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1. 发明授权

US08552523B2 Semiconductor device and method for manufacturing 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08552523B2
公开(公告)日：2013-10-08
申请号：US13206380
申请日：2011-08-09
申请人： Fumiaki Toyama , Fumihiko Inoue
发明人： Fumiaki Toyama , Fumihiko Inoue
IPC分类号： H01L21/70
CPC分类号： H01L27/11565 , H01L21/28282 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for manufacturing a semiconductor device is disclosed. The method includes forming a shallow trench isolation (STI) region extending in a first direction on a semiconductor substrate, forming a mask layer extending in a second direction that intersects with the first direction on the semiconductor substrate and forming a trench on the semiconductor substrate by using the STI region and the mask layer as masks. In addition, the method includes forming a charge storage layer so as to cover the trench and forming a conductive layer on side surfaces of the trench and the mask layer. Word lines are formed from the conductive layer on side surfaces of the trench that oppose in the first direction by etching. The word lines are separated from each other and extend in the second direction.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括形成在半导体衬底上沿第一方向延伸的浅沟槽隔离（STI）区域，形成在半导体衬底上沿与第一方向相交的第二方向延伸的掩模层，并在半导体衬底上形成沟槽，并通过使用STI区域和掩模层作为掩模。此外，该方法包括形成电荷存储层以覆盖沟槽并在沟槽和掩模层的侧表面上形成导电层。字线由通过蚀刻在第一方向相对的沟槽的侧表面上的导电层形成。字线彼此分离并在第二方向上延伸。

2. 发明授权

US07994007B2 Semiconductor device and method for manufacturing 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994007B2
公开(公告)日：2011-08-09
申请号：US12337461
申请日：2008-12-17
申请人： Fumiaki Toyama , Fumihiko Inoue
发明人： Fumiaki Toyama , Fumihiko Inoue
IPC分类号： H01L21/336
CPC分类号： H01L27/11565 , H01L21/28282 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for manufacturing a semiconductor device is disclosed. The method includes forming a shallow trench isolation (STI) region extending in a first direction on a semiconductor substrate, forming a mask layer extending in a second direction that intersects with the first direction on the semiconductor substrate and forming a trench on the semiconductor substrate by using the STI region and the mask layer as masks. In addition, the method includes forming a charge storage layer so as to cover the trench and forming a conductive layer on side surfaces of the trench and the mask layer. Word lines are formed from the conductive layer on side surfaces of the trench that oppose in the first direction by etching. The word lines are separated from each other and extend in the second direction.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括形成在半导体衬底上沿第一方向延伸的浅沟槽隔离（STI）区域，形成在半导体衬底上沿与第一方向相交的第二方向延伸的掩模层，并在半导体衬底上形成沟槽，并通过使用STI区域和掩模层作为掩模。此外，该方法包括形成电荷存储层以覆盖沟槽并在沟槽和掩模层的侧表面上形成导电层。字线由通过蚀刻在第一方向相对的沟槽的侧表面上的导电层形成。字线彼此分离并在第二方向上延伸。

3. 发明授权

US07981746B2 Semiconductor device and method for manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07981746B2
公开(公告)日：2011-07-19
申请号：US12341874
申请日：2008-12-22
申请人： Fumiaki Toyama , Fumihiko Inoue
发明人： Fumiaki Toyama , Fumihiko Inoue
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/28273 , H01L27/11526 , H01L27/11573
摘要： The present invention provides a semiconductor device including a semiconductor substrate provided with a trench section; a tunnel insulating film covering an inner surface of the trench section; a trap layer provided in contact with the tunnel insulating film on an inner surface of an upper portion of the trench section; a top insulating film provided in contact with the trap layer; a gate electrode embedded in the trench section, and provided in contact with the tunnel insulating film at a lower portion of the trench section and in contact with the top insulating film at the upper portion of the trench section, in which the trap layer and the top insulating film, in between the lower portion of the trench section and the upper portion of the trench section, extend and protrude from both sides of the trench section so as to be embedded in the gate electrode, and a method for manufacturing thereof.
摘要翻译：本发明提供一种半导体器件，其包括设置有沟槽部分的半导体衬底; 覆盖所述沟槽部的内表面的隧道绝缘膜; 在所述沟槽部的上部的内表面上设置与所述隧道绝缘膜接触的陷阱层; 设置成与所述捕获层接触的顶部绝缘膜; 栅电极，其嵌入在沟槽部中，并且与沟道绝缘膜在沟槽部的下部接触并与沟槽部的上部的顶部绝缘膜接触而设置，其中阱层和在沟槽部分的下部和沟槽部分的上部之间的顶部绝缘膜从沟槽部分的两侧延伸并突出以嵌入在栅电极中，以及其制造方法。

4. 发明授权

US07932125B2 Self-aligned charge storage region formation for semiconductor device 有权
标题翻译：用于半导体器件的自对准电荷存储区域形成
公开(公告)号：US07932125B2
公开(公告)日：2011-04-26
申请号：US12183756
申请日：2008-07-31
申请人： Fumihiko Inoue
发明人： Fumihiko Inoue
IPC分类号： H01L21/00
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/4234
摘要： Devices and methods for forming self-aligned charge storage regions are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a layer of a nitride film stacked between two oxide films on a semiconductor substrate, and forming a gate electrode on the layer of the nitride film stacked between the two oxide films. In addition, the method comprises removing side portions of the nitride film such that a central portion of the nitride film below a center portion of the gate electrode remains, oxidizing the central portion of the nitride film, and forming charge storage layers in the side portions of the nitride film, where the charge storage layers are separated by the central portion of the nitride film.
摘要翻译：公开了用于形成自对准电荷存储区域的装置和方法。在一个实施例中，制造半导体器件的方法包括：在半导体衬底上形成层叠在两个氧化物膜之间的氮化物膜层，并在叠置在两个氧化物膜之间的氮化膜的层上形成栅电极。此外，该方法包括去除氮化物膜的侧面部分，使得在栅极电极的中心部分之下的氮化物膜的中心部分残留，氧化氮化物膜的中心部分，并且在侧部形成电荷存储层的氮化物膜，其中电荷存储层被氮化膜的中心部分分开。

5. 发明授权

US07871896B2 Precision trench formation through oxide region formation for a semiconductor device 有权
标题翻译：通过半导体器件的氧化物区形成形成精密沟槽
公开(公告)号：US07871896B2
公开(公告)日：2011-01-18
申请号：US12134087
申请日：2008-06-05
申请人： Fumihiko Inoue , Takayuki Maruyama , Tomohiro Watanabe
发明人： Fumihiko Inoue , Takayuki Maruyama , Tomohiro Watanabe
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

6. 发明授权

US07838406B2 SONOS-NAND device having a storage region separated between cells 有权
标题翻译：具有在单元之间分离的存储区域的SONOS-NAND装置
公开(公告)号：US07838406B2
公开(公告)日：2010-11-23
申请号：US12343998
申请日：2008-12-24
申请人： Takayuki Maruyama , Fumihiko Inoue
发明人： Takayuki Maruyama , Fumihiko Inoue
IPC分类号： H01L21/3205
CPC分类号： H01L27/11565 , H01L21/28282 , H01L27/11568 , H01L29/66833
摘要： The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.
摘要翻译：本发明是一种半导体器件，包括具有沟槽的半导体衬底，设置在沟槽的侧表面上的第一绝缘膜，与设置在沟槽中的第一绝缘膜不同的材料的第二绝缘膜，线延伸以与半导体衬底上方的沟槽相交;栅极绝缘膜，其不同于第一绝缘膜的材料的栅极绝缘膜，该第一绝缘膜在字线的延伸方向上被沟槽分隔，并且设置在该字线的宽度方向上的中心区域的下方字线和电荷存储层，并且在字线的宽度方向上的两端设置用于包围栅极绝缘膜的电荷存储层及其制造方法。

7. 发明申请

US20090032864A1 SELF-ALIGNED CHARGE STORAGE REGION FORMATION FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的自对准充电存储区域形成
公开(公告)号：US20090032864A1
公开(公告)日：2009-02-05
申请号：US12183756
申请日：2008-07-31
申请人： Fumihiko INOUE
发明人： Fumihiko INOUE
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/4234
摘要： Devices and methods for forming self-aligned charge storage regions are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a layer of a nitride film stacked between two oxide films on a semiconductor substrate, and forming a gate electrode on the layer of the nitride film stacked between the two oxide films. In addition, the method comprises removing side portions of the nitride film such that a central portion of the nitride film below a center portion of the gate electrode remains, oxidizing the central portion of the nitride film, and forming charge storage layers in the side portions of the nitride film, where the charge storage layers are separated by the central portion of the nitride film.
摘要翻译：公开了用于形成自对准电荷存储区域的装置和方法。在一个实施例中，制造半导体器件的方法包括：在半导体衬底上形成层叠在两个氧化物膜之间的氮化物膜层，并在叠置在两个氧化物膜之间的氮化膜的层上形成栅电极。此外，该方法包括去除氮化物膜的侧面部分，使得在栅极电极的中心部分之下的氮化物膜的中心部分残留，氧化氮化物膜的中心部分，并且在侧部形成电荷存储层的氮化物膜，其中电荷存储层被氮化膜的中心部分分开。

8. 发明申请

US20080305614A1 PRECISION TRENCH FORMATION FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的精密成型
公开(公告)号：US20080305614A1
公开(公告)日：2008-12-11
申请号：US12134087
申请日：2008-06-05
申请人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
发明人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

9. 发明授权

US06251743B1 Method of liquid treatment of microstructures comprising bendable structural members 失效
标题翻译：液体处理包括可弯曲结构构件的微结构的方法
公开(公告)号：US06251743B1
公开(公告)日：2001-06-26
申请号：US09071991
申请日：1998-05-05
申请人： Motoo Nakano , Hiroshi Nomura , Masaya Katayama , Toshimi Ikeda , Fumihiko Inoue , Junichi Ishikawa , Masahiro Kuwamura
发明人： Motoo Nakano , Hiroshi Nomura , Masaya Katayama , Toshimi Ikeda , Fumihiko Inoue , Junichi Ishikawa , Masahiro Kuwamura
IPC分类号： H01L2120
CPC分类号： B81B3/0005 , B81C1/0092 , H01L21/02063 , H01L28/87 , Y10T428/24744 , Y10T428/24942 , Y10T428/26 , Y10T428/8305
摘要： Microstructures, including a plurality of spaced structural members which are bendable under an external force, undergo a treating method using a first treating liquid, to prevent permanent deformation, by removing the microstructure from the first treating liquid to an environment having a pressure less than atmospheric pressure; or moving the microstructure from the first treating liquid to a second treating liquid having a smaller surface tension than the first treating liquid, and then removing the microstructure from the second liquid; or drying the microstructure removed from the first treating liquid by exposing same to a liquid vapor having a smaller surface tension than the first treating liquid; or removing the microstructure from the first treating liquid to the atmosphere, and drying the microstructure using an energy beam of high intensity or an ultrasonic wave.
摘要翻译：包括可在外力下弯曲的多个间隔结构构件的微结构经受使用第一处理液的处理方法，以通过将微结构从第一处理液移除到压力小于大气压的环境来防止永久变形压力; 或将微结构从第一处理液移动到具有比第一处理液低的表面张力的第二处理液，然后从第二液体中除去微结构; 或者通过将从第一处理液体除去的微细结构干燥到具有比第一处理液体更小的表面张力的液体蒸气; 或将第一处理液体的显微组织移除到大气中，并使用高强度能量束或超声波干燥微结构。

10. 发明授权

US09263249B2 Method and apparatus for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和设备
公开(公告)号：US09263249B2
公开(公告)日：2016-02-16
申请号：US12166290
申请日：2008-07-01
申请人： Watanabe Tomohiro , Fumihiko Inoue
发明人： Watanabe Tomohiro , Fumihiko Inoue
IPC分类号： H01L21/31 , H01L21/469 , H01L21/28 , H01L21/67 , H01L21/02 , H01L29/792
CPC分类号： H01L21/02057 , H01L21/28282 , H01L21/67028 , H01L29/7923
摘要： The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.
摘要翻译：本发明涉及一种用于制造半导体器件的方法和装置，包括步骤S22以在半导体晶片的正面上形成绝缘膜，半导体晶片是要形成半导体元件的表面和背面即与前表面相对的表面，步骤S26通过在半导体晶片的背面上选择性地提供第一化学物质来除去形成在背面上的绝缘膜，以及步骤S30，通过以下步骤除去形成在前表面上的绝缘膜：同时将多个半导体晶片浸入第二种化学品中。

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