专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08003431B2 Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same 有权
标题翻译：氧化锌膜的防反射处理方法及其制造方法
公开(公告)号：US08003431B2
公开(公告)日：2011-08-23
申请号：US12909144
申请日：2010-10-21
申请人： Sun Jin Yun , Jaemin Lee , Jun Kwan Kim , JungWook Lim
发明人： Sun Jin Yun , Jaemin Lee , Jun Kwan Kim , JungWook Lim
IPC分类号： H01L21/00
CPC分类号： G02B1/118 , G02B1/12 , H01L31/022483 , H01L31/0236 , H01L31/02366 , Y02E10/50
摘要： Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.
摘要翻译：提供一种氧化锌膜的防反射处理方法和使用该氧化锌膜的太阳能电池的制造方法。在防反射处理中，制备基板，然后在基板上形成多晶氧化锌膜。多晶氧化锌膜的表面被纹理化。这里，多晶氧化锌膜的表面的粗糙化包括使用与硝酸和过氧化氢混合的蚀刻溶液湿法蚀刻基板上的多晶氧化锌膜。

2. 发明申请

US20100213472A1 Photo-gating Switch System 审中-公开
标题翻译：光闸开关系统
公开(公告)号：US20100213472A1
公开(公告)日：2010-08-26
申请号：US12681615
申请日：2008-10-06
申请人： Sun-Jin Yun , Yong-Wook Lee , Hyn Tak Kim , Bong-Jun Kim , JungWook LIM , Sung-Youl Choi
发明人： Sun-Jin Yun , Yong-Wook Lee , Hyn Tak Kim , Bong-Jun Kim , JungWook LIM , Sung-Youl Choi
IPC分类号： H01L31/12
CPC分类号： H01L27/14603 , H01L27/1464 , H01L31/113
摘要： A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.
摘要翻译：提供了包括形成在基板上的感光装置的光门控开关系统。感光装置可以包括感光层和形成在感光层两端的电极。将光照射到感光装置的光源集成在基板的表面下方。

3. 发明申请

US20100059119A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100059119A1
公开(公告)日：2010-03-11
申请号：US12554099
申请日：2009-09-04
申请人： Sun Jin YUN , JungWook LIM , Sang Hoon KIM , Hyun Tak KIM
发明人： Sun Jin YUN , JungWook LIM , Sang Hoon KIM , Hyun Tak KIM
IPC分类号： H01L31/00 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L31/065 , H01L31/075 , H01L31/1812 , Y02E10/548
摘要： Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate; and a light-absorbing layer formed below the substrate and comprising a plurality of semiconductor layers which comprise Si or SiGe and have different Ge composition ratios. According to the present invention, stress and crystal defects that may occur by sudden changes of the composition of Ge can be minimized, and a more efficient solar cell can be fabricated.
摘要翻译：提供一种太阳能电池及其制造方法。太阳能电池包括基板; 以及形成在所述衬底下方并且包括多个包含Si或SiGe并且具有不同Ge组成比的半导体层的光吸收层。根据本发明，能够使Ge组成突然变化而产生的应力和晶体缺陷最小化，能够制造更高效的太阳能电池。

4. 发明申请

US20090208639A1 METHOD OF FORMING VANADIUM TRIOXIDE THIN FILM SHOWING ABRUPT METAL-INSULATOR TRANSITION 审中-公开
标题翻译：形成三氧化二铁薄膜显示金属绝缘体过渡的方法
公开(公告)号：US20090208639A1
公开(公告)日：2009-08-20
申请号：US12307573
申请日：2007-06-29
申请人： Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , JungWook Lim , Bong-Jun Kim
发明人： Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , JungWook Lim , Bong-Jun Kim
IPC分类号： B05D5/12
CPC分类号： C01G31/02 , C01P2006/40 , H01L49/003
摘要： Provided is a method of manufacturing a V2O3 thin film having an abrupt MIT characteristic. The method forms a thin film of one of VO2 and V3O7 on a substrate. Then the substrate on which thin film is formed is mounted in a chamber in which a reduction atmosphere capable of removing oxygen is formed, and annealed to form a V2O3 thin film having an abrupt MIT.
摘要翻译：提供了具有突变MIT特性的V2O3薄膜的制造方法。该方法在衬底上形成VO2和V3O7之一的薄膜。然后将形成有薄膜的基板安装在其中形成能够除去氧的还原气氛的室中，并退火以形成具有突变MIT的V 2 O 3薄膜。

5. 发明申请

US20130098432A1 SOLAR CELLS 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20130098432A1
公开(公告)日：2013-04-25
申请号：US13614077
申请日：2012-09-13
申请人： JungWook LIM , Sun Jin Yun
发明人： JungWook LIM , Sun Jin Yun
IPC分类号： H01L31/075
CPC分类号： H01L31/02168 , H01L31/03765 , H01L31/03921 , H01L31/0549 , H01L31/076 , Y02E10/52 , Y02E10/542 , Y02E10/548
摘要： Solar cells are provided. The solar cell may include a substrate, a first electrode on the substrate, a first light absorption layer disposed on the first electrode and including silicon containing oxygen, a second light absorption layer disposed on the first light absorption layer and including silicon containing germanium, and a second electrode on the second light absorption layer. The first light absorption layer may include a plurality of semiconductor layers which have oxygen-content ratios different from each other, respectively. The second light absorption layer may include a plurality of semiconductor layers which have germanium-content ratios different from each other, respectively.
摘要翻译：提供太阳能电池。太阳能电池可以包括基板，基板上的第一电极，设置在第一电极上并包含含硅的第一光吸收层，设置在第一光吸收层上并包括含锗的锗的第二光吸收层，以及在第二光吸收层上的第二电极。第一光吸收层可以包括分别具有彼此不同的氧含量比的多个半导体层。第二光吸收层可以包括分别具有彼此不同的锗含量比的多个半导体层。

6. 发明申请

US20100066411A1 LOGIC CIRCUIT USING METAL-INSULATOR TRANSITION (MIT) DEVICE 失效
标题翻译：使用金属绝缘子转换（MIT）器件的逻辑电路
公开(公告)号：US20100066411A1
公开(公告)日：2010-03-18
申请号：US12447922
申请日：2007-08-07
申请人： JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
发明人： JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
IPC分类号： H03K19/08 , H03K19/20
CPC分类号： H03K19/20
摘要： Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.
摘要翻译：提供了一种包括金属 - 绝缘体转变（MIT）器件的逻辑电路，包括：包括MIT薄膜的MIT器件单元，与MIT薄膜接触的电极薄膜以及经历不连续MIT的至少一个MIT器件，转换电压VT; 电源单元，包括向MIT设备施加电力的至少一个电源; 以及连接到MIT装置的至少一个电阻器，其中对通过电源的信号执行逻辑运算，以将逻辑运算的结果输出为输出信号。

7. 发明授权

US08305221B2 Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor 有权
标题翻译：使用突发MIT设备的可编程MIT传感器，以及包括MIT传感器的报警装置和二次电池防爆电路
公开(公告)号：US08305221B2
公开(公告)日：2012-11-06
申请号：US12303000
申请日：2007-05-30
申请人： Hyun-Tak Kim , Bong-Jun Kim , Byung-Gyu Chae , Sun-Jin Yun , Sung-Youl Choi , Yong-Wook Lee , JungWook Lim , Sang-Kuk Choi , Kwang-Yong Kang
发明人： Hyun-Tak Kim , Bong-Jun Kim , Byung-Gyu Chae , Sun-Jin Yun , Sung-Youl Choi , Yong-Wook Lee , JungWook Lim , Sang-Kuk Choi , Kwang-Yong Kang
IPC分类号： G08B17/00
CPC分类号： H01L49/003 , G01K3/005
摘要： Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.
摘要翻译：提供了具有可变MIT温度或电压的突发MIT装置，使用突发MIT装置的MIT传感器以及包括MIT传感器的报警装置和二次电池防爆电路。 MIT装置包括在转变温度或转变电压下经历突变MIT的突变MIT层和与突变MIT层接触的至少两个电极层。转变温度或转变电压随着包括施加在电极层上的电压，温度，电磁波，压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器，红外传感器，图像传感器，压力传感器，气体浓度传感器或开关。报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。二次电池防爆电路包括二次电池，MIT传感器附接到二次电池以感测二次电池的温度，从而防止二次电池的可能的爆炸，以及由二次电池供电的保护电路体。

8. 发明申请

US20120211069A1 THIN-FILM SOLAR CELLS AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20120211069A1
公开(公告)日：2012-08-23
申请号：US13402854
申请日：2012-02-22
申请人： Sun Jin YUN , JungWook Lim
发明人： Sun Jin YUN , JungWook Lim
IPC分类号： H01L31/0352 , H01L31/0687 , H01L31/0376
CPC分类号： H01L31/03921 , H01L31/065 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： Provided are thin-film solar cells and methods of fabricating the same. The solar cell may include a substrate and a cell comprising an amorphous layer with a continuously graded hydrogen content disposed on the substrate, a n-type semiconductor, an p-type semiconductor layer, a metal electrode adjacent to the n-type semiconductor and a transparent electrode adjacent to p-type semiconductor layers. The hydrogen content of the amorphous intrinsic semiconductor layer decreases in a continuous manner from a first interface, to which a light is incident, toward a second interface opposite to the first interface, and the first and second interfaces are two opposite surfaces of the amorphous intrinsic semiconductor layer being in contact with the p-type and n-type semiconductor layers, respectively.
摘要翻译：提供薄膜太阳能电池及其制造方法。太阳能电池可以包括基板和包括在基板上设置有连续梯度的氢含量的非晶层的单元，n型半导体，p型半导体层，与n型半导体相邻的金属电极和与p型半导体层相邻的透明电极。无定形本征半导体层的氢含量从光入射到的第一界面朝向与第一界面相反的第二界面以连续的方式减小，并且第一和第二界面是非晶固有的两个相对表面半导体层分别与p型和n型半导体层接触。

9. 发明授权

US08174188B2 Electro-luminescent device including metal-insulator transition layer 有权
标题翻译：电致发光器件包括金属 - 绝缘体过渡层
公开(公告)号：US08174188B2
公开(公告)日：2012-05-08
申请号：US12518107
申请日：2007-09-17
申请人： Sun-Jin Yun , JungWook Lim , Hyun-Tak Kim
发明人： Sun-Jin Yun , JungWook Lim , Hyun-Tak Kim
IPC分类号： H05B33/02
CPC分类号： H05B33/22
摘要： Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.
摘要翻译：提供了包括金属 - 绝缘体转变（MIT）层的电致发光器件（ELD）。 ELD包括：基材; 位于所述基板上并包含产生光的发光中心离子的EL荧光体层; 所述MIT层设置在所述EL荧光体层的表面上，并根据电压的变化从绝缘体突然变为金属; 粘附到MIT层以分布从外部源施加的电压的第一绝缘体; 以及设置在所述EL荧光体层的另一侧的第二绝缘体。

10. 发明授权

US07791376B2 Logic circuit using metal-insulator transition (MIT) device 失效
标题翻译：使用金属 - 绝缘体转换（MIT）器件的逻辑电路
公开(公告)号：US07791376B2
公开(公告)日：2010-09-07
申请号：US12447922
申请日：2007-08-07
申请人： JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
发明人： JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
IPC分类号： H03K19/20
CPC分类号： H03K19/20
摘要： Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.
摘要翻译：提供了一种包括金属 - 绝缘体转变（MIT）器件的逻辑电路，包括：包括MIT薄膜的MIT器件单元，与MIT薄膜接触的电极薄膜以及经历不连续MIT的至少一个MIT器件，转换电压VT; 电源单元，包括向MIT设备施加电力的至少一个电源; 以及连接到MIT装置的至少一个电阻器，其中对通过电源的信号执行逻辑运算，以将逻辑运算的结果输出为输出信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式