专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08724377B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US08724377B2
公开(公告)日：2014-05-13
申请号：US13423700
申请日：2012-03-19
申请人： Takaya Yamanaka , Susumu Shuto , Yoshiaki Asao
发明人： Takaya Yamanaka , Susumu Shuto , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.
摘要翻译：根据一个实施例，存储器件包括：第一信号线; 第二信号线; 晶体管第一存储区; 和第二存储器区域。晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。第一存储区具有第一磁隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当另一个方向上的电流时，磁化方向变得反平行。第二存储器区域具有第二磁性隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当电流在另一个第一方向上流动时，其磁化方向变得反平行。

2. 发明授权

US08941197B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08941197B2
公开(公告)日：2015-01-27
申请号：US13370075
申请日：2012-02-09
申请人： Takeshi Kajiyama , Yoshiaki Asao
发明人： Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： H01L27/22 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.
摘要翻译：一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和倪

3. 发明授权

US07920412B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07920412B2
公开(公告)日：2011-04-05
申请号：US12605072
申请日：2009-10-23
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

4. 发明授权

US07916522B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07916522B2
公开(公告)日：2011-03-29
申请号：US12400262
申请日：2009-03-09
申请人： Kiyotaro Itagaki , Tsuneo Inaba , Yoshihiro Ueda , Yoshiaki Asao
发明人： Kiyotaro Itagaki , Tsuneo Inaba , Yoshihiro Ueda , Yoshiaki Asao
IPC分类号： G11C11/15
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0061 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/75 , G11C2213/78
摘要： A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦m≦n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.
摘要翻译：半导体存储器件包括在一个单元中布置的具有低电阻状态和高电阻状态的n个电阻变化元件串联或并联连接，在相同电阻状态下具有不同的电阻值，并且在低电平电阻状态和不同条件下的高电阻状态，以及与n个电阻变化元件的一端连接的写入电路，并向n个电阻变化元件施加脉冲电流m（1＆nlE; m＆nlE; n）次在写操作期间。令Im为第m个脉冲电流的当前值，条件I1> I2>。。。 > Im持有。

5. 发明授权

US07869259B2 Resistance change memory, and data write and erase methods thereof 有权
标题翻译：电阻变化存储器及其数据写入和擦除方法
公开(公告)号：US07869259B2
公开(公告)日：2011-01-11
申请号：US12406898
申请日：2009-03-18
申请人： Yoshiaki Asao
发明人： Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0097 , G11C16/0466 , G11C2013/0078 , G11C2213/79 , H01L27/2436 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/165
摘要： A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.
摘要翻译：电阻变化存储器包括第一互连，第二互连，第一电阻改变元件，其具有设置在第一电极和第二电极之间的第一电极，第二电极和第一隧道绝缘膜，第一隧道绝缘膜包括通过引入缺陷以捕获空穴或电子而形成的第一陷阱区域，以及第二电极连接到第一互连件，以及第一晶体管，其电流通路的一端连接到第一电极，而另一端连接到第二互连。

6. 发明申请

US20080225577A1 MAGNETIC RANDOM ACCESS MEMORY, AND WRITE METHOD AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法及其制造方法
公开(公告)号：US20080225577A1
公开(公告)日：2008-09-18
申请号：US12043617
申请日：2008-03-06
申请人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
发明人： Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
IPC分类号： G11C11/02 , H01L29/82 , H01L21/00 , G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/22 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.
摘要翻译：磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件，具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

7. 发明申请

US20080151608A1 SEMICONDUCTOR MEMORY DEVICE AND WRITE AND READ METHODS OF THE SAME 失效
标题翻译：半导体存储器件及其写入和读取方法
公开(公告)号：US20080151608A1
公开(公告)日：2008-06-26
申请号：US11959897
申请日：2007-12-19
申请人： Keiji HOSOTANI , Yoshiaki Asao
发明人： Keiji HOSOTANI , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675 , G11C2213/75 , Y10S977/935
摘要： A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals of the first and second resistance change elements, a second electrode which connects one terminals of the third and fourth resistance change elements, a bit line which connects the other terminals of the second and third resistance change elements, first to fourth word lines respectively paired with the first to fourth resistance change elements, arranged apart from the first and second electrodes, and running in a second direction, a first current source which supplies a first electric current to a chain structure, when writing data in a selected element, and a second current source which supplies a second electric current to a selected word line which corresponds to the selected element, when writing the data in the selected element.
摘要翻译：一种半导体存储器件，包括：沿第一方向相互顺序排列的第一至第四电阻变化元件;连接第一和第二电阻变化元件的一个端子的第一电极;连接第三和第四电极的一个端子的第二电极; 电阻变化元件，连接第二和第三电阻变化元件的其他端子的位线，与第一和第四电阻变化元件分别配对的第一至第四字线与第一和第二电极分开配置，并且以第二方向，当将数据写入所选择的元件时，将第一电流提供给链结构的第一电流源和向对应于所选择的元件的所选择的字线提供第二电流的第二电流源，在所选元素中写入数据。

8. 发明授权

US07376003B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07376003B2
公开(公告)日：2008-05-20
申请号：US10465616
申请日：2003-06-20
申请人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
发明人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.
摘要翻译：使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转元件。当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

9. 发明申请

US20070187801A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070187801A1
公开(公告)日：2007-08-16
申请号：US11397726
申请日：2006-04-05
申请人： Yoshiaki Asao , Akihiro Nitayama
发明人： Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/12 , H01L31/117
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286
摘要： A semiconductor device comprising a semiconductor substrate, a switching element which is provided on the semiconductor substrate, a first interconnect layer which is provided above the semiconductor substrate, a plurality of phase-change memory devices which have phase-change material whose resistance changes by a phase-change due to a temperature change, being stacked, and being connected in series to the first interconnect layer and the switching element, a plurality of first heating elements which are connected in series to the respective phase-change memory devices, and a plurality of second heating elements which are connected to second interconnect layers different from the first interconnect layer, and which are provided so as to correspond to the respective phase-change memory devices.
摘要翻译：一种半导体器件，包括半导体衬底，设置在所述半导体衬底上的开关元件，设置在所述半导体衬底上方的第一互连层，具有相变材料的多个相变存储器件，所述相变材料的电阻改变为由于温度变化引起的相变，被堆叠并串联连接到第一互连层和开关元件，多个第一加热元件串联连接到各个相变存储器件，以及多个第二加热元件连接到与第一互连层不同的第二互连层，并且被设置为对应于各个相变存储器件。

10. 发明授权

US06879515B2 Magnetic memory device having yoke layer 有权
标题翻译：具有轭层的磁存储器件
公开(公告)号：US06879515B2
公开(公告)日：2005-04-12
申请号：US10926047
申请日：2004-08-26
申请人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
发明人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
IPC分类号： G11C11/15 , G11C11/00 , G11C11/16 , H01L21/00 , H01L21/8246 , H01L27/00 , H01L27/105 , H01L27/22 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.
摘要翻译：磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式