sarko , CITES, Jeffrey S , COUILLARD, James G , MASCHMEYER, Richard O , MOORE, Michael J. , USENKO, Alex
发明人： CHEREKDJIAN, Sarko , CITES, Jeffrey S , COUILLARD, James G , MASCHMEYER, Richard O , MOORE, Michael J. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：提供用于形成绝缘体上半导体（SOI）结构的方法和设备，所述SOI结构包括使施主半导体晶片的注入表面经受离子注入步骤以在横截面限定中产生弱化层供体半导体晶片的剥离层; 以及在所述离子注入步骤之前，期间或之后使所述施主半导体晶片经历空间变化步骤，使得所述弱化层的至少一个参数在X轴和Y轴中的至少一个中在所述弱化层上在空间上变化方向。

3. 发明申请

WO2007024549A2 SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER 审中-公开
标题翻译：具有沉积阻挡层的玻璃绝缘子上的半导体
公开(公告)号：WO2007024549A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/031726
申请日：2006-08-15
申请人： CORNING INCORPORATED , COUILLARD, James, G. , GADKAREE, Kishor, P.
发明人： COUILLARD, James, G. , GADKAREE, Kishor, P.
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are bonded together via electrolysis.
摘要翻译：方法和装置提供：绝缘体上硅结构，其包括：玻璃衬底; 一层半导体材料; 以及设置在玻璃基板和半导体材料之间的介于约60nm至约600nm之间的沉积的阻挡层，其中玻璃基板和半导体材料通过电解结合在一起。

4. 发明申请

WO2007024549A3 SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER 审中-公开
标题翻译：玻璃绝缘子与沉积障碍层的半导体
公开(公告)号：WO2007024549A3
公开(公告)日：2007-09-07
申请号：PCT/US2006031726
申请日：2006-08-15
申请人： CORNING INC , COUILLARD JAMES G , GADKAREE KISHOR P
发明人： COUILLARD JAMES G , GADKAREE KISHOR P
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are bonded together via electrolysis.
摘要翻译：方法和装置提供：绝缘体上硅结构，包括：玻璃基板; 一层半导体材料; 以及布置在玻璃基板和半导体材料之间的约60nm至约600nm之间的沉积阻挡层，其中玻璃基板和半导体材料通过电解结合在一起。

5. 发明申请

WO2005043585A2 OLED STRUCTURES WITH BARRIER LAYER AND STRAIN RELIEF 审中-公开
标题翻译：具有阻挡层和应变释放的OLED结构
公开(公告)号：WO2005043585A2
公开(公告)日：2005-05-12
申请号：PCT/US2004/032645
申请日：2004-10-01
申请人： CORNING INCORPORATED , COUILLARD, James, G
发明人： COUILLARD, James, G
IPC分类号： H01L
CPC分类号： H01L51/5253 , H01L51/52 , H01L2251/5338
摘要： An OLED structure includes a substantially flexible substrate, and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer substantially prevents contaminants from permeating a layer of organic material or the OLED structure. The barrier layer includes a glass layer that has certain components added or removed to improve its flexibility. The OLED structure may also include a substantially flexible substrate and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer includes a strain relief material. The strain relief material advantageously has at least one axis of orientation. Photonic or electronic components, or both could be substituted for the OLED.
摘要翻译： OLED结构包括基本上柔性的基板以及设置在基板和OLED结构之间的至少一个阻挡层。阻挡层基本上防止了污染物渗透到有机材料层或OLED结构中。阻挡层包括玻璃层，该玻璃层具有添加或去除的某些组分以提高其柔性。 OLED结构还可以包括基本上柔性的衬底以及设置在衬底和OLED结构之间的至少一个阻挡层。阻挡层包括应变消除材料。应变消除材料有利地具有至少一个取向轴线。光子或电子元件或两者都可以替代OLED。

6. 发明申请

WO2005029576A2 GLASS-BASED SOI STRUCTURES 审中-公开
标题翻译：基于玻璃的SOI结构
公开(公告)号：WO2005029576A2
公开(公告)日：2005-03-31
申请号：PCT/US2004004746
申请日：2004-02-17
申请人： CORNING INC , COUILLARD JAMES G , MACH JOSEPH F , GADKAREE KISHOR P
发明人： COUILLARD JAMES G , MACH JOSEPH F , GADKAREE KISHOR P
IPC分类号： H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007
摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
摘要翻译：提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的，并且优选具有小于1000℃的应变点，250℃下的电阻率小于或等于1016cm，并且包含正离子（例如碱或碱土离子），其可以响应于在升高的温度（例如，300-1000℃）下的电场而在玻璃或玻璃陶瓷内移动。半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。

7. 发明申请

WO2010059361A2 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 审中-公开
公开(公告)号：WO2010059361A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/062504
申请日：2009-10-29
申请人： CORNING INCORPORATED , CHEREKDJIAN, Sarko , CITES, Jeffrey, S. , COUILLARD, James, G. , MASCHMEYER, Richard, O. , MOORE, Michael, J. , USENKO, Alex
发明人： CHEREKDJIAN, Sarko , CITES, Jeffrey, S. , COUILLARD, James, G. , MASCHMEYER, Richard, O. , MOORE, Michael, J. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

8. 发明申请

WO2007142911A3 SEMICONDUCTOR ON INSULATOR STRUCTURE MADE USING RADIATION ANNEALING 审中-公开
公开(公告)号：WO2007142911A3
公开(公告)日：2007-12-13
申请号：PCT/US2007/012603
申请日：2007-05-24
申请人： CORNING INCORPORATED , COUILLARD, James, G. , LEHUEDE, Philippe , VALLON, Sophie, A.
发明人： COUILLARD, James, G. , LEHUEDE, Philippe , VALLON, Sophie, A.
IPC分类号： H01L21/268 , H01L21/762 , H01L21/00
摘要： Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

9. 发明申请

WO2007142911A2 SEMICONDUCTOR ON INSULATOR STRUCTURE MADE USING RADIATION ANNEALING 审中-公开
标题翻译：使用辐射退火制作绝缘体结构的半导体
公开(公告)号：WO2007142911A2
公开(公告)日：2007-12-13
申请号：PCT/US2007012603
申请日：2007-05-24
申请人： CORNING INC , COUILLARD JAMES G , LEHUEDE PHILIPPE , VALLON SOPHIE A
发明人： COUILLARD JAMES G , LEHUEDE PHILIPPE , VALLON SOPHIE A
IPC分类号： H01L21/762 , B23K26/00 , H01L21/268 , H01L21/324
CPC分类号： H01L21/268 , G02F2202/09 , G02F2202/104 , H01L21/302 , H01L21/324 , H01L21/3247 , H01L21/67115 , H01L21/7624 , H01L21/76254
摘要： Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.
摘要翻译：绝缘体上半导体（SOI）结构的系统和方法和产品，包括使至少一个未完成的表面进行激光退火处理。 SOI结构的制造还可以包括使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 将剥离层的注入表面粘合到绝缘体基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行激光退火处理。

10. 发明申请

WO2006007156A1 FABRICATION OF CRYSTALLINE MATERIALS OVER SUBSTRATES 审中-公开
标题翻译：晶体结构材料的制造
公开(公告)号：WO2006007156A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/017800
申请日：2005-05-19
申请人： CORNING INCORPORATED , COUILLARD, James, G , GADKAREE, Kishor, P , SHI, Youchun
发明人： COUILLARD, James, G , GADKAREE, Kishor, P , SHI, Youchun
IPC分类号： H01L21/20
CPC分类号： B82Y30/00 , B82Y40/00 , C03C17/3429 , C03C17/3482 , C03C17/3657 , C03C17/42 , C03C2218/152 , C03C2218/32 , C23C16/0272 , C30B7/005 , C30B25/18 , C30B29/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02667
摘要： A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.
摘要翻译：形成晶体或多晶层的方法包括提供衬底和在衬底上的图案化。该方法还包括提供成核材料并在成核材料上形成晶体层。设置在基板上的结晶材料可以是单晶或多晶的。

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