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1. 发明申请

WO2017058332A2 FABRICATION OF REINFORCED SUPERCONDUCTING WIRES 审中-公开
标题翻译：加强超导线的制造
公开(公告)号：WO2017058332A2
公开(公告)日：2017-04-06
申请号：PCT/US2016/041556
申请日：2016-07-08
申请人： H.C. STARCK INC. , SMATHERS, David, B.
发明人： SMATHERS, David, B. , AIMONE, Paul , DARY, Francois, Charles
IPC分类号： G02B6/44 , G02B6/38
CPC分类号： H01B12/10 , B21C3/04 , C22C27/02 , C22F1/18 , H01B1/026 , H01B13/0036 , H01L39/14 , H01L39/2406
摘要： In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.
摘要翻译：在各种实施例中，超导线具有包覆复合长丝的组合和/或嵌入线基体内的稳定的复合长丝。电线可以包括用于改善机械性能的一个或多个稳定元件。

2. 发明申请

WO2008030368A1 COPPER SPUTTERING TARGET WITH FINE GRAIN SIZE AND HIGH ELECTROMIGRATION RESISTANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有细粒度和高电阻率的铜喷溅目标及其制造方法
公开(公告)号：WO2008030368A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/018977
申请日：2007-08-29
申请人： TOSOH SMD, INC. , YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
发明人： YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
IPC分类号： C22C9/00 , C23C14/34
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt% ~ 10 wt% alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt% aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译：本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。含有12ppm银的示例性铜溅射具有超细晶粒尺寸。本发明还提供了制造铜溅射靶的方法。

3. 发明申请

WO2012112376A1 DIFFUSION-BONDED SPUTTERING TARGET ASSEMBLY AND METHOD OF MANUFACTURING 审中-公开
标题翻译：扩散接头飞溅靶组件及其制造方法
公开(公告)号：WO2012112376A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/024469
申请日：2012-02-09
申请人： TOSOH SMD, INC. , MIAO, Weifang , SMATHERS, David B. , IVANOV, Eugene Y. , THEADO, Erich , BAILEY, Robert S. , HART, Jeff
发明人： MIAO, Weifang , SMATHERS, David B. , IVANOV, Eugene Y. , THEADO, Erich , BAILEY, Robert S. , HART, Jeff
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3435
摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
摘要翻译：提供制造扩散接合溅射靶组件的方法。包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。第二个金属或合金被放置在靶坯周围。靠近位于第二目标表面旁边的第二金属或合金提供背板。然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和背衬板之间的Al中间层。该组件的粘合强度超过50MPa。

4. 发明申请

WO2003100114A1 REPLACEABLE TARGET SIDEWALL INSERT WITH TEXTURING 审中-公开
标题翻译：可替换的目标SIDEWALL插入纹理
公开(公告)号：WO2003100114A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/009369
申请日：2003-03-26
申请人： TOSOH SMD,INC. , SMATHERS, David, B.
发明人： SMATHERS, David, B.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： This invention provides a sputter target (30) and backing plate (60) assembly having a replaceable sputter target sidewall insert (10). The replaceable sidewall insert (10) enhances the effectiveness and useful life of the assembly by replacing only the insert portion of the sidewall (10) when needed, while retaining the remaining portions of the target (30) for additional use. The sidewall insert (10) is secured to the target (30) and backing plate (60) in corresponding grooves (66) provided in the target (30) and backing plate (60). A textured surface (16) such as a continuous textured coating may be applied to the sidewall insert (10) to further enhance particle retention properties of the target/backing plate assembly.
摘要翻译：本发明提供一种具有可替换的溅射靶侧壁插入件（10）的溅射靶（30）和背板（60）组件。可替换的侧壁插入件（10）通过在需要时仅替换侧壁（10）的插入部分同时保持目标（30）的剩余部分用于额外使用而增强了组件的有效性和使用寿命。侧壁插入件（10）在设置在靶（30）和背板（60）中的相应凹槽（66）中固定到靶（30）和背板（60）。诸如连续织构化涂层的纹理表面（16）可以施加到侧壁插入件（10），以进一步增强靶/背板组件的颗粒保持性能。

5. 发明申请

WO2002086186A1 TARGET AND METHOD OF OPTIMIZING TARGET PROFILE 审中-公开
标题翻译：目标和优化目标轮廓的方法
公开(公告)号：WO2002086186A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/004819
申请日：2002-02-20
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , SMATHERS, David, B. , WICKERSHAM, Charles, E., Jr. , ZHU, Lin
发明人： IVANOV, Eugene, Y. , SMATHERS, David, B. , WICKERSHAM, Charles, E., Jr. , ZHU, Lin
IPC分类号： C23C14/35
CPC分类号： H01J37/3482 , C23C14/3407 , C23C14/35
摘要： A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.
摘要翻译：公开了一种通过该方法制造增加寿命的溅射靶和靶的方法。该方法包括从前体靶设计或轮廓开始，并沿着相同的表面的径向表面和在表面上方的多个垂直尺寸进行磁场强度测量。在目标的侵蚀轨迹之间提供最佳磁场强度比。确定要添加到一个侵蚀轨迹中的材料的垂直尺寸，然后通过利用该最佳磁场强度比来计算另一个侵蚀轨迹的高度。

6. 发明申请

WO2010051040A1 METHOD OF MAKING A SPUTTER TARGET AND SPUTTER TARGETS MADE THEREBY 审中-公开
标题翻译：制造飞溅靶和溅射靶的方法
公开(公告)号：WO2010051040A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/005945
申请日：2009-11-03
申请人： TOSOH SMD, INC. , HOLCOMB, M., Kirk , SMATHERS, David, B.
发明人： HOLCOMB, M., Kirk , SMATHERS, David, B.
IPC分类号： C23C14/34 , C22C27/02 , C22F1/18 , B21B1/02
CPC分类号： C23C14/3414 , C22C27/02 , C22F1/16 , C22F1/18
摘要： A method of making sputter targets from a BCC metal or BCC metal alloy is provided. The ingot is e-beamed melted and subjected to vacuum arc reduction. The ingot is then tri-axially forged, keeping the centerline of the ingot in the center of the ingot during the tri-axial forging step. The ingot is then vacuum annealed and clock rolled. During the clock rolling, the center line of the ingot is maintained in the center of the ingot and perpendicular to the compressive forces used during the clock rolling. The clock rolled ingot is then vacuum annealed and provided in a near net shape for usage as a sputter target. Tantalum target materials are disclosed having a purity of at least 99.5% and an interstitial content (CONH) of less than about 25 ppm. Tantalum targets, in accordance with the invention, have a grain size of about 50 to 100 microns and a mixed {100}/{111} texture with a higher % {111} gradient towards the center.
摘要翻译：提供了从BCC金属或BCC金属合金制造溅射靶的方法。将该锭电子束熔化并进行真空电弧还原。然后将铸锭三轴锻造，在三轴锻造步骤期间将锭的中心线保持在锭的中心。然后将该锭进行真空退火并进行时钟轧制。在时钟滚动期间，锭的中心线保持在锭的中心并垂直于在时钟轧制期间使用的压缩力。然后将时钟轧制锭真空退火并提供为近净形状以用作溅射靶。公开了钽靶材料，其纯度至少为99.5％，间隙含量（CONH）小于约25ppm。根据本发明的钽靶具有约50至100微米的晶粒尺寸和朝向中心具有较高％{111}梯度的混合{100} / {111}纹理。

7. 发明申请

WO2004024452A3 PROCESS FOR MAKING DENSE MIXED METAL Si3N4 TARGETS 审中-公开
标题翻译：制造DENSE MIXED金属Si3N4目标的工艺
公开(公告)号：WO2004024452A3
公开(公告)日：2005-06-09
申请号：PCT/US0327145
申请日：2003-08-27
申请人： TOSOH SMD INC , SMATHERS DAVID B , VALENT FRANCIS S , REGAN MICHAEL J , HEWLETT PACKARD CO
发明人： SMATHERS DAVID B , VALENT FRANCIS S , REGAN MICHAEL J
IPC分类号： B32B9/00 , B32B15/04 , B41J20060101 , C04B35/64 , C23C14/34
CPC分类号： C23C14/3414 , B22F2998/10 , B22F2999/00 , C22C29/16 , C22C32/0047 , C22C32/0068 , B22F1/0003 , B22F3/15 , B22F3/14 , B22F2201/10
摘要： A composition and method for fabricating high-density Ta-Al-O, Ta-Si-N, and W-Si-N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.
摘要翻译：用于制造高密度Ta-Al-O，Ta-Si-N和W-Si-N溅射靶的组合物和方法，对于用于喷墨打印机的加热器层的溅射特别有用。根据本发明的组合物包括金属组分Si 3 N 4和烧结助剂，使得靶材将成功地溅射而不会破裂等。组分以粉末形式组合并在加热条件下加压固化足以形成固结的时间混合物具有大于理论密度的约95％的实际密度。然后可以加工固结的混合物以提供最终期望的目标形状。

8. 发明申请

WO2004024978A1 NON-PLANAR SPUTTER TARGETS HAVING CRYSTALLOGRAPHIC ORIENTATIONS PROMOTING UNIFORM DEPOSITION 审中-公开
标题翻译：具有促进均匀沉积的晶体学方向的非平面溅射靶
公开(公告)号：WO2004024978A1
公开(公告)日：2004-03-25
申请号：PCT/US2003/028418
申请日：2003-09-12
申请人： TOSOH SMD, INC. , BAILEY, Robert, S. , HOLCOMB, Melvin, K. , SMATHERS, David, B. , WIEMELS, Timothy
发明人： BAILEY, Robert, S. , HOLCOMB, Melvin, K. , SMATHERS, David, B. , WIEMELS, Timothy
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3414 , H01J37/34 , H01J37/3426 , Y10T29/49805
摘要： A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface (25) that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome (22) end of the sputter target (20) is comprised of a first crystallographic orientation and sidewalls (24) of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (α, β1, β2) in the target.
摘要翻译：公开了一种在溅射靶表面（25）的部分中具有不同晶体取向的非平面溅射靶，其促进从靶表面溅射到衬底上的更理想的沉积和密度图案。溅射靶（20）的封闭圆顶（22）端部由第一结晶取向组成，溅射靶的侧壁（24）由不同于圆顶的晶体取向构成。优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。液压成形操作导致不同的晶体取向，同时最小化或理想地省略了热的应用。因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。目标中有载体（alpha，beta1，beta2）。

9. 发明申请

WO2010042227A1 CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING 审中-公开
标题翻译：圆锥滚子压力机构及喷射目标制造方法
公开(公告)号：WO2010042227A1
公开(公告)日：2010-04-15
申请号：PCT/US2009/005572
申请日：2009-10-09
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
IPC分类号： C23C14/34 , B21D17/02 , B21D13/02 , B21D22/02
CPC分类号： B21D17/02 , B21D13/02 , B21D22/02 , C23C14/3407
摘要： A method of making metal target blank (1) using circular groove pressing includes pressing a metal or metal alloy target blank (1) in a first circular grooved pressing die set (20A, 20B) into a first concentric corrugated shape while maintaining an original diameter of the target blank (1) to create concentric rings of shear deformation in the target blank (1). Forces are then applied to the concentric corrugated target (1) blank sufficient to substantially flatten the target blank with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank (1) to a substantially flat condition. The target blank (1) is pressed in a second circular grooved die set (40A, 40B) into a second concentric corrugated shape while maintaining the original diameter of the target blank (1), wherein the second die set (40A, 40B) has a groove pattern offset from a groove pattern of the first die set (20A, 20B) so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank (1) sufficient to substantially flatten the target blank (1) with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank to a substantially flat condition.
摘要翻译：使用圆形沟槽压制制造金属靶坯料（1）的方法包括将第一圆形槽压模组（20A，20B）中的金属或金属合金靶坯（1）压制成第一同心波纹形状，同时保持原始直径的目标坯料（1）以在目标坯料（1）中产生剪切变形的同心环。然后将力施加到同心的波纹状目标（1）坯料上，足以在保持目标坯料（1）的原始直径以恢复目标坯料（1）的情况下用平坦的模具组件（30A，30B）基本上平坦化目标坯料，达到基本平坦的状态。目标坯料（1）在第二圆形槽模具组件（40A，40B）中被压制成第二同心波纹形状，同时保持目标坯件（1）的原始直径，其中第二模具组件（40A，40B）具有凹槽图案从第一模具组（20A，20B）的凹槽图案偏移，以在目标坯料的未被变形的区域中产生剪切变形的同心环。力再次施加到同心的波纹状目标坯料（1）上，足以基本上用平模（30A，30B）平坦化目标坯料（1），同时保持目标坯料（1）的原始直径以恢复目标坯料达到基本平坦的状态。

10. 发明申请

WO2008127493A1 ULTRA SMOOTH FACE SPUTTER TARGETS AND METHODS OF PRODUCING SAME 审中-公开
标题翻译：超声波平面飞秒瞄准镜及其生产方法
公开(公告)号：WO2008127493A1
公开(公告)日：2008-10-23
申请号：PCT/US2008/001145
申请日：2008-01-29
申请人： TOSOH SMD, INC. , BANKS, Terry, L. , SMATHERS, David, B.
发明人： BANKS, Terry, L. , SMATHERS, David, B.
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： A method is provided to remove a thickness of a sputter target surface deformation layer to thereby achieve a reduced burn-in time during sputtering operations. The method comprises extrusion hone polishing of the target surface with a visco-elastic abrasive medium.
摘要翻译：提供了一种去除溅射靶表面变形层的厚度从而在溅射操作期间实现减少的老化时间的方法。该方法包括用粘弹性研磨介质对目标表面进行抛光抛光。

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