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    • 2. 发明申请
    • PHASE TRANSITION MEMORIES AND TRANSISTORS
    • 相转移记忆和晶体管
    • WO2010138876A3
    • 2011-02-17
    • PCT/US2010036667
    • 2010-05-28
    • UNIV CORNELLTIWARI SANDIPSUNDARARAMAN RAVISHANKARLEE SANG HYEONKIM MOONKYUNG
    • TIWARI SANDIPSUNDARARAMAN RAVISHANKARLEE SANG HYEONKIM MOONKYUNG
    • H01L21/8247H01L27/115
    • H01L29/685H01L29/51H01L29/513H01L29/517
    • In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.
    • 在一个实施例中,提出了一种方法,包括提供具有电极的半导体结构,其中所述提供包括提供相变材料区域,并且其中所述方法还包括赋予相变材料区域能量以引起相位的相变 过渡材料区域。 通过引起相变材料区域的相变,可以改变半导体结构的状态。 还提出了一种装置,其包括包括电极和相变材料区域的结构,其中该装置可操作以将能量传递给相变材料区域,以引起相变材料区域的相变而不发生相变 相变材料区域依赖于通过相变材料区域的电子传输。