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    • 1. 发明申请
    • MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 存储器件及其制造方法
    • US20130058162A1
    • 2013-03-07
    • US13423973
    • 2012-03-19
    • Takaya YAMANAKASusumu SHUTO
    • Takaya YAMANAKASusumu SHUTO
    • G11C11/15H01L21/8246
    • G11C11/16G11C11/161G11C11/1659G11C11/1673G11C11/1675H01L27/228H01L43/08Y10S977/933Y10S977/935
    • According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.
    • 根据一个实施例,存储器件包括:第一信号线; 第二信号线; 晶体管 记忆区; 和导电区域。 晶体管控制在第一线和第二线之间流动的第一方向上的电流中的每一个的导通以及与第一方向相反的第二方向的电流。 存储区域具有第一磁性隧道结元件,该第一磁性隧道结元件连接在晶体管的第一线路和一端之间,当不小于第一平行阈值的电流沿第一方向流动时,其磁化方向变得平行,并且 当不小于第一反平行阈值的电流在第二方向上流动时,其磁化方向变为反平行。 导电区域连接在第二线路和晶体管的另一端之间。
    • 4. 发明授权
    • Pneumatic tire
    • 气动轮胎
    • US07441576B2
    • 2008-10-28
    • US10558254
    • 2004-05-18
    • Takaya Yamanaka
    • Takaya Yamanaka
    • B60C9/22B60C9/20B60C9/18
    • B60C9/20B60C9/28Y10T152/10783
    • A pneumatic tire comprises a carcass 1 comprised of one or more carcass plies toroidally extending between a pair of bead portions, a tread rubber 2 arranged at an outer peripheral side of a crown portion of the carcass 1, a belt 5 arranged between the tread rubber 2 and the carcass 1 and comprised of two belt layers 3, 4, cords 10 of which layers being crossed with each other and extending in an inclination angle of 45-80° with respect to a circumferential direction of the tire, and one or more circumferential strengthening layers 6, 7 arranged at an inner peripheral side of the belt 5 and containing wavy or zigzag cords 9 extended substantially in the circumferential direction of the tire, in which a width L of a belt layer 7 located at the inner peripheral side is made larger than a width M of the circumferential strengthening layer and a width N of a belt layer located at the outer peripheral side is made smaller than the width M of the circumferential strengthening layer.
    • 充气轮胎包括由一个或多个在一对胎圈部之间环形延伸的胎体帘布层的胎体1,布置在胎体1的胎冠部的外周侧的胎面橡胶2,布置在胎体橡胶之间的带5 2和胎体1,并且包括两个带束层3,4,帘线10彼此交叉并相对于轮胎的圆周方向以45-80°的倾斜角度延伸,并且一个或多个 布置在带5的内周侧的周向加强层6,7,并且包含大致沿轮胎周向延伸的波纹状或锯齿状帘线9,其中位于内周侧的带束层7的宽度L为 使得比周向强化层的宽度M大,并且使位于外周侧的带束层的宽度N小于周向强化层的宽度M.
    • 5. 发明授权
    • Memory device and method for manufacturing the same
    • 存储器件及其制造方法
    • US08724377B2
    • 2014-05-13
    • US13423700
    • 2012-03-19
    • Takaya YamanakaSusumu ShutoYoshiaki Asao
    • Takaya YamanakaSusumu ShutoYoshiaki Asao
    • G11C11/00
    • H01L43/08G11C11/161G11C11/1659G11C11/1673G11C11/1675G11C11/5607H01L27/228H01L43/12
    • According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.
    • 根据一个实施例,存储器件包括:第一信号线; 第二信号线; 晶体管 第一存储区; 和第二存储器区域。 晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。 第一存储区具有第一磁隧道结元件。 当电流沿一个方向流动时,其磁化方向变得平行,并且当另一个方向上的电流时,磁化方向变得反平行。 第二存储器区域具有第二磁性隧道结元件。 当电流沿一个方向流动时,其磁化方向变得平行,并且当电流在另一个第一方向上流动时,其磁化方向变得反平行。
    • 7. 发明申请
    • Pneumatic tire
    • 气动轮胎
    • US20070056672A1
    • 2007-03-15
    • US10558254
    • 2004-05-18
    • Takaya Yamanaka
    • Takaya Yamanaka
    • B60C9/00
    • B60C9/20B60C9/28Y10T152/10783
    • A pneumatic tire comprises a carcass 1 comprised of one or more carcass plies toroidally extending between a pair of bead portions, a tread rubber 2 arranged at an outer peripheral side of a crown portion of the carcass 1, a belt 5 arranged between the tread rubber 2 and the carcass 1 and comprised of two belt layers 3, 4, cords 10 of which layers being crossed with each other and extending in an inclination angle of 45-80° with respect to a circumferential direction of the tire, and one or more circumferential strengthening layers 6, 7 arranged at an inner peripheral side of the belt 5 and containing wavy or zigzag cords 9 extended substantially in the circumferential direction of the tire, in which a width L of a belt layer 7 located at the inner peripheral side is made larger than a width M of the circumferential strengthening layer and a width N of a belt layer located at the outer peripheral side is made smaller than the width M of the circumferential strengthening layer.
    • 充气轮胎包括由一个或多个在一对胎圈部之间环形延伸的胎体帘布层的胎体1,布置在胎体1的胎冠部的外周侧的胎面橡胶2,布置在胎体橡胶之间的带5 2和胎体1,并且包括两个带束层3,4,帘线10彼此交叉并相对于轮胎的圆周方向以45-80°的倾斜角度延伸,并且一个或多个 布置在带5的内周侧的周向加强层6,7,并且包含大致沿轮胎周向延伸的波纹状或锯齿状帘线9,其中位于内周侧的带束层7的宽度L为 使得比周向强化层的宽度M大,并且使位于外周侧的带束层的宽度N小于周向强化层的宽度M.
    • 8. 发明授权
    • Memory device and method for manufacturing the same
    • 存储器件及其制造方法
    • US08885396B2
    • 2014-11-11
    • US13423973
    • 2012-03-19
    • Takaya YamanakaSusumu Shuto
    • Takaya YamanakaSusumu Shuto
    • G11C11/00H01L43/08H01L27/22G11C11/16
    • G11C11/16G11C11/161G11C11/1659G11C11/1673G11C11/1675H01L27/228H01L43/08Y10S977/933Y10S977/935
    • According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.
    • 根据一个实施例,存储器件包括:第一信号线; 第二信号线; 晶体管 记忆区; 和导电区域。 晶体管控制在第一线和第二线之间流动的第一方向上的电流中的每一个的导通以及与第一方向相反的第二方向的电流。 存储区域具有第一磁性隧道结元件,该第一磁性隧道结元件连接在晶体管的第一线路和一端之间,当不小于第一平行阈值的电流沿第一方向流动时,其磁化方向变得平行,并且 当不小于第一反平行阈值的电流在第二方向上流动时,其磁化方向变为反平行。 导电区域连接在第二线路和晶体管的另一端之间。