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1. 发明申请

WO2007148259A3 METHOD OF COLLECTING DATA 审中-公开
标题翻译：收集数据的方法
公开(公告)号：WO2007148259A3
公开(公告)日：2008-06-19
申请号：PCT/IB2007052221
申请日：2007-06-12
申请人： KONINKL PHILIPS ELECTRONICS NV , IVANOV EUGENE , HEERINK ALEXANDER WILHELMUS
发明人： IVANOV EUGENE , HEERINK ALEXANDER WILHELMUS
IPC分类号： G06F19/00
CPC分类号： G06F19/3418 , G16H40/63
摘要： Data storage method for storing a subblock of a block of data. The block of data is distributed, in a number of subblocks of data, over a set of devices. The set of devices comprises at least two devices, and the method comprises the steps of : collecting a subblock of data using the device, storing the subblock of data on the device; and storing metadata identifying the data comprised in the subblock of data.
摘要翻译：用于存储数据块的子块的数据存储方法。在一组设备中，数据块在数据的多个子块中分布。所述设备集合包括至少两个设备，并且所述方法包括以下步骤：使用所述设备收集数据子块，将所述数据子块存储在所述设备上; 以及存储标识包含在数据子块中的数据的元数据。

2. 发明申请

WO2008030368A1 COPPER SPUTTERING TARGET WITH FINE GRAIN SIZE AND HIGH ELECTROMIGRATION RESISTANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有细粒度和高电阻率的铜喷溅目标及其制造方法
公开(公告)号：WO2008030368A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/018977
申请日：2007-08-29
申请人： TOSOH SMD, INC. , YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
发明人： YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
IPC分类号： C22C9/00 , C23C14/34
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt% ~ 10 wt% alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt% aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译：本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。含有12ppm银的示例性铜溅射具有超细晶粒尺寸。本发明还提供了制造铜溅射靶的方法。

3. 发明申请

WO2007148255A2 METHOD OF TRANSFERRING DATA 审中-公开
标题翻译：传输数据的方法
公开(公告)号：WO2007148255A2
公开(公告)日：2007-12-27
申请号：PCT/IB2007/052195
申请日：2007-06-11
申请人： KONINKLIJKE PHILIPS ELECTRONICS N. V. , IVANOV, Eugene , HERRINK, Alexander, Wilhelmus
发明人： IVANOV, Eugene , HERRINK, Alexander, Wilhelmus
IPC分类号： G06F19/00
CPC分类号： G06F19/3418 , G06F19/00
摘要： In a telemonitoring system, a number of telemonitoring devices collect patient data. If an abnormality occurs, a monitoring center is sent a signal. Depending on the abnormality, the monitoring center may request more patient data in order to analyze and evaluate the occurred abnormality. To this end, the patient may be requested to send the telemonitoring devices to the monitoring center. In order to minimize overhead costs and increase efficiency, the present invention provides a method and system for transferring the requested data to a minimum number of selected devices, preferably one selected device, so that a minimum number of selected devices needs to be sent to the monitoring center.
摘要翻译：在远程监控系统中，一些远程监控设备收集患者数据。如果出现异常，监控中心发出信号。根据异常情况，监控中心可能会要求更多的患者资料，以分析和评估发生的异常情况。为此，请求患者将监控设备发送到监控中心。为了最小化开销成本并提高效率，本发明提供了一种方法和系统，用于将所请求的数据传送到最少数量的所选择的设备，优选地一个选定的设备，使得最少数量的所选择的设备需要被发送到监控中心。

4. 发明申请

WO2006093953A1 SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET 审中-公开
标题翻译：具有绝缘环的喷射目标和环与目标之间的差距
公开(公告)号：WO2006093953A1
公开(公告)日：2006-09-08
申请号：PCT/US2006/007062
申请日：2006-02-28
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： H01J37/34 , H01J37/3414
摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.
摘要翻译：用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。至少一个间隔件位于靶和绝缘环之间，以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。

5. 发明申请

WO2006001976A2 HIGH PURITY TARGET MANUFACTURING METHODS 审中-公开
标题翻译：高纯度目标制造方法
公开(公告)号：WO2006001976A2
公开(公告)日：2006-01-05
申请号：PCT/US2005/019195
申请日：2005-06-01
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： B22F3/12
CPC分类号： C22C1/045 , B22F3/14 , B22F2998/00 , B22F2998/10 , C22C1/0458 , C23C14/3414 , B22F3/02 , B22F3/10 , B22F3/12 , B22F3/15 , B22F3/18
摘要： A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.
摘要翻译：一种制造高纯度钨溅射靶的方法。该方法包括对高纯度钨粉的热处理，以便将其固化成具有提供闭孔率的密度的坯料。合并可以通过热压，HIP或任何其他适当的方法来实现。接下来，将该板轧制以产生大小尺寸的目标坯料并进一步增加材料的密度。该方法可适用于各种坯料，包括圆形靶材坯料，例如钨，钼，钽，铪等。

6. 发明申请

WO2005092196A1 X-RAY EXAMINATION APPARATUS AND METHOD 审中-公开
标题翻译： X射线检查装置和方法
公开(公告)号：WO2005092196A1
公开(公告)日：2005-10-06
申请号：PCT/IB2005/050876
申请日：2005-03-11
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NIESSEN, Wiro, J. , VAN DE KRAATS, Everine, B. , VAN WALSUM, Theo , ROMMES, Eelco, L. , IVANOV, Eugene , AMERICA, Petrus, H., M.
发明人： NIESSEN, Wiro, J. , VAN DE KRAATS, Everine, B. , VAN WALSUM, Theo , ROMMES, Eelco, L. , IVANOV, Eugene , AMERICA, Petrus, H., M.
IPC分类号： A61B6/08
CPC分类号： A61B6/08 , A61B6/547
摘要： The present invention relates to an X-ray examination apparatus and a corresponding method for acquiring X-ray image data of a region of interest by use of an imaging unit (1-3) comprising an X-ray source (2) for emitting X-ray radiation and an X-ray detector (3) for detecting X-ray radiation after penetration of said region of interest. In order to provide a quick and easy method which also reduces the X-ray dose to which a patient is exposed and which allows immediate acquisition of X-ray image data from a desired and possibly optimal position, it is proposed that the X-ray examination apparatus according to the invention comprises further: processing means (22) for determining a desired position of said imaging unit (1-3), at which X-ray image data shall be acquired, based on a predetermined image acquisition plan (P) and/or an actual position (D) of an instrument (11), control means (23) for determining position parameters of said imaging unit (1-3) for said desired position, and positioning means (30) for positioning said imaging unit (1-3) at said desired position by use of said position parameters.
摘要翻译：本发明涉及一种X射线检查装置和相应的方法，用于通过使用包括用于发射X的X射线源（2）的成像单元（1-3）来获取感兴趣区域的X射线图像数据射线辐射和用于在所述感兴趣区域穿透之后检测X射线辐射的X射线检测器（3）。为了提供一种快速简单的方法，其也降低了患者暴露的X射线剂量，并且允许从期望的和可能的最佳位置立即获取X射线图像数据，因此提出X射线根据本发明的检查装置还包括：处理装置（22），用于基于预定的图像获取计划（P）确定将获取X射线图像数据的所述成像单元（1-3）的期望位置，和/或仪器（11）的实际位置（D），用于确定用于所述期望位置的所述成像单元（1-3）的位置参数的控制装置（23）以及用于定位所述成像单元（1-3）通过使用所述位置参数在所述期望位置。

7. 发明申请

WO2005058543A1 METHOD OF ELECTROCHEMICAL CHEMICAL MECHANICAL PLANARIZATION PROCESS 审中-公开
标题翻译：电化学机械平面化方法
公开(公告)号：WO2005058543A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/041393
申请日：2004-12-09
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , MASLYI, A., I. , ZELINSKY, A.
发明人： IVANOV, Eugene, Y. , MASLYI, A., I. , ZELINSKY, A.
IPC分类号： B24B1/00
CPC分类号： B24B37/245 , B23H5/08 , C09G1/02 , C09K3/1463
摘要： The present invention relates to procedures and compositions for CMP materials used to planarize metals, such as Cu and Al, used in fabricating semiconductor devices. Optimization of the CMP process can be achieved by decreasing the role of mechanical abrasion in the CMP and increasing the role of chemical polishing, which can also improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, or pad which contains components that interact chemically or electrochemically with the surface to be polished. This slurry or a pad may contain reactive abrasive particles, which replace the hard inert abrasive particles of conventional slurries. Use of reactive abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry or a pad in CMP can reduce surface scratches and device damage.
摘要翻译：本发明涉及用于平面化用于制造半导体器件的金属（例如Cu和Al）的CMP材料的方法和组合物。可以通过减少CMP中机械磨损的作用并增加化学抛光的作用来实现CMP工艺的优化，这也可以提高材料去除率。增加化学抛光的作用可以通过产生抛光浆料或垫来实现，该抛光浆料或垫包含与待抛光表面化学或电化学相互作用的成分。这种浆料或垫可以包含反应性磨料颗粒，其代替常规浆料的硬惰性磨料颗粒。使用反应性磨料颗粒可以减少CMP工艺中机械磨损的作用。在CMP中使用这种浆料或垫可以减少表面划痕和器件损坏。

8. 发明申请

WO2004099458A3 METHODS FOR MAKING LOW SILICON CONTENT Ni-Si SPUTTERING TARGETS AND TARGETS MADE THEREBY 审中-公开
公开(公告)号：WO2004099458A3
公开(公告)日：2004-11-18
申请号：PCT/US2004/013168
申请日：2004-04-29
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： C22C19/03
摘要： A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an alloy containing trace amounts, up to less than 4.39 wt% silicon, and preferably 2.0 wt% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in conventional magnetron sputter processes, such that a target can be positioned near a cathode in the presence of an electric potential difference and a magnetic field in order to induce sputtering of nickel ions from the sputter target onto the substrate.

9. 发明申请

WO2004065046A2 BRITTLE MATERIAL SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SAME 审中-公开
标题翻译： BRITTLE材料溅射靶组件及其制造方法
公开(公告)号：WO2004065046A2
公开(公告)日：2004-08-05
申请号：PCT/US2004/001441
申请日：2004-01-21
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： B23D
CPC分类号： C23C26/02 , B23K1/0008 , B23K35/26 , C23C26/00
摘要： A method for producing a sputtering target assembly made from a material with a low coefficient of thermal expansion solder bonded to a backing plate with a coefficient of thermal expansion similar to that of the target assembly material. The method includes heat treating the target assembly material and backing plate, solder bonding the target assembly material and backing plate, and slowly cooling the assembly to room temperature. Matching the coefficients of thermal expansion of the target assembly material and backing plate minimizes distortion in the assembly caused from deflection and internal stress.
摘要翻译：一种制造溅射靶组件的方法，该溅射靶组件由具有低热膨胀系数的材料焊接到背板上，具有类似于目标组装材料的热膨胀系数制成。该方法包括热处理目标组装材料和背板，焊接目标组件材料和背板，并将组件缓慢冷却至室温。匹配目标组装材料和背板的热膨胀系数可以最大限度地减少由偏转和内部应力引起的组件变形。

10. 发明申请

WO1993024970A1 MICROWAVE RESONATOR 审中-公开
标题翻译：微波谐振器
公开(公告)号：WO1993024970A1
公开(公告)日：1993-12-09
申请号：PCT/AU1993000256
申请日：1993-06-01
申请人： POSEIDON SCIENTIFIC INSTRUMENTS PTY. LTD. , THE UNIVERSITY OF WESTERN AUSTRALIA , IVANOV, Eugene, Nikolay , BLAIR, David, Gerald , TOBAR, Michael, Edmund , SEARLS, Jesse, Huyck , EDWARDS, Simon, John
发明人： POSEIDON SCIENTIFIC INSTRUMENTS PTY. LTD. , THE UNIVERSITY OF WESTERN AUSTRALIA
IPC分类号： H01P07/10
CPC分类号： H01P1/2084 , H01P7/10
摘要： A method of producing a microwave resonator comprising a cavity (50) defined, at least in part, by a generally cylindrical wall (64) having an electrically conductive inner surface and containing a generally cylindrical piece of low loss dielectric material (22), characterised by forming a generally cylindrical piece of low loss dielectric material of predetermined size and placing same in a cavity to produce a microwave resonator which operates in a particular mode at a specific frequency at a particular temperature. Microwave radiation corresponding to a further operating mode is then passed into the cavity and then the frequency corresponding to the further operating mode is searched for and measured. A further generally cylindrical piece of dielectric material is produced by scaling from the first piece of dielectric material according to the ratio between the first and second frequencies. Then, the diameter and/or height of the cavity is varied to compensate for manufacturing inaccuracies in the crystal so as to obtain an output frequency close to the desired output frequency.
摘要翻译：一种制造微波谐振器的方法，该微波谐振器包括至少部分地由具有导电内表面并且包含大致圆柱形的低损耗介电材料（22）的大致圆柱形壁（64）限定的空腔（50），其特征在于通过形成具有预定尺寸的大致圆柱形的低损耗介电材料，并将其放置在空腔中以产生在特定温度下以特定频率在特定模式下工作的微波谐振器。然后将对应于另一操作模式的微波辐射传入空腔中，然后搜索和测量与进一步操作模式对应的频率。通过根据第一和第二频率之间的比例从第一片电介质材料进行缩放来制造进一步大致圆柱形的电介质材料片。然后，改变空腔的直径和/或高度以补偿晶体中的制造不准确度，以获得接近期望输出频率的输出频率。

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