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1. 发明申请

US20140011365A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20140011365A1
公开(公告)日：2014-01-09
申请号：US13590242
申请日：2012-08-21
申请人： Naoki YASUI , Norihiko IKEDA , Tooru ARAMAKI , Yasuhiro NISHIMORI
发明人： Naoki YASUI , Norihiko IKEDA , Tooru ARAMAKI , Yasuhiro NISHIMORI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32192 , H01J37/32082 , H01J37/32642 , H01L21/3065
摘要： To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.
摘要翻译：通过改善边缘排除区域的工作特性来提高加工均匀性。提供了一种等离子体处理装置，用于通过在供给处理气体的真空容器中产生等离子体并将其排出到预定压力并通过对放置在真空容器中的样品施加射频偏置来处理样品，其中a 在安装有晶片的样品台的凸部的外侧形成的台阶部布置有施加有射频偏置功率的导电射频环，并且在台阶部设置介电盖环，覆盖无线电所述盖环基本上阻挡从所述射频环对所述等离子体的射频功率的穿透，并且所述射频环顶面被设定为高于晶片顶面。

2. 发明申请

US20100043976A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100043976A1
公开(公告)日：2010-02-25
申请号：US12240293
申请日：2008-09-29
申请人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
发明人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J2237/2001
摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.
摘要翻译：等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给房间。

3. 发明申请

US20090214401A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20090214401A1
公开(公告)日：2009-08-27
申请号：US12437941
申请日：2009-05-08
申请人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
发明人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
IPC分类号： B01J19/08
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供给与供给的传送气体相同的气体的供给系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

4. 发明申请

US20120125890A1 PLASMA PROCESSING METHOD 失效
标题翻译：等离子体处理方法
公开(公告)号：US20120125890A1
公开(公告)日：2012-05-24
申请号：US13011070
申请日：2011-01-21
申请人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
发明人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
IPC分类号： C23F1/00 , B08B5/00
CPC分类号： H01J37/32816 , B08B7/0035 , H01J37/32834
摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要翻译：在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

5. 发明申请

US20100159704A1 METHOD FOR ETCHING A SAMPLE 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US20100159704A1
公开(公告)日：2010-06-24
申请号：US12396673
申请日：2009-03-03
申请人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
发明人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

6. 发明申请

US20130019626A1 Cooling Unit And Work Piece Conveying Equipment Using It 有权
标题翻译：冷却单元和工件输送设备使用它
公开(公告)号：US20130019626A1
公开(公告)日：2013-01-24
申请号：US13549703
申请日：2012-07-16
申请人： Takaya YAMADA , Yasuhiro NISHIMORI
发明人： Takaya YAMADA , Yasuhiro NISHIMORI
IPC分类号： F25D31/00
CPC分类号： B25J19/0054
摘要： An object is to provide a cooling unit which can reduce influence of radiation heat from a work piece having high temperature on members surrounding the work piece, prevent leak of coolant and vacuum leak, reduce cost, and prevent turning angle of a work piece conveying mechanism from being limited. The cooling unit is attached to the work piece conveying mechanism in the state that the outer wall part is in close contact with the to-be-cooled surface. The coolant stored in the lower space is evaporated by the heat transmitted from the to-be-cooled surface P via the outer wall part, and the to-be-cooled surface is cooled via the outer wall part by the heat of evaporation lost at the time of the evaporation of the coolant. The vapor in the lower space (coolant container) is discharged to the vacuum chamber by the vapor exhaust unit when the pressure of the vapor in the lower space reaches the fixed value or higher.
摘要翻译：本发明的目的是提供一种冷却单元，其可以降低来自具有高温的工件的辐射热对围绕工件的构件的影响，防止冷却剂的泄漏和真空泄漏，降低成本，并且防止工件输送机构的转动角度从有限。冷却单元在外壁部与待冷却表面紧密接触的状态下安装在工件输送机构上。存储在下部空间中的冷却剂被从被冷却表面P经由外壁部分传递的热量蒸发，并且被冷却的表面通过外壁部分被蒸发的热量所损失，冷却液蒸发的时间。当下部空间中的蒸汽压力达到固定值或更高时，下部空间中的蒸汽（冷却剂容器）通过蒸气排出单元排出到真空室。

7. 发明申请

US20100178415A1 METHOD FOR SEASONING PLASMA PROCESSING APPARATUS, AND METHOD FOR DETERMINING END POINT OF SEASONING 审中-公开
标题翻译：等离子体处理装置的方法和确定末端点的方法
公开(公告)号：US20100178415A1
公开(公告)日：2010-07-15
申请号：US12396699
申请日：2009-03-03
申请人： Yasuhiro NISHIMORI , Hiroshige UCHIDA , Masamichi SAKAGUCHI , Kousa HIROTA
发明人： Yasuhiro NISHIMORI , Hiroshige UCHIDA , Masamichi SAKAGUCHI , Kousa HIROTA
IPC分类号： B05D1/00
CPC分类号： H01J37/32963 , B08B7/00 , H01J37/32192 , H01J37/32862
摘要： The invention provides a method for determining an end point of seasoning of a plasma processing apparatus capable of reducing the time required for seasoning after performing wet cleaning and determining the optimum end point of seasoning with superior repeatability. The present method comprises, after performing wet cleaning (S501) of the plasma processing apparatus, using a processing gas containing SF6 as processing gas and applying an RF bias double that of mass production conditions to perform seasoning (S502), acquiring emission data of SiF and Ar during plasma processing using test conditions using SiF and Ar gases (S503), determining whether the computed value of emission intensities during seasoning is equal to or smaller than the computed value of emission intensities during stable mass production (S504), and determining the endpoint of the seasoning process when the value is determined to be equal or smaller.
摘要翻译：本发明提供了一种用于确定等离子体处理装置的调味终点的方法，其能够在进行湿清洗之后减少调味所需的时间，并以优异的重复性确定调味料的最佳终点。本方法包括在进行等离子体处理装置的湿式清洗（S501）后，使用含有SF6的处理气体作为处理气体，并施加大量生产条件的RF偏置倍以进行调味（S502），获取SiF的发射数据和Ar，使用SiF和Ar气体的测试条件（S503）进行等离子体处理（S503），确定在稳定批量生产期间计算出的发光强度值是否等于或小于计算出的发光强度值（S504），并确定确定该值被确定为等于或小于调味过程的终点。

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