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1. 发明申请

WO2018013387A1 MAGNESIUM OXIDE SPUTTERING TARGET AND METHOD OF MAKING SAME 审中-公开
标题翻译：氧化镁溅射靶材及其制造方法
公开(公告)号：WO2018013387A1
公开(公告)日：2018-01-18
申请号：PCT/US2017/040684
申请日：2017-07-05
申请人： TOSOH SMD, INC.
发明人： IVANOV, Eugene Y. , JAWORSKI, Christopher M.
IPC分类号： C23C14/34 , C04B35/04 , C04B35/645
摘要： A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt% or higher, a density of 3.58 g/cm 3 or higher, and a transparency 10% or more. A sintered compact magnesium oxide target for sputtering having a purity of 99.99wt% or higher, a density of 3.58 g/cm 3 or higher, and an average crystal grain size of 50 μm or more.
摘要翻译：用于溅射的烧结体氧化镁靶具有99.99wt％或更高的纯度，3.58g / cm 3或更高的密度和10％或更高的透明度。更多。一种用于溅射的烧结体氧化镁靶，其纯度为99.99wt％或更高，密度为3.58g / cm 3或更高，平均晶粒尺寸为50μm或更大。 p>

2. 发明申请

WO2015061035A1 OPTIMIZED TEXTURED SURFACES AND METHODS OF OPTIMIZING 审中-公开
标题翻译：优化的纹理表面和优化方法
公开(公告)号：WO2015061035A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/059630
申请日：2014-10-08
申请人： TOSOH SMD, INC.
发明人： SMATHERS, David B. , BUCKFELLER, Joseph W. , HOLEMAN, John , REED, Justin K.
IPC分类号： B24C1/00 , B24C11/00
CPC分类号： B24C1/08 , B24C1/003 , C23C14/3414 , H01J37/3417 , H01J37/3435
摘要： Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (TWAS) method. The thus textured surface is then sprayed or blasted with ice particles to form an optimized textured surface. The ice particles may comprise sublimable particles such as frozen carbon dioxide or dry ice. Also, argon may be used as exemplary ice particles.
摘要翻译：用于处理溅射靶的组织化表面以便改善其上沉积的颗粒的粘附和保留的方法。目标表面可以首先通过诸如珠粒喷砂，喷砂，等离子喷涂或双丝弧喷涂（TWAS）方法的前体结构化方法进行构造。然后将如此织构化的表面用冰颗粒喷雾或喷射以形成优化的纹理表面。冰颗粒可以包括可升华的颗粒，例如冷冻二氧化碳或干冰。此外，可以使用氩作为示例性冰颗粒。

3. 发明申请

WO2014107558A1 SILICON SPUTTERING TARGET WITH ENHANCED SURFACE PROFILE AND IMPROVED PERFORMANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有增强表面轮廓的硅喷射目标和改进的性能及其制造方法
公开(公告)号：WO2014107558A1
公开(公告)日：2014-07-10
申请号：PCT/US2014/010142
申请日：2014-01-03
申请人： TOSOH SMD, INC.
发明人： YUAN, Yongwen , IVANOV, Eugene Y.
IPC分类号： C23C14/34 , B23K20/00
CPC分类号： H01J37/3423 , B23K1/0008 , B23K1/20 , B23K35/0233 , B23K35/0238 , B23K35/24 , B23K35/262 , C23C14/3407 , C23C14/3414 , H01J37/3426 , Y10T29/49996
摘要： A sputtering target assembly and method of manufacturing the sputtering target assembly is provided. The sputtering target assembly may have a target blank. The target blank may have at least one planar surface with a thickness T1 and a concave center with a thickness T2, wherein T2 is less than T1.
摘要翻译：提供溅射靶组件及制造溅射靶组件的方法。溅射靶组件可以具有目标空白。目标坯料可以具有至少一个具有厚度T1的平坦表面和具有厚度T2的凹入中心，其中T2小于T1。

4. 发明申请

WO2013070679A1 SILICON SPUTTERING TARGET WITH SPECIAL SURFACE TREATMENT AND GOOD PARTICLE PERFORMANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有特殊表面处理和良好颗粒性能的硅喷溅目标及其制造方法
公开(公告)号：WO2013070679A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/063829
申请日：2012-11-07
申请人： TOSOH SMD, INC.
发明人： YUAN, Yongwen , IVANOV, Eugene Y. , LIU, Yang , FRAUSTO, Phil , MIAO, Weifang
IPC分类号： C23C14/00
CPC分类号： H01J37/3426 , B08B3/04 , B08B3/08 , C23C14/0652 , C23C14/165 , C23C14/3407 , C23C14/3414 , H01J37/3435
摘要： A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.
摘要翻译：提供了包括Si靶和背板的溅射靶组件，其中所述背板结合到靶。 Si靶包括光滑的镜面表面，其表面粗糙度小于约15.0埃。提供了用于生产硅靶/背板组件的方法，其中处理硅坯以从坯料表面去除划痕，导致靶上的镜像表面，以及15.0埃或更小的表面粗糙度。该方法包括第一和第二清洁步骤，其中第一步骤在刮除去除步骤之前进行，并且第二步骤在除去刮痕之后进行。

5. 发明申请

WO2010042227A1 CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING 审中-公开
标题翻译：圆锥滚子压力机构及喷射目标制造方法
公开(公告)号：WO2010042227A1
公开(公告)日：2010-04-15
申请号：PCT/US2009/005572
申请日：2009-10-09
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
IPC分类号： C23C14/34 , B21D17/02 , B21D13/02 , B21D22/02
CPC分类号： B21D17/02 , B21D13/02 , B21D22/02 , C23C14/3407
摘要： A method of making metal target blank (1) using circular groove pressing includes pressing a metal or metal alloy target blank (1) in a first circular grooved pressing die set (20A, 20B) into a first concentric corrugated shape while maintaining an original diameter of the target blank (1) to create concentric rings of shear deformation in the target blank (1). Forces are then applied to the concentric corrugated target (1) blank sufficient to substantially flatten the target blank with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank (1) to a substantially flat condition. The target blank (1) is pressed in a second circular grooved die set (40A, 40B) into a second concentric corrugated shape while maintaining the original diameter of the target blank (1), wherein the second die set (40A, 40B) has a groove pattern offset from a groove pattern of the first die set (20A, 20B) so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank (1) sufficient to substantially flatten the target blank (1) with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank to a substantially flat condition.
摘要翻译：使用圆形沟槽压制制造金属靶坯料（1）的方法包括将第一圆形槽压模组（20A，20B）中的金属或金属合金靶坯（1）压制成第一同心波纹形状，同时保持原始直径的目标坯料（1）以在目标坯料（1）中产生剪切变形的同心环。然后将力施加到同心的波纹状目标（1）坯料上，足以在保持目标坯料（1）的原始直径以恢复目标坯料（1）的情况下用平坦的模具组件（30A，30B）基本上平坦化目标坯料，达到基本平坦的状态。目标坯料（1）在第二圆形槽模具组件（40A，40B）中被压制成第二同心波纹形状，同时保持目标坯件（1）的原始直径，其中第二模具组件（40A，40B）具有凹槽图案从第一模具组（20A，20B）的凹槽图案偏移，以在目标坯料的未被变形的区域中产生剪切变形的同心环。力再次施加到同心的波纹状目标坯料（1）上，足以基本上用平模（30A，30B）平坦化目标坯料（1），同时保持目标坯料（1）的原始直径以恢复目标坯料达到基本平坦的状态。

6. 发明申请

WO2008127493A1 ULTRA SMOOTH FACE SPUTTER TARGETS AND METHODS OF PRODUCING SAME 审中-公开
标题翻译：超声波平面飞秒瞄准镜及其生产方法
公开(公告)号：WO2008127493A1
公开(公告)日：2008-10-23
申请号：PCT/US2008/001145
申请日：2008-01-29
申请人： TOSOH SMD, INC. , BANKS, Terry, L. , SMATHERS, David, B.
发明人： BANKS, Terry, L. , SMATHERS, David, B.
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： A method is provided to remove a thickness of a sputter target surface deformation layer to thereby achieve a reduced burn-in time during sputtering operations. The method comprises extrusion hone polishing of the target surface with a visco-elastic abrasive medium.
摘要翻译：提供了一种去除溅射靶表面变形层的厚度从而在溅射操作期间实现减少的老化时间的方法。该方法包括用粘弹性研磨介质对目标表面进行抛光抛光。

7. 发明申请

WO2004024972A2 SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY 审中-公开
标题翻译：目标和背板组件的系统和方法
公开(公告)号：WO2004024972A2
公开(公告)日：2004-03-25
申请号：PCT/US0326465
申请日：2003-08-26
申请人： TOSOH SMD INC , IVANOV EUGENE Y
发明人： IVANOV EUGENE Y
IPC分类号： B23K20/02 , B23K28/00 , C23C20060101 , C23C14/34 , C23C
CPC分类号： C23C14/3407 , B23K20/021 , B23K20/023
摘要： A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results.
摘要翻译：目标和背板组件及其制造方法。目标和背板组件除了在包括目标板和背板之间的不同材料之间的扩散接合之外，还在目标板和背板之间提供机械互锁。也可以在靶材和背板之间使用中间层。目标板和背板之一上的多个脊或其他突出表面特征被连接到目标和背板的另一个上的对应的构件或通道。目标和背板的不同材料填充由多个脊形成的负角度空腔以及目标和背板的相应通道或构件，以适应扩散接合的不同材料。具有增加强度的目标和背板组件结果。

8. 发明申请

WO0186282A8 CLEANLINESS EVALUATION IN SPUTTER TARGETS USING PHASE 审中-公开
标题翻译：使用相位的SPUTTER目标中的清洁度评估
公开(公告)号：WO0186282A8
公开(公告)日：2003-02-06
申请号：PCT/US0114403
申请日：2001-05-04
申请人： TOSOH SMD INC , LEYBOVICH ALEXANDER
发明人： LEYBOVICH ALEXANDER
IPC分类号： G01N29/04 , C23C14/34 , G01N29/11 , G01N29/24 , G01N29/30 , G01N29/34 , G01N29/44 , G01N29/48 , G01N29/18
CPC分类号： G01N29/4427 , G01N29/11 , G01N29/2456 , G01N29/30 , G01N29/343 , G01N29/4445 , G01N29/4463 , G01N29/4472 , G01N29/48 , G01N2291/012 , G01N2291/0289 , G01N2291/044 , G01N2291/2695
摘要： An improved method and apparatus for non-destructive cleanliness evaluation in sputter targets using radio frequency waveform phase change and amplitude detection is disclosed. The apparatus acquires phase change and amplitude for a plurality of data points. The method disclosed for characterizing the sputter target material (52) employs the phase change and amplitude magnitude data for calculating cleanliness factors and generating pareto histograms.
摘要翻译：公开了一种用于使用射频波形相位变化和振幅检测的溅射靶中非破坏性清洁度评估的改进方法和装置。该装置获取多个数据点的相位变化和振幅。用于表征溅射靶材料（52）的方法采用用于计算清洁度因子和产生帕累托直方图的相位变化幅度数据。

9. 发明申请

WO0222300A8 METHOD OF MANUFACTURING SPUTTER TARGETS WITH INTERNAL COOLING CHANNELS 审中-公开
标题翻译：使用内部冷却通道制造喷射器目标的方法
公开(公告)号：WO0222300A8
公开(公告)日：2002-08-15
申请号：PCT/US0128411
申请日：2001-09-11
申请人： TOSOH SMD INC , IVANOV EUGENE Y
发明人： IVANOV EUGENE Y
IPC分类号： B21K25/00 , B23K20/02 , C23C14/34 , H01J37/34 , B23K20/12 , B23K31/02
CPC分类号： H01J37/3497 , B21K25/00 , B23K20/02 , B23K20/023 , C23C14/3407 , H01J37/3435 , Y10T428/24298 , Y10T428/24744 , Y10T428/24996 , Y10T428/249974 , Y10T428/249981
摘要： The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.
摘要翻译：本发明涉及低温压力固结方法，其提供了能够承受高溅射速率施加的应力的目标材料（10）与背板材料（15）的结合。根据本发明的溅射靶组件（5）优选地由具有不同热膨胀系数的目标材料（10）和背板材料（15）组成并且包括内部冷却通道（20）。在优选实施例中，所得到的结合和冷却通道（20）的形成是协同的。

10. 发明申请

WO0214571A3 HIGH PURITY SPUTTER TARGETS WITH TARGET END-OF-LIFE INDICATION AND METHOD OF MANUFACTURE 审中-公开
标题翻译：具有目标终止终止指示的高纯度射击目标和制造方法
公开(公告)号：WO0214571A3
公开(公告)日：2002-04-25
申请号：PCT/US0141775
申请日：2001-08-17
申请人： TOSOH SMD INC , IVANOV EUGENE , SMATHERS DAVID B , WICKERSHAM CHARLES E JR , POOLE JOHN E
发明人： IVANOV EUGENE , SMATHERS DAVID B , WICKERSHAM CHARLES E JR , POOLE JOHN E
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/3414 , H01J37/3426 , H01J37/3482 , H01J37/3491

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