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1. 发明授权

US08623491B2 Ultrathin magnesium nanoblades 有权
标题翻译：超薄镁纳米薄片
公开(公告)号：US08623491B2
公开(公告)日：2014-01-07
申请号：US13617249
申请日：2012-09-14
申请人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
发明人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
IPC分类号： B32B7/00 , B01J23/00 , B01J23/42 , B01J23/44
CPC分类号： C01B3/0084 , B22F1/0018 , B22F2001/0033 , B82Y30/00 , C01B3/0026 , C23C14/16 , C23C14/226 , C23C14/24 , C30B23/00 , C30B29/02 , C30B29/60 , Y02E60/327 , Y10T428/23993 , Y10T428/24174
摘要： A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.
摘要翻译：纳米结构包括多个金属纳米棒，其位于基底上的一个边缘。多个金属纳米棒中的每一个具有大的表面积与质量比，并且宽度小于长度。一种储存氢的方法包括用储氢催化剂涂覆多个镁纳米薄片并通过与多个镁纳米薄层化学形成氢化镁来储存氢。

2. 发明授权

US07244670B2 Enhanced step coverage of thin films on patterned substrates by oblique angle PVD 有权
标题翻译：通过斜角PVD增强图案化基板上的薄膜的阶跃覆盖
公开(公告)号：US07244670B2
公开(公告)日：2007-07-17
申请号：US10872083
申请日：2004-06-18
申请人： Tansel Karabacak , Toh-Ming Lu , John Robert Barthel
发明人： Tansel Karabacak , Toh-Ming Lu , John Robert Barthel
IPC分类号： H01L21/20 , H01L21/31 , C23C14/00
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/505 , H01L21/2855
摘要： A method and an apparatus for fabricating an integrated circuit entail directing a vapor flux toward a substrate surface from a plurality of directions associated with a plurality of azimuth angles, and selecting a deposition angle of the vapor flux, relative to a normal incidence, to obtain a substantially conformal film. The surface feature can be associated with, for example, one or more vias and/or one or more trenches.
摘要翻译：用于制造集成电路的方法和装置需要从与多个方位角相关联的多个方向将蒸汽通量引向衬底表面，并且相对于法向入射选择蒸气通量的沉积角度，以获得基本上保形膜。表面特征可以与例如一个或多个通孔和/或一个或多个沟槽相关联。

3. 发明申请

US20060099819A1 Low dielectric constant compositions and methods of use thereof 审中-公开
标题翻译：低介电常数组合物及其使用方法
公开(公告)号：US20060099819A1
公开(公告)日：2006-05-11
申请号：US11219211
申请日：2005-09-02
申请人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
发明人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
IPC分类号： H01L21/31
CPC分类号： H01L21/02123 , H01L21/02282 , H01L21/3121
摘要： Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within an integrated circuit.
摘要翻译：公开了低介电常数组合物及其在集成电路中的使用方法。低电介质组合物衍生自碳硅烷聚合物和含有嵌入的硅或二环丁烷环的低聚物，并且在加热诱导交联之后，可以用作集成电路内的层间电介质以及覆盖层。

4. 发明授权

US6022595A Increase of deposition rate of vapor deposited polymer by electric field 失效
标题翻译：通过电场提高气相沉积聚合物的沉积速率
公开(公告)号：US6022595A
公开(公告)日：2000-02-08
申请号：US792044
申请日：1997-01-31
申请人： John F. McDonald , Toh-Ming Lu , Bin Wang , Guang Rong Yang
发明人： John F. McDonald , Toh-Ming Lu , Bin Wang , Guang Rong Yang
IPC分类号： B05D1/00 , B05D7/24 , C23C16/44 , C08J7/06
CPC分类号： B05D1/60 , C23C16/44 , B05D1/007
摘要： A method of depositing a polymer film onto a semiconductor wafer is provided which includes the steps of connecting the wafer to one terminal of a voltage source, connecting an electrode to an other pole of the voltage source and placing the electrode and substrate in superposed orientation to form a parallel plate capacitor, wherein an electric field is produced between the electrode and substrate. The parallel plate capacitor is placed in a chamber where pressure andc temperature are maintained at predetermined levels and gaseous monomers of the desired film to be polymerized are introduced into the chamber. The gaseous monomers are then permitted to flow between the electrode and wafer while the voltage of the electric field is maintained at a level sufficient to polarize the monomers without breaking their chemical bonds wherein the polarized monomers react to form a polymer film on the wafer at an enhanced rate.
摘要翻译：提供了一种在半导体晶片上沉积聚合物膜的方法，其包括以下步骤：将晶片连接到电压源的一个端子，将电极连接到电压源的另一个极，并将电极和衬底放置成叠置的方向形成平行板电容器，其中在电极和基板之间产生电场。将平行板电容器放置在压力和温度保持在预定水平的室中，并将待聚合的所需膜的气态单体引入室中。然后允许气态单体在电极和晶片之间流动，同时电场的电压保持在足以使单体极化的水平，而不破坏其化学键，其中极化单体在晶片上反应形成聚合物膜，增加率。

5. 发明申请

US20130065753A1 ULTRATHIN MAGNESIUM NANOBLADES 有权
标题翻译：超声波纳米颗粒
公开(公告)号：US20130065753A1
公开(公告)日：2013-03-14
申请号：US13617249
申请日：2012-09-14
申请人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
发明人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
IPC分类号： B32B33/00 , B01J23/44 , B01J23/22 , B01J23/20 , B01J23/75 , B01J23/42 , B82Y30/00
CPC分类号： C01B3/0084 , B22F1/0018 , B22F2001/0033 , B82Y30/00 , C01B3/0026 , C23C14/16 , C23C14/226 , C23C14/24 , C30B23/00 , C30B29/02 , C30B29/60 , Y02E60/327 , Y10T428/23993 , Y10T428/24174
摘要： A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.
摘要翻译：纳米结构包括多个金属纳米棒，其位于基底上的一个边缘。多个金属纳米棒中的每一个具有大的表面积与质量比，并且宽度小于长度。一种储存氢的方法包括用储氢催化剂涂覆多个镁纳米薄片并通过与多个镁纳米薄层化学形成氢化镁来储存氢。

6. 发明授权

US08282993B2 Ultrathin magnesium nanoblades 有权
标题翻译：超薄镁纳米薄片
公开(公告)号：US08282993B2
公开(公告)日：2012-10-09
申请号：US12594047
申请日：2008-03-26
申请人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
发明人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
IPC分类号： C23C16/00 , B32B7/00 , B01J23/00 , B01J23/44
CPC分类号： C01B3/0084 , B22F1/0018 , B22F2001/0033 , B82Y30/00 , C01B3/0026 , C23C14/16 , C23C14/226 , C23C14/24 , C30B23/00 , C30B29/02 , C30B29/60 , Y02E60/327 , Y10T428/23993 , Y10T428/24174
摘要： A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.
摘要翻译：纳米结构包括多个金属纳米棒，其位于基底上的一个边缘。多个金属纳米棒中的每一个具有大的表面积与质量比，并且宽度小于长度。一种储存氢的方法包括用储氢催化剂涂覆多个镁纳米薄片并通过与多个镁纳米薄层化学形成氢化镁来储存氢。

7. 发明申请

US20070042609A1 Molecular caulk: a pore sealant for ultra-low k dielectrics 审中-公开
标题翻译：分子填缝剂：用于超低k电介质的孔密封剂
公开(公告)号：US20070042609A1
公开(公告)日：2007-02-22
申请号：US11413527
申请日：2006-04-28
申请人： John Senkevich , Toh-Ming Lu
发明人： John Senkevich , Toh-Ming Lu
IPC分类号： H01L21/31 , H01L21/4763
CPC分类号： H01L21/3122 , H01L21/02118 , H01L21/02137 , H01L21/022 , H01L21/02203 , H01L21/02263 , H01L21/02282 , H01L21/76829 , H01L21/76831
摘要： Methods of use of parylene based polymers with porous ultra-low κ dielectric materials and use of parylene barriers in integrated circuit fabrication are presented.
摘要翻译：提出了使用聚对二甲苯基聚合物与多孔超低kappa电介质材料和集成电路制造中使用聚对二甲苯屏障的方法。

8. 发明申请

US20050282369A1 Enhanced step coverage of thin films on patterned substrates by oblique angle PVD 有权
标题翻译：通过斜角PVD增强图案化基板上的薄膜的阶跃覆盖
公开(公告)号：US20050282369A1
公开(公告)日：2005-12-22
申请号：US10872083
申请日：2004-06-18
申请人： Tansel Karabacak , Toh-Ming Lu , John Barthel
发明人： Tansel Karabacak , Toh-Ming Lu , John Barthel
IPC分类号： C23C14/04 , C23C14/50 , H01L21/20 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/505 , H01L21/2855
摘要： A method and an apparatus for fabricating an integrated circuit entail directing a vapor flux toward a substrate surface from a plurality of directions associated with a plurality of azimuth angles, and selecting a deposition angle of the vapor flux, relative to a normal incidence, to obtain a substantially conformal film. The surface feature can be associated with, for example, one or more vias and/or one or more trenches.
摘要翻译：用于制造集成电路的方法和装置需要从与多个方位角相关联的多个方向将蒸汽通量引向衬底表面，并且相对于法向入射选择蒸气通量的沉积角度，以获得基本上保形膜。表面特征可以与例如一个或多个通孔和/或一个或多个沟槽相关联。

9. 发明授权

US06527855B2 Atomic layer deposition of cobalt from cobalt metallorganic compounds 有权
标题翻译：来自钴金属有机化合物的钴的原子层沉积
公开(公告)号：US06527855B2
公开(公告)日：2003-03-04
申请号：US09974178
申请日：2001-10-10
申请人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
发明人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
IPC分类号： C30B2500
CPC分类号： C23C16/18
摘要： Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C5H7O2)2] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO2, silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.
摘要翻译：通过原子层沉积（ALD）制备钴薄膜。使用乙酸丙酮前体钴（II）[Co（C 5 H 7 O 2）2]使用氢还原将膜选择性地沉积在铱底物上。当使用硅烷作为还原剂时，在SiO2，硅，氟化石英玻璃（FSG）和钽上观察到钴生长。

10. 发明授权

US5268202A Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene 失效
标题翻译：使用1,4-双（三氟甲基）苯气相沉积聚对二甲苯
公开(公告)号：US5268202A
公开(公告)日：1993-12-07
申请号：US960089
申请日：1992-10-09
申请人： Lu You , Guang-Rong Yang , Toh-Ming Lu , James A. Moore , John F. P. McDonald
发明人： Lu You , Guang-Rong Yang , Toh-Ming Lu , James A. Moore , John F. P. McDonald
IPC分类号： B05D7/24 , C23C16/448 , C23C16/00
CPC分类号： B05D1/60 , C23C16/4488
摘要： A PA-F polymer film is formed using a mixture of 1,4-bis (trifluoromethyl) benzene (TFB) and a halogen initiator. This mixture is provided to a low pressure reactor containing a metal catalyst. The reactor is operated at a sufficient temperature to form a reactive monomer by a chemical reaction at the surface of the catalyst. The reactive monomer is condensed on the surface of a substrate cooled to a temperature sufficiently low to induce polymerization of the reactive monomer to form a PA-F polymer film. In general, the proportion of halogen initiator is about 0.25 to 50% by volume relative to the total volume of the TFB/halogen initiator mixture. The reactor is operated at a temperature of about 200.degree. to 700.degree. C. and a pressure of less than about one torr. In addition, the surface of the substrate is maintained at a temperature of about -30.degree. C. to room temperature. In the preferred approach, the halogen initiator is dibromotetrafluoro-p-xylene (DBX) and the proportion of DBX is about 1 to 5%.
摘要翻译：使用1,4-双（三氟甲基）苯（TFB）和卤素引发剂的混合物形成PA-F聚合物膜。将该混合物提供至含有金属催化剂的低压反应器。反应器在足够的温度下操作以通过催化剂表面的化学反应形成反应性单体。反应性单体在冷却到足够低的温度的基材的表面上冷凝以引发反应性单体的聚合以形成PA-F聚合物膜。通常，相对于TFB /卤素引发剂混合物的总体积，卤素引发剂的比例为约0.25至50体积％。反应器在约200℃至700℃的温度和小于约一乇的压力下操作。此外，将基板的表面保持在约-30℃至室温的温度。在优选的方法中，卤素引发剂是二溴四氟对二甲苯（DBX），DBX的比例为约1至5％。

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