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1. 发明授权

US07285842B2 Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration 有权
标题翻译：硅氧烷环氧聚合物作为金属扩散阻隔层以减少电迁移
公开(公告)号：US07285842B2
公开(公告)日：2007-10-23
申请号：US10832844
申请日：2004-04-27
申请人： Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka , Ramkrishna Ghoshal
发明人： Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka , Ramkrishna Ghoshal
IPC分类号： H01L23/58 , H01L23/485
CPC分类号： H01L21/76834 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.
摘要翻译：公开了使用硅氧烷环氧聚合物作为邻近导电金属层的扩散阻挡层的结构。硅氧烷环氧聚合物对诸如铜的导电金属表现出优异的粘附性，并且提供了金属线的电迁移寿命。此外，硅氧烷环氧聚合物的介电常数小于3，因此提供比常规扩散阻挡层更好的性能。

2. 发明申请

US20060099819A1 Low dielectric constant compositions and methods of use thereof 审中-公开
标题翻译：低介电常数组合物及其使用方法
公开(公告)号：US20060099819A1
公开(公告)日：2006-05-11
申请号：US11219211
申请日：2005-09-02
申请人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
发明人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
IPC分类号： H01L21/31
CPC分类号： H01L21/02123 , H01L21/02282 , H01L21/3121
摘要： Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within an integrated circuit.
摘要翻译：公开了低介电常数组合物及其在集成电路中的使用方法。低电介质组合物衍生自碳硅烷聚合物和含有嵌入的硅或二环丁烷环的低聚物，并且在加热诱导交联之后，可以用作集成电路内的层间电介质以及覆盖层。

3. 发明授权

US07019386B2 Siloxane epoxy polymers for low-k dielectric applications 有权
标题翻译：用于低k电介质应用的硅氧烷环氧聚合物
公开(公告)号：US07019386B2
公开(公告)日：2006-03-28
申请号：US10832515
申请日：2004-04-27
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
IPC分类号： H01L23/58
CPC分类号： C09D183/06 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
摘要翻译：公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在高于400℃的温度下保持稳定，使得它们在半导体工业中特别有吸引力

4. 发明申请

US20050236695A1 Siloxane epoxy polymers for low-k dielectric applications 有权
标题翻译：用于低k电介质应用的硅氧烷环氧聚合物
公开(公告)号：US20050236695A1
公开(公告)日：2005-10-27
申请号：US10832515
申请日：2004-04-27
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam Murarka
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam Murarka
IPC分类号： C08G77/04 , C09D183/06 , H01L23/532 , H01L23/58
CPC分类号： C09D183/06 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
摘要翻译：公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在高于400℃的温度下保持稳定，使得它们在半导体工业中特别有吸引力

5. 发明申请

US20080113283A1 SILOXANE EPOXY POLYMERS FOR REDISTRIBUTION LAYER APPLICATIONS 审中-公开
标题翻译：用于重新分配层应用的硅氧烷环氧聚合物
公开(公告)号：US20080113283A1
公开(公告)日：2008-05-15
申请号：US11742192
申请日：2007-04-30
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Rajat Ghoshal , Ou Ya
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Rajat Ghoshal , Ou Ya
IPC分类号： G03F9/00 , B05D3/06
CPC分类号： G03F7/0755 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0757
摘要： Siloxane epoxy materials employed as redistribution layers in electronic packaging and coatings for imprinting lithography, and methods of fabrication are disclosed.
摘要翻译：公开了在电子封装中用作再分布层的硅氧烷环氧材料和用于压印光刻的涂层，以及制造方法。

6. 发明申请

US20080003778A1 Low-temperature welding with nano structures 审中-公开
标题翻译：低温焊接纳米结构
公开(公告)号：US20080003778A1
公开(公告)日：2008-01-03
申请号：US11808761
申请日：2007-06-12
申请人： Greg Eyck , Toh-Ming Lu , Tansel Karabacak , Dexian Ye , Pei-I Wang
发明人： Greg Eyck , Toh-Ming Lu , Tansel Karabacak , Dexian Ye , Pei-I Wang
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , B81C3/001
摘要： A method of bonding two substrates and a corresponding bonded structure are described. The method includes forming a first nanostructure layer comprising nanostructures on a first substrate. A second substrate is contacted with the first nanostructure layer. The first nanostructure layer is heated at a heating temperature below a melting temperature of the first and second substrates. The first nanostructure layer is cooled after heating the nanostructure layer such that the first substrate is bonded to the second substrate.
摘要翻译：描述了粘合两个基板和相应的结合结构的方法。该方法包括在第一基底上形成包含纳米结构的第一纳米结构层。第二衬底与第一纳米结构层接触。第一纳米结构层在低于第一和第二基底的熔融温度的加热温度下被加热。在加热纳米结构层之后冷却第一纳米结构层，使得第一基底结合到第二基底。

7. 发明申请

US20050236711A1 Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration 有权
标题翻译：硅氧烷环氧聚合物作为金属扩散阻隔层以减少电迁移
公开(公告)号：US20050236711A1
公开(公告)日：2005-10-27
申请号：US10832844
申请日：2004-04-27
申请人： Pei-I Wang , Toh-Ming Lu , Shyam Murarka , Ramkrishna Ghoshal
发明人： Pei-I Wang , Toh-Ming Lu , Shyam Murarka , Ramkrishna Ghoshal
IPC分类号： H01L21/768 , H01L23/52 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.
摘要翻译：公开了使用硅氧烷环氧聚合物作为邻近导电金属层的扩散阻挡层的结构。硅氧烷环氧聚合物对诸如铜的导电金属表现出优异的粘附性，并且提供了金属线的电迁移寿命。此外，硅氧烷环氧聚合物的介电常数小于3，因此提供比常规扩散阻挡层更好的性能。

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