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1. 发明授权

US06774698B1 Voltage translator circuit for a mixed voltage circuit 失效
标题翻译：用于混合电压电路的电压转换器电路
公开(公告)号：US06774698B1
公开(公告)日：2004-08-10
申请号：US10354883
申请日：2003-01-30
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Christopher Kriz , Bernard Lee Morris , Stefan Allen Siegel
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Christopher Kriz , Bernard Lee Morris , Stefan Allen Siegel
IPC分类号： H03L500
CPC分类号： H03K3/356113 , H03K17/102
摘要： An apparatus is disclosed for translating a lower voltage signal, utilized in a low voltage integrated circuit, to a higher voltage signal suitable for use in a high voltage circuit. The apparatus includes a low voltage transistor assembly capable of operating in response to the lower voltage signal; a voltage regulator which is configured to limit an applied voltage across the low voltage transistor assembly; and a high voltage converter which is responsive to the operation of the low voltage transistor assembly to generate the higher voltage signal. The voltage regulator includes a reference voltage generator and a voltage limiter.
摘要翻译：公开了一种用于将低电压集成电路中使用的较低电压信号转换成适用于高压电路的较高电压信号的装置。该装置包括能够响应于较低电压信号而工作的低压晶体管组件; 配置为限制所述低压晶体管组件上的施加电压的电压调节器; 以及响应于低电压晶体管组件的操作以产生较高电压信号的高压转换器。电压调节器包括参考电压发生器和限压器。

2. 发明授权

US07218169B2 Reference compensation circuit 有权
标题翻译：参考补偿电路
公开(公告)号：US07218169B2
公开(公告)日：2007-05-15
申请号：US10744801
申请日：2003-12-23
申请人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Christopher Kriz , Bernard Lee Morris , Jeffrey Jay Nagy , Stefan Allen Siegel
发明人： Dipankar Bhattacharya , Makeshwar Kothandaraman , John Christopher Kriz , Bernard Lee Morris , Jeffrey Jay Nagy , Stefan Allen Siegel
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F3/245 , G05F3/247
摘要： A compensation circuit comprises a reference circuit including a reference NMOS device and a reference PMOS device. The reference circuit is operative to generate a first reference signal and a second reference signal, the first reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference NMOS device, and the second reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference PMOS device. The compensation circuit further comprises a control circuit connected to the reference circuit. The control circuit is operative to receive the first and second reference signals and to generate one or more output signals for compensating for a variation in at least one of a process characteristic, a voltage characteristic and a temperature characteristic of at least one NMOS device and at least one PMOS device in a circuit to be compensated, which is connectable to the control circuit, in response to the first and second reference signals, respectively.
摘要翻译：补偿电路包括参考电路，该参考电路包括参考NMOS器件和参考PMOS器件。参考电路可操作以产生第一参考信号和第二参考信号，第一参考信号是参考NMOS器件的处理特性，电压特性和温度特性中的至少一个的函数，第二参考信号信号是参考PMOS器件的工艺特性，电压特性和温度特性中的至少一个的函数。补偿电路还包括连接到参考电路的控制电路。控制电路可操作以接收第一和第二参考信号并产生一个或多个输出信号，用于补偿至少一个NMOS器件的工艺特性，电压特性和温度特性中的至少一个的变化，并且在响应于第一和第二参考信号，要补偿的电路中的至少一个PMOS器件可连接到控制电路。

3. 发明授权

US07034653B2 Semiconductor resistor 有权
标题翻译：半导体电阻
公开(公告)号：US07034653B2
公开(公告)日：2006-04-25
申请号：US10768771
申请日：2004-01-30
申请人： Dipankar Bhattacharya , John Christopher Kriz , Stefan Allen Siegel , Joseph E. Simko , Yehuda Smooha
发明人： Dipankar Bhattacharya , John Christopher Kriz , Stefan Allen Siegel , Joseph E. Simko , Yehuda Smooha
IPC分类号： H01C1/01
CPC分类号： H01L28/20 , H01C1/14 , H01L23/5228 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor resistor comprises a resistor body formed on a semiconductor substrate and first and second conductive terminals electrically connected to the resistor body at opposite ends thereof. The semiconductor resistor further includes at least first and second conductive paths between at least one of the first and second conductive terminals and the resistor body. The at least one conductive terminal is configured such that a resistance of the at least one conductive terminal between the at least first and second conductive paths is substantially matched to a resistance of the resistor body between the at least first and second conductive paths. In this manner, a current distribution between the at least first and second conductive paths is substantially matched.
摘要翻译：半导体电阻器包括形成在半导体衬底上的电阻体和在其两端电连接到电阻体的第一和第二导电端子。半导体电阻器还包括在第一和第二导电端子和电阻器主体中的至少一个之间的至少第一和第二导电路径。至少一个导电端子被配置为使得至少第一和第二导电路径之间的至少一个导电端子的电阻基本上与至少第一和第二导电路径之间的电阻体的电阻相匹配。以这种方式，至少第一和第二导电路径之间的电流分布基本匹配。

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