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1. 发明申请

US20070290166A1 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
标题翻译：用于抛光底物的方法和组合物
公开(公告)号：US20070290166A1
公开(公告)日：2007-12-20
申请号：US11838512
申请日：2007-08-14
申请人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
发明人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
IPC分类号： C09K13/04
CPC分类号： C09K3/1463
摘要： Compositions and processes for producing compositions for removing conductive material, such as copper or copper alloys, from a substrate with reduced dishing and reduced insensitivity to overpolishing are provided. Embodiments include polishing compositions for electrochemical mechanical polishing of a substrate surface comprising a conductive material, the compositions having a pH of between about 3.0 to about 9.0, such as between about 4.0 to about 7.0, for example between about 5.0 to about 6.5. The polishing compositions comprise one or more inorganic based electrolytes, such as potassium phosphate monobasic, one or more chelating agents, such as citric acid, imidodiacetic acid, glycine, or salts thereof, such as ammonium citrate, one or more corrosion inhibitors, such as benzotriazole, a basic pH adjusting agent, such as ammonium hydroxide, potassium hydroxide or combinations thereof, one or more oxidizers, such as hydrogen peroxide or ammonium persulphate (APS), and a solvent, such as deionized water.
摘要翻译：提供了用于从具有减少的凹陷的基底中去除导电材料（例如铜或铜合金）的组合物的组合物和方法，并且降低了对过度抛光的不敏感性。实施方案包括用于包含导电材料的基底表面的电化学机械抛光的抛光组合物，所述组合物的pH为约3.0至约9.0，例如约4.0至约7.0，例如约5.0至约6.5。抛光组合物包含一种或多种无机基电解质，例如磷酸二氢钾，一种或多种螯合剂，例如柠檬酸，亚氨基二乙酸，甘氨酸或其盐，例如柠檬酸铵，一种或多种腐蚀抑制剂，例如苯并三唑，碱性pH调节剂，例如氢氧化铵，氢氧化钾或其组合，一种或多种氧化剂，例如过氧化氢或过硫酸铵（APS），以及溶剂如去离子水。

2. 发明申请

US20070235345A1 Polishing method that suppresses hillock formation 审中-公开
标题翻译：抑制小丘形成的抛光方法
公开(公告)号：US20070235345A1
公开(公告)日：2007-10-11
申请号：US11400454
申请日：2006-04-07
申请人： Tianbao Du , Feng Liu , May Yu , Alan Duboust , Wei-Yung Hsu
发明人： Tianbao Du , Feng Liu , May Yu , Alan Duboust , Wei-Yung Hsu
IPC分类号： B23H5/08
CPC分类号： B23H5/08 , B24B37/04 , C25F3/02 , H01L21/321 , H01L21/32125 , H01L21/7684
摘要： An ECMP method that suppresses hillock formation on a substrate includes the step of buffing a substrate before a two-step electrochemical mechanical polishing process. The buffing step prevents hillocks from forming around the features of the substrate and does not interfere with the protrusion formation. The buffing step includes contacting the substrate with a polishing pad and rotating the substrate and the polishing pad in opposite directions.
摘要翻译：抑制基板上的小丘形成的ECMP方法包括在两步电化学机械抛光工艺之前抛光基板的步骤。抛光步骤防止小丘围绕衬底的特征形成，并且不会妨碍突起形成。抛光步骤包括使基板与抛光垫接触，并以相反的方向旋转基板和抛光垫。

3. 发明授权

US07390429B2 Method and composition for electrochemical mechanical polishing processing 失效
标题翻译：电化学机械抛光加工的方法和组成
公开(公告)号：US07390429B2
公开(公告)日：2008-06-24
申请号：US11312823
申请日：2005-12-19
申请人： Feng Q. Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
发明人： Feng Q. Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06
CPC分类号： H01L21/32125 , B23H5/08 , C25F3/02 , H01L21/7684
摘要： A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.
摘要翻译：提供一种处理其上设置有导电材料层的基板的方法，其包括将基板定位在处理装置中并将第一抛光组合物提供到基板之间。抛光组合物包括第一螯合剂，第二螯合剂，第一腐蚀抑制剂，第二腐蚀抑制剂，抑制剂，溶剂和无机酸基电解质，以提供约3至约10的pH。

4. 发明授权

US07323416B2 Method and composition for polishing a substrate 失效
标题翻译：抛光基材的方法和组合物
公开(公告)号：US07323416B2
公开(公告)日：2008-01-29
申请号：US11196876
申请日：2005-08-04
申请人： Feng Q. Liu , Tianbao Du , Alain Duboust , Yan Wang , Yongqi Hu , Stan D. Tsai , Liang-Yuh Chen , Wen-Chiang Tu , Wei-Yung Hsu
发明人： Feng Q. Liu , Tianbao Du , Alain Duboust , Yan Wang , Yongqi Hu , Stan D. Tsai , Liang-Yuh Chen , Wen-Chiang Tu , Wei-Yung Hsu
IPC分类号： H01L21/302
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , H01L21/32125 , H01L21/6875 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率除去，以及然后用至少一种化学机械抛光技术研磨衬底。

5. 发明申请

US20070227902A1 Removal profile tuning by adjusting conditioning sweep profile on a conductive pad 审中-公开
标题翻译：通过调节导电垫上的调节扫描轮廓来消除轮廓调整
公开(公告)号：US20070227902A1
公开(公告)日：2007-10-04
申请号：US11392193
申请日：2006-03-29
申请人： Tianbao Du , Feng Liu , May Yu , Alain Duboust , Wei-Yung Hsu
发明人： Tianbao Du , Feng Liu , May Yu , Alain Duboust , Wei-Yung Hsu
IPC分类号： B23H5/08
CPC分类号： B23H5/08 , B24B49/00 , B24B53/017
摘要： A method for controlling the removal rate of material from a substrate during a polishing process is described. In one embodiment, the pre-polish profile of the substrate is determined and polishing pad conditioning parameters are adjusted based on that profile. Parameters such as conditioning head sweep range and frequency, and conditioning element downforce and RPM may be adjusted to selectively condition portions of the pad to maintain optimum polishing qualities of the pad.
摘要翻译：描述了一种用于在抛光过程中控制来自基底的材料的去除速率的方法。在一个实施例中，确定基板的预抛光轮廓并且基于该轮廓来调整抛光垫调节参数。可以调节诸如调节头扫描范围和频率以及调节元件下压力和RPM的参数以选择性地调节焊盘的部分以保持焊盘的最佳抛光质量。

6. 发明申请

US20060169597A1 Method and composition for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060169597A1
公开(公告)日：2006-08-03
申请号：US11356352
申请日：2006-02-15
申请人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu , Robert Ewald , Yuan Tian , You Wang , Stan Tsai
发明人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu , Robert Ewald , Yuan Tian , You Wang , Stan Tsai
IPC分类号： B23H9/00 , B23H7/00
CPC分类号： C25F3/02 , B23H5/08
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, a corrosion inhibitor having an azole group, an organic acid salt, a pH adjusting agent to provide a pH between about 2 and about 10, and a solvent, and a solvent. The composition may be used in a conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as copper, with a reduction in planarization type defects and yielding a desirable surface finish.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，组合物包括酸基电解质体系，具有唑基的腐蚀抑制剂，有机酸盐，pH调节剂以提供约2至约10的pH以及溶剂和溶剂。该组合物可以用于导电材料去除工艺中，包括在包括电极的工艺设备中设置其上形成有导电材料层的衬底，在电极和衬底之间提供组合物，在电极和衬底之间施加偏压，以及从导电材料层去除导电材料。本文所述的抛光组合物和方法提高了材料从衬底表面（例如铜）的有效去除速率，同时平坦化型缺陷减少并产生理想的表面光洁度。

7. 发明申请

US20060102872A1 Method and composition for electrochemical mechanical polishing processing 失效
标题翻译：电化学机械抛光加工的方法和组成
公开(公告)号：US20060102872A1
公开(公告)日：2006-05-18
申请号：US11312823
申请日：2005-12-19
申请人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
发明人： Feng Liu , Tianbao Du , Alain Duboust , Wei-Yung Hsu
IPC分类号： C09K13/00 , C09K13/04
CPC分类号： H01L21/32125 , B23H5/08 , C25F3/02 , H01L21/7684
摘要： A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.
摘要翻译：提供一种处理其上设置有导电材料层的基板的方法，其包括将基板定位在处理装置中并将第一抛光组合物提供到基板之间。抛光组合物包括第一螯合剂，第二螯合剂，第一腐蚀抑制剂，第二腐蚀抑制剂，抑制剂，溶剂和无机酸基电解质，以提供约3至约10的pH。

8. 发明申请

US20100038584A1 Polishing Composition and Polishing Method Using the Same 审中-公开
标题翻译：抛光组合物和使用其的抛光方法
公开(公告)号：US20100038584A1
公开(公告)日：2010-02-18
申请号：US12190897
申请日：2008-08-13
申请人： Tianbao DU
发明人： Tianbao DU
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/32125 , C09G1/02 , C09K3/1463 , C25F3/30
摘要： A polishing composition for electrochemical mechanical polishing a surface of an object in which the polishing composition contains a phosphate electrolyte such as a potassium phosphate, a chelating agent such as a potassium citrate, a corrosion inhibitor such as benzotriazole, an oxidizing agent such as hydrogen peroxide, and a solvent such as water. The polishing composition preferably further contains abrasive particles such as colloidal silica particles.
摘要翻译：一种用于电化学机械抛光抛光组合物包含磷酸盐电解质如磷酸钾，螯合剂如柠檬酸钾，缓蚀剂如苯并三唑，氧化剂如过氧化氢的物体表面的抛光组合物，和溶剂如水。抛光组合物优选还含有磨料颗粒如胶体二氧化硅颗粒。

9. 发明申请

US20070251832A1 Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance 审中-公开
标题翻译：用于电化学机械抛光的方法和装置，具有更高的衬垫速度以更好的表面光洁度和更高的清除率
公开(公告)号：US20070251832A1
公开(公告)日：2007-11-01
申请号：US11413493
申请日：2006-04-27
申请人： Tianbao Du , Feng Liu , You Wang , Alain Duboust , Wei-Yung Hsu
发明人： Tianbao Du , Feng Liu , You Wang , Alain Duboust , Wei-Yung Hsu
IPC分类号： B23H9/00
CPC分类号： B23H5/08 , B24B21/04 , B24B37/04 , B24B57/02
摘要： The present invention relates to an apparatus and a method for polishing a semiconductor substrate with high throughput. One embodiment of the present invention provides an apparatus for electro-chemical mechanical polishing a conductive surface on a substrate. The apparatus comprises a fluid basin having a fluid volume for retaining a polishing solution, a linear polishing station disposed in the fluid basin, wherein the linear polishing station having at least one electrode and a conductive top surface with a linear movement, the conductive top surface is configured to provide an electrical bias to the conductive surface on the substrate, and a carrier head configured to retain the substrate and position the conductive surface of the substrate to be in contact with the conductive top surface of the linear polishing station.
摘要翻译：本发明涉及一种以高产量抛光半导体衬底的装置和方法。本发明的一个实施例提供了一种用于对基底上的导电表面进行电化学机械抛光的装置。该装置包括具有用于保持抛光溶液的流体体积的流体池，设置在流体池中的线性抛光站，其中线性抛光站具有至少一个电极和具有线性运动的导电顶表面，导电顶表面被配置为向衬底上的导电表面提供电偏压，以及被配置为保持衬底并且将衬底的导电表面定位成与线性抛光站的导电顶表面接触的载体头。

10. 发明申请

US20070187258A1 Method for electrochemically polishing a conductive material on a substrate 审中-公开
标题翻译：在基板上电化学研磨导电材料的方法
公开(公告)号：US20070187258A1
公开(公告)日：2007-08-16
申请号：US11355769
申请日：2006-02-15
申请人： Tianbao Du , Feng Liu , Alain Duboust , Wei-Yung Hsu , Liang-Yuh Chen
发明人： Tianbao Du , Feng Liu , Alain Duboust , Wei-Yung Hsu , Liang-Yuh Chen
IPC分类号： B23H5/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , H01L21/32125
摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.
摘要翻译：提供了从衬底表面去除导电材料的方法。在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料，以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。

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