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    • 2. 发明申请
    • OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING
    • 用于制备粘合表面的氧气等离子体转化方法
    • WO2012003161A1
    • 2012-01-05
    • PCT/US2011/042078
    • 2011-06-28
    • CORNING INCORPORATEDCHUANG, Ta KoUSENKO, Alex
    • CHUANG, Ta KoUSENKO, Alex
    • H01L21/20H01L21/762
    • H01L21/2007H01L21/0206H01L21/022H01L21/02326H01L21/76254
    • A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate
    • 一种用于制备不能使其粘合到另一材料的表面上的材料的表面的方法。 用氧等离子体处理半导体晶片的非接合表面以氧化晶片的表面,并使表面更平滑,亲水并且可粘合到另一衬底(例如玻璃衬底)的表面上。 半导体晶片可以具有由诸如玻璃基板之类的不能与另一基板结合的诸如SixNy或SiNxOy的材料形成的阻挡层。 在这种情况下,氧等离子体处理将阻挡层的表面转化为诸如SiO 2的氧化物,使表面平滑化,并使表面亲水且可粘合到另一基板如玻璃基板的表面。 转换的氧化物层可以用酸从阻挡层或半导体晶片剥离,以便去除阻挡层或半导体晶片的表面上的污染,剥离的表面可以进行第二氧等离子体处理以进一步平滑表面, 并使表面亲水并粘合到另一基底的表面