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1. 发明申请

WO2011162813A1 BIMETALLIC TARGET 审中-公开
标题翻译：双目标
公开(公告)号：WO2011162813A1
公开(公告)日：2011-12-29
申请号：PCT/US2011/001115
申请日：2011-06-23
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , DEL-RIO, Eduardo
发明人： IVANOV, Eugene, Y. , DEL-RIO, Eduardo
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/14 , C23C14/3414 , H01J37/342 , H01J37/3429
摘要： A bimetallic rotary target formed of a first metal and a second metal for use in a sputtering apparatus. The rotary target including a target tube having a plurality of grooves or apertures formed therein. An insert being positionable within each of the grooves or apertures. The inserts including a locking mechanism that protrude from the side surface of the insert, wherein the locking mechanism is configured to contact the surface defining the grooves or apertures to secure the inserts within the target tube. Subsequently HIPing, C1Ping, electron beam welding, ultrasonic welding, mechanical fixture fit, or sintering integrally attaches the inserts to the target tube.
摘要翻译：由用于溅射装置的第一金属和第二金属形成的双金属旋转靶。旋转靶包括其中形成有多个凹槽或孔的目标管。插入件可定位在每个凹槽或孔内。所述插入件包括从所述插入件的侧表面突出的锁定机构，其中所述锁定机构构造成接触限定所述凹槽或孔的表面以将所述插入物固定在所述目标管内。随后，HIPing，C1Ping，电子束焊接，超声波焊接，机械固定配合或烧结将插入件整体附接到目标管。

2. 发明申请

WO2008033192A1 SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SAME 审中-公开
标题翻译：溅射目标组件及其制造方法
公开(公告)号：WO2008033192A1
公开(公告)日：2008-03-20
申请号：PCT/US2007/017598
申请日：2007-08-08
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich
发明人： IVANOV, Eugene, Y. , THEADO, Erich
IPC分类号： C23C14/34 , B23K20/12
CPC分类号： C23C14/3407 , B23K20/122 , B23K20/129 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/14 , B23K2203/18 , B23K2203/26
摘要： A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target (100) to a high strength backing plate (110) and further creating a vacuum seal between the target and the backing plate using friction stir welding processes.
摘要翻译：一种制造结合到背板的溅射靶组件的方法。该方法包括将目标物（100）粘合到高强度背板（110）上，并使用摩擦搅拌焊接工艺进一步在靶材和背板之间产生真空密封。

3. 发明申请

WO2006041989A3 SPUTTERING TARGET AND METHOD OF ITS FABRICATION 审中-公开
标题翻译：溅射目标及其制造方法
公开(公告)号：WO2006041989A3
公开(公告)日：2006-08-03
申请号：PCT/US2005035940
申请日：2005-10-04
申请人： TOSOH SMD INC , TOSOH CORP , INASE TOSHIO , YATSUMANI SHUNSUKE , IVANOV EUGENE Y , JORDAN RONALD G
发明人： INASE TOSHIO , YATSUMANI SHUNSUKE , IVANOV EUGENE Y , JORDAN RONALD G
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： Disclosed is a sputtering target that may be used to provide an electrode for FPD devices. The electrode for semiconductor devices is made of an aluminum-based alloy containing one or more alloying elements selected from rare earth alloying elements present in a total amount from 0.01 to 3 at %. The method of fabricating a target includes the steps of continuous casting with electromagnetic stirring, in which the elements mentioned above are dissolved in an A1 matrix, and precipitating part or all of the elements dissolved in the A1 matrix as intermetallic compounds during solidification. The target is made of an aluminum-based alloy containing the above elements by thermo mechanical fabrication, rolling or extrusion process.
摘要翻译：公开了可用于提供FPD装置的电极的溅射靶。用于半导体器件的电极由含有一种或多种合金元素的铝基合金制成，所述合金元素选自总量为0.01至3原子％的稀土合金元素。制造靶的方法包括以下步骤：电磁搅拌连续铸造，其中上述元素溶解在Al基体中，并且在固化期间将溶解在Al基体中的部分或全部元素沉淀为金属间化合物。目标是通过热机械制造，轧制或挤压工艺由含有上述元素的铝基合金制成。

4. 发明申请

WO2004024972A3 SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY 审中-公开
公开(公告)号：WO2004024972A3
公开(公告)日：2004-03-25
申请号：PCT/US2003/026465
申请日：2003-08-26
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： C23C14/34
摘要： A target (1) and backing plate (10) assembly and method of making the same. The target (1) and backing plate (10) assembly provides a mechanical interlock between the target (1) and backing plate (10) in addition to diffusion bonding between dissimilar materials comprising the target (1) and backing plate (10). An interlayer may also be used between the target (1) and backing plate (10). A plurality of ridges, or other salient surface features (3,4) on one of the target (1) and backing plate (10) are joined to corresponding members or channels (13, 14) on the other of the target and backing plate. The dissimilar materials of the target (1) and backing plate (10) fill negative angled cavities(13, 14) formed by the plurality of ridges (3, 4) and corresponding channels or members (13, 14) of the target (1) and backing plate (10) to accommodate the diffusion bonded dissimilar materials. A target (1) and backing plate (10) assembly with increased strength results.

5. 发明申请

WO2003106733A1 TARGET AND METHOD OF DIFFUSION BONDING TARGET TO BACKING PLATE 审中-公开
标题翻译：扩散接头目标和方法对背板的影响
公开(公告)号：WO2003106733A1
公开(公告)日：2003-12-24
申请号：PCT/US2003/018440
申请日：2003-06-11
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , CONARD, Harry, W.
发明人： IVANOV, Eugene, Y. , CONARD, Harry, W.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , B23K20/021 , C23C14/3407 , C23C14/3414
摘要： Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) between the target and backing plate (18) in order to achieve intermetallic diffusion bonds between adjacent layers during a single HIP process. A mechanical interlock between the target (12) and backing plate is also achieved preferably during a single HIP process. In another instance, the target and backing plate are welded directly together by electron beam welding, and the interlayer and HIP process are omitted. In either case, the process for making the sputter target assembly is shortened, rendering it less expensive and subject to less failures, while achieving assemblies having robust strength.
摘要翻译：溅射靶组件（10）和制造其中常规使用的HIP工艺的溅射靶组件的方法被最小化或消除，同时在较短时间内产生更高产量的溅射靶组件。在一个实例中，溅射靶组件包括在靶材和背板（18）之间的单层或多层分层的中间层（14,16），以便在单个HIP工艺期间实现相邻层之间的金属间扩散接合。目标（12）和背板之间的机械互锁优选地也是在单个HIP过程期间实现的。在另一种情况下，目标板和背板通过电子束焊接直接焊接在一起，并且省略了中间层和HIP工艺。在任一种情况下，制造溅射靶组件的工艺被缩短，使得它更便宜并且经受更少的故障，同时实现具有强大强度的组件。

6. 发明申请

WO2008030368A1 COPPER SPUTTERING TARGET WITH FINE GRAIN SIZE AND HIGH ELECTROMIGRATION RESISTANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有细粒度和高电阻率的铜喷溅目标及其制造方法
公开(公告)号：WO2008030368A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/018977
申请日：2007-08-29
申请人： TOSOH SMD, INC. , YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
发明人： YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
IPC分类号： C22C9/00 , C23C14/34
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt% ~ 10 wt% alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt% aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译：本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。含有12ppm银的示例性铜溅射具有超细晶粒尺寸。本发明还提供了制造铜溅射靶的方法。

7. 发明申请

WO2006093953A1 SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET 审中-公开
标题翻译：具有绝缘环的喷射目标和环与目标之间的差距
公开(公告)号：WO2006093953A1
公开(公告)日：2006-09-08
申请号：PCT/US2006/007062
申请日：2006-02-28
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： H01J37/34 , H01J37/3414
摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.
摘要翻译：用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。至少一个间隔件位于靶和绝缘环之间，以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。

8. 发明申请

WO2006001976A2 HIGH PURITY TARGET MANUFACTURING METHODS 审中-公开
标题翻译：高纯度目标制造方法
公开(公告)号：WO2006001976A2
公开(公告)日：2006-01-05
申请号：PCT/US2005/019195
申请日：2005-06-01
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： B22F3/12
CPC分类号： C22C1/045 , B22F3/14 , B22F2998/00 , B22F2998/10 , C22C1/0458 , C23C14/3414 , B22F3/02 , B22F3/10 , B22F3/12 , B22F3/15 , B22F3/18
摘要： A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.
摘要翻译：一种制造高纯度钨溅射靶的方法。该方法包括对高纯度钨粉的热处理，以便将其固化成具有提供闭孔率的密度的坯料。合并可以通过热压，HIP或任何其他适当的方法来实现。接下来，将该板轧制以产生大小尺寸的目标坯料并进一步增加材料的密度。该方法可适用于各种坯料，包括圆形靶材坯料，例如钨，钼，钽，铪等。

9. 发明申请

WO2005058543A1 METHOD OF ELECTROCHEMICAL CHEMICAL MECHANICAL PLANARIZATION PROCESS 审中-公开
标题翻译：电化学机械平面化方法
公开(公告)号：WO2005058543A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/041393
申请日：2004-12-09
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , MASLYI, A., I. , ZELINSKY, A.
发明人： IVANOV, Eugene, Y. , MASLYI, A., I. , ZELINSKY, A.
IPC分类号： B24B1/00
CPC分类号： B24B37/245 , B23H5/08 , C09G1/02 , C09K3/1463
摘要： The present invention relates to procedures and compositions for CMP materials used to planarize metals, such as Cu and Al, used in fabricating semiconductor devices. Optimization of the CMP process can be achieved by decreasing the role of mechanical abrasion in the CMP and increasing the role of chemical polishing, which can also improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, or pad which contains components that interact chemically or electrochemically with the surface to be polished. This slurry or a pad may contain reactive abrasive particles, which replace the hard inert abrasive particles of conventional slurries. Use of reactive abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry or a pad in CMP can reduce surface scratches and device damage.
摘要翻译：本发明涉及用于平面化用于制造半导体器件的金属（例如Cu和Al）的CMP材料的方法和组合物。可以通过减少CMP中机械磨损的作用并增加化学抛光的作用来实现CMP工艺的优化，这也可以提高材料去除率。增加化学抛光的作用可以通过产生抛光浆料或垫来实现，该抛光浆料或垫包含与待抛光表面化学或电化学相互作用的成分。这种浆料或垫可以包含反应性磨料颗粒，其代替常规浆料的硬惰性磨料颗粒。使用反应性磨料颗粒可以减少CMP工艺中机械磨损的作用。在CMP中使用这种浆料或垫可以减少表面划痕和器件损坏。

10. 发明申请

WO2004099458A3 METHODS FOR MAKING LOW SILICON CONTENT Ni-Si SPUTTERING TARGETS AND TARGETS MADE THEREBY 审中-公开
公开(公告)号：WO2004099458A3
公开(公告)日：2004-11-18
申请号：PCT/US2004/013168
申请日：2004-04-29
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： C22C19/03
摘要： A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an alloy containing trace amounts, up to less than 4.39 wt% silicon, and preferably 2.0 wt% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in conventional magnetron sputter processes, such that a target can be positioned near a cathode in the presence of an electric potential difference and a magnetic field in order to induce sputtering of nickel ions from the sputter target onto the substrate.

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