会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Dose-Based End-Pointing for Low-KV FIB Milling TEM Sample Preparation
    • 用于低KV FIB铣削TEM样品制备的基于剂量的终点
    • US20140061032A1
    • 2014-03-06
    • US13600843
    • 2012-08-31
    • Thomas G. MillerJason ArjavacMichael Moriarty
    • Thomas G. MillerJason ArjavacMichael Moriarty
    • C23F1/04
    • C23F1/04G01N1/32H01J37/3023H01J37/3056H01J2237/30466H01J2237/31745
    • A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.
    • 一种用于使用聚焦离子束形成透射电子显微镜样品薄片的方法,系统和计算机可读介质,包括将高能量聚焦离子束引向体积体积的材料; 铣削不需要的体积的材料以产生具有一个或多个具有损伤层的暴露面的未完成的样品薄片; 表征聚焦离子束的去除速率; 在表征去除速率之后,将低能量聚焦离子束引向未完成的样品薄片达预定的研磨时间,以从低能量聚焦离子束输送每个面积的特定剂量的离子; 并用低能量聚焦离子束研磨未完成的样品薄片以去除损伤层的至少一部分,以产生包括感兴趣特征的至少一部分的成品样品薄片。
    • 6. 发明授权
    • Methods and systems for determining an electrical property of an insulating film
    • 用于确定绝缘膜的电性能的方法和系统
    • US07064565B1
    • 2006-06-20
    • US10699352
    • 2003-10-31
    • Zhiwei XuThomas G. MillerJianou ShiGregory S. Horner
    • Zhiwei XuThomas G. MillerJianou ShiGregory S. Horner
    • G01R31/302G01R31/26
    • G01R31/129G01R31/2831
    • Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.
    • 提供了确定绝缘膜的表面电压的方法。 一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。 该方法还包括从电流确定绝缘膜的表面电压。 以这种方式,不测量表面电压,而是根据测量的电流确定。 另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流,并从第二电流确定膜的第二表面电压。 可以重复该方法直到测量Q-V扫描。 附加实施例可以包括在沉积电荷期间改变控制电压,使得到晶片的电流随时间基本上是恒定的,并且确定绝缘膜的电荷对电压数据。